BTA225C [NXP]
Three quadrant triacs high commutation;
| 型号： | BTA225C |
| 厂家： | 
NXP |
| 描述： | Three quadrant triacs high commutation |
| 文件： | 总4页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
BTA225 series C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacs in a plastic envelope intended
foruseincircuitswherehighstaticand
dynamic dV/dt and high dI/dt can
occur loads. These devices will
commutate the full rated rms current
at the maximum rated junction
temperature, without the aid of a
snubber.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
500C 600C 800C
BTA225-
VDRM
Repetitive peak off-state
voltages
500
600
800
V
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
25
25
190
25
190
A
A
190
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
tab
T2
T1
2
main terminal 2
gate
3
G
1 2 3
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
-600
UNIT
-500
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
6001
6001
V
A
IT(RMS)
ITSM
RMS on-state current
full sine wave;
25
Tmb ≤ 91 ˚C
Non-repetitive peak
on-state current
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
-
-
-
190
209
180
100
A
A
t = 16.7 ms
I2t
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
t = 10 ms
A2s
A/µs
dIT/dt
ITM = 30 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
IGM
-
-
-
-
2
5
5
A
V
W
W
VGM
PGM
PG(AV)
over any 20 ms
period
0.5
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997
1
Rev 1.000
Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
BTA225 series C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
full cycle
-
-
-
-
-
60
1.0
1.4
-
K/W
K/W
K/W
junction to mounting base half cycle
Rth j-a
Thermal resistance
junction to ambient
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
Gate trigger current2
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
2
2
2
18
21
34
35
35
35
mA
mA
mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
-
-
-
20
30
mA
mA
mA
mA
V
-
-
-
20
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
VD = 12 V; IGT = 0.1 A
IT = 30 A
-
-
15
-
1.3
0.7
0.4
0.1
1.55
1.5
-
VD = 12 V; IT = 0.1 A
-
0.25
-
V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
V
ID
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C
0.5
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
dIcom/dt
tgt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 25 A;
without snubber; gate open circuit
ITM = 30 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
1000
-
-
-
-
V/µs
A/ms
µs
-
-
14
2
2 Device does not trigger in the T2-, G+ quadrant.
October 1997
2
Rev 1.000
Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
BTA225 series C
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.1. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
3
Rev 1.000
Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
BTA225 series C
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
4
Rev 1.000
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