BGA3012 [NXP]
1 GHz 12 dB gain wideband amplifier MMIC;
| 型号： | BGA3012 |
| 厂家： | 
NXP |
| 描述： | 1 GHz 12 dB gain wideband amplifier MMIC 射频 微波 |
| 文件： | 总15页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGA3012
SOT89
1 GHz 12 dB gain wideband amplifier MMIC
Rev. 3 — 26 September 2013
Product data sheet
1. Product profile
1.1 General description
The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed
specifically for high linearity CATV line extenders and drop amplifiers over a frequency
range of 5 MHz to 1006 MHz. The LNA is housed in a lead free 3-pin SOT89 package.
1.2 Features and benefits
Internally biased
Flat gain
Noise figure of 3.1 dB
75 input and output impedance
High linearity with an IP3O of 40 dBm and Operating from 5 V to 8 V supply
an IP2O of 60 dBm
1.3 Applications
General wideband amplifiers.
CATV return amplifier; frequency ranges of 5 MHz to 300 MHz.
CATV infrastructure network driver in optical nodes (FTTx), distribution amplifiers,
trunk amplifiers and line extenders in the frequency range from 40 MHz to 1006 MHz.
The product is ideally suited for applications as drop amplifiers in CATV distribution
systems such as FTTH
1.4 Quick reference data
Table 1.
Quick reference data
Bandwidth 40 MHz to 1006 MHz; Tamb = 25 C; typical values at VCC = 8 V; ZS = ZL = 75 ; R1 = 100 ; R2 = 300 .
Symbol
VCC
Parameter
Conditions
Min Typ
Max Unit
supply voltage
RF input AC coupled
7.6
-
8
8.4
125
+85
3.6
-
V
ICC(tot)
Tamb
total supply current
110
-
mA
C
ambient temperature
noise figure
40
-
NF
f = 500 MHz
3.1
dB
PL(1dB)
IP3O
output power at 1 dB gain compression
output third-order intercept point
output second-order intercept point
21.5 23
dBm
dBm
dBm
[1]
[2]
36
-
40
60
-
IP2O
-
[1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM3) is 2 f2 f1, where
f2 = f1 6 MHz. Input power Pi = 20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM2) is f2 f1, with
40 MHz < f1-f2 < 1006 MHz. Input power Pi = 20 dBm.
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
2. Pinning information
Table 2.
Pinning
Pin
1
Description
RF_OUT and biasing
GND
Simplified outline
Graphic symbol
[1]
[2]
[1]
2
3
1
3
RF_IN
2
sym130
3
2
1
[1] This pin is DC-coupled and requires an external DC-blocking capacitor.
[2] The center metal base of the SOT89 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BGA3012
plastic surface-mounted package; exposed die pad
for good heat transfer; 3 leads
SOT89
OM7858
OM7862
OM7866
EVB
EVB
EVB
1 GHz 12 dB gain wideband amplifier application
-
5 MHz to 300 MHz 12 dB reverse amplifier application -
40 MHz to 1006 MHz push-pull amplifier application
-
4. Marking
Table 4.
Marking codes
Type number
Marking code
Description
BGA3012
*6W
* = W : made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VCC
Pi
supply voltage
RF input AC coupled
single tone
0.6 +15
20
V
input power
-
dBm
Tstg
Tj
storage temperature
junction temperature
ambient temperature
65 +150 C
-
150
C
C
kV
Tamb
VESD
40 +85
electrostatic discharge
voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
2
2
-
-
Charged Device Model (CDM);
kV
According JEDEC standard 22-C101B
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
2 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction to solder point
40
K/W
7. Characteristics
7.1 Forward application
Table 7.
Characteristics at VCC = 8 V
Bandwidth 40 MHz to 1006 MHz; Tamb = 25 C; typical values at VCC = 8 V; ZS = ZL = 75 ;
R1 = 100 ; R2 = 300 .
