MRFE6VP61K25GSR5 [NXP]
RF Power LDMOS Transistors;
| 型号： | MRFE6VP61K25GSR5 |
| 厂家： | 
NXP |
| 描述： | RF Power LDMOS Transistors |
| 文件： | 总23页 (文件大小：972K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRFE6VP61K25H
Rev. 4.1, 3/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
MRFE6VP61K25HR6
MRFE6VP61K25HR5
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
1.8--600 MHz, 1250 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
P
(W)
f
G
(dB)
D
(%)
out
ps
Signal Type
(MHz)
Pulse
1250 Peak
230
24.0
74.0
(100 sec, 20% Duty Cycle)
CW
1250 CW
230
22.9
74.6
Application Circuits (1) — Typical Performance
Frequency
(MHz)
P
out
(W)
G
(dB)
ps
D
Signal Type
(%)
81
85
84
80
78
30
66
NI--1230H--4S
MRFE6VP61K25HR6/R5
27
40
CW
CW
1300
1300
1250
1100
1250
225
27
26
81.36
CW
27
87.5--108
144--148
170--230
352
CW
24
CW
26
DVB--T
25
NI--1230S--4S
Pulse
1250
21.5
MRFE6VP61K25HSR5
(200 sec,
20% Duty Cycle)
352
500
CW
CW
1150
1000
20.5
18
68
58
1. Contact your local Freescale sales office for additional information on specific
circuit designs.
Load Mismatch/Ruggedness
NI--1230GS--4L
MRFE6VP61K25GSR5
Frequency
(MHz)
P
(W)
Test
Voltage
out
Signal Type
VSWR
Result
230
Pulse
> 65:1 at all
1500 Peak
(3 dB
50
No Device
Degradation
(100 sec, 20% Phase Angles
Duty Cycle)
Overdrive)
Gate A
Gate B
Drain A
Drain B
3
4
1
2
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
(Top View)
Note: The backside of the package is the
source terminal for the transistors.
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
Characterized with Series Equivalent Large--Signal Impedance Parameters
Figure 1. Pin Connections
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Freescale Semiconductor, Inc., 2010--2014. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +133
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
C
(1,2)
T
J
225
C
Total Device Dissipation @ T = 25C
Derate above 25C
P
1333
6.67
W
W/C
C
D
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.15
C/W
JC
CW: Case Temperature 63C, 1250 W CW, I = 100 mA, 230 MHz
DQ
Thermal Impedance, Junction to Case
Z
0.03
C/W
JC
Pulse: Case Temperature 66C, 1250 W Pulse, 100 sec Pulse Width, 20% Duty Cycle,
I
= 100 mA, 230 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2, passes 3500 V
B, passes 250 V
IV, passes 4000 V
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Gate--Source Leakage Current
I
—
133
—
—
—
—
—
1
Adc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 100 mA)
V
—
10
20
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
Adc
Adc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(4)
Gate Threshold Voltage
(V = 10 Vdc, I = 1776 Adc)
V
V
1.7
1.9
—
2.2
2.2
2.7
2.9
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 100 mAdc, Measured in Functional Test)
DD
D
(4)
Drain--Source On--Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.15
28.0
GS
D
Forward Transconductance
(V = 10 Vdc, I = 30 Adc)
g
—
—
fs
DS
D
(4)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
2.8
185
562
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 1250 W Peak (250 W Avg.),
DD
DQ
out
f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain
G
23.0
72.5
—
24.0
74.0
-- 1 4
26.0
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
IRL
-- 1 0
dB
Table 5. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) I = 100 mA
DQ
Frequency
(MHz)
P
out
(W)
Signal Type
VSWR
Test Voltage, V
Result
No Device Degradation
