BLF6G15L-40BRN,118 [NXP]
BLF6G15L-40BRN;
| 型号： | BLF6G15L-40BRN,118 |
| 厂家： | 
NXP |
| 描述： | BLF6G15L-40BRN |
| 文件： | 总11页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G15L-40BRN
Power LDMOS transistor
Rev. 2 — 12 November 2010
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
(V)
28
PL(AV)
(W)
Gp
ηD
ACPR
(dBc)
−45 [1]
(MHz)
(dB)
22.0
(%)
13.0
2-carrier W-CDMA
1476 to 1511
2.5
[1] Test signal: 3GPP test model 1, 64 DPCH; PAR = 7.5 dB at probability of 0.01% on CCDF carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz, a
supply voltage of 28 V and an IDq of 330 mA:
Average output power = 2.5 W
Power gain = 22.0 dB
Efficiency = 13.0 %
ACPR = −45 dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
Integrated current sense
BLF6G15L-40BRN
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1450 MHz to 1550 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Graphic symbol
4
5
1
4, 5
2
gate
1
2
[1]
3
source
2
6, 7
4, 5
6, 7
sense drain
sense gate
3
sym126
3
6
7
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF6G15L-40BRN
-
flanged ceramic package; 2 mounting holes; 6 leads SOT1112A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
-
65
VGS
−0.5 +11
−0.5 +9
V
VGS(sense) sense gate-source voltage
V
ID
drain current
-
11
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
200 °C
-
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 2.5 W (CW)
1.6 K/W
BLF6G15L-40BRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 12 November 2010
2 of 11
BLF6G15L-40BRN
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C per section; unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.59 mA
65
-
-
V
V
VGS(th)
IDq
gate-source threshold voltage
quiescent drain current
VDS = 10 V; ID = 59 mA
sense transistor:
1.4 1.9 2.4
280 330 380 mA
IDS= 5.1 mA; VDS = 12 V
main transistor:
VDS = 28 V
IDSS
IDSX
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
-
1.4 μA
VGS = VGS(th) + 3.75 V;
VDS = 10 V
8.8 10
-
A
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 2.9 A
-
-
140 nA
forward transconductance
2.7 4.3
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 2.06 A
0.09 0.25 0.39 Ω
7. Application information
Table 7.
2-carrier W-CDMA RF performance
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
64 DPCH; f1 = 1473.4 MHz; f2 = 1478.4 MHz; f3 = 1508.4 MHz; f4 = 1513.4 MHz; RF performance at
VDS = 28 V; IDq = 330 mA; Tcase = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
2.5
19.8 22.0
Max
Unit
W
PL(AV)
Gp
average output power
-
-
power gain
PL(AV) = 2.5 W
PL(AV) = 2.5 W
PL(AV) = 2.5 W
PL(AV) = 2.5 W
-
dB
dB
%
RLin
ηD
input return loss
10
11
-
15
-
drain efficiency
13
-
ACPR
adjacent channel power ratio
−45
−40
dBc
Table 8.
1 carrier W-CDMA PAR performance
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
64 DPCH; f1 = 1510.9 MHz; RF performance at VDS = 28 V; IDq = 330 mA; Tcase = 25 °C;
unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
dB
PARO
output peak-to-average ratio PL(AV) = 10 W at 0.01 %
probability on CCDF
5.3
6.0
-
7.1 Ruggedness in class-AB operation
The BLF6G15L-40BRN is capable of withstanding a load mismatch corresponding to
VSWR = 10 :1 through all phases under the following conditions: VDS = 28 V;
IDq = 330 mA; PL = 30 W; f = 1475 MHz (CW).
BLF6G15L-40BRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 12 November 2010
3 of 11
BLF6G15L-40BRN
NXP Semiconductors
Power LDMOS transistor
7.2 Impedance information
Table 9.
Typical impedance per section
IDq = 330 mA; main transistor VDS = 28 V
[1]
[1]
f
ZS
ZL
(MHz)
1480
1510
(Ω)
(Ω)
3.2 − j6.3
4.4 − j6.5
4.6 − j4.5
4.6 − j4.5
[1] ZS and ZL defined in Figure 1.
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.3 Graphs
7.3.1 CW
001aan080
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
70
60
50
40
30
20
10
0
η
G
(dB)
D
(%)
p
η
D
G
p
(1)
(2)
(3)
(1)
(2)
(3)
0
10
20
30
40
P
L
(W)
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
Fig 2. Power gain and drain efficiency as function of load power; typical values
BLF6G15L-40BRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 12 November 2010
4 of 11
BLF6G15L-40BRN
NXP Semiconductors
Power LDMOS transistor
7.3.2 2C-WCDMA (5 MHz spacing)
001aan081
001aan082
24.0
50
40
30
20
10
0
−15
ACPR
5M
(4)
η
G
D
(%)
p
(dB)
ACPR
(dBc)
η
D
23.0
(5)
(6)
(1)
(2)
(3)
−25
−35
−45
−55
ACPR
10M
22.0
21.0
20.0
19.0
(1)
(2)
(3)
G
p
(1)
(2)
(3)
0
10
20
30
0
10
20
30
P
(W)
P (W)
L
L
3GPP, test model 1; 64 DPCH, PAR = 7.5 dB at
0.01 % probability per carrier. 5 MHz carrier spacing.
