BGA2709,115 [NXP]
BGA2709 - MMIC wideband amplifier TSSOP 6-Pin;
| 型号： | BGA2709,115 |
| 厂家： | 
NXP |
| 描述： | BGA2709 - MMIC wideband amplifier TSSOP 6-Pin 射频 微波 |
| 文件： | 总12页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGA2709
MMIC wideband amplifier
Product specification
2002 Aug 06
Supersedes data of 2002 Feb 05
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
FEATURES
PINNING
PIN
Internally matched to 50
DESCRIPTION
Very wide frequency range (3.6 GHz at 3 dB bandwidth)
Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness)
1
2, 5
3
VS
GND2
RF out
GND1
RF in
12.5 dBm saturated output power at 1 GHz
High linearity (22 dBm OIP3 at 1 GHz)
Unconditionally stable (K > 1.2).
4
6
APPLICATIONS
6
1
5
2
4
3
1
Cable systems
LNB IF amplifiers
General purpose
ISM.
6
3
4
2, 5
Top view
MAM455
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
Marking code: E3-.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
PARAMETER
DC supply voltage
CONDITIONS
TYP.
MAX.
UNIT
5
6
V
IS
|s21|2
DC supply current
insertion power gain
noise figure
23.5
22.7
4
mA
dB
f = 1 GHz
f = 1 GHz
f = 1 GHz
NF
dB
PL(sat)
saturated load power
12.5
dBm
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS
VS DC supply voltage RF input AC coupled
MIN.
MAX.
UNIT
6
V
IS
supply current
35
mA
mW
C
Ptot
Tstg
Tj
total power dissipation
storage temperature
operating junction temperature
maximum drive power
Ts 90 C
200
+150
150
10
65
C
PD
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2002 Aug 06
2
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
300
UNIT
thermal resistance from junction to solder
point
Ptot = 200 mW; Ts 90 C
K/W
CHARACTERISTICS
VS = 5 V; IS = 23.5 mA; Tj = 25 C unless otherwise specified.
SYMBOL
IS
|s21|2
PARAMETER
supply current
CONDITIONS
MIN.
TYP.
23.5
MAX.
32
UNIT
19
21
21
22
21
20
18
9
mA
dB
insertion power gain
f = 100 MHz
f = 1 GHz
22.2
22.7
23.0
23.0
22.1
21.1
11
23
24
24
24
23
22
dB
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
dB
dB
dB
dB
RL IN
RL OUT
|s12|2
NF
return losses input
return losses output
isolation
f = 1 GHz
dB
f = 2.2 GHz
f = 1 GHz
9
11
dB
17
20
31
34
20
dB
f = 2.2 GHz
f = 1.6 GHz
f = 2.2 GHz
f = 1 GHz
24
dB
33
dB
36
dB
noise figure
4.0
4.4
3.6
1.7
2.2
12.5
7.5
8.3
5.4
1
4.4
4.9
dB
f = 2.2 GHz
dB
BW
K
bandwidth
at s212 3 dB below flat gain at 1 GHz 3.1
GHz
stability factor
f = 1 GHz
1.3
1.8
11
5
f = 2 GHz
PL(sat)
PL 1 dB
IP3(in)
IP3(out)
saturated load power
load power
f = 1 GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
f = 2.2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2.2 GHz
f = 1 GHz
7
3
input intercept point
output intercept point
3
7
20
12
f = 2.2 GHz
9
f = 1 GHz
22
f = 2.2 GHz
14
2002 Aug 06
3
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
APPLICATION INFORMATION
In Fig.6 the MMIC is used as a driver to the power amplifier
in part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
Figure 2 shows a typical application circuit for the
BGA2709 MMIC. The device is internally matched to 50 ,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2,
C3 should be not more than 100 pF for applications above
100 MHz. However, when the device is operated below
100 MHz, the capacitor value should be increased.
DC-block
100 pF
DC-block
100 pF
DC-block
100 pF
handbook, halfpage
The nominal value of the RF choke, L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value must be used (e.g. 10 nH) to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
input
output
MGU437
Fig.3 Simple cascade circuit.
Both the RF choke, L1 and the 22 nF supply decoupling
capacitor, C1 should be located as closely as possible to
the MMIC.
mixer
handbook, halfpage
from RF
to IF circuit
or demodulator
Separate paths must be used for the ground planes of the
ground pins GND1, GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
circuit
wideband
amplifier
MGU438
oscillator
Fig.4 IF amplifier application.
V
handbook, halfpage
s
C1
L1
V
s
RF in
RF out
RF input
RF output
C2
C3
mixer
handbook, halfpage
to IF circuit
or demodulator
MGU436
GND1
GND2
antenna
LNA
wideband
amplifier
MGU439
oscillator
Fig.2 Typical application circuit.
Fig.5 RF amplifier application.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
mixer
handbook, halfpage
from modulation
to power
amplifier
The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
or IF circuit
wideband
amplifier
MGU440
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
oscillator
Fig.6 Power amplifier driver application.
2002 Aug 06
4
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
90°
+1
1.0
0.8
0.6
0.4
0.2
0
135°
45°
+2
+0.5
+0.2
+5
100 MHz
0.2
0.5
1
2
5
180°
0
0°
4 GHz
−5
−0.2
−0.5
−2
−45°
−135°
−1
MLD894
1.0
−90°
IS = 23.5 mA; VS = 5 V; PD = 30 dBm; ZO = 50
Fig.7 Input reflection coefficient (s11); typical values.
