BF1118R,215 [NXP]
BF1118; BF1118R; BF1118W; BF1118WR - Silicon RF switches SOT-143 4-Pin;
| 型号： | BF1118R,215 |
| 厂家： | 
NXP |
| 描述： | BF1118; BF1118R; BF1118W; BF1118WR - Silicon RF switches SOT-143 4-Pin |
| 文件： | 总13页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF1118; BF1118R; BF1118W;
BF1118WR
Silicon RF switches
Rev. 3 — 14 November 2014
Product data sheet
1. Product profile
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low
loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
1.2 Features and benefits
Specially designed for low loss RF switching up to 1 GHz
1.3 Applications
Various RF switching applications such as:
Passive loop through for VCR tuner
Transceiver switching
1.4 Quick reference data
Table 1.
Symbol
Lins(on)
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
[1]
on-state insertion loss
RS = RL = 50 ; f 1 GHz;
-
-
2.5
dB
VSK = VDK = 0 V; IF = 0 mA
ISLoff
off-state isolation
RS = RL = 50 ; f 1 GHz;
30
-
-
dB
VSK = VDK = 3.3 V; IF = 1 mA
RDSon
VGS(p)
drain-source on-state resistance
gate-source pinch-off voltage
VKS = 0 V; ID = 1 mA
-
-
15
23.3
VDS = 1 V; ID = 20 A
2
2.44
V
[1] IF = diode forward current.
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BF1118 (SOT143B)
1
2
3
4
FET gate; diode anode
ꢃ
ꢂ
ꢀ
ꢃ
ꢁ
ꢂ
diode cathode
source
[1]
[1]
drain
ꢀ
ꢁ
ꢀꢀꢁDDLꢀꢂꢃ
BF1118R (SOT143R)
1
2
3
4
FET gate; diode anode
ꢂ
ꢀ
ꢃ
ꢂ
ꢀ
ꢃ
diode cathode
source
[1]
[1]
drain
ꢁ
ꢁ
ꢀꢀꢁDDLꢀꢂꢄ
BF1118W (SOT343N)
1
2
3
4
FET gate; diode anode
ꢃ
ꢂ
ꢃ
ꢁ
ꢂ
diode cathode
source
[1]
[1]
drain
ꢀ
ꢀꢀꢁDDLꢀꢂꢃ
ꢁ
ꢀ
ꢃ
BF1118WR (SOT343R)
1
2
3
4
FET gate; diode anode
ꢂ
ꢀ
ꢂ
ꢀ
ꢃ
diode cathode
source
[1]
[1]
drain
ꢁ
ꢀꢀꢁDDLꢀꢂꢄ
ꢁ
[1] Drain and source are interchangeable.
3. Ordering information
Table 3.
Type number Package
Name Description
Ordering information
Version
BF1118
-
-
-
-
plastic surface-mounted package; 4 leads
SOT143B
SOT143R
SOT343N
SOT343R
BF1118R
BF1118W
BF1118WR
plastic surface-mounted package; reverse pinning; 4 leads
plastic surface-mounted package; 4 leads
plastic surface-mounted package; reverse pinning; 4 leads
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
2 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
4. Marking
Table 4.
Marking
Type number
BF1118
Marking code
VC%
VD%
VB
BF1118R
BF1118W
BF1118WR
VC
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
FET
VDS
VSD
VDG
VSG
ID
Parameter
Conditions
Min
Max
Unit
drain-source voltage
source-drain voltage
drain-gate voltage
source-gate voltage
drain current
-
-
-
-
-
3
V
3
V
7
V
7
V
10
mA
Diode
VR
reverse voltage
forward current
-
-
35
V
IF
100
mA
FET and diode
Tstg
Tj
storage temperature
junction temperature
65
+150 C
150 C
-
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Typ
Unit
K/W
[1]
thermal resistance from junction
to solder point
250
[1] Soldering point of FET gate and diode anode lead.
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
3 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
7. Static characteristics
Table 7.
Static characteristics
Tj = 25 C unless otherwise specified.
