BB159 [NXP]
UHF variable capacitance diode; 超高频可变电容二极管
| 型号： | BB159 |
| 厂家： | 
NXP |
| 描述： | UHF variable capacitance diode |
| 文件： | 总4页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
BB159
UHF variable capacitance diode
1996 Oct 03
Product specification
Supersedes data of 1996 May 03
Philips Semiconductors
Product specification
UHF variable capacitance diode
BB159
FEATURES
• Excellent linearity
handbook, 4 columns
k
a
• Very small plastic SMD package
• C28: 2.1 pF; ratio 9
• Low series resistance.
MAM130
Marking code: PJ.
APPLICATIONS
Cathode side indicated by a bar.
• Electronic tuning in UHF television
Fig.1 Simplified outline (SOD323) and symbol.
tuners
• VCO.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
DESCRIPTION
The BB159 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
SYMBOL
PARAMETER
MIN.
MAX.
30
UNIT
VR
IF
continuous reverse voltage
continuous forward current
storage temperature
V
−
−
20
mA
°C
Tstg
Tj
+150
+125
−55
−55
The matched type, BB149 has the
same specification.
operating junction temperature
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
reverse current
CONDITIONS
MIN. TYP. MAX. UNIT
IR
VR = 30 V; see Fig.3
−
−
−
−
−
−
−
nA
nA
Ω
10
VR = 30 V; Tj = 85 °C; see Fig.3
f = 470 MHz; note 1
−
200
0.75
19.5
2.25
10
rs
diode series resistance
diode capacitance
−
Cd
VR = 1 V; f = 1 MHz; see Figs 2 and 4
VR = 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
18
1.9
8.2
pF
pF
capacitance ratio
capacitance ratio
Cd (1V)
--------------------
Cd (28V)
f = 1 MHz
1.2
−
−
C d (19V)
--------------------
Cd (28V)
Note
1. VR is the value at which Cd = 9 pF.
1996 Oct 03
2
Philips Semiconductors
Product specification
UHF variable capacitance diode
BB159
GRAPHICAL DATA
MLC391
30
C
d
(pF)
20
10
0
1
2
10
1
10
10
V
(V)
R
f = 1 MHz; Tj = 25 °C.
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MLC815
MLC816
3
10
3
10
handbook, halfpage
handbook, halfpage
TC
d
I
R
−1
(K
)
(nA)
4
2
10
10
5
10
10
0
1
2
10
50
100
1
10
10
o
V
(V)
T
( C)
R
j
Tj = 0 to 85 °C.
Fig.4 Temperature coefficient of diode
capacitance as a function of
Fig.3 Reverse current as a function of junction
temperature; maximum values.
reverse voltage; typical values.
1996 Oct 03
3
Philips Semiconductors
Product specification
UHF variable capacitance diode
BB159
PACKAGE OUTLINE
0.55
0.40
1.00
0.25
max
0.10
0.05
max
MBC672 - 1
A
1.35
1.15
0.40
0.25
1.8
1.6
2.7
2.3
0.2
A
M
Dimensions in mm.
The bar indicates the cathode.
Fig.5 SOD323.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 03
4
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