90°
+1
1.0
0.8
0.6
0.4
0.2
0
135°
+0.2
45°
+2
+0.5
+5
100 MHz
1
4 GHz
0.5
0.2
2
5
180°
0
0°
−5
−0.2
−0.5
−2
−45°
−135°
−1
−90°
MLD895
1.0
IS = 23.5 mA; VS = 5 V; PD = 30 dBm; ZO = 50
Fig.8 Output reflection coefficient (s22); typical values.
5
2002 Aug 06
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
MLD896
MLD897
0
25
handbook, halfpage
handbook, halfpage
2
s
12
2
s
(dBm)
21
−10
(dBm)
(1)
20
(3)
(2)
−20
−30
15
−40
−50
10
0
0
1000
2000
3000
4000
1000
2000
3000
4000
f (MHz)
f (MHz)
PD = 30 dBm; ZO = 50
(1) IS = 28.4 mA; VS = 5.5 V
(2) IS = 23.5 mA; VS = 5 V
(3) IS = 18.8 mA; VS = 4.5 V
IS = 23.5 mA; VS = 5 V; PD = 30 dBm; ZO = 50
Fig.9 Isolation (|s12|2) as a function of frequency;
typical values.
Fig.10 Insertion gain (|s21|2) as a function of
frequency; typical values.
MLD898
MLD899
15
15
handbook, halfpage
handbook, halfpage
(3)
(1)
P
P
L
L
(2)
(dBm)
10
(dBm)
10
(3)
(2)
(1)
5
0
5
0
−5
−5
−10
−30
−10
−20
−10
0
−30
−20
−10
0
P
(dBm)
P
(dBm)
D
D
f = 1 GHz; ZO = 50
f = 2.2 GHz; ZO = 50
(1) VS = 4.5 V
(1) VS = 4.5 V
(2)
V
S = 5 V
(2)
VS = 5 V
(3) VS = 5.5 V
(3) VS = 5.5 V
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
2002 Aug 06
6
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
MLD900
MLD901
5.5
10
handbook, halfpage
handbook, halfpage
NF
(dB)
K
8
5
6
4
4.5
(2) (3)
4
(1)
2
3.5
0
0
0
500
1000
1500
2000
2500
1000
2000
3000
4000
f (MHz)
f (MHz)
PD = 30 dBm; ZO = 50
(1) S = 18.8 mA; VS = 4.5 V
I
(2) IS = 23.5 mA; VS = 5 V
(3) IS = 28.4 mA; VS = 5.5 V
IS = 23.5 mA; VS = 5 V; ZO = 50
Fig.13 Noise figure as a function of frequency;
typical values.
Fig.14 Stability factor as a function of frequency;
typical values.
2002 Aug 06
7
Table 1 Scattering parameters: IS = 23.5 mA; VS = 5 V; PD = 30 dBm; ZO = 50 ; Tamb = 25 C
s11
s21
s12
s22
K-
FACTOR
f (MHz)
MAGNITUDE
(ratio)
ANGLE(
deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
100
200
0.23362
0.25252
0.25838
0.25990
0.26278
0.26695
0.27404
0.27921
0.28486
0.28749
0.28601
0.27487
0.25176
0.21405
0.19288
0.18347
0.17459
0.15344
0.10799
0.05984
0.025953
32.281
11.824
2.149
8.784
12.76
14.88
16.30
16.51
16.78
17.25
17.76
18.98
19.94
17.09
11.85
6.228
6.327
14.14
26.12
39.66
28.87
12.90523
13.22858
13.43580
13.51088
13.56715
13.65916
13.74736
13.85661
14.03414
14.16012
14.23586
14.14430
13.70546
12.75365
11.96153
11.33015
10.94943
10.65459
10.28106
9.56897
21.565
4.852
0.036496
0.032314
0.029604
0.027122
0.024611
0.022107
0.019986
0.018217
0.017049
0.016409
0.015912
0.015829
0.016054
0.015801
0.015406
0.015049
0.015098
0.015529
0.017107
0.018529
0.019276
16.408
5.728
0.16296
0.13501
0.10353
0.085075
0.088892
0.09716
0.10279
0.10385
0.099148
0.089633
0.076785
0.062455
0.044552
0.023668
0.057779
0.094848
0.12948
0.15325
0.16627
0.16317
0.14602
61.578
60.573
41.717
16.95
1.2
1.3
1.3
1.4
1.5
1.7
1.8
1.9
2.0
2.1
2.1
2.2
2.2
2.5
2.7
2.9
3.0
3.0
2.8
2.8
2.9
400
10.31
21.14
30.93
40.37
49.83
59.47
69.50
80.23
91.65
103.9
117.0
129.7
138.7
147.6
156.3
167.3
179.1
170.0
5.865
11.45
15.08
16.33
15.67
13.42
9.927
5.968
2.04
600
800
1.879
13.36
20.25
23.24
24.08
20.58
14.48
4.507
11.808
98.126
104.35
119.98
123.28
126.56
131.67
140.54
157.03
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
1.077
3.361
3.145
7.602
11.411
15.52
20.649
23.92
23.226
18.403
8.97718
157.3
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
2002 Aug 06
9
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
2002 Aug 06
10
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
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individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Semiconductors’ product specifications.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
2002 Aug 06
11
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2010
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp12
Date of release: 2002 Aug 06
相关型号：
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