MKV10Z32VFM7 [NXP]

Kinetis V 32-bit MCU, ARM Cortex-M0+ core, 32 KB Flash, 75 MHz, QFN 32;
MKV10Z32VFM7
型号: MKV10Z32VFM7
厂家: NXP    NXP
描述:

Kinetis V 32-bit MCU, ARM Cortex-M0+ core, 32 KB Flash, 75 MHz, QFN 32

外围集成电路
文件: 总53页 (文件大小:3310K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Freescale Semiconductor, Inc.  
Data Sheet: Technical Data  
KV10P48M75  
Rev 3, 02/2014  
Kinetis V Series KV10, 32/16 KB  
MKV10Z32VLC7  
MKV10Z32VFM7  
MKV10Z32VLF7  
MKV10Z16VLC7  
MKV10Z16VFM7  
MKV10Z16VLF7  
Flash  
75 MHz Cortex-M0+ Based Microcontroller  
The Kinetis V Series KV1x MCU family is the entry point into the  
V Series and provides a high-performance, cost-competitive  
solution for 3-phase sensorless BLDC and PMSM motor control.  
Built upon the ARM® Cortex®-M0+ based core running at 75  
MHz with hardware square root and divide capability, it delivers a  
35% increase in performance versus comparable MCUs allowing  
it to target BLDC as well as more computationally demanding  
PMSM motors.  
32 QFN  
5 x 5 x 0.9 mm Pitch  
0.5 mm  
32 LQFP  
7 x 7 x 1.4 mm Pitch  
0.8 mm  
Additional features include:  
• dual 16-bit analog-to-digital controllers (ADCs) sampling at  
up to 1.2 MS/s in 12-bit mode.  
• multiple motor control timers, up to 32 KB of flash memory  
and a comprehensive enablement suite from Freescale  
• third-party resources including reference designs, software  
libraries and powerful motor configuration tools  
48 LQFP  
7 x 7 x 1.4 mm Pitch 0.5 mm  
Performance  
• Up to 75 MHz ARM Cortex-M0+ based core  
Communication interfaces  
• One 16-bit SPI module  
• One I2C module  
• Two UART modules  
Memories and memory interfaces  
• Up to 32 KB of program flash memory  
• Up to 8 KB of RAM  
Timers  
• Programmable delay block  
• One 6-channel FlexTimer (FTM) for motor control/  
general purpose applications  
• Two 2-channel FlexTimers (FTM) with quadrature  
decoder functionality  
• 16-bit low-power timer (LPTMR)  
System peripherals  
• Nine low-power modes to provide power optimization  
based on application requirements  
• 4-channel DMA controller, supporting up to 63 request  
sources  
• SWD interface and Micro Trace buffer  
• Bit Manipulation Engine (BME)  
• External watchdog timer  
Operating Characteristics  
• Voltage range: 1.71 to 3.6 V  
• Advanced independent clocked watchdog  
• Memory Mapped Divide and Square Root (MMDVSQ)  
module  
• Flash write voltage range: 1.71 to 3.6 V  
• Temperature range (ambient): –40 to 105°C  
Analog modules  
Clocks  
• Two 16-bit SAR ADCs, each with two result  
registers for back to back acquisitions  
• 12-bit DAC  
• Analog comparator (CMP) containing a 6-bit DAC  
and programmable reference input  
• 32 to 40 kHz or 3 to 32 MHz crystal oscillator  
• Multipurpose clock generator (MCG) with frequency-  
locked loop referencing either internal or external  
reference clock  
Security and integrity modules  
Human-machine interface  
Freescale reserves the right to change the detail specifications as may be required to  
permit improvements in the design of its products. © 2014 Freescale Semiconductor,  
Inc. All rights reserved.  
Preliminary  
• 80-bit unique identification (ID) number per chip  
• Hardware CRC module to support fast cyclic  
redundancy checks  
• General-purpose I/O  
Ordering Information 1  
Part Number  
Memory  
Maximum number of I\O's  
Flash (KB)  
SRAM (KB)  
MKV10Z32VLC7  
32  
32  
32  
16  
16  
16  
8
8
8
8
8
8
28  
28  
40  
28  
28  
40  
MKV10Z32VFM7  
MKV10Z32VLF7  
MKV10Z16VLC7  
MKV10Z16VFM7  
MKV10Z16VLF7  
1. To confirm current availability of ordererable part numbers, go to http://www.freescale.com and perform a part number  
search.  
Related Resources  
Type  
Selector  
Guide  
Description  
Resource  
Solution Advisor  
The Freescale Solution Advisor is a web-based tool that features  
interactive application wizards and a dynamic product selector.  
Product Brief The Product Brief contains concise overview/summary information to  
enable quick evaluation of a device for design suitability.  
KV10PB1  
Reference  
Manual  
The Reference Manual contains a comprehensive description of the  
structure and function (operation) of a device.  
KV10P48M75RM 1  
KV10P48M751  
Data Sheet  
The Data Sheet includes electrical characteristics and signal  
connections.  
Package  
drawing  
Package dimensions are provided in package drawings.  
QFN 32-pin: 98ASA00473D1  
LQFP 32-pin: 98ASH70029A1  
LQFP 48-pin: 98ASH00962A1  
1. To find the associated resource, go to http://www.freescale.com and perform a search using this term.  
2
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
Figure 1. KV10 block diagram  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
3
Freescale Semiconductor, Inc.  
Table of Contents  
1 Ratings....................................................................................5  
3.6.2 CMP and 6-bit DAC electrical specifications.......31  
3.6.3 12-bit DAC electrical characteristics....................32  
3.7 Timers..............................................................................36  
3.8 Communication interfaces...............................................36  
3.8.1 DSPI switching specifications (limited voltage  
1.1 Thermal handling ratings.................................................5  
1.2 Moisture handling ratings................................................5  
1.3 ESD handling ratings.......................................................5  
1.4 Voltage and current operating ratings.............................5  
2 General...................................................................................6  
2.1 AC electrical characteristics.............................................6  
2.2 Nonswitching electrical specifications..............................7  
2.2.1 Voltage and current operating requirements.......7  
2.2.2 LVD and POR operating requirements................8  
2.2.3 Voltage and current operating behaviors.............8  
2.2.4 Power mode transition operating behaviors........9  
2.2.5 Power consumption operating behaviors............10  
2.2.6 EMC radiated emissions operating behaviors.....16  
2.2.7 Designing with radiated emissions in mind..........17  
2.2.8 Capacitance attributes.........................................17  
2.3 Switching specifications...................................................17  
2.3.1 Device clock specifications..................................17  
2.3.2 General switching specifications.........................18  
2.4 Thermal specifications.....................................................19  
2.4.1 Thermal operating requirements.........................19  
2.4.2 Thermal attributes................................................19  
3 Peripheral operating requirements and behaviors..................20  
3.1 Core modules..................................................................20  
3.1.1 SWD Electricals ..................................................20  
3.2 System modules..............................................................21  
3.3 Clock modules.................................................................21  
3.3.1 MCG specifications..............................................21  
3.3.2 Oscillator electrical specifications........................23  
3.4 Memories and memory interfaces...................................25  
3.4.1 Flash electrical specifications..............................25  
3.5 Security and integrity modules........................................26  
3.6 Analog.............................................................................27  
3.6.1 ADC electrical specifications...............................27  
range)..................................................................36  
3.8.2 DSPI switching specifications (full voltage  
range)..................................................................38  
3.8.3 I2C.......................................................................40  
3.8.4 UART...................................................................40  
4 Dimensions.............................................................................40  
4.1 Obtaining package dimensions.......................................40  
5 Pinout......................................................................................41  
5.1 Signal Multiplexing and Pin Assignments........................41  
5.2 KV10 Pinouts...................................................................43  
6 Ordering parts.........................................................................46  
6.1 Determining valid orderable parts....................................46  
7 Part identification.....................................................................46  
7.1 Description.......................................................................47  
7.2 Format.............................................................................47  
7.3 Fields...............................................................................47  
7.4 Example...........................................................................47  
8 Terminology and guidelines....................................................48  
8.1 Definition: Operating requirement....................................48  
8.2 Definition: Operating behavior.........................................48  
8.3 Definition: Attribute..........................................................48  
8.4 Definition: Rating.............................................................49  
8.5 Result of exceeding a rating............................................49  
8.6 Relationship between ratings and operating  
requirements....................................................................50  
8.7 Guidelines for ratings and operating requirements..........50  
8.8 Definition: Typical value...................................................51  
8.9 Typical Value Conditions.................................................52  
9 Revision history.......................................................................52  
4
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
Ratings  
1 Ratings  
1.1 Thermal handling ratings  
Symbol  
TSTG  
Description  
Min.  
–55  
Max.  
150  
Unit  
°C  
Notes  
Storage temperature  
Solder temperature, lead-free  
1
2
TSDR  
260  
°C  
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.  
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic  
Solid State Surface Mount Devices.  
1.2 Moisture handling ratings  
Symbol  
Description  
Min.  
Max.  
Unit  
Notes  
MSL  
Moisture sensitivity level  
3
1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic  
Solid State Surface Mount Devices.  
1.3 ESD handling ratings  
Symbol  
VHBM  
Description  
Min.  
-2000  
-500  
Max.  
+2000  
+500  
Unit  
V
Notes  
Electrostatic discharge voltage, human-body model  
1
2
VCDM  
Electrostatic discharge voltage, charged-device  
model  
V
ILAT  
Latch-up current at ambient temperature of 105 °C  
-100  
+100  
mA  
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human  
Body Model (HBM).  
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for  
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.  
1.4 Voltage and current operating ratings  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
5
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
 
 
 
 
 
 
 
