BSX20 [NXP]
NPN switching transistor; NPN开关晶体管型号: | BSX20 |
厂家: | NXP |
描述: | NPN switching transistor |
文件: | 总8页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSX20
NPN switching transistor
1997 May 14
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
NPN switching transistor
BSX20
FEATURES
PINNING
PIN
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
DESCRIPTION
1
2
3
emitter
base
APPLICATIONS
collector, connected to case
• High-speed saturated switching (and HF amplifier
applications).
3
1
handbook, halfpage
1
DESCRIPTION
2
2
NPN switching transistor in a TO-18 metal package.
3
MAM264
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
CONDITIONS
MIN.
MAX.
40
UNIT
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
open emitter
open base
−
−
−
−
V
V
15
200
360
120
−
mA
Ptot
Tamb ≤ 25 °C
mW
hFE
IC = 10 mA; VCE = 1 V
40
20
500
−
IC = 100 mA; VCE = 2 V
fT
transition frequency
turn-off time
IC = 10 mA; VCE = 10 V; f = 100 MHz
ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA
−
MHz
ns
toff
30
1997 May 14
2
Philips Semiconductors
Product specification
NPN switching transistor
BSX20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
15
open collector
4.5
200
300
100
360
+150
200
+150
mA
mA
mA
mW
°C
ICM
t ≤ 10 µs
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
−65
−
°C
Tamb
−65
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
K/W
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
480
150
Rth j-c
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 20 V
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
−
−
400
30
nA
µA
nA
IE = 0; VCB = 20 V; Tj = 150 °C
IC = 0; VEB = 4 V
−
−
IEBO
hFE
emitter cut-off current
DC current gain
−
−
100
120
−
IC = 10 mA; VCE = 1 V
40
20
20
−
−
IC = 10 mA; VCE = 1 V; Tj = −55 °C
IC = 100 mA; VCE = 2 V
−
−
−
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.3 mA
IC = 10 mA; IB = 1 mA
−
300
250
600
850
1.5
4
mV
mV
mV
mV
V
−
−
IC = 100 mA; IB = 10 mA
−
−
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
700
−
−
IC = 100 mA; IB = 10 mA
−
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VEB = 1 V; f = 1 MHz
−
−
pF
−
−
4.5
−
pF
IC = 10 mA; VCE = 10 V; f = 100 MHz 500
600
MHz
1997 May 14
3
Philips Semiconductors
Product specification
NPN switching transistor
BSX20
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Switching times (between 10% and 90% levels)
ton
td
tr
turn-on time
delay time
rise time
ICon = 10 mA; IBon = 3 mA;
IBoff = −1.5 mA; see Fig.2, test
conditions A
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
10
4
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6
toff
ts
turn-off time
storage time
fall time
30
15
15
13
3
tf
ton
td
tr
turn-on time
delay time
rise time
ICon = 100 mA; IBon = 40 mA;
IBoff = −20 mA; see Fig.2, test
conditions B
10
35
25
10
toff
ts
turn-off time
storage time
fall time
tf
V
B
V
C
BB
CC
h
R
R
V
(probe)
(probe)
o
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
i
DUT
R1
MLB826
Test conditions A.
Test conditions B.
Vi = 0.5 to 4.2 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 1 ns.
R1 = 56 Ω; R2 = 1 kΩ; RB = 1 kΩ; RC = 270 Ω.
VBB = 0.2 V; VCC = 2.7 V.
Vi = 0.5 to 4.52 V; T = 200 µs; tp = 10 µs; tr = tf ≤ 1 ns.
R1 = 100 Ω; R2 = 68 Ω; RB = 390 Ω; RC = 47 Ω.
VBB = −3 V; VCC = 4.6 V.
Fig.2 Test circuit for switching times.
1997 May 14
4
Philips Semiconductors
Product specification
NPN switching transistor
BSX20
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
seating plane
α
j
B
w
M
M
M
B
A
1
b
k
D
1
2
3
a
A
D
A
L
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D
j
k
L
w
α
1
5.31
4.74
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
mm
0.40
2.54
45°
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
B11/C7 type 3
JEDEC
EIAJ
SOT18/13
TO-18
97-04-18
1997 May 14
5
Philips Semiconductors
Product specification
NPN switching transistor
BSX20
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 14
6
Philips Semiconductors
Product specification
NPN switching transistor
BSX20
NOTES
1997 May 14
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 May 14
Document order number: 9397 750 02312
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