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC(tot)
s212
SLsl
FL
supply voltage
RF input AC coupled
7.6
8
8.4
V
total supply current
insertion power gain
slope straight line
flatness of frequency response
noise figure
-
110 125 mA
11
-
12 13
dB
dB
dB
0.5
0.5
-
-
-
NF
f = 50 MHz
-
3.0 3.5 dB
3.1 3.6 dB
3.4 3.9 dB
f = 500 MHz
f = 1000 MHz
f = 50 MHz
-
-
RLin
input return loss
output return loss
-
22
27
29
21
22
15
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dBm
f = 500 MHz
f = 1000 MHz
f = 50 MHz
-
-
RLout
-
f = 500 MHz
f = 1000 MHz
-
-
PL(1dB)
output power at 1 dB
gain compression
21.5 23
[1]
[2]
[3]
[3]
IP3O
IP2O
CTB
CSO
output third-order intercept point
output second-order intercept point
composite triple beat
36
-
40
60
-
-
dBm
dBm
dBc
dBc
-
75 -
60 -
composite second-order distortion
-
[1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM3) is 2 f2 f1, where f2 = f1 6 MHz. Input power Pi = 20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM2) is f2 f1, with 40 MHz < f1-f2 < 1006 MHz. Input power Pi = 20 dBm.
[3] Measured with 132 NTSC channels VO = 30 dBmV.
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
3 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
Table 8.
Characteristics at VCC = 5 V
Bandwidth 40 MHz to 1006 MHz; Tamb = 25 C; typical values at VCC = 5 V; ZS = ZL = 75 ;
R1 = 100 ; R2 = 300 .
Symbol Parameter
Conditions
Min Typ Max Unit
4.75 5 5.25 V
70 85 mA
VCC
ICC(tot)
s212
SLsl
FL
supply voltage
RF input AC coupled
total supply current
insertion power gain
slope straight line
flatness of frequency response
noise figure
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
0.5
0.5
2.9
2.9
3.2
22
25
25
22
22
12
18
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
NF
f = 50 MHz
f = 500 MHz
f = 1000 MHz
f = 50 MHz
RLin
input return loss
output return loss
f = 500 MHz
f = 1000 MHz
f = 50 MHz
RLout
f = 500 MHz
f = 1000 MHz
PL(1dB)
output power at 1 dB
gain compression
[1]
[2]
[3]
[3]
IP3O
IP2O
CTB
CSO
output third-order intercept point
output second-order intercept point
composite triple beat
-
-
-
-
36
54
-
-
dBm
dBm
dBc
dBc
70 -
54 -
composite second-order distortion
[1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM3) is 2 f2 f1, where f2 = f1 6 MHz. Input power Pi = 20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM2) is f2 f1, with 40 MHz < f1-f2 < 1006 MHz. Input power Pi = 20 dBm.
[3] Measured with 132 NTSC channels VO = 30 dBmV.
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
4 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
7.2 Return application
Table 9.
Characteristics at VCC = 8 V
Bandwidth 5 MHz to 300 MHz; Tamb = 25 C; typical values at VCC = 8 V; ZS = ZL = 75 ;
R1 = 100 ; R2 = 300 .
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC(tot)
s212
SLsl
FL
supply voltage
RF input AC coupled
7.6
8
8.4
V
total supply current
insertion power gain
slope straight line
flatness of frequency response
noise figure
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110 125 mA
12
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
0.5
0.5
3.0
NF
f = 50 MHz
f = 5 MHz
RLin
input return loss
18.5 -
18.5 -
18.5 -
18.5 -
18.5 -
18.5 -
18.5 -
18.5 -
f = 100 MHz
f = 200 MHz
f = 300 MHz
f = 5 MHz
RLout
output return loss
f = 100 MHz
f = 200 MHz
f = 300 MHz
PL(1dB)
output power at 1 dB
gain compression
23
-
[1]
[2]
IP3O
IP2O
output third-order intercept point
output second-order intercept point
-
-
40
60
-
-
dBm
dBm
[1] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM3) is 2 f2 f1, where f2 = f1 6 MHz. Input power Pi = 20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM2) is f2 f1, with 40 MHz < f1-f2 < 300 MHz. Input power Pi = 20 dBm.
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
5 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
Table 10. Characteristics at VCC = 5 V
Bandwidth 5 MHz to 300 MHz; Tamb = 25 C; typical values at VCC = 5 V; ZS = ZL = 75 ;
R1 = 100 ; R2 = 300 .