General  
Symbol  
Description  
Min.  
–0.3  
Max.  
3.8  
Unit  
V
VDD  
IDD  
Digital supply voltage  
Digital supply current  
120  
VDD + 0.31  
mA  
V
VIO  
Digital pin input voltage (except open drain pins)  
Open drain pins (PTC6 and PTC7)  
–0.3  
–0.3  
–25  
5.5  
V
ID  
Instantaneous maximum current single pin limit (applies to  
all port pins)  
25  
mA  
VDDA  
Analog supply voltage  
VDD – 0.3  
VDD + 0.3  
V
1. Maximum value of VIO (except open drain pins) must be 3.8 V.  
2 General  
Electromagnetic compatibility (EMC) performance depends on the environment in  
which the MCU resides. Board design and layout, circuit topology choices, location,  
characteristics of external components, and MCU software operation play a significant  
role in EMC performance.  
See the following applications notes available on freescale.com for guidelines on  
optimizing EMC performance.  
AN2321: Designing for Board Level Electromagnetic Compatibility  
AN1050: Designing for Electromagnetic Compatibility (EMC) with HCMOS  
Microcontrollers  
AN1263: Designing for Electromagnetic Compatibility with Single-Chip  
Microcontrollers  
AN2764: Improving the Transient Immunity Performance of Microcontroller-Based  
Applications  
AN1259: System Design and Layout Techniques for Noise Reduction in MCU-  
Based Systems  
2.1 AC electrical characteristics  
Unless otherwise specified, propagation delays are measured from the 50% to the 50%  
point, and rise and fall times are measured at the 20% and 80% points, as shown in the  
following figure.  
6
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
General  
Figure 2. Input signal measurement reference  
All digital I/O switching characteristics, unless otherwise specified, assume:  
1. output pins  
• have CL=30pF loads,  
• are slew rate disabled, and  
• are normal drive strength  
2.2 Nonswitching electrical specifications  
2.2.1 Voltage and current operating requirements  
Table 1. Voltage and current operating requirements  
Symbol  
VDD  
Description  
Min.  
1.71  
1.71  
–0.1  
–0.1  
Max.  
3.6  
Unit  
V
Notes  
Supply voltage  
VDDA  
Analog supply voltage  
3.6  
V
VDD – VDDA VDD-to-VDDA differential voltage  
VSS – VSSA VSS-to-VSSA differential voltage  
0.1  
V
0.1  
V
VIH  
Input high voltage  
• 2.7 V ≤ VDD ≤ 3.6 V  
• 1.71 V ≤ VDD ≤ 2.7 V  
0.7 × VDD  
V
V
0.75 × VDD  
VIL  
Input low voltage  
• 2.7 V ≤ VDD ≤ 3.6 V  
• 1.71 V ≤ VDD ≤ 2.7 V  
0.35 × VDD  
0.3 × VDD  
V
V
VHYS  
IICIO  
Input hysteresis  
0.06 × VDD  
-5  
V
Pin negative DC injection current—single pin  
• VIN < VSS–0.3V  
1
mA  
IICcont  
Contiguous pin DC injection current—regional limit,  
includes sum of negative injection currents or sum of  
positive injection currents of 16 contiguous pins  
–25  
mA  
Table continues on the next page...  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
7
Freescale Semiconductor, Inc.  
 
 
General  
Table 1. Voltage and current operating requirements (continued)  
Symbol  
Description  
• Negative current injection  
Min.  
Max.  
Unit  
Notes  
VRAM  
VDD voltage required to retain RAM  
1.2  
V
1. All I/O pins are internally clamped to VSS through an ESD protection diode. There is no diode connection to VDD. If VIN  
greater than VIO_MIN (= VSS-0.3 V) is observed, then there is no need to provide current limiting resistors at the pads. If  
this limit cannot be observed, then a current limiting resistor is required. The negative DC injection current limiting  
resistor is calculated as R = (VIO_MIN - VIN)/IICIO  
.
2.2.2 LVD and POR operating requirements  
Table 2. VDD supply LVD and POR operating requirements  
Symbol Description  
Min.  
0.8  
Typ.  
1.1  
Max.  
1.5  
Unit  
V
Notes  
VPOR  
Falling VDD POR detect voltage  
VLVDH  
Falling low-voltage detect threshold — high  
range (LVDV=01)  
2.48  
2.56  
2.64  
V
Low-voltage warning thresholds — high range  
• Level 1 falling (LVWV=00)  
1
VLVW1H  
VLVW2H  
VLVW3H  
VLVW4H  
2.62  
2.72  
2.82  
2.92  
2.70  
2.80  
2.90  
3.00  
2.78  
2.88  
2.98  
3.08  
V
V
V
V
• Level 2 falling (LVWV=01)  
• Level 3 falling (LVWV=10)  
• Level 4 falling (LVWV=11)  
VHYSH  
VLVDL  
Low-voltage inhibit reset/recover hysteresis —  
high range  
60  
mV  
V
Falling low-voltage detect threshold — low  
range (LVDV=00)  
1.54  
1.60  
1.66  
Low-voltage warning thresholds — low range  
• Level 1 falling (LVWV=00)  
1
VLVW1L  
VLVW2L  
VLVW3L  
VLVW4L  
1.74  
1.84  
1.94  
2.04  
1.80  
1.90  
2.00  
2.10  
1.86  
1.96  
2.06  
2.16  
V
V
V
V
• Level 2 falling (LVWV=01)  
• Level 3 falling (LVWV=10)  
• Level 4 falling (LVWV=11)  
VHYSL  
Low-voltage inhibit reset/recover hysteresis —  
low range  
40  
mV  
VBG  
tLPO  
Bandgap voltage reference  
0.97  
900  
1.00  
1.03  
V
Internal low power oscillator period — factory  
trimmed  
1000  
1100  
μs  
1. Rising thresholds are falling threshold + hysteresis voltage  
8
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
 
General  
Notes  
2.2.3 Voltage and current operating behaviors  
Table 3. Voltage and current operating behaviors  
Symbol  
Description  
Min.  
Max.  
Unit  
VOH  
Output high voltage — Normal drive pad  
All port pins, except PTC6 and PTC7  
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –5 mA  
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –1.5 mA  
VDD – 0.5  
VDD – 0.5  
V
V
VOH  
Output high voltage — High drive pad  
PTB0, PTB1, PTC3, PTC4, PTD4, PTD5, PTD6,  
PTD7 pins  
VDD – 0.5  
VDD – 0.5  
V
V
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –18 mA  
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –6 mA  
IOHT  
VOL  
Output high current total for all ports  
Output low voltage — Normal drive pad  
All port pins  
100  
mA  
0.5  
0.5  
V
V
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 5 mA  
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 1.5 mA  
VOL  
Output low voltage — High drive pad  
PTB0, PTB1, PTC3, PTC4, PTD4, PTD5, PTD6,  
PTD7 pins  
0.5  
0.5  
V
V
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 18 mA  
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 6 mA  
IOLT  
IIN  
Output low current total for all ports  
100  
1
mA  
Input leakage current (per pin) for full temperature  
range  
μA  
IIN  
IIN  
Input leakage current (per pin) at 25 °C  
0.025  
41  
μA  
μA  
1
1
Input leakage current (total all pins) for full  
temperature range  
IOZ  
Hi-Z (off-state) leakage current (per pin)  
Internal pullup resistors  
1
μA  
kΩ  
RPU  
20  
50  
2
1. Measured at VDD = 3.6 V  
2. Measured at VDD supply voltage = VDD min and Vinput = VSS  
2.2.4 Power mode transition operating behaviors  
All specifications except tPOR and VLLSxRUN recovery times in the following  
table assume this clock configuration:  
• CPU and system clocks = 75 MHz  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
9
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
General  
• Bus and flash clock = 25 MHz  
• FEI clock mode  
Table 4. Power mode transition operating behaviors  
Symbol Description  
Min.  
Typ.  
Max.  
Unit  
Notes  
tPOR After a POR event, amount of time from the  
300  
μs  
point VDD reaches 1.8 V to execution of the first  
instruction across the operating temperature  
range of the chip.  
• VLLS0 RUN  
• VLLS1 RUN  
• VLLS3 RUN  
• VLPS RUN  
• STOP RUN  
106  
106  
47  
115  
115  
53  
μs  
μs  
μs  
μs  
μs  
4.5  
4.5  
4.8  
4.8  
2.2.5 Power consumption operating behaviors  
Table 5. Power consumption operating behaviors  
Symbol Description  
Min.  
Typ.  
Max.  
Unit  
Notes  
1
IDDA  
Analog supply current  
5
mA  
IDD_RUN Run mode current — all peripheral clocks  
disabled, code executing from flash  
Target IDD  
• at 1.8 V 50 MHz (25 MHz Bus)  
• at 3.0 V 50 MHz (25 MHz Bus)  
5
6.3  
6.3  
7.8  
7.5  
mA  
mA  
mA  
mA  
5
• at 1.8 V 75 MHz (25 MHz Bus)  
• at 3.0 V 75 MHz (25 MHz Bus)  
6.5  
6.5  
IDD_RUN Run mode current — all peripheral clocks  
enabled, code executing from flash  
Target IDD  
• at 1.8 V 50 MHz  
• at 3.0 V 50 MHz  
• at 1.8 V 75 MHz  
• at 3.0 V 75 MHz  
7.1  
7.1  
9.4  
9.4  
4
8.2  
8
mA  
mA  
mA  
mA  
mA  
10.9  
10.6  
IDD_WAIT Wait mode high frequency 75 MHz current at  
3.0 V — all peripheral clocks disabled  
Table continues on the next page...  
10  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
General  
Table 5. Power consumption operating behaviors (continued)  
Symbol Description  
Min.  
Typ.  
Max.  
Unit  
Notes  
IDD_WAIT Wait mode reduced frequency 50 MHz current  
at 3.0 V — all peripheral clocks disabled  
3.4  
mA  
IDD_VLPR Very-Low-Power Run mode current 4 MHz at  
3.0 V — all peripheral clocks disabled  
215  
313  
244  
149  
μA  
μA  
μA  
μA  
4 MHz  
CPU  
speed, 1  
MHz bus  
speed.  
IDD_VLPR Very-Low-Power Run mode current 4 MHz at  
3.0 V — all peripheral clocks enabled  
4 MHz  
CPU  
speed, 1  
MHz bus  
speed.  
IDD_VLPW Very-Low-Power Wait mode current at 3.0 V —  
all peripheral clocks enabled  
4 MHz  
CPU  
speed, 1  
MHz bus  
speed.  
IDD_VLPW Very-Low-Power Wait mode current at 3.0 V —  
all peripheral clocks disabled  
4 MHz  
CPU  
speed, 1  
MHz bus  
speed.  
IDD_STOP Stop mode current at 3.0 V  
• -40 °C to 25 °C  
248  
261  
278  
307  
381  
280  
• at 50 °C  
• at 70 °C  
• at 85 °C  
• at 105 °C  
μA  
IDD_VLPS Very-Low-Power Stop mode current at 3.0 V  
• -40 °C to 25 °C  
2.2  
4.2  
• at 50 °C  
• at 70 °C  
• at 85 °C  
• at 105 °C  
8.8  
μA  
μA  
16.2  
36.7  
IDD_VLLS3 Very-Low-Leakage Stop mode 3 current at 3.0 V  
• -40 °C to 25 °C  
1.3  
1.9  
3.3  
5.8  
13  
• at 50 °C  
• at 70 °C  
• at 85 °C  
• at 105 °C  
IDD_VLLS1 Very-Low-Leakage Stop mode 1 current at 3.0 V  
• -40°C to 25°C  
μA  
0.8  
Table continues on the next page...  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
11  
Freescale Semiconductor, Inc.  
General  
Table 5. Power consumption operating behaviors (continued)  
Symbol Description  
Min.  
Typ.  
Max.  
Unit  
Notes  
• at 50°C  
• at 70°C  
• at 85°C  
• at 105°C  
1.2  
2.2  
4
9.4  
IDD_VLLS0 Very-Low-Leakage Stop mode 0 current  
(SMC_STOPCTRL[PORPO] = 0) at 3.0 V  
• -40 °C to 25 °C  
μA  
0.279  
0.638  
1.63  
3.4  
• at 50 °C  
• at 70 °C  
• at 85 °C  
• at 105 °C  
8.9  
IDD_VLLS0 Very-Low-Leakage Stop mode 0 current  
(SMC_STOPCTRL[PORPO] = 1) at 3.0 V  
• -40 °C to 25 °C  
μA  
2
0.098  
0.448  
1.4  
• at 50 °C  
• at 70 °C  
• at 85 °C  
• at 105 °C  
3.19  
8.47  
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See  
each module's specification for its supply current.  
2. No brownout  
Table 6. Low power mode peripheral adders — typical value  
Symbol  
Description  
Temperature (°C)  
Unit  
-40  
25  
50  
70  
85  
105  
IIREFSTEN4MHz  
4 MHz internal reference clock (IRC)  
adder. Measured by entering STOP or  
VLPS mode with 4 MHz IRC enabled.  
56  
56  
56  
56  
56  
56  
µA  
IIREFSTEN32KHz  
IEREFSTEN4MHz  
IEREFSTEN32KHz  
32 kHz internal reference clock (IRC)  
adder. Measured by entering STOP  
mode with the 32 kHz IRC enabled.  
52  
52  
52  
52  
52  
52  
µA  
uA  
External 4 MHz crystal clock adder.  
Measured by entering STOP or VLPS  
mode with the crystal enabled.  
206  
228  
237  
245  
251  
258  
External 32 kHz crystal clock adder by  
means of the OSC0_CR[EREFSTEN  
and EREFSTEN] bits. Measured by  
entering all modes with the crystal  
enabled.  
440  
490  
540  
560  
570  
580  
Table continues on the next page...  
12  
Freescale Semiconductor, Inc.  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
 
