BZX84-C4V7TRL [NXP]
Zener Diode, 4.7V V(Z), 5%, 0.35W, Silicon, Unidirectional;
| 型号： | BZX84-C4V7TRL |
| 厂家： | 
NXP |
| 描述： | Zener Diode, 4.7V V(Z), 5%, 0.35W, Silicon, Unidirectional 稳压二极管 |
| 文件： | 总11页 (文件大小：629K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BZX84 series
Voltage regulator diodes
Product data sheet
2003 Apr 10
Supersedes data of 1999 May 18
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX84 series
FEATURES
PINNING
• Total power dissipation: max. 250 mW
PIN
1
DESCRIPTION
• Three tolerance series: ±1%, ±2% and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
anode
2
not connected
cathode
• Non-repetitive peak reverse power dissipation:
max. 40 W.
3
APPLICATIONS
• General regulation functions.
handbook, age
2
1
DESCRIPTION
2
n.c.
Low-power voltage regulator diodes in small SOT23
plastic SMD packages.
1
The diodes are available in the normalized E24 ±1%
(BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C)
tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V.
3
3
Top view
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
2003 Apr 10
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX84 series
MARKING
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
Marking codes for BZX84-A2V4 to BZX84-A75
BZX84-A2V4 Y50 or ∗50 BZX84-A6V2
BZX84-A2V7 Y51 or ∗51 BZX84-A6V8
BZX84-A3V0 Y52 or ∗52 BZX84-A7V5
Y60 or ∗60 BZX84-A16
Y61 or ∗61 BZX84-A18
Y62 or ∗62 BZX84-A20
Y63 or ∗63 BZX84-A22
Y64 or ∗64 BZX84-A24
Y65 or ∗65 BZX84-A27
Y66 or ∗04 BZX84-A30
Y67 or ∗67 BZX84-A33
Y68 or ∗C0 BZX84-A36
Y69 or ∗69 BZX84-A39
Y70
Y71
BZX84-A43 Y80 or ∗C5
BZX84-A47 Y81
Y72 or ∗C2 BZX84-A51 Y82 or ∗C6
BZX84-A3V3
Y53
BZX84-A8V2
Y73
Y74
BZX84-A56
BZX84-A62
Y83
Y84
Y85
BZX84-A3V6 Y54 or ∗C1 BZX84-A9V1
BZX84-A3V9 Y55 or ∗55 BZX84-A10
BZX84-A4V3 Y56 or ∗56 BZX84-A11
BZX84-A4V7 Y57 or ∗57 BZX84-A12
BZX84-A5V1 Y58 or ∗58 BZX84-A13
BZX84-A5V6 Y59 or ∗59 BZX84-A15
Y75 or ∗75 BZX84-A68
Y76
BZX84-A75 Y86 or ∗86
Y77
−
−
−
−
−
−
Y78 or ∗C3
Y79 or ∗C4
Marking codes for BZX84-B2V4 to BZX84-B75
BZX84-B2V4 Z50 or ∗Z0 BZX84-B6V2
BZX84-B2V7 Z51 or ∗Z1 BZX84-B6V8
BZX84-B3V0 Z52 or ∗S1 BZX84-B7V5
BZX84-B3V3 Z53 or ∗S2 BZX84-B8V2
BZX84-B3V6 Z54 or ∗S3 BZX84-B9V1
BZX84-B3V9 Z55 or ∗S4 BZX84-B10
BZX84-B4V3 Z56 or ∗S7 BZX84-B11
BZX84-B4V7 Z57 or ∗S8 BZX84-B12
BZX84-B5V1 Z58 or ∗R1 BZX84-B13
BZX84-B5V6 Z59 or ∗R2 BZX84-B15
Z60 or ∗R5 BZX84-B16
Z61 or ∗R6 BZX84-B18
Z62 or ∗R8 BZX84-B20
Z63 or ∗R9 BZX84-B22
Z64 or ∗T1 BZX84-B24
Z65 or ∗66 BZX84-B27
Z66 or ∗Z6 BZX84-B30
Z67 or ∗Z7 BZX84-B33
