BUT18AF [NXP]
Silicon diffused power transistors; 扩散硅功率晶体管
| 型号： | BUT18AF |
| 厂家： | 
NXP |
| 描述： | Silicon diffused power transistors |
| 文件： | 总12页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT18F; BUT18AF
Silicon diffused power transistors
1999 Jun 11
Product specification
Supersedes data of 1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
DESCRIPTION
PINNING
PIN
High-voltage, high-speed,
DESCRIPTION
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
1
2
base
collector
emitter
3
mb
mounting base; electrically isolated from all pins
APPLICATIONS
• Converters
• Inverters
andbook, halfpage
• Switching regulators
• Motor control systems.
2
1
3
MBB008
1
2 3
MBK109
Fig.1 Simplified outline (SOT186) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-emitter peak voltage
CONDITIONS
MAX.
UNIT
VCESM
VBE = 0
BUT18F
850
V
V
BUT18AF
1000
VCEO
collector-emitter voltage
BUT18F
open base
see Fig.7
400
450
1.5
4
V
BUT18AF
V
VCEsat
ICsat
IC
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
A
see Fig.4
see Fig.4
6
A
ICM
Ptot
tf
12
33
0.8
A
Th ≤ 25 °C; see Fig.2
W
µs
resistive load; see Figs 10 and 11
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-h
thermal resistance from junction to external heatsink note 1
note 2
6.15
3.65
K/W
K/W
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
1999 Jun 11
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter peak voltage
BUT18F
VBE = 0
−
−
850
V
V
BUT18AF
1000
VCEO
collector-emitter voltage
BUT18F
open base
−
−
−
−
−
−
−
−
−
400
450
4
V
V
A
A
A
A
A
W
W
BUT18AF
ICsat
IC
ICM
IB
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
see Fig.4
see Fig.4
6
12
3
IBM
Ptot
6
Th ≤ 25 °C; see Fig.2; note 1
Th ≤ 25 °C; see Fig.2; note 2
20
33
+150
150
Tstg
Tj
storage temperature
junction temperature
−65
°C
°C
−
Notes
1. Without heatsink compound.
2. With heatsink compound.
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
VisolM
Cisol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
−
1500
V
12
−
pF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VCEOsust
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0;
L = 25 mH; see Figs 3 and 6
BUT18F
400
450
−
−
−
−
−
−
−
V
BUT18AF
−
V
VCEsat
VBEsat
ICES
collector-emitter saturation voltage IC = 4 A; IB = 800 mA; see Fig.7
1.5
1.3
1
V
base-emitter saturation voltage
collector-emitter cut-off current
IC = 4 A; IB = 800 mA; see Fig.8
−
V
VCE = VCESMmax; VBE = 0;
note 1
−
mA
V
CE = VCESMmax; VBE = 0;
−
−
−
−
2
mA
mA
Tj = 125 °C; note 1
IEBO
emitter-base cut-off current
VEB = 9 V; IC = 0
10
1999 Jun 11
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
SYMBOL
hFE
PARAMETER
DC current gain
CONDITIONS
MIN.
10
TYP. MAX. UNIT
VCE = 5 V; IC = 10 mA;
see Fig.9
18
35
VCE = 5 V; IC = 1 A; see Fig.9
10
20
35
Switching times resistive load (see Figs 10 and 11)
ton
ts
turn-on time
storage time
fall time
ICon = 4 A;
Bon = −IBoff = 800 mA
−
−
−
−
−
−
1
µs
µs
µs
I
ICon = 4 A;
IBon = −IBoff = 800 mA
4
tf
ICon = 4 A;
0.8
IBon = −IBoff = 800 mA
Switching times inductive load (see Figs 10 and 13)
ts
tf
storage time
fall time
ICon = 4 A; IBon = 800 mA
ICon = 4 A; IBon = 800 mA
−
−
1.6
2.5
µs
150
400
ns
Note
1. Measured with a half-sinewave voltage (curve tracer).
MGK674
120
handbook, halfpage
handbook, halfpage
P
tot max
(%)
+ 50 V
100 to 200 Ω
L
80
horizontal
oscilloscope
vertical
40
300 Ω
1 Ω
6 V
30 to 60 Hz
MGE252
0
0
50
100
150
o
T
( C)
h
Fig.3 Test circuit for collector-emitter
sustaining voltage.