 
General  
Unit  
Table 6. Low power mode peripheral adders — typical value (continued)  
Symbol  
Description  
Temperature (°C)  
-40  
25  
50  
70  
85  
105  
VLLS1  
VLLS3  
VLPS  
440  
490  
540  
560  
570  
580  
680  
680  
nA  
510  
510  
560  
560  
560  
560  
560  
560  
610  
610  
STOP  
ICMP  
CMP peripheral adder measured by  
placing the device in VLLS1 mode with  
CMP enabled using the 6-bit DAC and a  
single external input for compare.  
22  
22  
22  
22  
22  
22  
µA  
Includes 6-bit DAC power consumption.  
IUART  
UART peripheral adder measured by  
placing the device in STOP or VLPS  
mode with selected clock source waiting  
for RX data at 115200 baud rate.  
Includes selected clock source power  
consumption.  
66  
66  
66  
66  
66  
66  
µA  
µA  
µA  
MCGIRCLK (4 MHz internal reference  
clock)  
214  
237  
246  
254  
260  
268  
OSCERCLK (4 MHz external crystal)  
ISPI  
SPI peripheral adder measured by  
placing the device in STOP or VLPS  
mode with selected clock source waiting  
for RX data at 115200 baud rate.  
Includes selected clock source power  
consumption.  
66  
66  
66  
66  
66  
66  
MCGIRCLK (4 MHz internal reference  
clock)  
214  
237  
246  
254  
260  
268  
OSCERCLK (4 MHz external crystal)  
II2C  
I2C peripheral adder measured by  
placing the device in STOP or VLPS  
mode with selected clock source waiting  
for RX data at 115200 baud rate.  
Includes selected clock source power  
consumption.  
66  
66  
66  
66  
66  
66  
MCGIRCLK (4 MHz internal reference  
clock)  
214  
237  
246  
254  
260  
268  
OSCERCLK (4 MHz external crystal)  
IFTM  
FTM peripheral adder measured by  
placing the device in STOP or VLPS  
mode with selected clock source  
configured for output compare  
generating 100Hz clock signal. No load  
is placed on the I/O generating the  
clock signal. Includes selected clock  
source and I/O switching currents.  
µA  
150  
150  
150  
150  
150  
150  
Table continues on the next page...  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
13  
Freescale Semiconductor, Inc.  
General  
Table 6. Low power mode peripheral adders — typical value (continued)  
Symbol  
Description  
Temperature (°C)  
Unit  
-40  
25  
50  
70  
85  
105  
MCGIRCLK (4 MHz internal reference  
clock)  
300  
45  
300  
45  
300  
45  
320  
45  
340  
45  
350  
45  
OSCERCLK (4 MHz external crystal)  
IBG  
Bandgap adder when BGEN bit is set  
and device is placed in VLPx, LLS, or  
VLLSx mode.  
µA  
µA  
IADC  
ADC peripheral adder combining the  
measured values at VDD and VDDA by  
placing the device in STOP or VLPS  
mode. ADC is configured for low power  
mode using the internal clock and  
continuous conversions.  
366  
366  
366  
366  
366  
366  
IWDOG  
WDOG peripheral adder measured by  
placing the device in STOP or VLPS  
mode with selected clock source waiting  
for RX data at 115200 baud rate.  
Includes selected clock source power  
consumption.  
66  
66  
66  
66  
66  
66  
µA  
MCGIRCLK (4 MHz internal reference  
clock)  
214  
237  
246  
254  
260  
268  
OSCERCLK (4 MHz external crystal)  
2.2.5.1 Diagram: Typical IDD_RUN operating behavior  
The following data was measured under these conditions:  
• MCG in FBE for run mode (except for 75 MHz which is in FEE mode), and BLPE  
for VLPR mode  
• No GPIOs toggled  
• Code execution from flash with cache enabled  
• For the ALLOFF curve, all peripheral clocks are disabled except FTFA  
14  
Freescale Semiconductor, Inc.  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
General  
Temp (C)=25,VDD=3.6V,CACHE=ENABLE,Code Residence=Flash  
All Peripheral Clk Gates  
Clk Ratio  
Core-Bus-Flash  
CoreFreq (Mhz)  
Figure 3. Run mode supply current vs. core frequency  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
15  
Freescale Semiconductor, Inc.  
General  
Temp(C)=25,VDD=3.6V,CACHE=ENABLE,CodeResidence=Flash  
150.00E-06  
All Peripheral Clk Gates  
ALLON  
Clk Ratio  
Core-Bus-Flash  
CoreFreq (Mhz)  
Figure 4. VLPR mode current vs. core frequency  
2.2.6 EMC radiated emissions operating behaviors  
Table 7. EMC radiated emissions operating behaviors  
Symbol  
Description  
Frequency  
band  
Typ.  
Unit  
Notes  
(MHz)  
VRE1  
VRE2  
Radiated emissions voltage, band 1  
Radiated emissions voltage, band 2  
Radiated emissions voltage, band 3  
Radiated emissions voltage, band 4  
IEC level  
0.15–50  
50–150  
15  
17  
12  
4
dBμV  
dBμV  
dBμV  
dBμV  
1, 2  
VRE3  
150–500  
500–1000  
0.15–1000  
VRE4  
VRE_IEC  
M
2, 3  
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150  
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement  
of Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and  
Wideband TEM Cell Method. Measurements were made while the microcontroller was running basic application code.  
16  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
General  
The reported emission level is the value of the maximum measured emission, rounded up to the next whole number,  
from among the measured orientations in each frequency range.  
2. VDD = 3.3 V, TA = 25 °C, fOSC = 10 MHz (crystal), fSYS = 75 MHz, fBUS = 25 MHz  
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and  
Wideband TEM Cell Method  
2.2.7 Designing with radiated emissions in mind  
To find application notes that provide guidance on designing your system to minimize  
interference from radiated emissions:  
1. Go to www.freescale.com.  
2. Perform a keyword search for “EMC design.”  
2.2.8 Capacitance attributes  
Table 8. Capacitance attributes  
Symbol  
CIN_A  
Description  
Min.  
Max.  
Unit  
pF  
Input capacitance: analog pins  
Input capacitance: digital pins  
7
7
CIN_D  
pF  
2.3 Switching specifications  
2.3.1 Device clock specifications  
Table 9. Device clock specifications  
Symbol  
Description  
Min.  
Max.  
Unit  
Notes  
Normal run mode  
fSYS  
fBUS  
fFLASH  
fLPTMR  
System and core clock  
Bus clock  
48  
24  
24  
24  
MHz  
MHz  
MHz  
MHz  
Flash clock  
LPTMR clock  
High Speed run mode  
fSYS  
fBUS  
fFLASH  
fLPTMR  
System and core clock  
Bus clock  
75  
25  
25  
25  
MHz  
MHz  
MHz  
MHz  
Flash clock  
LPTMR clock  
Table continues on the next page...  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
17  
Freescale Semiconductor, Inc.  
 
 
 
 
 
 
General  
Table 9. Device clock specifications (continued)  
Symbol  
Description  
Min.  
Max.  
Unit  
Notes  
fFTM  
FTM clock  
75  
MHz  
VLPR mode  
fSYS  
fBUS  
System and core clock  
Bus clock  
4
1
MHz  
MHz  
MHz  
MHz  
MHz  
MHz  
MHz  
fFLASH  
fLPTMR  
fERCLK  
Flash clock  
1
LPTMR clock  
25  
16  
25  
16  
External reference clock  
fLPTMR_pin LPTMR clock  
fLPTMR_ERCL LPTMR external reference clock  
K
fosc_hi_2  
Oscillator crystal or resonator frequency — high  
16  
MHz  
frequency mode (high range)  
(MCG_C2[RANGE]=1x)  
2.3.2 General switching specifications  
These general purpose specifications apply to all signals configured for GPIO, UART,  
and I2C signals.  
Table 10. General switching specifications  
Symbol  
Description  
Min.  
Max.  
Unit  
Notes  
GPIO pin interrupt pulse width (digital glitch filter  
disabled) — Synchronous path  
1.5  
Bus clock  
cycles  
1
External RESET and NMI pin interrupt pulse width —  
Asynchronous path  
100  
16  
ns  
2
GPIO pin interrupt pulse width — Asynchronous path  
Port rise and fall time  
Fast slew rate  
ns  
2
3
8
7
ns  
ns  
1.71≤ VDD ≤ 2.7 V  
2.7 ≤ VDD ≤ 3.6 V  
Port rise and fall time  
Slow slew rate  
15  
25  
ns  
ns  
1.71≤ VDD ≤ 2.7 V  
2.7 ≤ VDD ≤ 3.6 V  
1. The greater synchronous and asynchronous timing must be met.  
2. This is the shortest pulse that is guaranteed to be recognized.  
3. For high drive pins with high drive enabled, load is 75pF; other pins load (low drive) is 25pF.  
18  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
 
