BFG325/XR [NXP]
NPN 14 GHz wideband transistor; NPN 14 GHz宽带晶体管
| 型号： | BFG325/XR |
| 厂家： | 
NXP |
| 描述： | NPN 14 GHz wideband transistor |
| 文件： | 总12页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFG325/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features
■ High power gain
■ Low noise figure
■ High transition frequency
■ Gold metallization ensures excellent reliability
1.3 Applications
■ Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
◆ analog and digital cellular telephones
◆ cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
◆ radar detectors
◆ pagers
◆ Satellite Antenna TeleVision (SATV) tuners
◆ repeater amplifiers in fiber-optic systems
1.4 Quick reference data
Table 1:
Quick reference data
Symbol Parameter
Conditions
open emitter
Min
Typ
Max Unit
VCBO
VCEO
IC
collector-base voltage
-
-
15
6
V
collector-emitter voltage open base
collector current (DC)
-
-
V
-
-
35
mA
mW
[1]
Ptot
total power dissipation
DC current gain
Tsp ≤ 90 °C
-
-
210
200
hFE
IC = 15 mA; VCE = 3 V;
60
100
Tj = 25 °C
CCBS
fT
collector-base
capacitance
VCB = 5 V; f = 1 MHz;
emitter grounded
-
-
-
0.26 0.4
pF
transition frequency
IC = 15 mA; VCE = 3 V;
f = 1 GHz; Tamb = 25 °C
14
-
-
GHz
dB
Gmax
maximum power gain[2] IC = 15 mA; VCE = 3 V;
18.3
f = 1.8 GHz; Tamb = 25 °C
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
Table 1:
Quick reference data …continued
Conditions
Symbol Parameter
Min
Typ
Max Unit
2
|s21
|
insertion power gain
IC = 15 mA; VCE = 3 V;
f = 1.8 GHz; Tamb = 25 °C;
ZS = ZL = 50 Ω
-
14
-
dB
NF
noise figure
Γs = Γopt; IC = 3 mA;
-
1.1
-
dB
VCE = 3 V; f = 2 GHz
[1] Tsp is the temperature at the soldering point of the collector pin.
[2] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.
2. Pinning information
Table 2:
Pinning
Pin
1
Description
collector
emitter
Simplified outline
Symbol
1
3
4
2
3
base
3
4
emitter
2, 4
2
1
sym086
3. Ordering information
Table 3:
Ordering information
Type number Package
Name
Description
Version
BFG325/XR
SC-61AA plastic surface mounted package; reverse pinning;
4 leads
SOT143R
4. Marking
Table 4:
Marking codes
Type number
Marking code[1]
BFG325/XR
S2*
[1] * = p: made in Hong Kong.
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
open emitter
open base
Min
Max Unit
VCBO
VCEO
VEBO
collector-base voltage
-
-
-
15
6
V
V
V
collector-emitter voltage
emitter-base voltage
open collector
2
9397 750 14247
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
2 of 12
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions
Min
Max Unit
IC
collector current (DC)
-
35
mA
[1]
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tsp ≤ 90 °C
-
210
mW
−65
+175 °C
-
175
°C
[1] Tsp is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol Parameter
Conditions
sp ≤ 90 °C
Typ
Unit
[1]
Rth(j-sp) thermal resistance from junction to solder point
T
405
K/W
[1] Tsp is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
-
Max Unit
ICBO
hFE
collector-base cut-off current
DC current gain
IE = 0 A; VCB = 5 V
IC = 15 mA; VCE = 3 V
-
15
200
0.4
-
nA
60
-
100
0.26
0.27
0.53
14
CCBS
CCES
CEBS
fT
collector-base capacitance
collector-emitter capacitance
emitter-base capacitance
transition frequency
VCB = 5 V; f = 1 MHz; emitter grounded
VCE = 5 V; f = 1 MHz; base grounded
VEB = 0.5 V; f = 1 MHz; collector grounded
IC = 15 mA; VCE = 3 V; f = 1 GHz;
pF
-
pF
-
-
pF
-
-
GHz
T
amb = 25 °C
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
amb = 25 °C
Gmax
maximum power gain[1]
insertion power gain
-
18.3
-
dB
T
2
|s21
|
IC = 15 mA; VCE = 3 V; Tamb = 25 °C;
ZS = ZL = 50 Ω
f = 1.8 GHz
-
-
-
-
14
-
-
-
-
dB
f = 3 GHz
10
dB
NF
noise figure
Γs = Γopt; IC = 3 mA; VCE = 3 V; f = 2 GHz
1.1
8.7
dB
PL(1dB)
output power at 1 dB gain
compression
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
dBm
T
amb = 25 °C; ZS = ZL = 50 Ω
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
amb = 25 °C; ZS = ZL = 50 Ω
IP3
third order intercept point
-
19.4
-
dBm
T
[1] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.
