BY329-1000,127 [NXP]
Rectifier Diodes fast, soft-recovery - I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 8 A; t<sub>rr</sub>: 135 ns; V<sub>RRM</sub>: 1000 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack;型号: | BY329-1000,127 |
厂家: | NXP |
描述: | Rectifier Diodes fast, soft-recovery - I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 8 A; t<sub>rr</sub>: 135 ns; V<sub>RRM</sub>: 1000 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
文件: | 总6页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329 series
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 800 V/ 1000 V/ 1200 V
IF(AV) = 8 A
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
k
1
a
2
IFSM ≤ 75 A
trr ≤ 135 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Glass-passivated double diffused
rectifier diodes featuring low
forward voltage drop, fast reverse
recovery and soft recovery
characteristic. The devices are
intended for use in TV receivers,
monitors and switchedmode power
supplies.
PIN
DESCRIPTION
cathode
anode
cathode
tab
1
2
tab
1
2
The BY329 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
BY329
-800 -1000 -1200
VRSM
Peak non-repetitive reverse
-
800
1000 1200
V
voltage
VRRM
VRWM
Peak repetitive reverse voltage
Crest working reverse voltage
Average forward current1
-
-
800
600
1000 1200
800
8
V
V
1000
IF(AV)
square wave; δ = 0.5;
mb ≤ 122 ˚C
sinusoidal; a = 1.57;
mb ≤ 125 ˚C
-
-
A
A
T
7
T
IF(RMS)
IFRM
RMS forward current
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
-
11
16
A
A
T
mb ≤ 122 ˚C
IFSM
Non-repetitive peak forward
current.
t = 10 ms
-
-
75
82
A
A
t = 8.3 ms
sinusoidal; Tj = 150 ˚C prior
to surge; with reapplied
VRWM(max)
I2t
Tstg
Tj
I2t for fusing
Storage temperature
Operating junction temperature
t = 10 ms
-
-40
-
28
150
150
A2s
˚C
˚C
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to in free air.
ambient
-
-
2.0
K/W
Rth j-a
-
60
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
IR
Forward voltage
Reverse current
IF = 20 A
VR = VRWM; Tj = 125 ˚C
-
-
1.5
0.1
1.85
1.0
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
trr
Reverse recovery time
IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs
IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs
-
-
-
100
0.5
50
135
0.7
60
ns
µC
A/µs
Qs
Reverse recovery charge
dIR/dt
Maximum slope of the reverse IF = 2 A; -dIF/dt = 20 A/µs
recovery current
September 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329 series
IFS (RMS) / A
dI
100
90
80
70
60
50
40
30
20
10
0
I
F
F
dt
IFSM
trr
time
Qs
100%
25%
I
I
R
rrm
1ms
10ms
0.1s
1s
10s
tp / s
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Maximum non-repetitive rms forward current.
IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior
to surge with reapplied VRWM
.
IF / A
Tmb(max) / C
PF / W
30
20
10
0
20
15
10
5
110
120
D = 1.0
Vo = 1.25 V
Rs = 0.03 Ohms
Tj = 150 C
Tj = 25 C
0.5
0.2
130
140
150
0.1
t
T
p
t
p
I
D =
typ
max
t
T
0
1.5
0
0.5
1
2
0
2
4
6
IF(AV) / A
8
10
12
VF / V
Fig.2. Maximum forward dissipation, PF = f(IF(AV));
square wave current waveform; parameter D = duty
cycle = tp/T.
Fig.5. Typical and maximum forward characteristic;
IF = f(VF); parameter Tj
Qs / uC
Tmb(max) / C
a = 1.57
PF / W
10
15
10
5
120
130
Tj = 150 C
Tj = 25 C
Vo = 1.25 V
Rs = 0.03 Ohms
IF = 10 A
10 A
1.9
2.2
2 A
2.8
1 A
2 A
4
1
1 A
140
150
0.1
0
10
-dIF/dt (A/us)
1
100
0
2
4
6
8
IF(AV) / A
Fig.3. Maximum forward dissipation, PF = f(IF(AV));
sinusoidal current waveform; parameter a = form
Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
factor = IF(RMS)/IF(AV)
.
September 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329 series
Transient thermal impedance, Zth j-mb (K/W)
trr / ns
1000
10
1
IF = 10 A
10A
1 A
1A
0.1
100
p
t
p
t
P
0.01
D
D =
T
Tj = 150 C
Tj = 25 C
t
T
0.001
10
1
1us
10us 100us 1ms
10ms 100ms
1s
10s
10
-dIF/dt (A/us)
100
pulse width, tp (s)
Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C
and 150˚C
Fig.9. Transient thermal impedance Zth = f(tp)
B
Cd / pF
100
10
1
10
1000
1
100
VR / V
Fig.8. Typical junction capacitance Cd at f = 1 MHz;
Tj = 25˚C
September 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
(2x)
1
2
0,9 max (2x)
0,6
2,4
5,08
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
6
Rev 1.200
相关型号:
BY329-1200,127
Rectifier Diodes fast, soft-recovery - I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 8 A; t<sub>rr</sub>: 135 ns; V<sub>RRM</sub>: 1200 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack
NXP
©2020 ICPDF网 联系我们和版权申明