General  
2.4 Thermal specifications  
2.4.1 Thermal operating requirements  
Table 11. Thermal operating requirements  
Symbol  
TJ  
Description  
Min.  
–40  
–40  
Max.  
125  
Unit  
Die junction temperature  
Ambient temperature  
°C  
°C  
TA  
105  
2.4.2 Thermal attributes  
Table 12. Thermal attributes  
Board type  
Symbol  
Description  
48 LQFP 32 LQFP 32 QFN  
Unit  
Notes  
Single-layer (1S)  
RθJA  
Thermal resistance, junction to  
ambient (natural convection)  
81  
57  
68  
51  
35  
25  
7
85  
57  
72  
50  
33  
25  
7
98  
34  
82  
28  
14  
2.5  
8
°C/W  
1
Four-layer (2s2p)  
RθJA  
Thermal resistance, junction to  
ambient (natural convection)  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Single-layer (1S)  
RθJMA Thermal resistance, junction to  
ambient (200 ft./min. air speed)  
Four-layer (2s2p)  
RθJMA Thermal resistance, junction to  
ambient (200 ft./min. air speed)  
RθJB  
RθJC  
ΨJT  
Thermal resistance, junction to  
board  
2
3
4
Thermal resistance, junction to  
case  
Thermal characterization  
parameter, junction to package  
top outside center (natural  
convection)  
1. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental  
Conditions—Natural Convection (Still Air), or EIA/JEDEC Standard JESD51-6, Integrated Circuit Thermal Test  
Method Environmental Conditions—Forced Convection (Moving Air).  
2. Determined according to JEDEC Standard JESD51-8, Integrated Circuit Thermal Test Method Environmental  
Conditions—Junction-to-Board.  
3. Determined according to Method 1012.1 of MIL-STD 883, Test Method Standard, Microcircuits, with the cold plate  
temperature used for the case temperature. The value includes the thermal resistance of the interface material  
between the top of the package and the cold plate.  
4. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental  
Conditions—Natural Convection (Still Air).  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
19  
Freescale Semiconductor, Inc.  
Preliminary  
 
 
 
 
 
 
 
Peripheral operating requirements and behaviors  
3 Peripheral operating requirements and behaviors  
3.1 Core modules  
3.1.1 SWD Electricals  
Table 13. SWD full voltage range electricals  
Symbol  
Description  
Min.  
Max.  
Unit  
Operating voltage  
1.71  
3.6  
V
J1  
SWD_CLK frequency of operation  
• Serial wire debug  
0
25  
MHz  
ns  
J2  
J3  
SWD_CLK cycle period  
SWD_CLK clock pulse width  
• Serial wire debug  
1/J1  
20  
ns  
J4  
J9  
SWD_CLK rise and fall times  
10  
0
3
ns  
ns  
ns  
ns  
ns  
SWD_DIO input data setup time to SWD_CLK rise  
SWD_DIO input data hold time after SWD_CLK rise  
SWD_CLK high to SWD_DIO data valid  
SWD_CLK high to SWD_DIO high-Z  
32  
J10  
J11  
J12  
5
J2  
J4  
J3  
J3  
SWD_CLK (input)  
J4  
Figure 5. Serial wire clock input timing  
20  
Freescale Semiconductor, Inc.  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
 
 
 
Peripheral operating requirements and behaviors  
SWD_CLK  
SWD_DIO  
SWD_DIO  
SWD_DIO  
SWD_DIO  
J9  
J10  
Input data valid  
J11  
Output data valid  
J12  
J11  
Output data valid  
Figure 6. Serial wire data timing  
3.2 System modules  
There are no specifications necessary for the device's system modules.  
3.3 Clock modules  
3.3.1 MCG specifications  
Table 14. MCG specifications  
Symbol Description  
Min.  
Typ.  
Max.  
Unit  
Notes  
fints_ft Internal reference frequency (slow clock) —  
32.768  
kHz  
factory trimmed at nominal VDD and 25 °C  
fints_t  
Internal reference frequency (slow clock) —  
user trimmed  
31.25  
39.0625  
0.6  
kHz  
Δfdco_res_t Resolution of trimmed average DCO output  
frequency at fixed voltage and temperature —  
using SCTRIM and SCFTRIM  
0.3  
%fdco  
1
Table continues on the next page...  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
21  
Freescale Semiconductor, Inc.  
 
 
 
Peripheral operating requirements and behaviors  
Table 14. MCG specifications (continued)  
Symbol Description  
Min.  
Typ.  
Max.  
Unit  
Notes  
Δfdco_t  
Total deviation of trimmed average DCO output  
frequency over voltage and temperature  
+0.5/-0.7  
2
%fdco  
1, 2  
Δfdco_t  
Total deviation of trimmed average DCO output  
frequency over fixed voltage and temperature  
range of 0 - 70 °C  
0.4  
1.5  
%fdco  
1, 2  
fintf_ft  
Internal reference frequency (fast clock) —  
factory trimmed at nominal VDD and 25 °C  
4
3
MHz  
Δfintf_ft  
Frequency deviation of internal reference clock  
(fast clock) over temperature and voltage —  
factory trimmed at nominal VDD and 25 °C  
+1/-2  
%fintf_ft  
2
fintf_t  
Internal reference frequency (fast clock) —  
user trimmed at nominal VDD and 25 °C  
3
5
MHz  
kHz  
kHz  
floc_low  
Loss of external clock minimum frequency —  
RANGE = 00  
(3/5) x  
fints_t  
floc_high Loss of external clock minimum frequency —  
RANGE = 01, 10, or 11  
(16/5) x  
fints_t  
FLL  
ffll_ref  
fdco  
FLL reference frequency range  
31.25  
20  
39.0625  
25  
kHz  
DCO output  
Low range (DRS = 00,  
20.97  
MHz  
3, 4  
frequency range  
DMX32 = 0)  
640 × ffll_ref  
Mid range (DRS = 01,  
DMX32 = 0)  
40  
60  
41.94  
62.915  
23.99  
48  
75  
MHz  
MHz  
MHz  
MHz  
MHz  
1280 × ffll_ref  
Mid range (DRS = 10,  
DMX32 = 0)  
1920 x ffll_ref  
5
6
fdco_t_DMX3 DCO output  
Low range (DRS = 00,  
DMX32 = 1)  
frequency  
2
732 × ffll_ref  
Mid range (DRS = 01,  
DMX32 = 1)  
47.97  
1464 × ffll_ref  
Mid range (DRS = 10,  
DMX32 = 1)  
71.991  
2197 × ffll_ref  
Jcyc_fll  
FLL period jitter  
• fVCO = 75 MHz  
180  
1
ps  
7
8
tfll_acquire FLL target frequency acquisition time  
ms  
1. This parameter is measured with the internal reference (slow clock) being used as a reference to the FLL (FEI clock  
mode).  
2. The deviation is relative to the factory trimmed frequency at nominal VDD and 25 °C, fints_ft  
.
3. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32 = 0.  
22  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
Peripheral operating requirements and behaviors  
4. The resulting system clock frequencies must not exceed their maximum specified values. The DCO frequency  
deviation (Δfdco_t) over voltage and temperature must be considered.  
5. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32 = 1.  
6. The resulting clock frequency must not exceed the maximum specified clock frequency of the device.  
7. This specification is based on standard deviation (RMS) of period or frequency.  
8. This specification applies to any time the FLL reference source or reference divider is changed, trim value is changed,  
DMX32 bit is changed, DRS bits are changed, or there is a change from FLL disabled (BLPE, BLPI) to FLL enabled  
(FEI, FEE, FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already  
running.  
3.3.2 Oscillator electrical specifications  
3.3.2.1 Oscillator DC electrical specifications  
Table 15. Oscillator DC electrical specifications  
Symbol Description  
VDD Supply voltage  
Min.  
Typ.  
Max.  
Unit  
Notes  
1.71  
3.6  
V
IDDOSC Supply current — low-power mode (HGO=0)  
1
• 32 kHz  
• 4 MHz  
• 8 MHz  
• 16 MHz  
• 24 MHz  
• 32 MHz  
500  
200  
300  
950  
1.2  
nA  
μA  
μA  
μA  
mA  
mA  
1.5  
IDDOSC Supply current — high gain mode (HGO=1)  
1
• 4 MHz  
• 8 MHz  
• 16 MHz  
• 24 MHz  
• 32 MHz  
500  
600  
2.5  
3
μA  
μA  
mA  
mA  
mA  
4
Cx  
Cy  
RF  
EXTAL load capacitance  
XTAL load capacitance  
23  
2, 3  
24  
Feedback resistor — low-frequency, low-power  
mode (HGO=0)  
MΩ  
MΩ  
MΩ  
MΩ  
Feedback resistor — low-frequency, high-gain  
mode (HGO=1)  
10  
1
Feedback resistor — high-frequency, low-  
power mode (HGO=0)  
Feedback resistor — high-frequency, high-gain  
mode (HGO=1)  
Table continues on the next page...  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
23  
Freescale Semiconductor, Inc.  
 
 
 
 
 
 
Peripheral operating requirements and behaviors  
Table 15. Oscillator DC electrical specifications (continued)  
Symbol Description  
Min.  
Typ.  
Max.  
Unit  
Notes  
RS Series resistor — low-frequency, low-power  
kΩ  
mode (HGO=0)  
Series resistor — low-frequency, high-gain  
mode (HGO=1)  
200  
kΩ  
kΩ  
Series resistor — high-frequency, low-power  
mode (HGO=0)  
Series resistor — high-frequency, high-gain  
mode (HGO=1)  
0
kΩ  
5
Vpp  
Peak-to-peak amplitude of oscillation (oscillator  
mode) — low-frequency, low-power mode  
(HGO=0)  
0.6  
V
Peak-to-peak amplitude of oscillation (oscillator  
mode) — low-frequency, high-gain mode  
(HGO=1)  
VDD  
0.6  
V
V
V
Peak-to-peak amplitude of oscillation (oscillator  
mode) — high-frequency, low-power mode  
(HGO=0)  
Peak-to-peak amplitude of oscillation (oscillator  
mode) — high-frequency, high-gain mode  
(HGO=1)  
VDD  
1. VDD=3.3 V, Temperature =25 °C  
2. See crystal or resonator manufacturer's recommendation  
3. Cx,Cy can be provided by using the integrated capacitors when the low frequency oscillator (RANGE = 00) is used. For  
all other cases external capacitors must be used.  
4. When low power mode is selected, RF is integrated and must not be attached externally.  
5. The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to  
any other devices.  
3.3.2.2 Oscillator frequency specifications  
Table 16. Oscillator frequency specifications  
Symbol Description  
fosc_lo Oscillator crystal or resonator frequency — low-  
frequency mode (MCG_C2[RANGE]=00)  
Min.  
Typ.  
Max.  
Unit  
Notes  
32  
40  
kHz  
fosc_hi_1 Oscillator crystal or resonator frequency — high-  
frequency mode (low range)  
3
8
8
MHz  
MHz  
(MCG_C2[RANGE]=01)  
fosc_hi_2 Oscillator crystal or resonator frequency — high  
frequency mode (high range)  
32  
(MCG_C2[RANGE]=1x)  
fec_extal Input clock frequency (external clock mode)  
tdc_extal Input clock duty cycle (external clock mode)  
50  
60  
MHz  
%
1, 2  
40  
50  
Table continues on the next page...  
24  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
 