Symbol Parameter
Conditions
Min Typ Max Unit
4.75 5 5.25 V
70
VCC
ICC(tot)
s212
SLsl
FL
supply voltage
RF input AC coupled
total supply current
insertion power gain
slope straight line
flatness of frequency response
noise figure
-
-
-
-
-
-
-
-
-
-
-
-
-
-
85
-
mA
12
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
0.5
0.5
2.9
-
-
NF
f = 50 MHz
f = 5 MHz
-
RLin
input return loss
18.5 -
18.5 -
18.5 -
18.5 -
18.5 -
18.5 -
18.5 -
18.5 -
f = 100 MHz
f = 200 MHz
f = 300 MHz
f = 5 MHz
RLout
output return loss
f = 100 MHz
f = 200 MHz
f = 300 MHz
PL(1dB)
output power at 1 dB
gain compression
17
-
[1]
[2]
IP3O
IP2O
output third-order intercept point
output second-order intercept point
-
-
40
55
-
-
dBm
dBm
[1] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM3) is 2 f2 f1, where f2 = f1 6 MHz. Input power Pi = 20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM2) is f2 f1, with 40 MHz < f1-f2 < 300 MHz. Input power Pi = 20 dBm.
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
6 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
8. Application information
8.1 Forward application 40 MHz to 1006 MHz
The BGA3012 can be used in other applications. Please contact your local sales
representative for more information. Application notes are available on the NXP website.
8.1.1 Forward application circuit
-ꢁ
9
&&
&ꢃ
5ꢀ
&ꢄ
/ꢃ
/ꢂ
&ꢂ
5ꢂ
8ꢀ
-ꢀ
&ꢀ
&ꢁ
-ꢂ
/ꢀ
ꢁ
ꢀ
/ꢁ
5)BLQ
5)BRXW
ꢂ
DDDꢀꢁꢁꢂꢂꢃꢂ
Components are listed in Table 11.
Fig 1. BGA3012 application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
7 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
8.1.2 Forward application circuit board layout
%*$ꢁꢅ[[ꢆ(9%
YHUVLRQꢆꢅꢇꢂ
1RYHPEHUꢆꢂꢅꢀꢂ
ꢃꢅꢆ0+]ꢆꢈꢆꢀꢅꢅꢉꢆ0+]
-ꢁ
3&%ꢆ6SHFꢊꢆ)5ꢃꢊꢆ(Uꢆ ꢆꢃꢇꢉ
5)ꢆOD\HUꢆ ꢆꢀꢇꢄꢆPPꢆꢊꢆꢋꢄꢆ2KP
&ꢃ
&ꢄ
-ꢀ
-ꢂ
/ꢃ
8ꢀ
&ꢂ
&ꢀ
/ꢀ
/ꢂ
/ꢁ
&ꢁ
5ꢀ
5ꢂ
5)ꢆ,1
6HPLFRQGXFWRUV
5)ꢆ287
DDDꢀꢁꢁꢂꢂꢃꢄ
PCB (Printed-Circuit Board) material = FR4; thickness = 1.5 mm; size = 40 mm 40 mm; r = 4.6; thickness of copper
layer = 35 m;
Components are listed in Table 11.
Fig 2. BGA3012 application circuit board layout
Table 11. List of components
See Figure 1 and Figure 2.
Component
Description
Value
10 nF
100 pF
75
-
Size
Remarks
C1, C2, C3, C4 capacitor
SMD 0402 Murata GRM155R71E103KA01D or capacitor of same quality
SMD 0402 Murata GRM1555C1H101JZ01D or capacitor of same quality
C5
capacitor
F-connector
header 3-way
inductor
J1, J2
J3
-
-
Bomar 861V509ER6 or F-connector of same quality
Molex 90121-0763 or header of the same quality
L1, L3
L2
3.9 nH
-
SMD 0402 Murata LQG15HS3N9S02D or inductor of same quality
SMD 0603 Murata BLM18HD182SN1D or choke of same quality
SMD 1206 Murata LQH31HNR88K03L or inductor of same quality
SMD 0402 Yageo RC0402FR-07100RL or resistor of same quality
SMD 0402 Yageo RC0402FR-07300RL or resistor of same quality
choke
L4
inductor
880 nH
100
300
-
R1
resistor
R2
resistor
U1
BGA3012
-
NXP
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
8 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
8.2 Return application 5 MHz to 300 MHz
The BGA3012 can be used in other applications. Please contact your local sales
representative for more information. Application notes are available on the NXP website.
