BYV118-40 [NXP]

Rectifier diodes Schottky barrier; 整流二极管肖特基势垒


型号：	BYV118-40
厂家：	NXP
描述：	Rectifier diodes Schottky barrier 整流二极管肖特基势垒整流二极管
文件：	总6页 (文件大小：39K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

BYV118, BYV118B series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

V_R= 35 V/ 40 V/ 45 V

I_O(AV)= 10 A

V_F≤ 0.6 V

GENERAL DESCRIPTION

Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting

plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.

The BYV118 series is supplied in the SOT78 conventional leaded package.

The BYV118B series is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

DESCRIPTION

anode 1 (a)

cathode (k) ¹

tab

anode 2 (a)

cathode (k)

1 2 3

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

BYV118-

BYV118B-

V_RRM

V_RWM

Peak repetitive reverse

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

_mb≤ 108 ˚C

I_O(AV)

Average rectified forward

current (both diodes

conducting)

square wave; δ = 0.5;

T_mb≤ 127 ˚C

I_FRM

I_FSM

Repetitive peak forward

current (per diode)

square wave; δ = 0.5;

T_mb≤ 127 ˚C

Non-repetitive peak forward t = 10 ms

100

110

current per diode

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current per diode

Operating junction

temperature

150

175

˚C

T_stg

Storage temperature

- 65

1. It is not possible to make connection to pin 2 of the SOT404 pckage.

May 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

BYV118, BYV118B series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction per diode

4.5

K/W

to mounting base

both diodes

Thermal resistance junction SOT78 package in free air

to ambient

SOT404 package, pcb mounted, minimum

footprint, FR4 board

ELECTRICAL CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

I_R

Forward voltage per diode

I_F= 5 A; T_j= 125˚C

I_F= 10 A

0.52

0.6

0.72 0.87

Reverse current per diode

V_R= V_RWM

0.06

155

0.5

V_R= V_RWM; T_j= 100˚C

V_R= 5 V; f = 1 MHz, T_j= 25˚C to 125˚C

C_d

Junction capacitance per

diode

May 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

BYV118, BYV118B series

Tmb(max) / C

D = 1.0

PBYR645CT

Forward dissipation, PF (W)

PBYR1045CTD

0.5

Reverse current, IR (mA)

137.5

100

Vo = 0.43 V

Rs = 0.034 Ohms

132

125 C

100 C

0.2

146.5

141

0.1

75 C

D =

50 C

0.1

155.5

150

Tj = 25 C

0.01

Average forward current, IF(AV) (A)

Reverse voltage, VR (V)

Fig.1. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; square current waveform where

Fig.4. Typical reverse leakage current per diode;

I_R= f(V_R); parameter T_j

I_F(AV)=I_F(RMS)x √D.

Forward dissipation, PF (W)

PBYR1045CTD

Tmb(max) / C

a = 1.57

Cd / pF

PBYR645CT

137.5

1000

100

Vo = 0.43 V

Rs = 0.034 Ohms

132

1.9

2.2

2.8

146.5

141

155.5

150

100

Average forward current, IF(AV) (A)

VR / V

Fig.2. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; sinusoidal current waveform where a = form

Fig.5. Typical junction capacitance per diode;

C_d= f(V_R); f = 1 MHz; T_j= 25˚C to 125 ˚C.

factor = I_F(RMS)/ I_F(AV)

Transient thermal impedance, Zth j-mb (K/W)

BYV118

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

typ

max

0.1

t^p

t_p

D =

0.01

1us

10us 100us 1ms

10ms 100ms

BYV118

10s

0.2

0.4

0.6

0.8

1.2

1.4

Forward voltage, VF (V)

pulse width, tp (s)

Fig.3. Typical and maximum forward characteristic

I_F= f(V_F); parameter T_j

Fig.6. Transient thermal impedance; per diode;

Z_{th j-mb}= f(t_p).

May 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

BYV118, BYV118B series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

1 2 3

max

(2x)

0,9 max (3x)

0,6

2,4

2,54 2,54

Fig.7. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.

2. Epoxy meets UL94 V0 at 1/8".

May 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

BYV118, BYV118B series

MECHANICAL DATA

Dimensions in mm

Net Mass: 1.4 g

4.5 max

1.4 max

10.3 max

11 max

15.4

2.5

0.85 max

(x2)

0.5

2.54 (x2)

Fig.8. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

11.5

9.0

17.5

2.0

3.8

5.08

Fig.9. SOT404 : minimum pad sizes for surface mounting.

Notes

1. Plastic meets UL94 V0 at 1/8".

May 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

BYV118, BYV118B series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

May 1998

Rev 1.300

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