Peripheral operating requirements and behaviors  
Table 16. Oscillator frequency specifications (continued)  
Symbol Description  
Min.  
Typ.  
Max.  
Unit  
Notes  
tcst Crystal startup time — 32 kHz low-frequency,  
1000  
ms  
3, 4  
low-power mode (HGO=0)  
Crystal startup time — 32 kHz low-frequency,  
high-gain mode (HGO=1)  
250  
0.6  
ms  
ms  
Crystal startup time — 8 MHz high-frequency  
(MCG_C2[RANGE]=01), low-power mode  
(HGO=0)  
Crystal startup time — 8 MHz high-frequency  
(MCG_C2[RANGE]=01), high-gain mode  
(HGO=1)  
1
ms  
1. Other frequency limits may apply when external clock is being used as a reference for the FLL.  
2. When transitioning from FEI or FBI to FBE mode, restrict the frequency of the input clock so that, when it is divided by  
FRDIV, it remains within the limits of the DCO input clock frequency.  
3. Proper PC board layout procedures must be followed to achieve specifications.  
4. Crystal startup time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S  
register being set.  
NOTE  
The 32 kHz oscillator works in low power mode by default  
and cannot be moved into high power/gain mode.  
3.4 Memories and memory interfaces  
3.4.1 Flash electrical specifications  
This section describes the electrical characteristics of the flash memory module.  
3.4.1.1 Flash timing specifications — program and erase  
The following specifications represent the amount of time the internal charge pumps  
are active and do not include command overhead.  
Table 17. NVM program/erase timing specifications  
Symbol Description  
Min.  
Typ.  
7.5  
13  
Max.  
18  
Unit  
μs  
Notes  
thvpgm4 Longword Program high-voltage time  
thversscr Sector Erase high-voltage time  
113  
452  
ms  
ms  
1
1
thversall  
Erase All high-voltage time  
52  
1. Maximum time based on expectations at cycling end-of-life.  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
25  
Freescale Semiconductor, Inc.  
 
 
 
 
 
 
 
Peripheral operating requirements and behaviors  
3.4.1.2 Flash timing specifications — commands  
Table 18. Flash command timing specifications  
Symbol Description  
Min.  
Typ.  
Max.  
45  
Unit  
μs  
Notes  
tpgmchk  
trdrsrc  
tpgm4  
Program Check execution time  
1
1
Read Resource execution time  
Program Longword execution time  
Erase Flash Sector execution time  
Read 1s All Blocks execution time  
Read Once execution time  
30  
μs  
65  
14  
145  
114  
μs  
tersscr  
trd1all  
ms  
ms  
μs  
2
1
trdonce  
25  
tpgmonce Program Once execution time  
65  
μs  
tersall  
Erase All Blocks execution time  
ms  
μs  
2
1
tvfykey  
Verify Backdoor Access Key execution time  
30  
1. Assumes 25 MHz flash clock frequency.  
2. Maximum times for erase parameters based on expectations at cycling end-of-life.  
3.4.1.3 Flash high voltage current behaviors  
Table 19. Flash high voltage current behaviors  
Symbol  
Description  
Min.  
Typ.  
Max.  
Unit  
IDD_PGM  
Average current adder during high voltage  
flash programming operation  
2.5  
6.0  
mA  
IDD_ERS  
Average current adder during high voltage  
flash erase operation  
1.5  
4.0  
mA  
3.4.1.4 Reliability specifications  
Table 20. NVM reliability specifications  
Symbol Description  
Min.  
Program Flash  
Typ.1  
Max.  
Unit  
Notes  
tnvmretp10k Data retention after up to 10 K cycles  
tnvmretp1k Data retention after up to 1 K cycles  
nnvmcycp Cycling endurance  
5
50  
years  
years  
cycles  
20  
100  
50 K  
10 K  
2
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a  
constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in  
Engineering Bulletin EB619.  
2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ Tj ≤ 125 °C.  
26  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
 
 
ADC electrical specifications  
3.5 Security and integrity modules  
There are no specifications necessary for the device's security and integrity modules.  
3.6 Analog  
3.6.1 ADC electrical specifications  
3.6.1.1 16-bit ADC operating conditions  
Table 21. 16-bit ADC operating conditions  
Symbol Description  
VDDA Supply voltage  
ΔVDDA Supply voltage  
Conditions  
Min.  
1.71  
-100  
-100  
1.13  
Typ.1  
Max.  
3.6  
Unit  
V
Notes  
Absolute  
Delta to VDD (VDD – VDDA  
)
0
+100  
+100  
VDDA  
mV  
mV  
V
2
2
ΔVSSA  
Ground voltage Delta to VSS (VSS – VSSA  
)
0
VREFH  
ADC reference  
voltage high  
VDDA  
VREFL  
ADC reference  
voltage low  
VSSA  
VSSA  
VSSA  
V
VADIN  
CADIN  
Input voltage  
VREFL  
8
VREFH  
10  
V
Input  
• 16-bit mode  
pF  
capacitance  
• 8-bit / 10-bit / 12-bit  
modes  
4
5
RADIN  
RAS  
Input resistance  
2
5
5
kΩ  
kΩ  
Analog source  
resistance  
13-bit / 12-bit modes  
fADCK < 4 MHz  
3
fADCK  
fADCK  
Crate  
ADC conversion ≤ 13-bit mode  
clock frequency  
1.0  
2.0  
24.0  
12.0  
MHz  
MHz  
4
4
5
ADC conversion 16-bit mode  
clock frequency  
ADC conversion ≤ 13-bit modes  
rate  
No ADC hardware averaging  
20.000  
37.037  
1200  
Ksps  
Ksps  
Continuous conversions  
enabled, subsequent  
conversion time  
Crate  
ADC conversion 16-bit mode  
5
rate  
No ADC hardware averaging  
461.467  
Continuous conversions  
enabled, subsequent  
conversion time  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
27  
Freescale Semiconductor, Inc.  
 
 
ADC electrical specifications  
1. Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK = 1.0 MHz, unless otherwise stated. Typical values are for  
reference only, and are not tested in production.  
2. DC potential difference.  
3. This resistance is external to MCU. To achieve the best results, the analog source resistance must be kept as low as  
possible. The results in this data sheet were derived from a system that had < 8 Ω analog source resistance. The RAS  
CAS time constant should be kept to < 1 ns.  
/
4. To use the maximum ADC conversion clock frequency, CFG2[ADHSC] must be set and CFG1[ADLPC] must be clear.  
5. For guidelines and examples of conversion rate calculation, download the ADC calculator tool.  
SIMPLIFIED  
INPUT PIN EQUIVALENT  
ZADIN  
CIRCUIT  
SIMPLIFIED  
CHANNEL SELECT  
CIRCUIT  
Pad  
leakage  
due to  
input  
protection  
ZAS  
ADC SAR  
ENGINE  
RAS  
RADIN  
VADIN  
CAS  
VAS  
RADIN  
RADIN  
RADIN  
INPUT PIN  
INPUT PIN  
INPUT PIN  
CADIN  
Figure 7. ADC input impedance equivalency diagram  
3.6.1.2 16-bit ADC electrical characteristics  
Table 22. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA  
)
Symbol Description  
Conditions1.  
Min.  
0.215  
1.2  
Typ.2  
Max.  
1.7  
3.9  
6.1  
7.3  
9.5  
Unit  
Notes  
IDDA_ADC Supply current  
mA  
3
ADC  
asynchronous  
clock source  
• ADLPC = 1, ADHSC =  
0
2.4  
4.0  
5.2  
6.2  
tADACK = 1/  
fADACK  
2.4  
MHz  
MHz  
MHz  
MHz  
• ADLPC = 1, ADHSC =  
1
3.0  
fADACK  
4.4  
• ADLPC = 0, ADHSC =  
0
• ADLPC = 0, ADHSC =  
1
Sample Time  
See Reference Manual chapter for sample times  
Table continues on the next page...  
28  
Freescale Semiconductor, Inc.  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
 
 
 
 
 
ADC electrical specifications  
Table 22. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)  
Symbol Description  
Conditions1.  
Min.  
Typ.2  
Max.  
6.8  
Unit  
Notes  
TUE  
Total unadjusted  
error  
• 12-bit modes  
• <12-bit modes  
4
LSB4  
5
1.4  
2.1  
DNL  
Differential non-  
linearity  
• 12-bit modes  
0.7  
–1.1 to  
+1.9  
LSB4  
LSB4  
5
5
–0.3 to 0.5  
• <12-bit modes  
• 12-bit modes  
0.2  
1.0  
INL  
Integral non-  
linearity  
–2.7 to  
+1.9  
–0.7 to  
+0.5  
• <12-bit modes  
0.5  
EFS  
EQ  
Full-scale error  
• 12-bit modes  
• <12-bit modes  
• 16-bit modes  
• ≤13-bit modes  
–4  
–1.4  
–1 to 0  
–5.4  
–1.8  
LSB4  
LSB4  
VADIN  
VDDA  
=
5
Quantization  
error  
0.5  
ENOB  
Effective number 16-bit differential mode  
6
of bits  
• Avg = 32  
12.8  
11.9  
14.5  
13.8  
bits  
bits  
• Avg = 4  
16-bit single-ended mode  
• Avg = 32  
12.2  
11.4  
13.7  
13.1  
bits  
bits  
• Avg = 4  
Signal-to-noise  
plus distortion  
See ENOB  
SINAD  
THD  
6.02 × ENOB + 1.76  
dB  
Total harmonic  
distortion  
16-bit differential mode  
• Avg = 32  
7
7
–97  
–91  
dB  
dB  
16-bit single-ended mode  
• Avg = 32  
SFDR  
Spurious free  
dynamic range  
16-bit differential mode  
• Avg = 32  
82  
78  
100  
dB  
16-bit single-ended mode  
• Avg = 32  
92  
dB  
EIL  
Input leakage  
error  
IIn × RAS  
mV  
IIn =  
leakage  
current  
(refer to  
the MCU's  
voltage  
Table continues on the next page...  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
29  
Freescale Semiconductor, Inc.  
ADC electrical specifications  
Table 22. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)  
Symbol Description  
Conditions1.  
Min.  
Typ.2  
Max.  
Unit  
Notes  
and  
current  
operating  
ratings)  
Temp sensor  
slope  
Across the full temperature  
range of the device  
1.55  
706  
1.62  
716  
1.69  
726  
mV/°C  
mV  
8
VTEMP25 Temp sensor  
voltage  
25 °C  
8
1. All accuracy numbers assume the ADC is calibrated with VREFH = VDDA  
2. Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK = 2.0 MHz unless otherwise stated. Typical values are for  
reference only and are not tested in production.  
3. The ADC supply current depends on the ADC conversion clock speed, conversion rate and ADC_CFG1[ADLPC] (low  
power). For lowest power operation, ADC_CFG1[ADLPC] must be set, the ADC_CFG2[ADHSC] bit must be clear with 1  
MHz ADC conversion clock speed.  
4. 1 LSB = (VREFH - VREFL)/2N  
5. ADC conversion clock < 16 MHz, Max hardware averaging (AVGE = %1, AVGS = %11)  
6. Input data is 100 Hz sine wave. ADC conversion clock < 12 MHz.  
7. Input data is 1 kHz sine wave. ADC conversion clock < 12 MHz.  
8. ADC conversion clock < 3 MHz  
Figure 8. Typical ENOB vs. ADC_CLK for 16-bit differential mode  
30  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
 
