BT152B-800R/T3
更新时间：2024-09-18 14:21:08
品牌：NXP
描述：Silicon Controlled Rectifier, 20 A, 800 V, SCR, PLASTIC, SMD, D2PAK-3
概述
规格参数
数据手册BT152B-800R/T3 概述
Silicon Controlled Rectifier, 20 A, 800 V, SCR, PLASTIC, SMD, D2PAK-3 可控硅整流器
BT152B-800R/T3 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 零件包装代码： | D2PAK | 包装说明： | SMALL OUTLINE, R-PSSO-G2 |
| 针数： | 3 | Reach Compliance Code： | unknown |
| HTS代码： | 8541.30.00.80 | 风险等级： | 5.16 |
| 外壳连接： | ANODE | 标称电路换相断开时间： | 70 µs |
| 配置： | SINGLE | 关态电压最小值的临界上升速率： | 200 V/us |
| 最大直流栅极触发电流： | 32 mA | 最大直流栅极触发电压： | 1.5 V |
| 最大维持电流： | 60 mA | JESD-30 代码： | R-PSSO-G2 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 2 |
| 最高工作温度： | 125 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 250 | 认证状态： | Not Qualified |
| 最大均方根通态电流： | 20 A | 重复峰值关态漏电流最大值： | 1000 µA |
| 断态重复峰值电压： | 800 V | 重复峰值反向电压： | 800 V |
| 表面贴装： | YES | 端子面层： | TIN |
| 端子形式： | GULL WING | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | 40 | 触发设备类型： | SCR |
| Base Number Matches： | 1 |
BT152B-800R/T3 数据手册
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PDF下载Philips Semiconductors
Product specification
Thyristors
BT152B series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic
envelope suitable for surface
mounting, intended for use in
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BT152B- 400R 600R 800R
applications
bidirectional
requiring
blocking
high
VDRM
VRRM
IT(AV)
,
Repetitive peak off-state
450
650
800
V
voltage
voltages
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
13
20
200
13
20
200
13
20
200
A
A
A
IT(RMS)
ITSM
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
cathode
mb
a
k
2
anode
gate
3
2
mb anode
1
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
-400R -600R -800R
VDRM
Repetitive peak off-state
voltages
-
4501
6501
800
V
IT(AV)
IT(RMS)
ITSM
Average on-state current half sine wave; Tmb ≤ 103 ˚C
-
-
13
20
A
A
RMS on-state current
Non-repetitive peak
on-state current
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
-
-
-
200
220
200
200
A
A
t = 8.3 ms
t = 10 ms
ITM = 50 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
A/µs
IGM
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
5
5
5
20
0.5
150
125
A
V
V
W
W
˚C
˚C
VGM
VRGM
PGM
PG(AV)
Tstg
-
-
-
-
over any 20 ms period
-40
-
Tj
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT152B series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
-
-
1.1
K/W
Rth j-a
minimum footprint, FR4 board
-
55
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
IL
Gate trigger current
Latching current
Holding current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 40 A
-
3
32
80
mA
mA
mA
V
-
25
IH
-
-
15
60
VT
VGT
On-state voltage
Gate trigger voltage
1.4
0.6
0.4
0.2
1.75
1.5
-
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
-
0.25
-
V
V
mA
ID, IR
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
1.0
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform gate open circuit
VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs;
ITM = 40 A
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 50 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
200
300
-
-
-
V/µs
tgt
tq
-
-
2
µs
70
µs
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT152B series
ITSM / A
Ptot / W
25
Tmb(max) / C
a = 1.57
250
200
150
100
50
97.5
103
conduction form
I
TSM
time
I
angle
factor
a
4
T
degrees
30
60
20
15
10
5
T
1.9
2.8
2.2
1.9
1.57
90
120
180
2.2
Tj initial = 25 C max
108.5
114
2.8
4
119.5
125
0
0
0
5
10
15
1
10
100
1000
IT(AV) / A
Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
a = form factor = IT(RMS)/ IT(AV)
.
ITSM / A
IT(RMS) / A
1000
100
10
50
40
30
20
10
0
dIT/dt limit
I
TSM
time
I
T
T
Tj initial = 25 C max
10ms
10us
100us
1ms
0.01
0.1
surge duration / s
1
10
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 103˚C.
VGT(Tj)
IT(RMS) / A
25
20
15
10
5
VGT(25 C)
1.6
1.4
1.2
1
103 C
0.8
0.6
0.4
0
-50
0
50
Tmb / C
100
150
-50
0
50
100
150
Tj / C
Fig.3. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT152B series
IGT(Tj)
IGT(25 C)
IT / A
50
40
30
20
10
0
Tj = 125 C
Tj = 25 C
3
2.5
2
Vo = 1.12 V
Rs = 0.015 ohms
max
typ
1.5
1
0.5
0
0
0.5
1
1.5
2
-50
0
50
100
150
Tj / C
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
1
3
2.5
2
0.1
1.5
1
t
P
p
D
0.01
0.001
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
IH(Tj)
IH(25 C)
dVD/dt (V/us)
10000
3
2.5
2
RGK = 100 Ohms
1000
gate open circuit
1.5
1
100
0.5
0
10
-50
0
50
Tj / C
100
150
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT152B series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT152B series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.100
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