BC69PA [NXP]
20 V, 2 A PNP medium power transistors; 20 V ，2 A PNP中功率晶体管
| 型号： | BC69PA |
| 厂家： | 
NXP |
| 描述： | 20 V, 2 A PNP medium power transistors |
| 文件： | 总24页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
Rev. 7 — 12 October 2011
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number[1]
Package
NXP
NPN complement
JEITA
SC-73
SC-62
-
JEDEC
BCP69
BC869
BC69PA
SOT223
SOT89
SOT1061
-
BCP68
BC868
BC68PA
TO-243
-
[1] Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Power management
MOSFET drivers
Amplifiers
High-side switches
Battery-driven devices
1.4 Quick reference data
Table 2.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
20
2
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current
-
-
-
-
-
-
A
ICM
peak collector current
single pulse; tp 1 ms
3
A
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
Table 2.
Symbol Parameter
hFE DC current gain
Quick reference data …continued
Conditions
Min
Typ
Max
Unit
[1]
[1]
[1]
VCE = 1 V;
IC = 500 mA
85
-
375
hFE selection -16
VCE = 1 V;
IC = 500 mA
100
160
-
-
250
375
hFE selection -25
VCE = 1 V;
IC = 500 mA
[1] Pulse test: tp 300 s; = 0.02.
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
SOT223
1
2
3
4
base
2, 4
4
collector
emitter
collector
1
1
2
3
3
sym028
SOT89
1
2
3
emitter
collector
base
2
3
3
2
3
1
1
006aaa231
SOT1061
1
2
3
base
3
emitter
collector
1
2
sym013
1
2
Transparent top view
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
2 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
3. Ordering information
Table 4.
Ordering information
Type number[1] Package
Name
Description
Version
BCP69
BC869
BC69PA
SC-73
SC-62
plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads
SOT89
HUSON3 plastic thermal enhanced ultra thin small outline
SOT1061
package; no leads; 3 terminals; body 2 2 0.65 mm
[1] Valid for all available selection groups.
4. Marking
Table 5.
Marking codes
Type number
BCP69
Marking code
BCP69
BCP69/16
BCP69/25
CEC
BCP69-16
BCP69-25
BC869
BC869-16
BC869-25
BC69PA
CGC
CHC
B3
BC69-16PA
BC69-25PA
BM
BN
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
3 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
32
20
5
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
-
-
-
V
open collector
V
2
A
ICM
peak collector current
single pulse;
3
A
tp 1 ms
IB
base current
-
-
0.4
0.4
A
A
IBM
peak base current
single pulse;
tp 1 ms
Ptot
total power dissipation
BCP69
Tamb 25 C
[1]
[2]
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[4]
[5]
-
0.65
1.00
1.35
0.50
0.95
1.35
0.42
0.83
1.10
0.81
1.65
150
W
W
W
W
W
W
W
W
W
W
W
C
C
C
-
-
BC869
-
-
-
BC69PA
-
-
-
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
55
65
+150
+150
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
4 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac674
006aac675
1.5
1.5
(1)
(1)
P
tot
P
tot
(W)
(W)
(2)
(3)
(2)
(3)
1.0
1.0
0.5
0.5
0.0
–75
0.0
–75
–25
25
75
125
175
(°C)
–25
25
75
125
175
(°C)
T
T
amb
amb
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT223
Fig 2. Power derating curves SOT89
006aac676
2.0
P
(W)
tot
(1)
(2)
1.5
1.0
0.5
0.0
(3)
(4)
(5)
–75
–25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3. Power derating curves SOT1061
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
5 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to ambient
in free air
[1]
[2]
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[4]
[5]
BCP69
BC869
BC69PA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
192
125
93
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
250
132
93
298
151
114
154
76
Rth(j-sp)
thermal resistance from
junction to solder point
BCP69
BC869
BC69PA
-
-
-
-
-
-
16
16
20
K/W
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
6 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac677
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
006aac678
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
7 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac679
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
006aac680
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
2
10
0.33
0.2
0.1
0.05
0.02
10
0.01
1
0
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
8 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac681
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac682
3
10
Z
th(j-a)
(K/W)
2
duty cycle = 1
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
1
0
0.01