 
 
 
 
ADC electrical specifications  
Figure 9. Typical ENOB vs. ADC_CLK for 16-bit single-ended mode  
3.6.2 CMP and 6-bit DAC electrical specifications  
Table 23. Comparator and 6-bit DAC electrical specifications  
Symbol  
VDD  
Description  
Min.  
1.71  
Typ.  
Max.  
3.6  
Unit  
V
Supply voltage  
IDDHS  
Supply current, high-speed mode (EN = 1, PMODE  
= 1)  
200  
μA  
IDDLS  
Supply current, low-speed mode (EN = 1, PMODE =  
0)  
20  
μA  
VAIN  
VAIO  
VH  
Analog input voltage  
VSS  
VDD  
20  
V
Analog input offset voltage  
Analog comparator hysteresis1  
• CR0[HYSTCTR] = 00  
• CR0[HYSTCTR] = 01  
• CR0[HYSTCTR] = 10  
• CR0[HYSTCTR] = 11  
mV  
5
mV  
mV  
mV  
mV  
10  
20  
30  
VCMPOh  
VCMPOl  
tDHS  
Output high  
Output low  
VDD – 0.5  
35  
0.5  
200  
V
V
Propagation delay, high-speed mode (EN = 1,  
PMODE = 1)  
20  
ns  
Table continues on the next page...  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
31  
Freescale Semiconductor, Inc.  
 
ADC electrical specifications  
Table 23. Comparator and 6-bit DAC electrical specifications (continued)  
Symbol  
Description  
Min.  
Typ.  
Max.  
Unit  
tDLS  
Propagation delay, low-speed mode (EN = 1,  
PMODE = 0)  
80  
100  
600  
ns  
Analog comparator initialization delay2  
6-bit DAC current adder (enabled)  
6-bit DAC integral non-linearity  
7
40  
μs  
μA  
LSB3  
IDAC6b  
INL  
–0.5  
–0.3  
0.5  
0.3  
DNL  
6-bit DAC differential non-linearity  
LSB  
1. Typical hysteresis is measured with input voltage range limited to 0.7 to VDD – 0.7 V.  
2. Comparator initialization delay is defined as the time between software writes to change control inputs (writes to  
DACEN, VRSEL, PSEL, MSEL, VOSEL) and the comparator output settling to a stable level.  
3. 1 LSB = Vreference/64  
HYSTCTR  
Setting  
Figure 10. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 0)  
HYSTCTR  
Setting  
Figure 11. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 1)  
32  
Freescale Semiconductor, Inc.  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
 
 
 
 
ADC electrical specifications  
3.6.3 12-bit DAC electrical characteristics  
3.6.3.1 12-bit DAC operating requirements  
Table 24. 12-bit DAC operating requirements  
Symbol  
VDDA  
VDACR  
TA  
Desciption  
Min.  
1.71  
1.13  
Max.  
3.6  
Unit  
V
Notes  
Supply voltage  
Reference voltage  
Temperature  
3.6  
V
1
Operating temperature  
range of the device  
°C  
CL  
IL  
Output load capacitance  
Output load current  
100  
1
pF  
2
mA  
1. The DAC reference can be selected to be VDDA or the voltage output of the VREF module (VREF_OUT)  
2. A small load capacitance (47 pF) can improve the bandwidth performance of the DAC  
3.6.3.2 12-bit DAC operating behaviors  
Table 25. 12-bit DAC operating behaviors  
Symbol Description  
Min.  
Typ.  
Max.  
Unit  
Notes  
IDDA_DACL Supply current — low-power mode  
150  
μA  
P
IDDA_DACH Supply current — high-speed mode  
100  
15  
1
700  
200  
30  
μA  
μs  
μs  
μs  
P
tDACLP Full-scale settling time (0x080 to 0xF7F) —  
low-power mode  
1
1
1
1
tDACHP Full-scale settling time (0x080 to 0xF7F) —  
high-power mode  
tCCDACLP Code-to-code settling time (0xBF8 to  
0xC08)—high-speed mode  
—low-power mode  
5
μs  
Vdacoutl DAC output voltage range low — high-  
speed mode, no load, DAC set to 0x000  
100  
mV  
Vdacouth DAC output voltage range high — high-  
speed mode, no load, DAC set to 0xFFF  
VDACR  
−100  
VDACR  
mV  
LSB  
LSB  
LSB  
INL  
DNL  
DNL  
Integral non-linearity error — high speed  
mode  
8
1
1
2
3
4
Differential non-linearity error — VDACR > 2  
V
Differential non-linearity error — VDACR  
VREF_OUT  
=
VOFFSET Offset error  
EG Gain error  
PSRR Power supply rejection ratio, VDDA ≥ 2.4 V  
TCO Temperature coefficient offset voltage  
60  
0.4  
0.1  
0.8  
0.6  
90  
%FSR  
%FSR  
dB  
5
5
3.7  
μV/C  
6
Table continues on the next page...  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
33  
Freescale Semiconductor, Inc.  
 
 
ADC electrical specifications  
Table 25. 12-bit DAC operating behaviors (continued)  
Symbol Description  
Min.  
Typ.  
0.000421  
Max.  
Unit  
%FSR/C  
Ω
Notes  
TGE  
Rop  
SR  
Temperature coefficient gain error  
Output resistance (load = 3 kΩ)  
Slew rate -80hF7Fh80h  
250  
V/μs  
• High power (SPHP  
)
1.2  
1.7  
• Low power (SPLP  
3dB bandwidth  
)
0.05  
0.12  
BW  
kHz  
• High power (SPHP  
• Low power (SPLP  
)
550  
40  
)
1. Settling within 1 LSB  
2. The INL is measured for 0 + 100 mV to VDACR −100 mV  
3. The DNL is measured for 0 + 100 mV to VDACR −100 mV  
4. The DNL is measured for 0 + 100 mV to VDACR −100 mV with VDDA > 2.4 V  
5. Calculated by a best fit curve from VSS + 100 mV to VDACR − 100 mV  
6. VDDA = 3.0 V, reference select set for VDDA (DACx_CO:DACRFS = 1), high power mode (DACx_C0:LPEN = 0), DAC set  
to 0x800, temperature range is across the full range of the device  
34  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
 
 
 
ADC electrical specifications  
Figure 12. Typical INL error vs. digital code  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
35  
Freescale Semiconductor, Inc.  
ADC electrical specifications  
Figure 13. Offset at half scale vs. temperature  
3.7 Timers  
See General switching specifications.  
3.8 Communication interfaces  
36  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
ADC electrical specifications  
3.8.1 DSPI switching specifications (limited voltage range)  
The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with  
master and slave operations. Many of the transfer attributes are programmable. The  
tables below provide DSPI timing characteristics for classic SPI timing modes. Refer  
to the DSPI chapter of the Reference Manual for information on the modified transfer  
formats used for communicating with slower peripheral devices.  
Table 26. Master mode DSPI timing (limited voltage range)  
Num  
Description  
Min.  
2.7  
Max.  
3.6  
25  
Unit  
V
Notes  
Operating voltage  
Frequency of operation  
MHz  
ns  
DS1  
DS2  
DS3  
DSPI_SCK output cycle time  
DSPI_SCK output high/low time  
DSPI_PCSn valid to DSPI_SCK delay  
2 x tBUS  
(tSCK/2) − 2 (tSCK/2) + 2  
ns  
(tBUS x 2) −  
2
ns  
1
2
DS4  
DSPI_SCK to DSPI_PCSn invalid delay  
(tBUS x 2) −  
2
ns  
DS5  
DS6  
DS7  
DS8  
DSPI_SCK to DSPI_SOUT valid  
DSPI_SCK to DSPI_SOUT invalid  
DSPI_SIN to DSPI_SCK input setup  
DSPI_SCK to DSPI_SIN input hold  
−2  
17  
0
8.5  
ns  
ns  
ns  
ns  
1. The delay is programmable in SPIx_CTARn[PSSCK] and SPIx_CTARn[CSSCK].  
2. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC].  
DSPI_PCSn  
DS1  
DS3  
DS2  
DS4  
DSPI_SCK  
(CPOL=0)  
DS8  
DS7  
Data  
Last data  
First data  
DSPI_SIN  
DS5  
DS6  
First data  
Data  
Last data  
DSPI_SOUT  
Figure 14. DSPI classic SPI timing — master mode  
Table 27. Slave mode DSPI timing (limited voltage range)  
Num  
Description  
Min.  
Max.  
3.6  
Unit  
V
Operating voltage  
2.7  
Frequency of operation  
12.5  
MHz  
Table continues on the next page...  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
37  
Freescale Semiconductor, Inc.  
 