DD
230
Pulse
> 65:1 at all
1500 Peak
50
(100 sec, 20% Duty Cycle)
Phase Angles
(3 dB Overdrive)
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
3
- - - -
C22
C23
C24
C13
C10
C11
C12
C21
COAX1
COAX3
R1
L3
C16
L1
C5
C4
C17
C2
C3
C15
C14
C18
C19
L2
C20
C1
L4
R2
COAX2
C6
COAX4
C25
C9
C8
C7
C26
C27
C28
MRFE6VP61K25H
Rev. 3
-- --
Figure 2. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Component Layout — Pulse
Table 6. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Component Designations and Values — Pulse
Part
Description
Part Number
ATC100B200JT500XT
ATC100B270JT500XT
27291SL
Manufacturer
C1
20 pF Chip Capacitor
ATC
C2, C3, C5
C4
27 pF Chip Capacitors
ATC
0.8--8.0 pF Variable Capacitor, Gigatrim
22 F, 35 V Tantalum Capacitors
0.1 F Chip Capacitors
220 nF Chip Capacitors
1000 pF Chip Capacitors
43 pF Chip Capacitor
Johanson
Kemet
AVX
C6, C10
C7, C11
C8, C12
T491X226K035AT
CDR33BX104AKYS
C1812C224K5RACTU
ATC100B102JT50XT
ATC100B430JT500XT
MIN02--002EC750J--F
ATC100B241JT200XT
ATC100B6R2BT500XT
MCGPR63V477M13X26--RH
UT--141C--25
Kemet
ATC
C9, C13, C21, C25
C14
ATC
C15
75 pF Metal Mica
CDE
C16, C17, C18, C19
C20
240 pF Chip Capacitors
6.2 pF Chip Capacitor
ATC
ATC
C22, C23, C24, C26, C27, C28 470 F, 63 V Electrolytic Capacitors
Multicomp
Micro--Coax
Coilcraft
Coilcraft
Vishay
Arlon
Coax1, 2, 3, 4
L1, L2
25 Semi Rigid Coax, 2.2 Shield Length
5 nH Inductors
A02TKLC
L3, L4
6.6 nH Inductors
GA3093--ALC
R1, R2
PCB
10 Chip Resistors
CRCW120610R0JNEA
AD255A
0.030, = 2.55
r
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
4
+
+
+
+
+
+
+
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
2000
1000
66
Ideal
P3dB = 61.9 dBm (1553 W)
P2dB = 61.7 dBm (1472 W)
C
iss
65
64
63
62
61
60
59
C
oss
100
10
1
P1dB = 61.3 dBm
(1333 W)
Actual
C
rss
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
Pulse Width = 100 sec, 20% Duty Cycle
DD
Measured with 30 mV(rms)ac @ 1 MHz
= 0 Vdc
V
GS
0
10
20
30
40
50
35
36
37
38
39
40
41
42
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (dBm) PEAK
in
DS
Note: Each side of device measured separately.
Figure 5. Output Power versus Input Power
Figure 4. Capacitance versus Drain--Source Voltage
26
25
24
23
22
21
20
26
25
24
23
22
90
I
= 100 mA, f = 230 MHz
DQ
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
DD
Pulse Width = 100 sec, 20% Duty Cycle
Pulse Width = 100 sec, 20% Duty Cycle
80
70
60
50
50 V
21
20
19
18
G
ps
45 V
40 V
35 V
40
30
17
16
D
V
= 30 V
DD
100
1000
, OUTPUT POWER (WATTS) PEAK
2000
0
200
400
600
800
1000 1200 1400 1600
P
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 7. Power Gain versus Output Power
Figure 6. Power Gain and Drain Efficiency
versus Output Power
26
25
24
23
22
90
80
70
60
50
40
30
20
90
-- 3 0 _C
25_C
45 V
50 V
40 V
35 V
80
70
60
50
40
V
= 30 V
DD
85_C
T
= --30_C
C
25_C
G
ps
85_C
21
20
19
I
= 100 mA, f = 230 MHz
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
Pulse Width = 100 sec, 20% Duty Cycle
30
20
DQ
DD
Pulse Width = 100 sec, 20% Duty Cycle
D
0
200
400
600
800
1000
1200 1400
1600
100
1000
2000
P
, OUTPUT POWER (WATTS) PEAK
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 9. Power Gain and Drain Efficiency versus
Output Power
Figure 8. Drain Efficiency versus Output Power
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS
9
8
10
10
7
6
5
10
10
10
4
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 1250 W CW, and = 74.6%.