Z68 or ∗Z8 BZX84-B36
Z69 or ∗Z9 BZX84-B39
Z70 or ∗70 BZX84-B43 Z80 or ∗S5
Z71 or ∗71 BZX84-B47 Z81 or ∗S6
Z72 or ∗72 BZX84-B51 Z82 or ∗S9
Z73 or ∗73 BZX84-B56 Z83 or ∗R0
Z74 or ∗74 BZX84-B62 Z84 or ∗R3
Z75 or ∗Z5 BZX84-B68 Z85 or ∗R4
Z76 or ∗Z4 BZX84-B75 Z86 or ∗R7
Z77 or ∗Y1
Z78 or ∗Y2
Z79 or ∗S0
−
−
−
−
−
−
Marking codes for BZX84-C2V4 to BZX84-C75
BZX84-C2V4 Z11 or ∗T3 BZX84-C6V2
BZX84-C2V7 Z12 or ∗T4 BZX84-C6V8
BZX84-C3V0 Z13 or ∗T9 BZX84-C7V5
BZX84-C3V3 Z14 or ∗B1 BZX84-C8V2
BZX84-C3V6 Z15 or ∗B2 BZX84-C9V1
BZX84-C3V9 Z16 or ∗B3 BZX84-C10
BZX84-C4V3 Z17 or ∗B6 BZX84-C11
Z4∗
Z5∗
Z6∗
Z7∗
Z8∗
Z9∗
Y1∗
Y2∗
Y3∗
Y4∗
BZX84-C16
BZX84-C18
BZX84-C20
BZX84-C22
BZX84-C24
BZX84-C27
BZX84-C30
BZX84-C33
BZX84-C36
BZX84-C39
Y5∗
Y6∗
Y7∗
Y8∗
Y9∗
BZX84-C43 Y15 or ∗B4
BZX84-C47 Y16 or ∗B5
BZX84-C51 Y17 or ∗B7
BZX84-C56 Y18 or ∗B8
BZX84-C62 Y19 or ∗B9
Y10 or ∗T2 BZX84-C68 Y20 or ∗B0
Y11 or ∗T5 BZX84-C75 Y21 or ∗A1
BZX84-C4V7
BZX84-C5V1
BZX84-C5V6
Z1∗
Z2∗
Z3∗
BZX84-C12
BZX84-C13
BZX84-C15
Y12 or ∗T6
Y13 or ∗T7
Y14 or ∗T8
−
−
−
−
−
−
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
2003 Apr 10
3
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX84 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
IF
PARAMETER
CONDITIONS
MIN.
MAX.
200
UNIT
mA
continuous forward current
−
IZSM
non-repetitive peak reverse current tp = 100 μs; square wave;
Tj = 25 °C prior to surge
see Tables
1 and 2
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
−
250
40
mW
W
PZSM
non-repetitive peak reverse power tp = 100 μs; square wave;
dissipation
Tj = 25 °C prior to surge; see Fig.2
Tstg
Tj
storage temperature
junction temperature
−65
−65
+150
+150
°C
°C
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX84-A and B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.3
0.9
V
IR
reverse current
BZX84-A/B/C2V4
BZX84-A/B/C2V7
BZX84-A/B/C3V0
BZX84-A/B/C3V3
BZX84-A/B/C3V6
BZX84-A/B/C3V9
BZX84-A/B/C4V3
BZX84-A/B/C4V7
BZX84-A/B/C5V1
BZX84-A/B/C5V6
BZX84-A/B/C6V2
BZX84-A/B/C6V8
BZX84-A/B/C7V5
BZX84-A/B/C8V2
BZX84-A/B/C9V1
BZX84-A/B/C10
BZX84-A/B/C11
BZX84-A/B/C12
BZX84-A/B/C13
BZX84-A/B/C15 to 75
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
50
20
10
5
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
2003 Apr 10
4
Table 1 Per type BZX84-A/B/C2V4 to A/B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL
RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 4 and 5)
DIODE CAP. NON-REPETITIVE
Cd (pF)
at f = 1 MHz;
VR = 0 V
PEAK REVERSE
CURRENT
BZX84-
Axxx
Bxxx
Cxxx
at IZtest = 5 mA
IZSM (A)
Tol. approx.