 
ADC electrical specifications  
Table 27. Slave mode DSPI timing (limited voltage range) (continued)  
Num  
DS9  
Description  
DSPI_SCK input cycle time  
Min.  
Max.  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
4 x tBUS  
DS10  
DS11  
DS12  
DS13  
DS14  
DS15  
DS16  
DSPI_SCK input high/low time  
(tSCK/2) − 2  
(tSCK/2) + 2  
DSPI_SCK to DSPI_SOUT valid  
0
21  
15  
15  
DSPI_SCK to DSPI_SOUT invalid  
DSPI_SIN to DSPI_SCK input setup  
DSPI_SCK to DSPI_SIN input hold  
DSPI_SS active to DSPI_SOUT driven  
DSPI_SS inactive to DSPI_SOUT not driven  
2
7
DSPI_SS  
DS10  
DS9  
DSPI_SCK  
(CPOL=0)  
DS15  
DS12  
DS16  
DS11  
First data  
DS14  
Last data  
DSPI_SOUT  
Data  
Data  
DS13  
First data  
Last data  
DSPI_SIN  
Figure 15. DSPI classic SPI timing — slave mode  
3.8.2 DSPI switching specifications (full voltage range)  
The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with  
master and slave operations. Many of the transfer attributes are programmable. The  
tables below provides DSPI timing characteristics for classic SPI timing modes. Refer  
to the DSPI chapter of the Reference Manual for information on the modified transfer  
formats used for communicating with slower peripheral devices.  
Table 28. Master mode DSPI timing (full voltage range)  
Num  
Description  
Min.  
1.71  
Max.  
3.6  
Unit  
V
Notes  
Operating voltage  
1
Frequency of operation  
12.5  
MHz  
ns  
DS1  
DS2  
DSPI_SCK output cycle time  
DSPI_SCK output high/low time  
4 x tBUS  
(tSCK/2) - 4 (tSCK/2) + 4  
Table continues on the next page...  
ns  
38  
Freescale Semiconductor, Inc.  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
 
ADC electrical specifications  
Table 28. Master mode DSPI timing (full voltage range) (continued)  
Num  
Description  
Min.  
Max.  
Unit  
Notes  
DS3  
DSPI_PCSn valid to DSPI_SCK delay  
(tBUS x 2) −  
4
ns  
2
DS4  
DSPI_SCK to DSPI_PCSn invalid delay  
(tBUS x 2) −  
4
ns  
3
DS5  
DS6  
DS7  
DS8  
DSPI_SCK to DSPI_SOUT valid  
DSPI_SCK to DSPI_SOUT invalid  
DSPI_SIN to DSPI_SCK input setup  
DSPI_SCK to DSPI_SIN input hold  
–7.8  
24  
10  
ns  
ns  
ns  
ns  
0
1. The DSPI module can operate across the entire operating voltage for the processor, but to run across the full voltage  
range the maximum frequency of operation is reduced.  
2. The delay is programmable in SPIx_CTARn[PSSCK] and SPIx_CTARn[CSSCK].  
3. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC].  
DSPI_PCSn  
DS1  
DS3  
DS2  
DS4  
DSPI_SCK  
(CPOL=0)  
DS8  
DS7  
Data  
Last data  
First data  
DSPI_SIN  
DS5  
DS6  
First data  
Data  
Last data  
DSPI_SOUT  
Figure 16. DSPI classic SPI timing — master mode  
Table 29. Slave mode DSPI timing (full voltage range)  
Num  
Description  
Min.  
Max.  
Unit  
V
Operating voltage  
1.71  
3.6  
Frequency of operation  
6.25  
MHz  
ns  
DS9  
DSPI_SCK input cycle time  
8 x tBUS  
DS10  
DS11  
DS12  
DS13  
DS14  
DS15  
DS16  
DSPI_SCK input high/low time  
(tSCK/2) - 4  
(tSCK/2) + 4  
ns  
DSPI_SCK to DSPI_SOUT valid  
DSPI_SCK to DSPI_SOUT invalid  
DSPI_SIN to DSPI_SCK input setup  
DSPI_SCK to DSPI_SIN input hold  
DSPI_SS active to DSPI_SOUT driven  
DSPI_SS inactive to DSPI_SOUT not driven  
0
27.5  
ns  
ns  
2.5  
7
ns  
ns  
22  
22  
ns  
ns  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
39  
Freescale Semiconductor, Inc.  
 
 
 
Dimensions  
DSPI_SS  
DS10  
DS9  
DSPI_SCK  
(CPOL=0)  
DS15  
DS12  
DS16  
DS11  
First data  
DS14  
Last data  
DSPI_SOUT  
Data  
Data  
DS13  
First data  
Last data  
DSPI_SIN  
Figure 17. DSPI classic SPI timing — slave mode  
3.8.3 I2C  
See General switching specifications.  
3.8.4 UART  
See General switching specifications.  
4 Dimensions  
4.1 Obtaining package dimensions  
Package dimensions are provided in package drawings.  
To find a package drawing, go to www.freescale.com and perform a keyword search for  
the drawing’s document number:  
If you want the drawing for this package  
32-pin QFN  
Then use this document number  
98ASA00473D  
32-pin LQFP  
48-pin LQFP  
98ASH70029A  
98ASH00962A  
40  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
 
Pinout  
5 Pinout  
5.1 Signal Multiplexing and Pin Assignments  
The following table shows the signals available on each pin and the locations of these  
pins on the devices supported by this document. The Port Control Module is  
responsible for selecting which ALT functionality is available on each pin.  
NOTE  
• PTB0, PTB1, PTC3, PTC4, PTD4, PTD5, PTD6, PTD7  
are high current pins.  
• PTC6 and PTC7 have open drain outputs  
48  
32  
32  
Pin Name  
Default  
ALT0  
ALT1  
ALT2  
ALT3  
ALT4  
ALT5  
ALT6  
ALT7  
LQFP  
QFN  
LQFP  
1
2
3
1
2
3
1
2
3
VDD  
VDD  
VDD  
VSS  
VSS  
VSS  
PTE16  
ADC0_SE1/  
ADC0_DP1/  
ADC1_SE0  
ADC0_SE1/  
ADC0_DP1/  
ADC1_SE0  
PTE16  
SPI0_PCS0/  
SS_b  
UART1_TX  
UART1_RX  
FTM_CLKIN0  
FTM_CLKIN1  
I2C0_SDA  
FTM0_FLT3  
4
5
6
4
5
6
4
5
6
PTE17  
PTE18  
PTE19  
ADC0_SE5/  
ADC0_DM1/  
ADC1_SE5  
ADC0_SE5/  
ADC0_DM1/  
ADC1_SE5  
PTE17  
PTE18  
PTE19  
SPI0_SCK  
SPI0_SOUT  
SPI0_SIN  
LPTMR0_  
ALT3  
ADC0_SE6/  
ADC1_SE1/  
ADC1_DP1  
ADC0_SE6/  
ADC1_SE1/  
ADC1_DP1  
UART1_CTS_  
b
SPI0_SIN  
ADC0_SE7/  
ADC1_SE7/  
ADC1_DM1  
ADC0_SE7/  
ADC1_SE7/  
ADC1_DM1  
UART1_RTS_  
b
I2C0_SCL  
SPI0_SOUT  
7
8
PTE20  
PTE21  
ADC0_SE0/  
ADC0_DP0  
ADC0_SE0/  
ADC0_DP0  
PTE20  
PTE21  
FTM1_CH0  
FTM1_CH1  
UART0_TX  
UART0_RX  
ADC0_SE4/  
ADC0_DM0  
ADC0_SE4/  
ADC0_DM0  
9
7
7
7
7
VDDA  
VREFH  
VREFL  
VSSA  
VDDA  
VREFH  
VREFL  
VSSA  
VDDA  
VREFH  
VREFL  
VSSA  
10  
11  
12  
13  
8
8
8
8
PTE29  
CMP1_IN5/  
CMP0_IN5  
CMP1_IN5/  
CMP0_IN5  
PTE29  
PTE30  
FTM0_CH2  
FTM0_CH3  
FTM_CLKIN0  
FTM_CLKIN1  
14  
9
9
PTE30  
ADC1_SE4/  
CMP0_IN4/  
CMP1_IN4/  
DAC0_OUT  
ADC1_SE4/  
CMP0_IN4/  
CMP1_IN4/  
DAC0_OUT  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
41  
Freescale Semiconductor, Inc.  
 
 
Pinout  
48  
32  
32  
Pin Name  
Default  
ALT0  
ALT1  
ALT2  
ALT3  
ALT4  
ALT5  
ALT6  
ALT7  
LQFP  
QFN  
LQFP  
15  
16  
17  
10  
11  
12  
10  
11  
12  
PTE24  
DISABLED  
DISABLED  
SWD_CLK  
PTE24  
FTM0_CH0  
FTM0_CH1  
FTM0_CH5  
I2C0_SCL  
I2C0_SDA  
EWM_OUT_b  
EWM_IN  
PTE25  
PTA0  
PTE25  
PTA0  
UART0_CTS_  
b
SWD_CLK  
18  
19  
20  
21  
13  
14  
15  
16  
13  
14  
15  
16  
PTA1  
PTA2  
PTA3  
PTA4  
DISABLED  
DISABLED  
SWD_DIO  
NMI_b  
PTA1  
PTA2  
PTA3  
UART0_RX  
FTM2_CH0  
FTM2_CH1  
FTM0_CH0  
FTM0_CH1  
CMP0_OUT  
CMP1_OUT  
FTM2_FLT0  
FTM2_QD_  
PHA  
FTM1_CH1  
FTM1_CH0  
UART0_TX  
FTM2_QD_  
PHB  
UART0_RTS_  
b
EWM_OUT_b  
SWD_DIO  
NMI_b  
PTA4/  
FTM0_FLT3  
LLWU_P3  
22  
23  
24  
25  
17  
18  
17  
18  
VDD  
VDD  
VDD  
VSS  
VSS  
VSS  
PTA18  
PTA19  
EXTAL0  
XTAL0  
EXTAL0  
XTAL0  
PTA18  
PTA19  
FTM0_FLT2  
FTM1_FLT0  
FTM_CLKIN0  
FTM_CLKIN1  
FTM0_FLT0  
LPTMR0_  
ALT1  
26  
27  
19  
20  
19  
20  
PTA20  
PTB0  
RESET_b  
PTA20  
RESET_b  
ADC0_SE8/  
ADC1_SE8  
ADC0_SE8/  
ADC1_SE8  
PTB0/  
LLWU_P5  
I2C0_SCL  
I2C0_SDA  
I2C0_SCL  
FTM1_CH0  
FTM1_CH1  
FTM1_QD_  
PHA  
UART0_RX  
28  
29  
21  
21  
PTB1  
PTB2  
ADC0_SE9/  
ADC1_SE9  
ADC0_SE9/  
ADC1_SE9  
PTB1  
PTB2  
FTM0_FLT2  
FTM0_FLT1  
EWM_IN  
FTM1_QD_  
PHB  
UART0_TX  
ADC0_SE10/  
ADC1_SE10/  
ADC1_DM2  
ADC0_SE10/  
ADC1_SE10/  
ADC1_DM2  
UART0_RTS_  
b
FTM0_FLT3  
30  
PTB3  
ADC1_SE2/  
ADC1_DP2  
ADC1_SE2/  
ADC1_DP2  
PTB3  
I2C0_SDA  
UART0_CTS_  
b
FTM0_FLT0  
31  
32  
33  
PTB16  
PTB17  
PTC0  
DISABLED  
DISABLED  
ADC1_SE11  
PTB16  
PTB17  
PTC0  
UART0_RX  
UART0_TX  
FTM_CLKIN2  
FTM_CLKIN1  
EWM_IN  
EWM_OUT_b  
FTM0_FLT0  
ADC1_SE11  
ADC1_SE3  
SPI0_PCS4  
SPI0_PCS3  
SPI0_PCS2  
SPI0_PCS1  
PDB0_EXTRG  
CMP0_OUT  
FTM2_CH0  
FTM2_CH1  
CLKOUT  
SPI0_PCS0/  
SS_b  
34  
35  
36  
37  
38  
39  
40  
22  
23  
24  
25  
26  
27  
28  
22  
23  
24  
25  
26  
27  
28  
PTC1  
PTC2  
PTC3  
PTC4  
PTC5  
PTC6  
PTC7  
ADC1_SE3  
PTC1/  
LLWU_P6  
UART1_RTS_  
b
FTM0_CH0  
FTM0_CH1  
FTM0_CH2  
FTM0_CH3  
ADC0_SE11/  
CMP1_IN0  
ADC0_SE11/  
CMP1_IN0  
PTC2  
UART1_CTS_  
b
CMP1_IN1  
DISABLED  
DISABLED  
CMP0_IN0  
CMP0_IN1  
CMP1_IN1  
PTC3/  
LLWU_P7  
UART1_RX  
PTC4/  
LLWU_P8  
SPI0_PCS0/  
SS_b  
UART1_TX  
CMP1_OUT  
CMP0_OUT  
PTC5/  
LLWU_P9  
SPI0_SCK  
SPI0_SOUT  
SPI0_SIN  
LPTMR0_  
ALT2  
FTM0_CH2  
I2C0_SCL  
I2C0_SDA  
CMP0_IN0  
CMP0_IN1  
PTC6/  
LLWU_P10  
PDB0_EXTRG  
UART0_RX  
UART0_TX  
PTC7  
42  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
Pinout  
48  
LQFP  
32  
QFN  
32  
LQFP  
Pin Name  
Default  
DISABLED  
ADC0_SE2  
DISABLED  
ALT0  
ALT1  
ALT2  
ALT3  
ALT4  
FTM0_CH0  
FTM0_CH1  
FTM0_CH2  
ALT5  
UART1_RX  
UART1_TX  
ALT6  
ALT7  
41  
42  
43  
PTD0  
PTD0/  
LLWU_P12  
SPI0_PCS0/  
SS_b  
UART0_CTS_  
b
PTD1  
PTD2  
ADC0_SE2  
PTD1  
SPI0_SCK  
UART0_RTS_  
b
PTD2/  
SPI0_SOUT  
UART0_RX  
I2C0_SCL  
LLWU_P13  
44  
45  
PTD3  
PTD4  
DISABLED  
DISABLED  
PTD3  
SPI0_SIN  
UART0_TX  
FTM0_CH3  
FTM0_CH4  
I2C0_SDA  
29  
29  
PTD4/  
LLWU_P14  
SPI0_PCS1  
UART0_RTS_  
b
FTM2_CH0  
FTM2_CH1  
FTM1_CH0  
FTM1_CH1  
EWM_IN  
46  
47  
48  
30  
31  
32  
30  
31  
32  
PTD5  
PTD6  
PTD7  
ADC0_SE3  
ADC1_SE6  
DISABLED  
ADC0_SE3  
ADC1_SE6  
PTD5  
SPI0_PCS2  
SPI0_PCS3  
UART0_CTS_  
b
FTM0_CH5  
FTM0_CH0  
FTM0_CH1  
EWM_OUT_b  
FTM0_FLT0  
FTM0_FLT1  
PTD6/  
LLWU_P15  
UART0_RX  
PTD7  
UART0_TX  
5.2 KV10 Pinouts  
The following figure shows the pinout diagram for the devices supported by this  
document. Many signals may be multiplexed onto a single pin. To determine what  
signals can be used on which pin, see the previous section.  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
43  
Freescale Semiconductor, Inc.  
Preliminary  
 
