BAV20,143 [NXP]
BAV20; BAV21 - General purpose diodes AXIAL 2-Pin;
| 型号： | BAV20,143 |
| 厂家： | 
NXP |
| 描述： | BAV20; BAV21 - General purpose diodes AXIAL 2-Pin 二极管 |
| 文件： | 总10页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAV20; BAV21
General purpose diodes
Product data sheet
1999 May 25
Supersedes data of 1996 Sep 17
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 150 V, 200 V
• Repetitive peak reverse voltage:
max. 200 V, 250 V
handbook, halfpage
k
a
• Repetitive peak forward current:
max. 625 mA.
MAM246
APPLICATIONS
• General purposes in industrial
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
1999 May 25
2
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BAV20
−
−
200
V
V
BAV21
250
VR
continuous peak reverse voltage
BAV20
−
−
−
−
150
200
250
625
V
V
BAV21
IF
continuous forward current
repetitive peak forward current
see Fig.2; note 1
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 μs
t = 100 μs
t = 1 s
−
−
−
−
9
A
3
A
1
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
400
+175
175
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1999 May 25
3
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3
IF = 100 mA
−
−
1.0
V
V
IF = 200 mA
1.25
IR
reverse current
see Fig.5
VR = VRmax
−
−
−
−
100
100
5
nA
μA
pF
ns
VR = VRmax; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured
at IR = 3 mA; see Fig.8
50
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
VALUE
240
UNIT
K/W
K/W
Rth j-a
375
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 25
4
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
GRAPHICAL DATA
MBG449
MBG459
300
600
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
200
400
(1)
(2)
(3)
100
200
0
0
0
o
0
100
200
1
2
T
( C)
V
(V)
amb
F
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(μs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 25
5
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
MGD009
3
MGD005
10
1.6
handbook, halfpage
handbook, halfpage
I
R
C
d
(μA)
(pF)
1.4
2
10
10
1
1.2
1.0
−1
10
−2
10
0.8
0
0
100
200
o
10
20
T ( C)
j
V
(V)
R
VR = VRmax
.
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
MGL588
300
handbook, halfpage
V
R
(V)
(1)
200
(2)
100
0
o
0
100
200
T
( C)
amb
(1) BAV21.
(2) BAV20.
Fig.7 Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
1999 May 25
6
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 3 mA.
Fig.8 Reverse recovery voltage test circuit and waveforms.
1999 May 25
7
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)
0
1
2 mm
G
D
L
b
1
UNIT
max.
min.
max.
max.
scale
mm
0.56
1.85
4.25
25.4
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
DO-35
EIAJ
97-06-09
SOD27
A24
SC-40
1999 May 25
8
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
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of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 May 25
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/03/pp10
Date of release: 1999 May 25
Document order number: 9397 750 05895
相关型号：
BAV20-AP
Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
MCC
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