BTA202X-800E [NXP]
2 A Three-quadrant triacs high commutation; 2三象限三端双向可控硅整流高
| 型号： | BTA202X-800E |
| 厂家： | 
NXP |
| 描述： | 2 A Three-quadrant triacs high commutation |
| 文件： | 总12页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA202X series D and E
2 A Three-quadrant triacs high commutation
Rev. 01 — 7 February 2008
Product data sheet
1. Product profile
1.1 General description
Passivated high commutation triacs in a SOT186A ‘full pack’ plastic package. These triacs
balance the requirements of commutation performance and gate sensitivity. The
‘sensitive’ gate E series and ‘logic level’ D series are intended for interfacing with
low-power drivers, including microcontrollers.
1.2 Features
I Sensitive gate
I High immunity to dV/dt
I High isolation voltage
I Very high commutation performance
maximized at each gate sensitivity
1.3 Applications
I Motor control
I Solenoid driver
1.4 Quick reference data
I VDRM ≤ 600 V (BTA202X-600D)
I VDRM ≤ 600 V (BTA202X-600E)
I VDRM ≤ 800 V (BTA202X-800D)
I VDRM ≤ 800 V (BTA202X-800E)
I IT(RMS) ≤ 2 A
I IGT ≤ 5 mA (BTA202X-600D)
I IGT ≤ 10 mA (BTA202X-600E)
I IGT ≤ 5 mA (BTA202X-800D)
I IGT ≤ 10 mA (BTA202X-800E)
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
2. Pinning information
Table 1.
Pinning
Description
Pin
1
Simplified outline
Graphic symbol
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mb
T2
T1
G
2
3
sym051
mb
mounting base (isolated)
1
2 3
SOT186A (TO-220F)
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BTA202X-600D TO-220F
BTA202X-600E
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3-lead TO-220 ‘full pack’
BTA202X-800D
BTA202X-800E
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
600
800
2
Unit
V
[1]
VDRM
repetitive peak off-state voltage
BTA202X-600D; BTA202X-600E
BTA202X-800D; BTA202X-800E
-
V
IT(RMS)
ITSM
RMS on-state current
full sine wave; Th ≤ 110 °C; see
Figure 4 and 5
-
A
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
-
-
-
-
14
A
t = 16.7 ms
15.4
0.98
100
A
A2s
I2t
I2t for fusing
tp = 10 ms
dIT/dt
rate of rise of on-state current
ITM = 1.5 A; IG = 0.2 A;
A/µs
dIG/dt = 0.2 A/µs
IGM
peak gate current
peak gate power
-
-
2
5
A
PGM
W
BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
2 of 12
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
Table 3.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
PG(AV)
Tstg
Parameter
Conditions
Min
Max
0.5
Unit
W
average gate power
storage temperature
junction temperature
over any 20 ms period
-
−40
+150
125
°C
Tj
-
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
003aac112
3
conduction form
Ptot
(W)
α = 180°
angle
(degrees)
factor
a
120°
90°
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
60°
30°
2
1
0
0
0.4
0.8
1.2
1.6
2
IT(RMS) (A)
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
003aac110
20
ITSM
(A)
16
12
8
I
I
TSM
T
t
4
0
1/f
= 25 °C max
T
j(init)
1
10
102
103
number of cycles
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
3 of 12
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
003aac113
103
I
I
TSM
t
T
ITSM
(A)
t
p
T
= 25 °C max
j(init)
(1)
102
10
10-5
10-4
10-3
10-2
10-1
tp ( s)
tp ≤ 20 ms
(1) dIT/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values
003aac111
003aac109
10
IT(RMS)
(A)
3
IT(RMS)
(A)
8
6
4
2
2
1
0
0
10-2
10-1
1
10
-50
0
50
100
150
Th (°C)
surge duration (s)
f = 50 Hz; Th = 110 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of heatsink
temperature; maximum values
BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
4 of 12
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4.
Symbol
Rth(j-h)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to bidirectional; see
heatsink Figure 6
-
-
5.5
K/W
Rth(j-a)
thermal resistance from junction to in free air
ambient
-
55
-
K/W
001aah553
10
Z
th(j-h)
(K/W)
1
−1
10
10
P
t
t
p
−2
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
Th = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage from all three terminals to
external heatsink; f = 50 Hz to
-
-
2500
V
60 Hz; sinusoidal waveform;
RH ≤ 65 %; clean and dust free
Cisol
isolation capacitance from pin 2 to external heatsink;
f = 1 MHz
-
10
-
pF
BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
5 of 12
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
7. Static characteristics
Table 6.
