BZV85-C9V1 [NXP]
Voltage regulator diodes; 稳压二极管型号: | BZV85-C9V1 |
厂家: | NXP |
描述: | Voltage regulator diodes |
文件: | 总8页 (文件大小:57K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BZV85 series
Voltage regulator diodes
1999 May 11
Product specification
Supersedes data of 1996 Apr 26
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV85 series
FEATURES
DESCRIPTION
• Total power dissipation:
max. 1.3 W
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx. ±5% tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
• Tolerance series: approx. ±5%
• Working voltage range:
nom. 3.6 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 60 W.
handbook, halfpage
k
a
MAM241
APPLICATIONS
The diodes are type branded.
• Stabilization purposes.
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
IF
PARAMETER
CONDITIONS
MIN.
MAX.
500
UNIT
mA
continuous forward current
−
IZSM
non-repetitive peak reverse current tp = 100 µs; square wave;
see Table
Tj = 25 °C prior to surge; see Fig.3 “Per type”
tp = 10 ms; half sinewave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 25 °C; lead length 10 mm;
−
1
W
note 1
note 2
−
−
1.3
60
W
W
PZSM
non-repetitive peak reverse power tp = 100 µs; square wave;
dissipation
Tj = 25 °C prior to surge
Tstg
Tj
storage temperature
junction temperature
−65
+200
200
°C
°C
−
Notes
1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead.
2. If the leads are kept at Ttp = 55 °C at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
IF = 50 mA; see Fig.4
1
V
1999 May 11
2
Per type
Tj = 25 °C unless otherwise specified.
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL TEMP. COEFF.
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
VR = 0 V
DIODE CAP.
Cd (pF)
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE
PEAK REVERSE CURRENT
IZSM
RESISTANCE
rdif (Ω)
SZ (mV/K)
at IZtest
at IZtest
at IZtest
see Figs 5 and 6
BZV85-
CXXX
at tp = 100 µs; at tp = 10 ms;
IR (µA)
VR
(V)
Tamb = 25 °C
Tamb = 25 °C
MIN. MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX. (A)
MAX. (mA)
3.4
3.7
3.8
4.1
15
15
13
13
10
7
−3.5
−3.5
−2.7
−2.0
−0.5
0
−1.0
−1.0
0
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
450
450
450
300
300
300
200
200
150
150
150
90
50
1.0
1.0
1.0
1.0
2.0
2.0
3.0
4.0
4.5
5.0
6.5
7.0
7.7
8.4
9.1
10.5
11.0
12.5
14.0
15.5
17
8.0
8.0
8.0
8.0
8.0
8.0
7.0
7.0
5.0
5.0
4.0
4.0
3.0
3.0
3.0
2.5
1.75
1.75
1.75
1.5
1.5
1.2
1.2
2000
1950
1850
1800
1750
1700
1620
1550
1500
1400
1340
1200
1100
1000
900
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
10
4.0
4.6
5
4.4
5.0
+0.7
+2.2
2.7
3
4.8
5.4
3
5.2
6.0
2
5.8
6.6
4
0.6
3.6
2
6.4
7.2
3.5
3
1.3
4.3
2
7.0
7.9
2.5
5.5
1
7.7
8.7
5
3.1
6.1
0.7
0.7
0.2
0.2
0.2
0.2
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
8.5
9.6
5
3.8
7.2
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
8
4.7
8.5
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
10
10
10
15
15
20
24
25
30
40
45
5.3
9.3
85
11
6.3
10.8
12.0
13.6
15.4
17.1
19.1
22.1
24.3
27.5
32.0
85
12
7.4
80
13
8.9
75
760
15
10.7
11.8
13.6
16.6
18.3
20.1
22.4
75
700
16
70
600
18
60
540
20
60
500
22
55
450
24
27
50
19
400
30
8
50
21
380
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL TEMP. COEFF.
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
VR = 0 V
DIODE CAP.
Cd (pF)
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE
PEAK REVERSE CURRENT
IZSM
RESISTANCE
rdif (Ω)
SZ (mV/K)
at IZtest
at IZtest
at IZtest
see Figs 5 and 6
BZV85-
CXXX
at tp = 100 µs; at tp = 10 ms;
IR (µA)
VR
(V)
Tamb = 25 °C
Tamb = 25 °C
MIN. MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX. (A)
MAX. (mA)
33
36
39
43
47
51
56
62
68
75
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
45
50
24.8
27.2
29.6
34.0
37.4
40.8
46.8
52.2
60.5
66.5
35.0
39.9
43.0
48.3
52.5
56.5
63.0
72.5
81.0
88.0
8
8
6
6
4
4
4
4
4
4
45
45
45
40
40
40
40
35
35
35
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
23
25
27
30
33
36
39
43
48
53
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.35
0.3
350
320
296
270
246
226
208
186
171
161
60
75
100
125
150
175
200
225
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV85 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
110
UNIT
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length 4 mm; see Fig.2
lead length10 mm; note 1
175
Note
1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead.
GRAPHICAL DATA
MBG929
3
10
R
th j-tp
(K/W)
δ = 1
2
10
0.75
0.50
0.33
0.20
0.10
0.05
10
0.02
0.01
0
t
t
p
p
δ =
T
T
1
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
1999 May 11
5
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV85 series
MBG802
MBG925
2
10
300
handbook, halfpage
handbook, halfpage
I
I
ZSM
(A)
F
(mA)
(1)
10
200
(1)
(2)
(2)
1
100
−1
10
0
0
2
0.5
1.0
1
10
V
(V)
10
V
(V)
Znom
F
(1) tp = 10 µs; half sinewave; Tamb = 25 °C.
(2) tp = 10 ms; half sinewave; Tamb = 25 °C.
(1) Tj = 200 °C.
(2) Tj = 25 °C.
Fig.3 Non-repetitive peak reverse current as a
function of the nominal working voltage.
Fig.4 Forward current as a function of forward
voltage; typical values.
MBG800
MBG926
100
10
handbook, halfpage
handbook, halfpage
S
Z
(1)
(mV/K)
S
Z
(mV/K)
80
10
(2)
(3)
9V1
5
8V2
7V5
6V8
60
40
6V2
5V6
5V1
0
4V7
4V3
20
0
3V6
3V9
−5
2
0
25
50
1
10
V
(V)
10
Znom
I
(mA)
Z
IZ = IZtest; Tj = 25 to 150 °C.
(1) Maximum values.
(2) Typical values.
BZV85-C3V6 to C10.
Tj = 25 to 150 °C.
For types above 7.5 V the temperature coefficient is independent
of current; see Table “Per type”.
(3) Minimum values.
Fig.5 Temperature coefficient as a function of
working current; typical values.
Fig.6 Temperature coefficient as a function of
nominal working voltage.
1999 May 11
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV85 series
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD66
(1)
k
a
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)
0
2
4 mm
G
D
L
b
1
UNIT
max.
min.
max.
max.
scale
mm
0.81
2.6
4.8
28
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
DO-41
EIAJ
97-06-20
SOD66
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 11
7
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© Philips Electronics N.V. 1999
SCA64
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Printed in The Netherlands
115002/00/02/pp8
Date of release: 1999 May 11
Document order number: 9397 750 05929
相关型号:
BZV85-C9V1T/R
DIODE 9.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode
NXP
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