BZX79-C47 [NXP]
Voltage regulator diodes; 稳压二极管型号: | BZX79-C47 |
厂家: | NXP |
描述: | Voltage regulator diodes |
文件: | 总12页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZX79 series
Voltage regulator diodes
Product specification
2002 Feb 27
Supersedes data of 1999 May 25
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
FEATURES
• Total power dissipation: max. 500 mW
• Two tolerance series: ±2%, and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
max. 40 W.
handbook, halfpage
k
a
APPLICATIONS
MAM239
• Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24 ±2% (BZX79-B) and
approx. ±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
250
see Tables 1 and 2 A
UNIT
IF
continuous forward current
−
mA
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
Ptot
total power dissipation
Tamb = 50 °C; note 1
−
−
−
400
500
40
mW
Tamb = 50 °C; note 2
mW
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.3
Tstg
Tj
storage temperature
junction temperature
−65
−65
+200
+200
°C
°C
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA; see Fig.4
MAX.
UNIT
VF
0.9
V
2002 Feb 27
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
SYMBOL
PARAMETER
reverse current
CONDITIONS
MAX.
UNIT
IR
BZX79-B/C2V4
BZX79-B/C2V7
BZX79-B/C3V0
BZX79-B/C3V3
BZX79-B/C3V6
BZX79-B/C3V9
BZX79-B/C4V3
BZX79-B/C4V7
BZX79-B/C5V1
BZX79-B/C5V6
BZX79-B/C6V2
BZX79-B/C6V8
BZX79-B/C7V5
BZX79-B/C8V2
BZX79-B/C9V1
BZX79-B/C10
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
50
µA
20
10
5
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
BZX79-B/C11
BZX79-B/C12
BZX79-B/C13
BZX79-B/C15 to BZX79-B/C75
VR = 0.7VZnom
2002 Feb 27
3
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
SZ (mV/K)
DIODE CAP.
Cd (pF)
NON-REPETITIVE PEAK
REVERSE CURRENT
rdif (Ω)
at IZtest = 5 mA
at IZtest = 5 mA
(see Figs 5 and 6)
at f = 1 MHz;
VR = 0 V
IZSM (A)
at tp = 100 µs; Tamb = 25 °C
BZX79-
Bxxx
Cxxx
Tol. approx.
Tol. ±2% (B)
at IZtest = 1 mA at IZtest = 5 mA
±5% (C)
MIN. MAX. MIN. MAX.
TYP.
275
MAX.
600
TYP.
70
MAX. MIN.
TYP. MAX.
MAX.
MAX.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
2.6
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2.9
300
325
350
375
400
410
425
400
80
600
600
600
600
600
600
500
480
400
150
80
75
80
85
85
85
80
50
40
15
6
0
3.2
0
3.5
0
3.8
0
4.1
0
4.6
0
5.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
5.4
6.0
6.6
40
2.3
7.2
30
6
1.2
3.0
7.9
30
80
6
2.5
4.0
8.7
40
80
6
3.2
4.6
9.6
40
100
150
150
150
170
200
200
225
225
250
250
6
3.8
5.5
10.20 9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
50
8
4.5
6.4
11
10.80 11.20 10.4
11.80 12.20 11.4
12.70 13.30 12.4
14.70 15.30 13.8
15.70 16.30 15.3
17.60 18.40 16.8
19.60 20.40 18.8
21.60 22.40 20.8
23.50 24.50 22.8
50
10
10
10
10
10
10
15
20
25
5.4
7.4
85
12
50
6.0
8.4
85
13
50
7.0
9.4
80
15
50
9.2
11.4
12.4
14.4
15.6
17.6
19.6
75
16
50
10.4
12.4
12.3
14.1
15.9
75
18
50
70
20
60
60
22
60
60
24
60
55
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
Table 2 Per type, BZX79-B/C27 to BZX79-B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
SZ (mV/K)
DIODE CAP.
Cd (pF)
NON-REPETITIVE PEAK
REVERSE CURRENT
rdif (Ω)
at IZtest = 2 mA
at IZtest = 2 mA
(see Figs 5 and 6)
at f = 1 MHz;
VR = 0 V
IZSM (A)
at tp = 100 µs; Tamb = 25 °C
BZX79-
Bxxx
Cxxx
Tol. approx.
Tol. ±2% (B)
at IZtest = 0.5 mA at IZtest = 2 mA
±5% (C)
MIN. MAX. MIN. MAX.
TYP.
65
MAX.
300
TYP.
25
MAX. MIN.
TYP. MAX.
MAX.
MAX.
27
30
33
36
39
43
47
51
56
62
68
75
26.50 27.50 25.1
29.40 30.60 28.0
32.30 33.70 31.0
35.30 36.70 34.0
38.20 39.80 37.0
42.10 43.90 40.0
46.10 47.90 44.0
50.00 52.00 48.0
54.90 57.10 52.0
60.80 63.20 58.0
66.60 69.40 64.0
73.50 76.50 70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
80
18.0
20.6
23.3
26.0
28.7
31.4
35.0
38.6
42.2
58.8
65.6
73.4
22.7
25.7
28.7
31.8
34.8
38.8
42.9
46.9
52.0
64.4
71.7
80.2
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
50
50
45
45
45
40
40
40
40
35
35
35
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
70
300
325
350
350
375
375
400
425
450
475
500
30
35
35
40
45
50
60
70
80
90
95
80
75
80
80
90
80
130
150
170
180
200
215
240
255
85
85
90
100
120
150
170
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
300
UNIT
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 8 mm.
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
MBG930
3
10
δ = 1
R
th j-a
0.75
0.50
0.33
(K/W)
2
0.20
10
0.10
0.05
0.02
0.01
≤0.001
10
t
t
p
p
δ =
T
T
1
10
−1
2
3
4
5
1
10
10
10
10
10
t
(ms)
p
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
2002 Feb 27
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
10
200
(1)
10
100
(2)
1
10
0
0.6
−1
0.8
1.0
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.3 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.4 Typical forward current as a function of
forward voltage.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
S
Z
(mV/K)
S
Z
11
4V3
(mV/K)
10
9V1
−1
5
3V9
8V2
7V5
6V8
3V6
6V2
5V6
5V1
−2
0
3V3
4V7
3V0
2V4
2V7
−3
−5
0
20
40
60
0
4
8
12
16
20
I
(mA)
Z
I
(mA)
Z
BZX79-B/C4V7 to BZX79-B/C12.
BZX79-B/C2V4 to BZX79-B/C4V3.
Tj = 25 to 150 °C.
Tj = 25 to 150 °C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
Fig.6 Temperature coefficient as a function of
working current; typical values.
2002 Feb 27
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)
0
1
2 mm
G
D
L
b
1
UNIT
max.
min.
max.
max.
scale
mm
0.56
1.85
4.25
25.4
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
DO-35
EIAJ
97-06-09
SOD27
A24
SC-40
2002 Feb 27
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Feb 27
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
NOTES
2002 Feb 27
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
NOTES
2002 Feb 27
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp12
Date of release: 2002 Feb 27
Document order number: 9397 750 09387
相关型号:
BZX79-C47-D7
Zener Diode, 47V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, GLASS, DO-35, 2 PIN
VISHAY
BZX79-C47-D8
Zener Diode, 47V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, GLASS, DO-35, 2 PIN
VISHAY
BZX79-C47/A52A
47V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS, SC-40, 2 PIN
NXP
©2020 ICPDF网 联系我们和版权申明