8.2.1 Return application circuit
-ꢁ
9
&&
&ꢃ
5ꢀ
&ꢄ
/ꢂ
&ꢂ
5ꢂ
8ꢀ
-ꢀ
&ꢀ
&ꢁ
-ꢂ
ꢁ
ꢀ
5)BLQ
5)BRXW
ꢂ
DDDꢀꢁꢁꢂꢂꢃꢅ
Components are listed in Table 11.
Fig 3. BGA3012 application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
9 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
8.2.2 Return application circuit board layout
%*$ꢁꢅ[[ꢆ(9%
YHUVLRQꢆꢅꢇꢁ
1RYHPEHUꢆꢂꢅꢀꢂ
ꢄꢆ0+]ꢆꢈꢆꢁꢅꢅꢆ0+]
-ꢁ
3&%ꢆ6SHFꢊꢆ)5ꢃꢊꢆ(Uꢆ ꢆꢃꢇꢉ
5)ꢆOD\HUꢆ ꢆꢀꢇꢄꢆPPꢆꢊꢆꢋꢄꢆ2KP
&ꢃ
&ꢄ
-ꢀ
-ꢂ
/ꢂ
8ꢀ
&ꢀ
&ꢁ
5ꢀ
5ꢂ
&ꢂ
5)ꢆ,1
6HPLFRQGXFWRUV
5)ꢆ287
DDDꢀꢁꢁꢂꢂꢃꢆ
PCB (Printed-Circuit Board) material = FR4; thickness = 1.5 mm; size = 40 mm 40 mm; r = 4.6; thickness of copper
layer = 35 m;
Components are listed in Table 11.
Fig 4. BGA3012 application circuit board layout
Table 12. List of components
See Figure 1 and Figure 2.
Component
Description
Value
10 nF
100 pF
75
-
Size
Remarks
C1, C2, C3, C4 capacitor
SMD 0402 Murata GRM155R71E103KA01D or capacitor of same quality
SMD 0402 Murata GRM1555C1H101JZ01D or capacitor of same quality
C5
capacitor
F-connector
header 3-way
inductor
J1, J2
J3
-
-
Bomar 861V509ER6 or F-connector of same quality
Molex 90121-0763 or header of the same quality
L2
22 H
100
300
-
SMD 1206 Murata LQH31CN220K03L or inductor of same quality
SMD 0402 Yageo RC0402FR-07100RL or resistor of same quality
SMD 0402 Yageo RC0402FR-07300RL or resistor of same quality
R1
resistor
R2
resistor
U1
BGA3012
-
NXP
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
10 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
9. Package outline
Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
B
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
SC-62
06-03-16
06-08-29
SOT89
TO-243
Fig 5. Package outline SOT89 (SC-62)
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
11 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
10. Abbreviations
Table 13. Abbreviations
Acronym
CATV
FTTH
FTTx
Description
Community Antenna TeleVision
Fiber To The Home
Fiber To The “x”
LNA
Low-Noise Amplifier
MMIC
Monolithic Microwave Integrated Circuit
11. Revision history
Table 14. Revision history
Document ID
BGA3012 v.3
Modifications:
BGA3012 v.2
BGA3012 v.1
Release date
20130926
Data sheet status
Change notice
Supersedes
Product data sheet
-
BGA3012 v.2
• Table 3 on page 2: Evaluation boards have been added.
20130415
Product data sheet
-
BGA3012 v.1
-
20130319
Preliminary data sheet
-
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
12 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
12.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
13 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
14 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Forward application . . . . . . . . . . . . . . . . . . . . . 3
Return application. . . . . . . . . . . . . . . . . . . . . . . 5
8
8.1
8.1.1
8.1.2
8.2
8.2.1
8.2.2
Application information. . . . . . . . . . . . . . . . . . . 7
Forward application 40 MHz to 1006 MHz . . . . 7
Forward application circuit . . . . . . . . . . . . . . . . 7
Forward application circuit board layout . . . . . . 8
Return application 5 MHz to 300 MHz . . . . . . . 9
Return application circuit . . . . . . . . . . . . . . . . . 9
Return application circuit board layout . . . . . . 10
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 September 2013
Document identifier: BGA3012
相关型号：
BGA310
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
INFINEON
BGA312
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
INFINEON
BGA318
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
INFINEON
©2020 ICPDF网 联系我们和版权申明