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
9 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac683
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
1
0
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, single-sided copper, standard footprint
Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac684
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0
0.01
1
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
10 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac685
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
1
0
0.01
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac686
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, 4-layer copper, standard footprint
Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
11 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac687
3
10
Z
th(j-a)
(K/W)
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
10
0.1
0.05
0.02
1
0.01
0
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
12 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
100 nA
10 A
Unit
ICBO
collector-base cut-off VCB = 25 V; IE = 0 A
-
-
-
-
current
VCB = 25 V; IE = 0 A;
Tj = 150 C
IEBO
hFE
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
-
100 nA
DC current gain
VCE = 10 V
IC = 5 mA
50
-
DC current gain
VCE = 1 V
[1]
[1]
[1]
IC = 500 mA
85
60
40
-
-
-
375
IC = 1 A
-
-
IC = 2 A
DC current gain
hFE selection -16
hFE selection -25
VCE = 1 V
[1]
[1]
[1]
[1]
[1]
[1]
IC = 500 mA
100
160
-
-
-
-
250
375
IC = 500 mA
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 100 mA
IC = 2 A; IB = 200 mA
VCE = 10 V; IC = 5 mA
VCE = 1 V; IC = 1 A
0.5
0.6
0.7
1
V
V
VBE
base-emitter voltage
-
-
-
-
V
-
V
Cc
fT
collector capacitance VCB = 10 V; IE = ie = 0 A;
28
-
pF
f = 1 MHz
transition frequency
VCE = 5 V; IC = 50 mA;
40
140
-
MHz
f = 100 MHz
[1] Pulse test: tp 300 s; = 0.02.
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
13 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac697
006aab403
300
−2.4
C
I
(A)
h
FE
(1)
(2)
−2.0
I
(mA) = −18.0
B
−16.2
−12.6
−14.4
−10.8
200
−1.6
−1.2
−0.8
−9.0
−5.4
−7.2
−3.6
100
(3)
−0.4
−1.8
0
0
-10
-4
-3
-2
-1
-10
-10
-10
-1
-10
0
−1
−2
−3
−4
−5
I
(A)
V
CE
(V)
C
VCE = 1 V
amb = 100 C
Tamb = 25 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 15. hFE selection -16: DC current gain as a
function of collector current; typical values
Fig 16. hFE selection -16: collector current as a
function of collector-emitter voltage; typical
values
006aac698
006aac699
-1.2
-1
V
V
(V)
CEsat
(V)
BE
(1)
-1
-10
(1)
-0.8
(2)
(2)
(3)
-2
(3)
-0.4
-10
-10
-3
0.0
-10
-1
2
3
4
-1
2
3
4
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
VCE = 1 V
IC/IB = 10
(1) Tamb = 55 C
(2) Tamb = 25 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3)
Tamb = 100 C
(3) Tamb = 55 C
Fig 17. hFE selection -16: base-emitter voltage as a
function of collector current; typical values
Fig 18. hFE selection -16: collector-emitter saturation
voltage as a function of collector current;
typical values
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
14 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac707
006aab404
400
−2.4
I
C
(1)
h
(A)
FE
I
(mA) = −12.0
−2.0
B
−10.8
−8.4
300
(2)
−9.6
−7.2
−1.6
−1.2
−0.8
−0.4
0
−6.0
−3.6
200
−4.8
−2.4
(3)
100
−1.2
0
-10
-4
-3
-2
-1
-10
-10
-10
-1
-10
0
−1
−2
−3
−4
−5
I
(A)
V
CE
(V)
C
VCE = 1 V
Tamb = 25 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3)
Tamb = 55 C
Fig 19. hFE selection -25: DC current gain as a
function of collector current; typical values
Fig 20. hFE selection -25: collector current as a
function of collector-emitter voltage; typical
values
006aac708
006aac709
-1.2
–1
V
V
(V)
CEsat
(V)
BE
(1)
–1
-0.8
–10
(1)
(2)
(2)
(3)
–2
-0.4
–10
(3)
–3
0.0
-10
–10
-1
2
3
4
–1
2
3
4
-1
-10
-10
-10
-10
(mA)
–10
–1
–10
–10
–10
–10
I (mA)
C
I
C
VCE = 1 V
IC/IB = 10
(1) Tamb = 55 C
(1) Tamb = 100 C
(2)
Tamb = 25 C
(2)
Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 55 C
Fig 21. hFE selection -25: base-emitter voltage as a
function of collector current; typical values
Fig 22. hFE selection -25: collector-emitter saturation
voltage as a function of collector current;
typical values
BCP69_BC869_BC69PA
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Product data sheet
Rev. 7 — 12 October 2011
15 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3 3.7
6.7 3.3
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig 23. Package outline SOT223 (SC-73)