Pinout  
PTC3  
PTC2  
PTC1  
PTC0  
PTB17  
PTB16  
PTB3  
PTB2  
PTB1  
PTB0  
PTA20  
PTA19  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
VDD  
VSS  
1
2
PTE16  
PTE17  
PTE18  
PTE19  
PTE20  
PTE21  
VDDA  
VREFH  
VREFL  
VSSA  
3
4
5
6
7
8
9
10  
11  
12  
Figure 18. 48 LQFP Pinout Diagram  
44  
Freescale Semiconductor, Inc.  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Pinout  
PTC3  
PTC2  
PTC1  
PTB1  
PTB0  
PTA20  
PTA19  
PTA18  
VDD  
VSS  
24  
23  
22  
21  
20  
19  
1
2
3
4
5
6
7
8
PTE16  
PTE17  
PTE18  
PTE19  
VDDA VREFH  
VREFL VSSA  
18  
17  
Figure 19. 32 QFN Pinout Diagram  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
45  
Freescale Semiconductor, Inc.  
Ordering parts  
PTC3  
PTC2  
PTC1  
PTB1  
PTB0  
PTA20  
PTA19  
PTA18  
VDD  
VSS  
24  
23  
22  
21  
20  
19  
1
2
3
4
5
6
7
8
PTE16  
PTE17  
PTE18  
PTE19  
VDDA VREFH  
VREFL VSSA  
18  
17  
Figure 20. 32 LQFP Pinout Diagram  
6 Ordering parts  
6.1 Determining valid orderable parts  
Valid orderable part numbers are provided on the web. To determine the orderable part  
numbers for this device, go to www.freescale.com and perform a part number search for  
the MKV10 device numbers.  
7 Part identification  
46  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
Part identification  
7.1 Description  
Part numbers for the chip have fields that identify the specific part. You can use the  
values of these fields to determine the specific part you have received.  
7.2 Format  
Part numbers for this device have the following format:  
Q KV## A FFF R T PP CC N  
7.3 Fields  
This table lists the possible values for each field in the part number (not all  
combinations are valid):  
Field  
Description  
Values  
Q
Qualification status  
• M = Fully qualified, general market flow  
• P = Prequalification  
KV##  
M
Kinetis family  
Key attribute  
• KV10  
• Z = M0+ core  
• 32 = 32 KB  
• V = –40 to 105  
FFF  
T
Program flash memory size  
Temperature range (°C)  
Package identifier  
PP  
• FK = 24 QFN (4 mm x 4 mm)  
• LC = 32 LQFP (7 mm x 7 mm)  
• FM = 32 QFN (5 mm x 5 mm)  
• LF = 48 LQFP (7 mm x 7 mm)  
• FT = 48 QFN (10 mm x 10 mm)  
• LH = 64 LQFP (10 mm x 10 mm)  
• LK = 80 LQFP (12 mm x 12 mm)  
• LL = 100 LQFP (14 mm x 14 mm)  
CCC  
N
Maximum CPU frequency (MHz)  
Packaging type  
• 7 = 75 MHz  
• R = Tape and reel  
• (Blank) = Trays  
7.4 Example  
This is an example part number:  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
47  
Freescale Semiconductor, Inc.  
 
 
 
 
Terminology and guidelines  
MKV10Z32VLF7  
8 Terminology and guidelines  
8.1 Definition: Operating requirement  
An operating requirement is a specified value or range of values for a technical  
characteristic that you must guarantee during operation to avoid incorrect operation and  
possibly decreasing the useful life of the chip.  
8.1.1 Example  
This is an example of an operating requirement:  
Symbol  
Description  
Min.  
Max.  
Unit  
VDD  
1.0 V core supply  
voltage  
0.9  
1.1  
V
8.2 Definition: Operating behavior  
An operating behavior is a specified value or range of values for a technical  
characteristic that are guaranteed during operation if you meet the operating  
requirements and any other specified conditions.  
8.2.1 Example  
This is an example of an operating behavior:  
Symbol  
Description  
Min.  
Max.  
Unit  
IWP  
Digital I/O weak pullup/ 10  
pulldown current  
130  
µA  
48  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
 
 
Terminology and guidelines  
8.3 Definition: Attribute  
An attribute is a specified value or range of values for a technical characteristic that  
are guaranteed, regardless of whether you meet the operating requirements.  
8.3.1 Example  
This is an example of an attribute:  
Symbol  
Description  
Min.  
Max.  
Unit  
CIN_D  
Input capacitance:  
digital pins  
7
pF  
8.4 Definition: Rating  
A rating is a minimum or maximum value of a technical characteristic that, if  
exceeded, may cause permanent chip failure:  
Operating ratings apply during operation of the chip.  
Handling ratings apply when the chip is not powered.  
8.4.1 Example  
This is an example of an operating rating:  
Symbol  
Description  
Min.  
Max.  
Unit  
VDD  
1.0 V core supply  
voltage  
–0.3  
1.2  
V
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
49  
Freescale Semiconductor, Inc.  
 
 
Terminology and guidelines  
8.5 Result of exceeding a rating  
40  
30  
The likelihood of permanent chip failure increases rapidly as  
soon as a characteristic begins to exceed one of its operating ratings.  
20  
10  
0
Operating rating  
Measured characteristic  
8.6 Relationship between ratings and operating requirements  
Fatal range  
Degraded operating range  
Normal operating range  
Degraded operating range  
Fatal range  
Expected permanent failure  
- No permanent failure  
- Possible decreased life  
- Possible incorrect operation  
- No permanent failure  
- Correct operation  
- No permanent failure  
- Possible decreased life  
- Possible incorrect operation  
Expected permanent failure  
 
Operating (power on)  
Fatal range  
Handling range  
Fatal range  
Expected permanent failure  
No permanent failure  
Expected permanent failure  
∞  
Handling (power off)  
8.7 Guidelines for ratings and operating requirements  
Follow these guidelines for ratings and operating requirements:  
• Never exceed any of the chip’s ratings.  
• During normal operation, don’t exceed any of the chip’s operating requirements.  
• If you must exceed an operating requirement at times other than during normal  
operation (for example, during power sequencing), limit the duration as much as  
possible.  
50  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
Freescale Semiconductor, Inc.  
 
 
Terminology and guidelines  
8.8 Definition: Typical value  
A typical value is a specified value for a technical characteristic that:  
• Lies within the range of values specified by the operating behavior  
• Given the typical manufacturing process, is representative of that characteristic  
during operation when you meet the typical-value conditions or other specified  
conditions  
Typical values are provided as design guidelines and are neither tested nor guaranteed.  
8.8.1 Example 1  
This is an example of an operating behavior that includes a typical value:  
Symbol  
Description  
Min.  
Typ.  
Max.  
Unit  
IWP  
Digital I/O weak  
pullup/pulldown  
current  
10  
70  
130  
µA  
8.8.2 Example 2  
This is an example of a chart that shows typical values for various voltage and  
temperature conditions:  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
51  
Freescale Semiconductor, Inc.  
Preliminary  
 
Revision history  
5000  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
TJ  
150 °C  
105 °C  
25 °C  
–40 °C  
0
0.90  
0.95  
1.00  
1.05  
1.10  
VDD (V)  
8.9 Typical Value Conditions  
Typical values assume you meet the following conditions (or other conditions as  
specified):  
Symbol  
Description  
Ambient temperature  
3.3 V supply voltage  
Value  
Unit  
TA  
25  
°C  
V
VDD  
3.3  
9 Revision history  
The following table provides a revision history for this document.  
Table 30. Revision history  
Rev. No.  
Date  
Substantial Changes  
3
02/2014  
Initial public release  
52  
Freescale Semiconductor, Inc.  
Kinetis V Series KV10, 32/16 KB Flash, Rev3, 02/2014.  
Preliminary  
 
 
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Document Number KV10P48M75  
Revision 3, 02/2014  
Preliminary  

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