Fig.2 Power derating curve.
1999 Jun 11
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
MGB922
2
10
I
C
(A)
I
CM max
10
I
C max
II
1
I
−1
10
DC
−2
10
BUT18F
BUT18AF
−3
10
−4
10
2
3
4
1
10
10
10
10
V
(V)
CE
Mounted without heatsink compound and 30 ±5 N force on centre of package.
Tmb < 25 °C
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.4 Forward bias SOAR.
5
1999 Jun 11
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
MGB866
10
Z
th j−mb
(K/W)
δ = 1
0.75
1
0.50
0.33
0.20
0.10
−1
10
0.05
0.02
0.01
−2
10
0
−3
10
−4
−3
−2
−1
2
10
10
10
10
1
10
10
t
(s)
p
Fig.5 Transient thermal impedance.
MGB884
2
handbook, halfpage
(1)
(2)
(3)
V
CEsat
(V)
MGE239
I
handbook, halfpage
C
(mA)
250
1
200
100
0
0
10
V
(V)
−2
−1
CE
10
1
10
min
I
(A)
B
V
CEOsust
Tj = 25 °C.
(1) IC = 1 A.
(2) C = 2 A.
(3) IC = 4 A.
I
Fig.6 Oscilloscope display for collector-emitter
sustaining voltage.
Fig.7 Collector-emitter saturation voltage as a
function of base current.
1999 Jun 11
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
MGB880
1.5
handbook, halfpage
MBC097
2
10
handbook, halfpage
V
BEsat
(V)
h
FE
(1)
V
= 5 V
1V
CE
(2)
1
(3)
10
0.5
10
−2
−1
10
1
10
I
(A)
B
1
10
−2
−1
2
10
1
10
10
Tj = 25 °C.
I
(A)
C
(1) IC = 4 A.
(2)
IC = 2 A.
(3) IC = 1 A.
VCE = 5 V; Tj = 25 °C.
Fig.8 Base-emitter saturation voltage as a
function of base current.
Fig.9 DC current gain; typical values.
MBB731
handbook, halfpage
t ≤30 ns
r
I
B on
90%
10%
I
B
V
handbook, halfpage
CC
t
I
I
B off
R
L
V
R
IM
0
B
C on
D.U.T.
90%
10%
t
p
I
C
MGE244
T
t
t
f
t
on
t
s
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
tr ≤ 20 ns.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.11 Switching times waveforms with
resistive load.
Fig.10 Test circuit resistive load.
1999 Jun 11
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
handbook, halfpage
90%
t
r
I
B on
I
B
10%
t
V
C
handbook, halfpage
CC
−I
B off
L
I
V
C on
+I
CL
B
90%
L
B
D.U.T.
−V
BE
I
C
MGE246
10%
t
t
f
t
s
t
MGE238
off
VCL = 300 V; VCC = 30 V; VBE = −5 V; LB = 1 µH; LC = 200 µH.
Fig.13 Switching time waveforms with
inductive load.
Fig.12 Test circuit inductive load.
1999 Jun 11
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
PACKAGE OUTLINE
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs
SOT186
E
E
1
A
P
m
A
1
q
D
1
D
L
1
Q
b
1
L
L
2
1
2
3
b
c
w
M
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
b
c
D
D
1
E
E
e
e
L
L
1
m
P
Q
q
w
b
UNIT
mm
L
2
1
1
1
1
1.5
1.3
14.3
13.5
4.8
4.0
1.4
1.2
4.4
4.0
2.9
2.5
0.9
0.7
4.4
4.0
0.55 17.0
0.38 16.4
7.9 10.2
7.5 9.6
5.7
5.3
0.9
0.5
3.2
3.0
5.08
2.54
10
0.4
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-06-11
SOT186
TO-220
1999 Jun 11
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 11
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
NOTES
1999 Jun 11
11
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© Philips Electronics N.V. 1999
SCA66
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Printed in The Netherlands
135002/02/pp12
Date of release: 1999 Jun 11
Document order number: 9397 750 06093
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