DD
out
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 10. MTTF versus Junction Temperature — CW
V
= 50 Vdc, I = 100 mA, P = 1250 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
230
1.29 + j3.54
2.12 + j2.68
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
load
Z
Z
source
Figure 11. Series Equivalent Test Circuit Source and Load Impedance — 230 MHz Pulse
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
7
V
= 50 Vdc, I = 100 mA
DQ
DD
f
Z
Z
load
source
(MHz)
()
()
(1)
(1)
(1)
1.8
34.4 + j192.0
5.00 - j4.00
27
40
12.5 + j7.00
5.75 + j5.06
4.04 + j5.93
2.20 + j6.70
2.30 + j6.90
2.30 + j7.00
1.60 + j5.00
1.33 + j3.90
1.29 + j3.54
0.98 + j1.45
0.29 + j1.47
7.00 + j0.70
5.39 + j2.62
4.89 + j2.95
4.90 + j2.90
4.10 + j2.50
4.40 + j3.60
3.90 + j1.50
3.50 + j2.50
2.12 + j2.68
1.82 + j2.05
1.79 + j1.80
81.36
88
98
108
144
175
230
352
500
1. Simulated data.
Z
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Z
load
=
Test circuit impedance as measured from
drain to drain, balanced configuration.
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
load
Z
Z
source
Figure 12. Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--Pull
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
8
87.5--108 MHz FM BROADCAST REFERENCE CIRCUIT
COAX1
C15
C16
C1
B1
C19
C18
C17
+
+
COAX3
L4
C3
L2
L3
C7
R1
C8
C9
C4
T1
L1
C10
C11
C5
C2
C12
L5
+
+
C24
Q1
C21
C20
MRFE6VP61K25H Rev. 1
C22
C23
Note: Component numbers C6, C13 and
C14 are not used.
COAX2
Figure 13. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Layout
Table 8. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Designations
and Values
Part
Description
Part Number
2743021447
Manufacturer
Fair--Rite
B1
C1
C2
Long Ferrite Bead
6.8 F, 50 V Chip Capacitor
27 pF Chip Capacitor
C4532X7R1H685K
ATC100B270JT500XT
ATC100B102JT50XT
TDK
ATC
ATC
C3, C7, C8, C9, C10,
C11, C12
1000 pF Chip Capacitors
C4
39 pF Mica Capacitor
MIN02--002DC390J--F
ATC100B3R0CT500XT
ATC200B103KT50XT
C3225JB2A105KT
Cornell Dubilier
C5
3 pF Chip Capacitor
ATC
ATC
TDK
TDK
C15, C22
C16, C23
C17, C24
C18, C19, C20, C21
L1
10K pF Chip Capacitors
1 F, 100 V Chip Capacitors
10 F, 100 V Chip Capacitors
470 F, 63 V Electrolytic Capacitors
39 nH Inductor
C5750X7S2A106MT
MCGPR63V477M13X26--RH Multicomp
1812SMS--39NJLC
A01TKLC
Coilcraft
Coilcraft
L2, L3
2.5 nH Inductors
L4, L5
7 Turn, #16 AWG, ID = 0.3 Inductors
RF Power LDMOS Transistor
11 , 1/4 W Chip Resistor
Balun
Copper Wire
Q1
MRFE6VP61K25HR6
CRCW120611R0FKEA
TUI--9
Freescale
R1
Vishay
T1
Comm Concepts
Comm Concepts
Huber+Suhner
Arlon
Coax1, Coax2
Coax3
Flex Cables (12 ) 5.9
Coax Cable, Quickform 50 , 8.7
TC--12
SUCOFORM 250--01
TC--350
PCB
0.030, = 3.5
r
Heatsink
NI--1230 Copper Heatsink
C193X280T970
Machine Shop
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
9
+
+
+
+
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
10
TYPICAL CHARACTERISTICS — 87.5--108 MHz FM BROADCAST REFERENCE CIRCUIT
30
29
28
90
80
108 MHz
98 MHz
87.5 MHz
70
G
ps
27
26
25
60
50
D
40
108 MHz
98 MHz
24
23
30
20
V
= 50 Vdc, I = 200 mA
DD
DQ
87.5 MHz
100
40
1000
2000
P
, OUTPUT POWER (WATTS)
out
Figure 15. Power Gain and Drain Efficiency
versus Output Power
V
= 50 Vdc, I = 200 mA, P = 1100 W CW
DQ out
DD
f
Z
Z
load
source
MHz
87.5
98
2.20 + j6.70
2.30 + j6.90
2.30 + j7.00
4.90 + j2.90
4.10 + j2.50
4.40 + j3.60
108
Z
Z
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
=
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
load
Z
Z
source
Figure 16. Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load Impedance
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
11
RF Device Data
Freescale Semiconductor, Inc.
