BF410D [NXP]
N-channel silicon field-effect transistors; N-沟道硅音响场效晶体管
| 型号： | BF410D |
| 厂家： | 
NXP |
| 描述： | N-channel silicon field-effect transistors |
| 文件： | 总6页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF410A to D
N-channel silicon field-effect
transistors
December 1990
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF410A to D
DESCRIPTION
PINNING - TO-92 VARIANT
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in a plastic TO-92 variant;
intended for applications up to the
VHF range.
1
2
3
= drain
= source
= gate
These FETs can be supplied in four
IDSS groups. Special features are the
low feedback capacitance and the low
noise figure. Thanks to these special
features the BF410 is very suitable for
applications such as the RF stages in
FM portables (type A), car radios
(type B) and mains radios (type C) or
the mixer stage (type D).
1
handbook, halfpage
2
3
d
s
g
MAM257
Fig.1 Simplified outline and symbol
QUICK REFERENCE DATA
Drain-source voltage
VDS
ID
max.
max.
20
30
V
Drain current (DC or average)
Total power dissipation
up to Tamb = 75 °C
mA
Ptot
max.
300
mW
BF410A
B
C
D
Drain current
VDS = 10 V; VGS = 0
min.
0.7
3.0
2.5
7.0
6
10 mA
18 mA
IDSS
max.
12
Transfer admittance
DS = 10 V; VGS = 0; f = 1 kHz
V
yfs
min.
2.5
4
6
7 mS
Feedback capacitance
VDS = 10 V; VGS = 0
Crs
Crs
typ.
typ.
0.5
0.5
−
− pF
VDS = 10 V; ID = 5 mA
−
−
0.5
0.5 pF
Noise figure at optimum source admittance
GS = 1 mS; −BS = 3 mS; f = 100 MHz
V
DS = 10 V; VGS = 0
F
F
typ.
typ.
1.5
1.5
−
− dB
VDS = 10 V; ID = 5 mA
−
−
1.5
1.5 dB
December 1990
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF410A to D
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
VDGO
ID
max.
max.
max.
max.
max.
20 V
20 V
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
30 mA
10 mA
300 mW
± IG
Ptot
Tstg
Tj
Total power dissipation up to Tamb = 75 °C
Storage temperature range
Junction temperature
−65 to +150 °C
max.
150 °C
THERMAL RESISTANCE
From junction to ambient in free air
Rth j-a
=
250 K/W
STATIC CHARACTERISTICS
Tamb = 25 °C
Gate cut-off current
BF410A
B
C
D
−VGS = 0.2 V; VDS = 0
Gate-drain breakdown voltage
IS = 0; −ID = 10 µA
−IGSS
max.
min.
10
10
10
10 nA
−V(BR)GDO
20
20
20
20
V
Drain current
VDS = 10 V; VGS = 0
min.
0.7
3.0
2.5
7.0
6
10 mA
18 mA
IDSS
max.
12
Gate-source cut-off voltage
ID = 10 µA; VDS = 10 V
−V(P)GS
typ.
0.8
1.5
2.2
3 V
December 1990
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF410A to D
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): VDS = 10 V; VGS = 0; Tamb = 25 °C for BF410A and B
VDS = 10 V; ID = 5 mA; Tamb = 25 °C for BF410C and D
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
BF410A
5
B
C
D
Cis
gis
max.
typ.
5
90
0.5
0.7
4.0
−
5
60
5 pF
50 µS
0.5 pF
0.7 pF
3.5 mS
7.0 mS
5.0 mS
3 pF
100
0.5
0.7
2.5
−
typ.
0.5
0.7
4.0
6.0
5.0
3
Feedback capacitance at f = 1 MHz
Transfer admittance at f = 1 kHz
Crs
max.
min.
min.
typ.
yfs
VGS = 0 instead of ID = 5 mA
yfs
yfs
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
3.5
3
5.5
3
Cos
gos
gos
max.
max.
typ.
60
80
55
100
70
120 µS
90 µS
35
Noise figure at optimum source admittance
GS = 1 mS; −BS = 3 mS; f = 100 MHz
F
typ.
1.5
1.5
1.5
1.5 dB
MDA277
MDA278
1.5
10
handbook, halfpage
handbook, halfpage
|y
|
fs
BF410D
C
rs
(mA/V)
(pF)
8
BF410C
BF410B
1
6
4
2
0
BF410A
0.5
typ
0
0
4
8
12
16
V
20
(V)
0
5
10
15
I
(mA)
D
DS
Fig.2 VGS = 0 for BF410A and BF410B;
ID = 5 mA for BF410C and BF410D;
f = 1 MHz; Tamb = 25 °C.
Fig.3 VDS 10 V; f = 1 kHz; Tamb = 25 °C; typical values.
December 1990
4
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF410A to D
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
L
2
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
L
2
1
UNIT
mm
A
b
b
c
D
d
E
e
e
L
1
1
max
max
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
2.54
1.27
2.5
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-04-14
SOT54 variant
TO-92
SC-43
December 1990
5
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF410A to D
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 1990
6
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