2
1 + Ds 2 – s11 2 – s22
K is the Rollet stability factor: K =
where Ds = s11 × s22 – s12 × s21 .
----------------------------------------------------------
2 × s21 × s12
MSG = maximum stable gain.
9397 750 14247
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
3 of 12
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
001aac147
001aac148
250
35
I
C
P
tot
(mW)
(mA)
30
I
= 350 µA
B
200
300 µA
250 µA
200 µA
25
20
15
10
5
150
100
50
150 µA
100 µA
50 µA
0
0
0
50
100
150
200
0
1
2
3
4
5
CE
6
T
(°C)
V
(V)
sp
Fig 1. Power derating curve
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
001aac149
001aac150
0.34
40
G
(dB)
C
(pF)
CBS
MSG
30
2
0.30
s
21
20
G
max
0.26
0.22
10
0
2
3
4
0
1
2
3
4
5
10
10
10
10
V
(V)
f (MHz)
CB
IC = 0 mA; f = 1 MHz.
IC = 15 mA; VCE = 3 V.
Fig 3. Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 4. Gain as a function of frequency; typical values
9397 750 14247
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
4 of 12
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
90°
+1
1.0
0.8
135°
+0.2
45°
+2
+0.5
0.6
0.4
+5
3 GHz
0.2
0
0.2
0.5
1
2
5
10
0°
0
180°
40 MHz
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
001aac151
−90°
VCE = 3 V; IC = 15 mA; Zo = 50 Ω.
Fig 5. Common emitter input reflection coefficient (s11); typical values
90°
135°
45°
40 MHz
40
3 GHz
50
30
20
10
0
180°
0°
−135°
−45°
001aac152
−90°
VCE = 3 V; IC = 15 mA.
Fig 6. Common emitter forward transmission coefficient (s21); typical values
9397 750 14247
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
5 of 12
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
90°
135°
45°
3 GHz
0.5
0.4
0.3
0.2
0.1
0
40 MHz
180°
0°
−135°
−45°
001aac153
−90°
VCE = 3 V; IC = 15 mA.
Fig 7. Common emitter reverse transmission coefficient (s12); typical values
90°
1.0
+1
0.8
0.6
0.4
0.2
0
135°
+0.2
45°
+0.5
+2
+5
0
0.2
0.5
1
2
5
10
40 MHz
−5
0°
180°
3 GHz
−0.2
−2
−0.5
−135°
−45°
−1
1.0
001aac154
−90°
VCE = 3 V; IC = 15 mA; Zo = 50 Ω.
Fig 8. Common emitter output reflection coefficient (s22); typical values
9397 750 14247
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
6 of 12
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
8. Application information
Table 8:
SPICE parameters of the BFG325 DIE
Sequence
1
Parameter
IS
Value
26.6
200
1
Unit
aA
-
2
BF
3
NF
-
4
VAF
IKF
40
V
5
105
2.3
2.114
10
mA
fA
-
6
ISE
7
NE
8
BR
-
9
NR
1
-
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
VAR
IKR
ISC
NC
2.5
10
V
A
0
aA
-
1.5
3.6
1.5
2.6
185.6
890
0.294
77.06
601
0.159
1
RB
Ω
Ω
Ω
fF
mV
-
RE
RC
CJE
VJE
MJE
CJC
VJC
MJC
XCJC
FC
fF
mV
-
-
0.7
8.1
10
-
TF
ps
-
XTF
VTF
ITF
1000
150
0
V
mA
deg
ns
-
PTF
TR
0
KF
0
AF
1
-
TNOM
EG
25
°C
eV
-
1.014
0
XTB
XTI
8
-
Q1.AREA
2.5
-
9397 750 14247
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
7 of 12
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
L
2
C
CB
C_base_pad
BJT1
C_emitter_pad
C
CE
L
1
L
B
CHIP
C
BE
L
L
E
3
001aac155
Fig 9. Package equivalent circuit of SOT143R
Table 9: List of components; see Figure 9
Designation
Value
17
Unit
fF
CCB
CBE
84
fF
CCE
191
67
fF
C_base_pad
fF
C_emitter_pad
142
0.95
0.40
0.12
0.21
0.06
fF
LB
LE
L1
L2
L3
nH
nH
nH
nH
nH
9397 750 14247
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
8 of 12
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
9. Package outline
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
3
4
Q
A
A
1
c
2
1
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.55
0.25
0.45
0.25
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
99-09-13
04-11-16
SOT143R
SC-61AA
Fig 10. Package outline SOT143R (SC-61AA)
9397 750 14247
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
9 of 12
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
10. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
20050202 Product data sheet
Change notice Doc. number
9397 750 14247
Supersedes
BFG325_XR_1
-
-
9397 750 14247
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
10 of 12
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14247
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
11 of 12
BFG325/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
13
14
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 2 February 2005
Document number: 9397 750 14247
Published in The Netherlands
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