BUK553-100B [NXP]
PowerMOS transistor Logic level FET; 功率MOS晶体管逻辑电平场效应管
| 型号： | BUK553-100B |
| 厂家： | 
NXP |
| 描述： | PowerMOS transistor Logic level FET |
| 文件： | 总7页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK553-100A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
transistor in a plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
BUK553
-100A
100
13
75
175
0.18
-100B
100
12
75
175
0.22
VDS
ID
Drain-source voltage
Drain current (DC)
V
A
W
˚C
Ω
Ptot
Tj
Total power dissipation
Junction temperature
Drain-source on-state
RDS(ON)
resistance;
VGS = 5 V
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
d
tab
gate
2
drain
g
3
source
tab drain
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
Drain-source voltage
-
-
-
-
-
100
100
15
V
V
V
V
VDGR
±VGS
±VGSM
Drain-gate voltage
RGS = 20 kΩ
Gate-source voltage
Non-repetitive gate-source voltage tp ≤ 50 µs
-
20
-100A
13
-100B
ID
Drain current (DC)
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
-
-
-
12
8.5
48
A
A
A
ID
Drain current (DC)
9
IDM
Drain current (pulse peak value)
52
Ptot
Tstg
Tj
Total power dissipation
Storage temperature
Junction Temperature
Tmb = 25 ˚C
-
-
-
- 55
-
75
175
175
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance junction to
-
-
2.0
K/W
mounting base
Rth j-a
Thermal resistance junction to
ambient
-
60
-
K/W
April 1993
1
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK553-100A/B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
100
-
-
V
VGS(TO)
Gate threshold voltage
VDS = VGS; ID = 1 mA
1.0
1.5
1
0.1
10
0.17
0.20
2.0
10
1.0
100
0.18
0.22
V
µA
mA
nA
Ω
IDSS
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj =125 ˚C
Gate source leakage current
Drain-source on-state
resistance
-
-
-
-
-
IDSS
IGSS
VGS = ±15 V; VDS = 0 V
RDS(ON)
VGS = 5 V;
ID = 6.5 A
BUK553-100A
BUK553-100B
Ω
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
gfs
Forward transconductance
VDS = 25 V; ID = 6.5 A
6.0
8.0
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
-
-
620
180
90
825
250
120
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 Ω;
Rgen = 50 Ω
-
-
-
-
10
45
90
40
20
60
115
55
ns
ns
ns
ns
Ld
Ld
Ls
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
-
-
3.5
4.5
7.5
-
-
-
nH
nH
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IDR
Continuous reverse drain
-
-
-
13
A
current
IDRM
VSD
Pulsed reverse drain current
Diode forward voltage
-
-
-
-
52
1.5
A
V
IF = 13 A ; VGS = 0 V
1.2
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 13 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 30 V
-
-
90
0.6
-
-
ns
µC
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 13 A ; VDD ≤ 50 V ;
VGS = 5 V ; RGS = 50 Ω
-
-
70
mJ
April 1993
2
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK553-100A/B
Normalised Power Derating
PD%
120
Zth j-mb / (K/W)
1E+01
1E+00
1E-01
1E-02
110
100
90
80
70
60
50
40
30
20
10
0
0.5
0.2
0.1
0.05
t
p
t
P
0.02
p
D =
D
T
0
t
T
0
20
40
60
80
Tmb /
100 120 140 160 180
C
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Tmb)
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
ID / A
5
120
110
100
90
80
70
60
50
40
30
20
10
0
10
24
20
16
12
8
7
VGS / V =
4
3
4
2
0
0
20
40
60
80
100 120 140 160 180
0
2
4
6
8
10
Tmb /
C
VDS / V
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
ID / A
VGS / V =
RDS(ON) / Ohm
100
0.5
0.4
0.3
0.2
0.1
0
A
B
2.5
3
4
3.5
tp = 10 us
4.5
5
10
100 us
1 ms
DC
10
10 ms
100 ms
1
0.1
1
100
0
4
8
12
16
ID / A
20
24
28
10
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
April 1993
3
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK553-100A/B
VGS(TO) / V
ID / A
15
Tj / C =
25
150
max.
2
1
0
typ.
10
5
min.
0
-60
-20
20
60
Tj /
100
140
180
0
2
4
6
8
C
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
SUB-THRESHOLD CONDUCTION
ID / A
gfs / S
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
10
9
8
7
6
5
4
3
2
1
0
2 %
98 %
typ
0
0.4
0.8
1.2
VGS / V
1.6
2
2.4
0
2
4
6
8
10 12 14 16 18 20
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
C / pF
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10000
1000
100
Ciss
Coss
Crss
10
-60
-20
20
60
Tj /
100
140
180
0
20
40
C
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 6.5 A; VGS = 5 V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
April 1993
4
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK553-100A/B
WDSS%
VGS / V
12
120
110
100
90
80
70
60
50
40
30
20
10
0
10
8
VDS / V =20
80
6
4
2
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10 12 14 16 18 20
QG / nC
Tmb /
C
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 13 A; parameter VDS
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 13 A
IF / A
30
20
10
0
VDD
+
L
VDS
-
VGS
Tj / C = 150
25
-ID/100
T.U.T.
0
R 01
RGS
shunt
0
1
2
VSDS / V
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 LID2 BVDSS/(BVDSS − VDD
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
)
April 1993
5
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK553-100A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.17. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
April 1993
6
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK553-100A/B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1993
7
Rev 1.100
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