BF904R [NXP]
N-channel dual gate MOS-FETs; N沟道双栅MOS - FET的型号: | BF904R |
厂家: | NXP |
描述: | N-channel dual gate MOS-FETs |
文件: | 总16页 (文件大小:115K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF904; BF904R
N-channel dual gate MOS-FETs
1999 May 17
Product specification
Supersedes data of 1997 Sep 05
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
FEATURES
• Specially designed for use at 5 V supply voltage
• Short channel transistor with high transfer admittance to
input capacitance ratio
CAUTION
This product is supplied in anti-static packing to
prevent damage caused by electrostatic discharge
during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A
and SNW-FQ-302B.
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
PINNING
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
source
drain
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143B and SOT143R package. The
transistor consists of an amplifier MOS-FET with source
g2
g1
gate 2
gate 1
d
d
handbook, halfpage
handbook, halfpage
3
4
4
3
2
g
2
g
2
g
g
1
1
2
1
1
s,b
s,b
Top view
MAM125 - 1
Top view
MAM124
BF904R marking code: M06.
BF904 marking code: M04.
Fig.1 Simplified outline (SOT143B) and symbol.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
−
−
−
−
−
−
7
V
ID
drain current
30
mA
mW
°C
Ptot
Tj
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
200
150
30
yfs
22
−
25
2.2
25
2
mS
pF
Cig1-s
Crs
F
2.6
35
f = 1 MHz
−
fF
f = 800 MHz
−
−
dB
1999 May 17
2
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
ID
drain-source voltage
drain current
−
−
−
−
7
V
30
mA
mA
mA
IG1
IG2
Ptot
gate 1 current
±10
±10
gate 2 current
total power dissipation
BF904
see Fig.3
Tamb ≤ 50 °C; note 1
amb ≤ 40 °C; note 1
−
−
200
200
+150
150
mW
mW
°C
BF904R
T
Tstg
Tj
storage temperature
operating junction temperature
−65
−
°C
Note
1. Device mounted on a printed-circuit board.
MRA770
250
handbook, halfpage
P
tot
(mW)
200
BF904
150
100
50
BF904R
0
0
50
100
150
T
200
( C)
o
amb
Fig.3 Power derating curves.
1999 May 17
3
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
BF904
500
550
K/W
K/W
BF904R
Rth j-s
thermal resistance from junction to soldering point
note 2
BF904
Ts = 92 °C
Ts = 78 °C
290
360
K/W
K/W
BF904R
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
15
UNIT
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
V(F)S-G2
VG1-S(th)
VG2-S(th)
IDSX
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
VG2-S = VDS = 0; IG1-S = 10 mA
VG1-S = VDS = 0; IG2-S = 10 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 5 V; ID = 20 µA
VG1-S = VDS = 5 V; ID = 20 µA
6
V
6
15
1.5
1.5
1
V
0.5
0.5
0.3
0.3
8
V
V
V
1.2
13
V
VG2-S = 4 V; VDS = 5 V;
mA
RG1 = 120 kΩ; note 1
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
VG2-S = VDS = 0; VG1-S = 5 V
VG1-S = VDS = 0; VG2-S = 5 V
−
−
50
50
nA
nA
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.20.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
22
TYP.
25
MAX.
UNIT
yfs
Cig1-s
Cig2-s
Cos
Crs
forward transfer admittance pulsed; Tj = 25 °C
30
2.6
2
mS
pF
pF
pF
fF
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
f = 1 MHz
f = 1 MHz
f = 1 MHz
−
1
1
−
−
−
2.2
1.5
1.3
25
1
1.6
35
1.5
2.8
reverse transfer capacitance f = 1 MHz
noise figure f = 200 MHz; GS = 2 mS; BS = BSopt
f = 800 MHz; GS = GSopt; BS = BSopt
F
dB
dB
2
1999 May 17
4
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MRA769
MLD268
40
0
handbook, halfpage
gain
reduction
Y
fs
(dB)
10
(mS)
30
20
30
40
20
10
0
50
0
1
2
3
4
50
0
50
100
150
( C)
o
V
(V)
T
AGC
j
f = 50 MHz.
Fig.4 Transfer admittance as a function of the
junction temperature; typical values.
Fig.5 Typical gain reduction as a function of
the AGC voltage.
MRA771
MLD270
120
20
handbook, halfpage
V
V
= 4 V
S
3 V 2.5 V
2 V
unw
G2
I
D
(dB µV)
(mA)
110
15
100
90
10
5
1.5 V
1 V
80
0
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
V
2.0
(V)
gain reduction (dB)
G1
S
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ.
VDS = 5 V.
Fig.6 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.20.
Tj = 25 °C.
Fig.7 Transfer characteristics; typical values.
1999 May 17
5
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MLD269
MLD271
20
150
handbook, halfpage
handbook, halfpage
V
= 1.4 V
S
V
= 4 V
G2 S
I
G1
D
I
3.5 V
(mA)
G1
16
(µA)
1.3 V
3 V
100
1.2 V
1.1 V
12
8
2.5 V
2 V
1.0 V
0.9 V
50
4
0
0
0
0
2
4
6
8
10
(V)
0.5
1.0
1.5
2.0
2.5
(V)
V
V
G1
DS
S
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
Tj = 25 °C.
Fig.9 Gate 1 current as a function of gate 1
voltage; typical values.
Fig.8 Output characteristics; typical values.
MLD272
MLD273
16
40
handbook, halfpage
handbook, halfpage
I
y
D
fs
(mS)
(mA)
V
= 4 V
S
G2
12
30
3.5 V
3 V
8
4
0
20
2.5 V
10
0
2 V
0
10
20
30
40
50
(µA)
0
4
8
12
16
20
(mA)
I
I
G1
D
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
VDS = 5 V.