Symbol
FET
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)GSS
VGS(p)
IDSX
gate-source breakdown voltage
gate-source pinch-off voltage
drain cut-off current
VDS = 0 V; IGS = 0.1 mA
VDS = 1 V; ID = 20 A
VGS = 3.3 V; VDS = 1 V
VGS = 3.3 V; VDS = 0 V
VGS = 0 V; ID = 1 mA
-
-
-
-
-
-
7
V
2
-
2.44
16
V
A
nA
IGSS
gate leakage current
-
100
23.3
RDSon
Diode
VF
drain-source on-state resistance
15
forward voltage
reverse current
IF = 10 mA
-
-
-
-
-
-
1
V
IR
VR = 25 V
50
1
nA
A
VR = 20 V; Tamb = 75 C
8. Dynamic characteristics
Table 8.
Dynamic characteristics
Common cathode; Tamb = 25 C.
Symbol Parameter
FET and diode
Conditions
Min
Typ
Max
Unit
[1]
Lins(on)
on-state insertion loss
off-state isolation
VSK = VDK = 0 V; IF = 0 mA
RS = RL = 50 ; f 1 GHz
RS = RL = 50 ; f = 1 GHz
RS = RL = 75 ; f 1 GHz
VSK = VDK = 3.3 V; IF = 1 mA
RS = RL = 50 ; f 1 GHz
RS = RL = 50 ; f = 1 GHz
RS = RL = 75 ; f 1 GHz
VKS = 0 V; ID = 1 mA
-
-
-
-
2.5
-
dB
dB
dB
1.5
-
2.5
ISLoff
30
-
-
-
dB
dB
dB
35
-
-
30
-
-
RDSon
Ci
drain-source on-state resistance
input capacitance
15
23.3
[2]
[2]
f = 1 MHz
VSK = VDK = 3.3 V; IF = 1 mA
VSK = VDK = 0 V; IF = 0 mA
f = 1 MHz
-
-
1
-
pF
pF
0.65
0.9
Co
output capacitance
VSK = VDK = 3.3 V; IF = 1 mA
VSK = VDK = 0 V; IF = 0 mA
-
-
1
-
pF
pF
0.65
0.9
Diode
Cd
diode capacitance
f = 1 MHz; VR = 0 V
-
-
1.1
-
-
pF
[3]
rD
diode forward resistance
IF = 2 mA; f = 100 MHz
0.9
[1] IF = diode forward current.
[2] Ci is the series connection of CGS and CGK; Co is the series connection of CGD and CGK
[3] Guaranteed on AQL basis; inspection level S4, AQL 1.0.
.
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
4 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
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Fig 1. On-state insertion loss as a function of
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Fig 3. Test circuit
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
5 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
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BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
6 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
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Fig 5. Package outline SOT143R
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
7 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
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Fig 6. Package outline SOT343N
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
8 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
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Fig 7. Package outline SOT343R
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
9 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 9.
Acronym
Abbreviations
Description
AQL
MOSFET
RF
Acceptable Quality Level
Metal-Oxide Semiconductor Field-Effect Transistor
Radio Frequency
S4
Special inspection level 4
VCR
Video Cassette Recorder
12. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status Change notice Supersedes
BF1118_1118R_1118W_1118WR v.3
20141114
Product data sheet
-
BF1118_1118R_1118W_
1118WR v.2
Modifications:
• Section 10 on page 10: The information has been moved from Section 1.1 to
this section.
• Table 7 on page 4: The minimum value for V(BR)GSS has been removed and a
maximum value has been set instead.
BF1118_1118R_1118W_1118WR v.2
BF1118_1118R_1118W_1118WR v.1
20120111
20100629
Product data sheet
Product data sheet
-
-
BF1118_1118R_1118W_
1118WR v.1
-
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
10 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
13.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
11 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 14 November 2014
12 of 13
BF1118(R); BF1118W(R)
NXP Semiconductors
Silicon RF switches
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Handling information. . . . . . . . . . . . . . . . . . . . 10
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 November 2014
Document identifier: BF1118_1118R_1118W_1118WR
相关型号：
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