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
1
2
3
0.53
0.40
0.48
0.35
0.44
0.23
1.5
3
Dimensions in mm
06-08-29
Fig 24. Package outline SOT89 (SC-62/TO-243)
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
16 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
1.3
0.65
max
0.35
0.25
0.45
0.35
1
2
1.05
0.95
2.1
1.1
0.9
1.9
0.3
0.2
3
1.6
1.4
2.1
1.9
Dimensions in mm
09-11-12
Fig 25. Package outline SOT1061 (HUSON3)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type
number[2]
Package
Description
Packing quantity
1000 3000 4000
BCP69
BC869
SOT223
SOT89
8 mm pitch, 12 mm tape and reel
8 mm pitch, 12 mm tape and reel; T1
8 mm pitch, 12 mm tape and reel; T3
4 mm pitch, 8 mm tape and reel
-115
-115
-146
-
-
-135
[3]
[4]
-
-135
-
-
-
BC69PA
SOT1061
-115
[1] For further information and the availability of packing methods, see Section 14.
[2] Valid for all available selection groups.
[3] T1: normal taping
[4] T3: 90 rotated taping
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
17 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
11. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig 26. Reflow soldering footprint SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
8.7
occupied area
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig 27. Wave soldering footprint SOT223 (SC-73)
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
18 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
4.75
2.25
2
1.9
1.2
0.2
solder lands
0.85
1.7
solder resist
1.2
4.6
4.85
solder paste
0.5
occupied area
1
1.1
(3×)
(2×)
Dimensions in mm
1.5
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig 28. Reflow soldering footprint SOT89 (SC-62/TO-243)
6.6
2.4
3.5
solder lands
7.6
0.5
solder resist
occupied area
1.8
(2×)
Dimensions in mm
preferred transport direction during soldering
1.9
1.9
1.5
(2×)
0.7
5.3
sot089_fw
Fig 29. Wave soldering footprint SOT89 (SC-62/TO-243)
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
19 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
2.1
1.3
0.5 (2×)
0.4 (2×)
0.5 (2×) 0.6 (2×)
1.05
0.6
0.55
2.3
0.25
1.1
1.2
0.25
0.25
0.4
0.5
1.6
1.7
Dimensions in mm
solder paste = solder lands
solder resist
occupied area
sot1061_fr
Reflow soldering is the only recommended soldering method.
Fig 30. Reflow soldering footprint SOT1061 (HUSON3)
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
20 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
12. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Product data sheet
Change notice Supersedes
BCP69_BC869_BC69PA v.7 20111012
-
BC869_6
BCP69_6
Modifications:
• The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BC69PA added
• Type number BCP69-16/DG and BCP69-16/IN removed
• Section 1 “Product profile”: updated
• Section 2 “Pinning information”: updated
• Section 3 “Ordering information”: updated
• Section 4 “Marking”: updated
• Section 10 “Packing information”:updated
• Table 6, 7 and 8: updated according to latest measurements
• Figure 1, 15 to 18 updated
• Figure 2 to 14, 24 to 25, 28 to 30: added
BC869_6
20041108
20031202
19990408
19980716
19970401
20081202
20031125
20021115
19990408
19970312
Product data sheet
Product specification
Product specification
Product specification
Product specification
Product data sheet
Product specification
Product specification
Product specification
Product specification
-
-
-
-
-
-
-
-
-
-
BC869_5
BC869_4
BC869_3
BC869_CNV_2
-
BC869_5
BC869_4
BC869_3
BC869_CNV_2
BCP69_6
BCP69_5
BCP69_4
BCP69_3
BCP69_CNV_2
-
BCP69_5
BCP69_4
BCP69_3
BCP69_CNV_2
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
21 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
22 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
23 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 13
Test information. . . . . . . . . . . . . . . . . . . . . . . . 16
Quality information . . . . . . . . . . . . . . . . . . . . . 16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Packing information . . . . . . . . . . . . . . . . . . . . 17
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 21
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 22
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 23
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 October 2011
Document identifier: BCP69_BC869_BC69PA
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