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions
BTA202X-600D
BTA202X-800D
BTA202X-600E
BTA202X-800E
Unit
Min
Typ
Max
Min
Typ
Max
IGT
gate trigger current VD = 12 V; IT = 0.1 A;
see Figure 8
T2+ G+
0.25
0.25
0.25
-
-
-
5
5
5
0.5
0.5
0.5
-
-
-
10
10
10
mA
mA
mA
T2+ G−
T2− G−
IL
latching current
VD = 12 V; IGT = 0.1 A;
see Figure 10
T2+ G+
T2+ G−
T2− G−
-
-
-
-
-
-
-
-
5
10
5
-
-
-
-
-
-
-
-
12
20
12
12
mA
mA
mA
mA
IH
holding current
on-state voltage
VD = 12 V; IGT = 0.1 A;
see Figure 11
5
VT
IT = 3 A; see Figure 9
-
-
1.63
0.7
2
-
-
1.63
0.7
2
V
V
VGT
gate trigger voltage VD = 12 V; IT = 0.1 A;
see Figure 7
1.5
1.5
VD = 400 V; IT = 0.1 A;
Tj = 125 °C
0.2
-
0.3
0.1
-
0.2
-
0.3
0.1
-
V
ID
off-state current
VD = VDRM(max); Tj = 125 °C
0.5
0.5 mA
BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
6 of 12
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
8. Dynamic characteristics
Table 7.
Dynamic characteristics
Symbol Parameter
Conditions
BTA202X-600D
BTA202X-800D
BTA202X-600E
BTA202X-800E
Unit
Min
Typ Max Min
Typ Max
dVD/dt rate of rise of
VDM = 0.67 × VDRM(max); Tj = 125 °C;
-
350
-
-
-
-
-
500
-
-
-
-
V/µs
A/ms
A/ms
µs
off-state voltage exponential waveform; R(G-MT1) = 220 Ω
dIcom/dt rate of change of VDM = 400 V; Tj = 125 °C; IT(RMS) = 2 A;
1.0
1.2
-
-
-
2.0
2.3
-
-
-
commutating
current
dVcom/dt = 20 V/µs; gate open circuit
VDM = 400 V; Tj = 125 °C; IT(RMS) = 2 A;
dVcom/dt = 10 V/µs; gate open circuit
tgt
gate-controlled
turn-on time
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
2
2
001aab101
003aaa959
1.6
3
V
GT
I
GT
V
GT(25°C)
I
GT(25°C)
1.2
2
(1)
(2)
(3)
0.8
0.4
1
(3)
(2)
(1)
0
−50
−50
0
50
100
150
50
0
150
100
T (°C)
j
T (°C)
j
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
Fig 8. Normalized gate trigger current as a function
of junction temperature
BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
7 of 12
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
003aac108
001aab100
3
3
IT
I
L
(A)
I
L(25°C)
2
2
(1)
(2)
(3)
1
0
1
0
−50
0
1
2
3
0
50
100
150
V
T (V)
T (°C)
j
Vo = 0.9 V
Rs = 0.267 Ω
(1) Tj = 125°C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
001aab099
3
I
H
I
H(25°C)
2
1
0
−50
0
50
100
150
T (°C)
j
Fig 11. Normalized holding current as a function of junction temperature
9. Package information
Refer to mounting instructions for F-pack packages.
Epoxy meets UL94 V-0 at 3.175 mm.
BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
8 of 12
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
10. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
E
P
A
A
1
q
D
1
mounting
base
T
D
j
L
L
2
1
K
Q
b
b
1
L
2
1
2
3
b
c
w
M
e
e
1
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
(1)
(2)
L
A
A
b
c
D
D
1
E
e
e
1
j
K
L
L
P
Q
q
T
w
b
b
UNIT
mm
2
1
1
1
2
max.
1.1
0.9
1.4
1.0
2.7
1.7
0.6 14.4 3.30
0.4 13.5 2.79
2.6
2.3
4.6 2.9
4.0 2.5
0.9
0.7
3.0
2.6
0.7 15.8 6.5 10.3
0.4 15.2 6.3 9.7
3.2
3.0
3
5.08
2.54
2.5
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are 2.5 × 0.8 max. depth
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
02-04-09
06-02-14
SOT186A
3-lead TO-220F
Fig 12. Package outline SOT186A (3-lead TO-220F)
BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
9 of 12
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BTA202X_SER_D_E_1
20080207
Product data sheet
-
-
BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
10 of 12
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
11 of 12
BTA202X series D and E
NXP Semiconductors
2 A Three-quadrant triacs high commutation
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Isolation characteristics . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Package information . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 February 2008
Document identifier: BTA202X_SER_D_E_1
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