BU508DX [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU508DX |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
700
8
15
45
1.0
-
2.0
-
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
-
A
Ptot
VCEsat
ICsat
VF
Ths ≤ 25 ˚C
-
W
V
IC = 4.5 A; IB = 1.6 A
f = 16kHz
-
4.5
1.6
0.7
A
IF = 4.5 A
V
tf
Fall time
ICsat = 4.5 A; f = 16kHz
µs
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
case
c
base
2
collector
emitter
b
3
case isolated
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
700
8
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
IB
Collector current peak value
Base current (DC)
-
15
A
-
4
6
45
150
150
A
IBM
Ptot
Tstg
Tj
Base current peak value
Total power dissipation
Storage temperature
-
-
A
Ths ≤ 25 ˚C
W
˚C
˚C
-65
-
Junction temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-hs
Rth j-a
Junction to heatsink
Junction to heatsink
Junction to ambient
without heatsink compound
with heatsink compound
in free air
-
-
3.7
2.8
-
K/W
K/W
K/W
35
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 1
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
VCEOsust
Emitter cut off current
VEB = 6.0 V; IC = 0 A
-
-
-
10
-
mA
V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
700
VCEsat
VBEsat
hFE
Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A
-
-
6
-
-
-
1.0
1.3
30
V
V
Base-emitter saturation voltage
DC current gain
IC = 4.5 A; IB = 1.6 A
IC = 100 mA; VCE = 5 V
IF = 4.5 A
13
1.6
VF
Diode forward voltage
2.0
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IC = 0.1 A;VCE = 5 V
VCB = 10 V
TYP. MAX. UNIT
fT
Transition frequency at f = 5 MHz
Collector capacitance at f = 1MHz
7
-
-
MHz
pF
CC
125
Switching times (16 kHz line
deflection circuit)
ICsat = 4.5 A;Lc 1 mH;Cfb = 4 nF
IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;
-IBM = 2.25 A
ts
tf
Turn-off storage time
Turn-off fall time
6.5
0.7
-
-
µs
µs
1 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
ICsat
+ 150 v nominal
adjust for ICsat
TRANSISTOR
IC
IB
DIODE
t
t
IBend
1mH
20us
26us
64us
D.U.T.
LB
IBend
-VBB
12nF
VCE
t
Fig.1. Switching times waveforms.
Fig.3. Switching times test circuit
ICsat
90 %
IC
IB
h
FE
100
10 %
tf
t
t
ts
IBend
10
1
0.1
1
10
- IBM
IC/A
Fig.2. Switching times definitions.
Fig.4. Typical DC current gain. hFE = f (IC)
parameter VCE
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
VCESAT/V
VCESAT / V
1
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
IC = 6A
IC = 4.5A
IC = 3A
0.1
0.1
1
10
0.1
1
10
IC / A
IB/A
Fig.5. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
Normalised Power Derating
VBESAT / V
PD%
120
1.4
1.2
1
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
IC = 6A
IC = 4.5A
IC = 3A
0.8
0
20
40
60
80
Ths /
100
120
140
0.6
0
1
2
3
4
C
IB / A
Fig.6. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
Fig.8. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Ths)
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
Zth K/W
0.5
IC / A
10
1
100
10
0.2
0.1
= 0.01
ICM max
IC max
0.05
tp =
0.1
0.02
10 us
II
t
p
t
p
P
0.01
D
D =
T
0
t
T
Ptot max
0.001
1.0E-07
1.0E-05
1E-03
1.0E-01
1.0E+1
1
t / s
100 us
1 ms
Fig.9. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
I
IC / A
0.1
0.01
100
10
10 ms
DC
= 0.01
ICM max
IC max
tp =
1000
1
100
10
10 us
VCE / V
II
Fig.11. Forward bias safe operating area. Ths = 25˚C
I
Region of permissible DC operation.
II Extension for repetitive pulse operation.
Ptot max
1
100 us
1 ms
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
I
0.1
0.01
10 ms
DC
1000
1
100
10
VCE / V
Fig.10. Forward bias safe operating area. Ths = 25˚C
I
Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
July 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
MECHANICAL DATA
Dimensions in mm
5.8 max
3.0
16.0 max
Net Mass: 5.88 g
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
4.5
18.1
min
1.1
0.4 M
2
3.3
0.95 max
5.45 5.45
Fig.12. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
7
Rev 1.200
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