BB212 [NXP]

AM variable capacitance double diode; AM变容双二极管
BB212
型号: BB212
厂家: NXP    NXP
描述:

AM variable capacitance double diode
AM变容双二极管

二极管 变容二极管 测试
文件: 总6页 (文件大小:51K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
lfpage  
BB212  
AM variable capacitance double  
diode  
1996 May 03  
Product specification  
Supersedes data of April 1992  
File under Discrete Semiconductors, SC01  
Philips Semiconductors  
Product specification  
AM variable capacitance double diode  
BB212  
FEATURES  
PINNING  
Leaded plastic package  
C8: 19 pF; ratio: 29.  
PIN  
DESCRIPTION  
1
2
3
anode (a1)  
common cathode  
anode (a2)  
APPLICATIONS  
Electronic tuning in AM radio  
applications  
VCO.  
handbook, halfpage  
1
2
3
1
3
DESCRIPTION  
The BB212 is a variable capacitance  
double diode with a common cathode,  
fabricated in planar technology, and  
encapsulated in the TO-92 variant  
leaded plastic package.  
MAM223  
2
Fig.1 Simplified outline (TO-92 variant) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL PARAMETER  
Per diode  
MIN.  
MAX.  
UNIT  
VR  
IF  
continuous reverse voltage  
12  
V
100  
mA  
°C  
continuous forward current  
storage temperature  
Tstg  
Tj  
+100  
+85  
55  
55  
operating junction temperature  
°C  
1996 May 03  
2
Philips Semiconductors  
Product specification  
AM variable capacitance double diode  
BB212  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C; unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Per diode  
IR  
reverse current  
VR = 10 V; see Fig.3  
nA  
nA  
50  
VR = 10 V; Tj = 85 °C; see Fig.3  
f = 500 MHz; note 1  
see Figs 2 and 4  
300  
2.5  
rs  
diode series resistance  
diode capacitance  
Cd  
VR = 0.5 V; f = 1 MHz  
VR = 3 V; f = 1 MHz  
VR = 5.5 V; f = 1 MHz  
VR = 8 V; f = 1 MHz  
f = 1 MHz  
620  
280  
90  
500  
140  
40  
pF  
pF  
pF  
pF  
22  
capacitance ratio  
22.5  
Cd (0.5V)  
---------------------  
Cd (8V)  
Note  
1. VR is the value at which Cd = 500 pF.  
MATCHING PROPERTIES  
ADDITIONAL TOLERANCE (see Fig.5)  
The capacitance of the two diodes in their common  
package may differ within certain limits. The total, relative  
capacitance difference between the two diodes in one  
package may be found in Fig.5. The anode a1 or a2 with  
the higher capacitance at VR = 3 V, is identified by a white  
dot.  
In the range of VR = 0.5 V to 8 V the following additional  
tolerances are valid.  
C1  
C1  
S =  
VR  
0.5 V  
------  
C2  
------  
C2  
S < 2% for VR = 0.5 to 3 V  
S < 4% for VR = 3 to 5.5 V  
S < 6% for VR = 5.5 to 8 V.  
BASIC TOLERANCE  
The relative deviation of the capacitance value at  
VR = 0.5 V is maximum 3.5%.  
C1 is the capacitance of a1 when a1 > a2.  
C1 is the capacitance of a2 when a2 > a1.  
C1 (0.5V) C2 (0.5 V)  
k =  
= <3.5%  
------------------------------------------------------------  
C2 (0.5 V)  
1996 May 03  
3
Philips Semiconductors  
Product specification  
AM variable capacitance double diode  
BB212  
GRAPHICAL DATA  
MGC814  
750  
C
d
(pF)  
500  
250  
0
10  
1  
1
10  
V
(V)  
R
f = 1 MHz.  
Fig.2 Diode capacitance as a function of reverse voltage; typical values.  
MLC815  
MGC809  
3
10  
3
10  
handbook, halfpage  
handbook, halfpage  
I
TC  
d
R
(nA)  
1  
(K  
)
4
2
10  
10  
5
10  
10  
0
1
2
10  
1
10  
10  
20  
40  
60  
80  
100  
V
(V)  
o
R
T ( C)  
j
Fig.4 Temperature coefficient of diode  
Fig.3 Reverse current as a function of junction  
temperature; maximum values.  
capacitance as a function of reverse  
voltage; typical values.  
1996 May 03  
4
Philips Semiconductors  
Product specification  
AM variable capacitance double diode  
BB212  
MGC811  
20  
handbook, halfpage  
S
(%)  
16  
12  
8
4
0
0
2
4
6
8
10  
V
(V)  
R
Fig.5 Capacitance matching as a function of  
reverse voltage; typical values.  
1996 May 03  
5
Philips Semiconductors  
Product specification  
AM variable capacitance double diode  
BB212  
PACKAGE OUTLINE  
0.40  
min  
4.2 max  
5.2 max  
12.7 min  
1.6  
0.48  
0.40  
1
2
3
4.8  
max  
2.54  
0.66  
0.56  
(1)  
MBC014 - 1  
2.0 max  
Dimensions in mm.  
(1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
Fig.6 TO-92 variant.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 May 03  
6

相关型号:

BB212-AMMOPAK

DIODE SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
NXP

BB212-TAPE-REEL

DIODE SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
NXP

BB2135

CONN QC RCPT 14-16AWG 0.110
MOLEX

BB215

UHF variable capacitance diode
NXP

BB215

UHF Variable Capacitance Diode
KEXIN

BB215

Excellent linearity Small hermetically sealed glass SMD package Low series resistance.
TYSEMI

BB215TRL

DIODE UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
NXP

BB215TRL

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, Silicon
YAGEO

BB215TRL13

DIODE UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
NXP

BB215TRL13

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, Silicon
YAGEO

BB219

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, Silicon
YAGEO

BB219

DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
NXP