3GPP, test model 1; 64 DPCH, PAR = 7.5 dB at
0.01 % probability per carrier. 5 MHz carrier spacing.
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
Fig 3. Power gain and drain efficiency as function of
load power; typical values
Fig 4. Adjacent channel power ratio as a function of
load power; typical values
BLF6G15L-40BRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 12 November 2010
5 of 11
BLF6G15L-40BRN
NXP Semiconductors
Power LDMOS transistor
8. Test information
C15
C13
R4
R3
C14
+
C7
C6
C5
−
C1
C2
R1
C3
C4
R2
C8
C9
C10
C11
C16
C12
014aab103
Printed-Circuit Board (PCB): Rogers RO4350; εr = 3.5 F/m; thickness = 0.762 mm; thickness copper plating = 35 μm.
The vias can be as a reference to place components.
The above layout shows the test circuit used to measure the devices in production. A more appropriate application
demonstration for specific customer needs can be provided.
See Table 10 for list of components.
Fig 5. Component layout
Table 10. List of components
See Figure 5 for component layout.
Component
C1, C8
C2, C6, C9
C3, C4
C5, C11
C7
Description
Value
68 pF
Remarks
[1]
[1]
[2]
[1]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
160 pF
24 pF
47 pF
470 μF; 63 V
15 pF
[1]
[1]
[1]
C10
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
chip resistor
C12
43 pF
C13
20 pF
C14, C15
C16
1 μF
Murata 0603
100 pF
15 Ω
R1, R2
R3
Philips 0603
Philips 0603
Philips 0603
chip resistor
820 Ω
1.8 kΩ
R4
chip resistor
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] American Technical Ceramics type 800B or capacitor of same quality.
BLF6G15L-40BRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 12 November 2010
6 of 11
BLF6G15L-40BRN
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 6 leads
SOT1112A
D
A
F
D
U
L
1
B
C
1
q
c
4
1
5
α
p
U
2
E
1
H
Z
E
w
1
A
B
3
A
6
b
2
7
b
w
2
C
Q
1
0
5
10 mm
scale
Dimensions
(1)
(2)
Unit
A
b
b
c
D
D
1
E
E
F
H
L
p
Q
q
U
U
2
w
1
w
2
Z
α
1
1
1
°
64
max 4.65 1.14 5.26 0.18 9.65 9.65 9.65 9.65 1.14 17.12 3.00 3.30 1.70
mm nom
20.45 9.91
5.97
15.24
0.6
0.25 0.51
0.01 0.02
°
°
62
64
min 3.76 0.89 5.00 0.10 9.40 9.40 9.40 9.40 0.89 16.10 2.69 2.92 1.45
20.19 9.65
0.805 0.39
5.72
max 0.183 0.045 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.674 0.118 0.130 0.067
inches nom
min 0.148 0.035 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.634 0.106 0.115 0.057
0.235
°
62
0.795 0.38
0.225
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1112a_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
10-02-02
SOT1112A
Fig 6. Package outline SOT1112A
BLF6G15L-40BRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 12 November 2010
7 of 11
BLF6G15L-40BRN
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 11. Abbreviations
Acronym
3GPP
Description
3rd Generation Partnership Project
CCDF
LDMOS
PAR
Complementary Cumulative Distribution Function
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average power Ratio
DPCH
RF
Dedicated Physical Channel
Radio Frequency
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 12. Revision history
Document ID
Release date
20101112
Data sheet status
Change notice
Supersedes
BLF6G15L-40BRN v.2
Modifications:
Product data sheet
-
BLF6G15L-40BRN v.1
• Data sheet status changed from Preliminary sheet to Product data
20100914 Preliminary data sheet
BLF6G15L-40BRN v.1
-
-
BLF6G15L-40BRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 12 November 2010
8 of 11
BLF6G15L-40BRN
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BLF6G15L-40BRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 12 November 2010
9 of 11
BLF6G15L-40BRN
NXP Semiconductors
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G15L-40BRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 12 November 2010
10 of 11
BLF6G15L-40BRN
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
7.3
7.3.1
7.3.2
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information. . . . . . . . . . . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2C-WCDMA (5 MHz spacing). . . . . . . . . . . . . . 5
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 November 2010
Document identifier: BLF6G15L-40BRN
相关型号：
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