144--148 MHz REFERENCE CIRCUIT
COAX1
C17
C15
C16
C18
C1
+
COAX3
B1
C3
L2
R1
C7
C20
C8
C19
C9
T1
C4
C10
C11
C12
L1
C5
C6
C14
C13
MRFE6VP61K25H Rev. 2
*C7, C8, C9, C10, C11, and C12 are mounted vertically.
Note: Component number C2 is not used.
COAX2
Figure 17. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Component Layout
Table 9. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Component Designations and Values
Part
Description
95 , 100 MHz Long Ferrite Bead
6.8 F, 50 V Chip Capacitor
1000 pF Chip Capacitors
Part Number
Manufacturer
B1
C1
2743021447
Fair--Rite
C4532X7R1H685K
TDK
ATC
C3, C5, C7, C8, C9, C10,
C11, C12, C13, C15
ATC100B102KT50XT
C4
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC100B471JT200XT
C3225JB2A105KT
HMK432B7225KM--T
MCGPR100V477M16X32--RH
ATC100B150JT500XT
B10TJLC
ATC
C6
470 pF Chip Capacitor
1 F, 100 V Chip Capacitors
2.2 F, 100 V Chip Capacitor
470 F, 100 V Electrolytic Capacitor
15 pF Chip Capacitors
43 nH Inductor
ATC
C14, C16
C17
TDK
Taiyo Yuden
Multicomp
ATC
C18
C19, C20
L1
Coilcraft
L2
7 Turn, #14 AWG, ID = 0.4 Inductor
11 , 1/4 W Chip Resistor
Balun
Handwound
Freescale
Vishay
R1
CRCW120611R0FKEA
TUI--9
T1
Comm Concepts
Comm Concepts
Huber+Suhner
Arlon
Coax1, Coax2
Coax3
PCB
Flex Cables, 10.2 , 4.7
Coax Cable, 50 , 6.7
TC--12
SUCOFORM250--01
TC--350
0.030”, = 3.50
r
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
12
+
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
13
TYPICAL CHARACTERISTICS — 144--148 MHz REFERENCE CIRCUIT
V
= 50 Vdc, I = 200 mA, P = 1100 W CW
DQ out
DD
f
Z
Z
load
source
MHz
144
1.6 + j5.0
3.9 + j1.5
Z
Z
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
=
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
load
Z
Z
source
Figure 19. Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance
31
30
29
28
27
90
80
V
= 50 Vdc, I = 2500 mA, f = 144 MHz
DQ
DD
G
70
ps
60
50
26
25
24
40
D
30
20
50
100
1000
2000
P
, OUTPUT POWER (WATTS)
out
Figure 20. Power Gain and Drain Efficiency
versus Output Power
0
V
= 50 Vdc
-- 2 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
DD
f1 = 143.9 MHz, f2 = 144.1 MHz
Two--Tone Measurement
I
= 2500 mA
DQ
4500 mA
3rd Order
3rd Order
7th Order
-- 8 0
-- 9 0
4500 mA
5th Order
100
, OUTPUT POWER (WATTS) PEP
7th Order
--100
1
10
1000 2000
P
out
Figure 21. Intermodulation Distortion Products
versus Output Power
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
14
HARMONIC MEASUREMENTS
Marker 1 [T1]
RBW
VBW
SWT
3 MHz RF Att
3 MHz
10 dB
Ref Lvl
1.5 E 04 W
1.018 kW
W
5 ms
Unit
144.00000000 MHz
77.7 dB Offset
B1 [T1]
1.018 kW
144.00000000 MHz
--42.07 dB
144.00501002 MHz
--32.87 dB
288.00501002 MHz
--37.26 dB
432.00501002 MHz
--38.89 dB
576.00501002 MHz
A
1
1 [T1]
2 [T1]
3 [T1]
4 [T1]
144 MHz, 1 kW
1 VIEW
1SA
EXT
H2
H3
H4
H5
2
3
--42 dB
--33 dB
--37 dB
--39 dB
4
1
Center 525 MHz
95 MHz/
Span 950 MHz
Figure 22. 144 MHz Harmonics @ 1 kW
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
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Freescale Semiconductor, Inc.