Tj = 25 °C.
Fig.10 Forward transfer admittance as a
function of drain current; typical values.
Fig.11 Drain current as a function of gate 1 current;
typical values.
1999 May 17
6
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MLD274
MLD275
20
12
handbook, halfpage
handbook, halfpage
R
= 47 kΩ 68 kΩ
G1
I
D
I
D
82 kΩ
(mA)
(mA)
15
100 kΩ
120 kΩ
150 kΩ
8
10
5
180 kΩ
220 kΩ
4
0
0
0
2
4
6
8
0
1
2
3
4
5
V
(V)
V
= V (V)
DS
GG
GG
VDS = 5 V; VG2-S = 4 V.
G1 = 120 kΩ (connected to VGG); Tj = 25 °C.
VG2-S = 4 V.
R
RG1 connected to VGG; Tj = 25 °C.
Fig.12 Drain current as a function of gate 1
supply voltage (= VGG); typical values;
see Fig.20.
Fig.13 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values; see Fig.20.
MLD276
MLB945
12
40
handbook, halfpage
handbook, halfpage
V
= 5 V
4.5 V
GG
I
G1
(µA)
I
D
V
= 5 V
GG
4 V
(mA)
30
3.5 V
3 V
4.5 V
8
4 V
3.5 V
3 V
20
10
4
0
0
0
0
2
4
6
2
4
6
V
(V)
S
V
(V)
S
G2
G2
VDS = 5 V; Tj = 25 °C.
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG).
RG1 = 120 kΩ (connected to VGG).
Fig.14 Drain current as a function of gate 2 voltage;
typical values; see Fig.20.
Fig.15 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.20.
1999 May 17
7
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MLD277
MLD278
2
10
3
2
3
10
rs
10
handbook, halfpage
y
y
ϕ
is
(mS)
rs
(deg)
(µS)
ϕ
rs
2
10
10
10
y
rs
b
is
1
10
10
g
is
1
1
10
1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
ID = 15 mA; Tamb = 25 °C.
Fig.16 Input admittance as a function of frequency;
typical values.
Fig.17 Reverse transfer admittance and phase as
a function of frequency; typical values.
MLD280
MLD279
2
2
10
fs
10
10
handbook, halfpage
y
os
(mS)
ϕ
y
fs
y
fs
fs
(deg)
b
g
(mS)
os
os
1
ϕ
10
10
1
2
10
10
1
1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
ID = 15 mA; Tamb = 25 °C.
Fig.18 Forward transfer admittance and phase as
a function of frequency; typical values.
Fig.19 Output admittance as a function of
frequency; typical values.
1999 May 17
8
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
V
AGC
R1
10 kΩ
C1
4.7 nF
C3 12 pF
R
L
L1
C2
DUT
50 Ω
≈450 nH
C4
4.7 nF
R
R2
GEN
R
G1
50 Ω
50Ω
4.7 nF
V
I
V
MLD171
GG
V
DS
Fig.20 Cross-modulation test set-up.
1999 May 17
9
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
Table 1 Scattering parameters: VDS =5 V; VG2-S = 4 V; ID = 10 mA
S11
S21
S12
S22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
0.989
0.985
0.976
0.958
0.942
0.918
0.899
0.876
0.852
0.823
0.800
0.750
0.719
0.682
0.642
0.602
0.547
0.596
0.682
0.771
0.793
−3.4
−8.3
2.420
2.414
2.368
2.301
2.251
2.170
2.080
2.001
1.924
1.829
1.747
1.621
1.535
1.424
1.349
1.283
1.130
1.018
0.979
0.804
0.541
175.7
169.1
158.8
148.5
138.8
129.5
120.7
112.1
103.2
94.7
0.000
0.001
0.003
0.004
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.008
0.010
0.013
0.018
0.014
0.040
0.077
0.120
0.149
79.9
78.3
0.993
0.992
0.987
0.980
0.974
0.966
0.958
0.951
0.944
0.937
0.933
0.928
0.930
0.924
0.928
0.928
0.887
0.837
0.778
0.629
0.479
−1.6
−3.9
200
−16.4
−24.1
−32.0
−39.3
−46.0
−52.6
−58.8
−64.9
−70.9
−82.4
−92.7
−102.5
−109.8
−116.5
−124.9
−128.7
−132.6
−142.5
−157.5
80.3
−7.8
300
73.7
−11.4
−15.2
−18.7
−22.2
−25.5
−28.9
−32.1
−35.2
−41.7
−48.4
−54.9
−62.9
−73.1
−81.0
−95.8
−109.6
−119.5
−119.9
400
70.7
500
67.2
600
67.8
700
68.6
800
72.9
900
78.7
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
86.5
88.3
70.7
120.5
139.8
137.8
156.8
175.1
172.6
−163.9
−164.0
178.8
158.3
54.6
39.4
22.5
1.1
−15.1
−49.1
−79.4
−116.2
−153.5
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 10 mA
Γopt
f
Fmin
(dB)
rn
50.40
(MHz)
(ratio)
(deg)
49.6
800
2.00
0.686
1999 May 17
10
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1999 May 17
11
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
3
4
Q
A
A
1
c
2
1
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.55
0.25
0.45
0.25
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-03-10
SOT143R
1999 May 17
12
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 17
13
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
NOTES
1999 May 17
14
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
NOTES
1999 May 17
15
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2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1999
SCA64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/00/05/pp16
Date of release: 1999 May 17
Document order number: 9397 750 05898
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