±5% (C)
at
at
at tp = 100 μs;
Tamb = 25 °C
Tol. ±1% (A)
Tol. ±2% (B)
IZtest = 1 mA IZtest = 5 mA
MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
2V4
2.37
2.67
2.97
3.26
3.56
3.86
4.25
4.65
5.04
5.54
6.13
6.73
7.42
8.11
9.00
9.90
2.43
2.73
3.03
3.34
3.64
3.94
4.35
4.75
5.16
5.66
6.27
6.87
7.58
8.29
9.20
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
2.6
275
300
325
350
375
400
410
425
400
80
600
600
600
600
600
600
600
500
480
400
150
80
70
75
80
85
85
85
80
50
40
15
6
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
−3.5 −1.6
−3.5 −2.0
−3.5 −2.1
−3.5 −2.4
−3.5 −2.4
−3.5 −2.5
−3.5 −2.5
0
0
0
0
0
0
0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
6.0
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.9
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
3.2
3.5
3.8
4.1
4.6
5.0
−3.5 −1.4 0.2
−2.7 −0.8 1.2
5.4
6.0
−2.0 1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
6.6
40
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
7.2
30
6
7.9
30
80
6
8.7
40
80
6
9.6
40
100
150
150
150
170
200
200
225
225
250
250
6
10.10 9.80
10.20 9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
50
8
11
10.80 11.11 10.80 11.20 10.4
11.88 12.12 11.80 12.20 11.4
12.87 13.13 12.70 13.30 12.4
14.85 15.15 14.70 15.30 13.8
15.84 16.16 15.70 16.30 15.3
17.82 18.18 17.60 18.40 16.8
19.80 20.20 19.60 20.40 18.8
21.78 22.22 21.60 22.40 20.8
23.76 24.24 23.50 24.50 22.8
50
10
10
10
10
10
10
15
20
25
85
12
50
10.0 85
11.0 80
13.0 75
13
50
15
50
16
50
10.4 12.4 14.0 75
12.4 14.4 16.0 70
14.4 16.4 18.0 60
16.4 18.4 20.0 60
18.4 20.4 22.0 55
18
50
20
60
22
60
24
60
Table 2 Per type BZX84-A/B/C27 to A/B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL
RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 4 and 5)
DIODE CAP. NON-REPETITIVE
Cd (pF)
at f = 1 MHz;
VR = 0 V
PEAK REVERSE
CURRENT
BZX84-
Axxx
Bxxx
Cxxx
at IZtest = 2 mA
IZSM (A)
Tol. approx.
±5% (C)
at
at
at tp = 100 μs;
Tamb = 25 °C
Tol. ±1% (A)
Tol. ±2% (B)
IZtest = 0.5 mA IZtest = 2 mA
MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
27
26.73 27.27 26.50 27.50 25.1
29.70 30.30 29.40 30.60 28.0
32.67 33.33 32.30 33.70 31.0
35.64 36.36 35.30 36.70 34.0
38.61 39.39 38.20 39.80 37.0
42.57 43.43 42.10 43.90 40.0
46.53 47.47 46.10 47.90 44.0
50.49 51.51 50.00 52.00 48.0
55.44 56.56 54.90 57.10 52.0
61.38 62.62 60.80 63.20 58.0
67.32 68.68 66.60 69.40 64.0
74.25 75.75 73.50 76.50 70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
65
300
300
325
350
350
375
375
400
425
450
475
500
25
30
35
35
40
45
50
60
70
80
90
95
80
21.4 23.4 25.3 50
1.0
30
33
36
39
43
47
51
56
62
68
75
70
80
24.4 26.6 29.4 50
27.4 29.7 33.4 45
30.4 33.0 37.4 45
33.4 36.4 41.2 45
37.6 41.2 46.6 40
42.0 46.1 51.8 40
46.6 51.0 57.2 40
52.2 57.0 63.8 40
58.8 64.4 71.6 35
65.6 71.7 79.8 35
73.4 80.2 88.6 35
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
75
80
80
90
80
130
150
170
180
200
215
240
255
85
85
90
100
120
150
170
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX84 series
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
VALUE
330
UNIT
K/W
K/W
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Rth j-a
500
Note
1. Device mounted on an FR4 printed circuit-board.
2003 Apr 10
7
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX84 series
GRAPHICAL DATA
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
200
10
(1)
10
100
(2)
0
0.6
1
10
0.8
1
−1
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.3 Forward current as a function of forward
voltage; typical values.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
S
Z
(mV/K)
S
Z
11
4V3
(mV/K)
10
9V1
−1
5
3V9
8V2
7V5
6V8
3V6
6V2
5V6
5V1
−2
−3
0
3V3
4V7
3V0
2V4
2V7
−5
0
20
40
60
0
4
8
12
16
20
I
(mA)
Z
I
(mA)
Z
BZX84-A/B/C2V4 to A/B/C4V3.
BZX84-A/B/C4V7 to A/B/C12.
Tj = 25 to 150 °C.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of
working current; typical values.
Fig.5 Temperature coefficient as a function of
working current; typical values.
2003 Apr 10
8
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX84 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Apr 10
9
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX84 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
2003 Apr 10
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp11
Date of release: 2003 Apr 10
Document order number: 9397 750 10959
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