15
PACKAGE DIMENSIONS
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
16
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
17
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
18
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
19
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
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20
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
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21
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
2
Nov. 2010
Jan. 2011
May 2012
Initial Release of Data Sheet
Fig. 1, Pin Connections, corrected pin 4 label from RF /V to RF /V , p. 1
out GS
in GS
Added Application Circuits Typical Performance table, p. 1
Capable of Handling VSWR bullet: corrected 1250 Peak Output Power value to 1500 and converted to table,
pp. 1, 3
Table 1, Max Ratings: final DC test specification for Drain--Source Voltage changed from +125 to +133 Vdc,
p. 2
Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD
class, p. 2
Table 4, Off Characteristics: final DC test specification for Drain--Source Breakdown Voltage minimum value
changed from 125 to 133 Vdc, p. 2
Table 4, On Characteristics: added Forward Transconductance, p. 2
Fig. 10, MTTF versus Junction Temperature -- CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 7
Added Fig. 12, Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--pull, p. 8
Added Fig. 13, 87.5--108 MHz FM Broadcast Reference Circuit Component Layout, p. 9
Added Table 9, 87.5--108 MHz FM Broadcast Reference Circuit Component Designations and Values, p. 9
Added Fig. 14, 87.5--108 MHz FM Broadband Reference Circuit Schematic, p. 10
Added Fig. 15, Power Gain and Drain Efficiency versus Output Power (87.5--108 MHz), p. 11
Added Fig. 16, Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load
Impedance, p. 11
Added Fig. 17, 144--148 MHz Reference Circuit Component Layout, p. 12
Added Table 9, 144--148 MHz Reference Circuit Component Designations and Values, p. 12
Added Fig. 18, 144--148 MHz Reference Circuit Schematic, p. 13
Added Fig. 19, Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance, p. 14
Added Fig. 20, Power Gain and Drain Efficiency versus Output Power (144--148 MHz), p. 14
Added Fig. 21, Intermodulation Distortion Products versus Output Power (144--148 MHz), p. 14
Added Fig. 22, 144 MHz Harmonics @ 1 kW, p. 15
3
4
Oct. 2012
Mar. 2013
Added part number MRFE6VP61K25GSR5, p. 1
Added 2282--02 (NI--1230S--4 Gull) package isometric, p. 1, and Mechanical Outline, p. 20, 21
MRFE6VP61K25HR6 tape and reel option replaced with MRF6VP61K25HR5 per PCN15551.
Replaced Case Outline 98ASB16977C, Issue E with Issue F, p. 16, 17. Changed dimension C from
0.150--0.200 to CC 0.170--0.190.
Replaced Case Outline 98ARB18247C, Issue F with Issue G, p. 18, 19. Changed dimension C from
0.150--0.200 to CC 0.170--0.190. Added minimum Z dimension R0.00.
Replaced Case Outline 98ASA00459D, Issue O with Issue A, p. 20, 21. Changed dimension C from
0.150--0.200 to CC 0.170--0.190. Corrected positional tolerance for dimension S.
4.1
Mar. 2014
MRFE6VP61K25HR5 part added to data sheet device box, p. 1
MRFE6VP61K25HSR6 tape and reel option replaced with MRFE6VP61K25HSR5 per PCN15551. (Note: this
copy updates the copy from Rev. 4 Revision History to accurately reflect the part number replacement in this
data sheet as described in PCN15551.)
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
22
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E 2014 Freescale Semiconductor, Inc.
Document Number: MRFE6VP61K25H
Rev. 4.1, 3/2014
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