BAT85 [NXP]

Schottky barrier diode; 肖特基二极管
BAT85
型号: BAT85
厂家: NXP    NXP
描述:

Schottky barrier diode
肖特基二极管

肖特基二极管
文件: 总6页 (文件大小:34K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BAT85  
Schottky barrier diode  
1996 Mar 20  
Product specification  
Supersedes data of February 1992  
Philips Semiconductors  
Product specification  
Schottky barrier diode  
BAT85  
FEATURES  
DESCRIPTION  
Low forward voltage  
Guard ring protected  
Planar Schottky barrier diode with an integrated protection ring against static  
discharges, encapsulated in a hermetically-sealed subminiature SOD68  
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.  
Hermetically-sealed leaded glass  
package.  
APPLICATIONS  
k
a
handbook, halfpage  
Ultra high-speed switching  
Voltage clamping  
MAM193  
Protection circuits  
Blocking diodes.  
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
continuous reverse voltage  
continuous forward current  
average forward current  
CONDITIONS  
MIN.  
MAX.  
30  
UNIT  
VR  
V
IF  
200  
200  
mA  
mA  
IF(AV)  
PCB mounting, lead length = 4 mm;  
VRWM = 25 V; a = 1.57; δ = 0.5;  
Tamb = 50 °C; see Fig.2  
IFRM  
IFSM  
Tstg  
Tj  
repetitive peak forward current  
non-repetitive peak forward current  
storage temperature  
tp 1 s; δ 0.5  
tp 10 ms  
300  
5
mA  
A
+150  
125  
+125  
°C  
°C  
°C  
65  
junction temperature  
Tamb  
operating ambient temperature  
65  
1996 Mar 20  
2
Philips Semiconductors  
Product specification  
Schottky barrier diode  
BAT85  
ELECTRICAL CHARACTERISTICS  
T
amb = 25 °C unless otherwise specified.  
SYMBOL PARAMETER  
forward voltage  
CONDITIONS  
MAX.  
UNIT  
VF  
see Fig.3  
IF = 0.1 mA  
IF = 1 mA  
240  
mV  
320  
400  
500  
800  
2
mV  
mV  
mV  
mV  
µA  
IF = 10 mA  
IF = 30 mA  
IF = 100 mA  
VR = 25 V; see Fig.4  
IR  
trr  
reverse current  
reverse recovery time  
when switched from IF = 10 mA to  
IR = 10 mA; RL = 100 ;  
4
ns  
measured at IR = 1 mA; see Fig.6  
Cd  
diode capacitance  
f = 1 MHz; VR = 1 V; see Fig.5  
10  
pF  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient note 1  
CONDITIONS  
VALUE  
320  
UNIT  
K/W  
Rth j-a  
Note  
1. Refer to SOD68 standard mounting conditions.  
1996 Mar 20  
3
Philips Semiconductors  
Product specification  
Schottky barrier diode  
BAT85  
GRAPHICAL DATA  
MSA892  
MRA540  
3
250  
10  
handbook, halfpage  
handbook, halfpage  
I
F(AV)  
I
(1) (2) (3)  
F
(mA)  
200  
(mA)  
2
10  
150  
100  
50  
10  
(1)  
1
(2) (3)  
1
0
10  
0
50  
100  
150  
0
0.4  
0.8  
1.2  
o
V
(V)  
T
( C)  
F
amb  
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
Fig.2 Derating curve.  
MGC681  
MGC682  
5
12  
10  
handbook, halfpage  
handbook, halfpage  
R
(nA)  
I
C
(1)  
(2)  
d
(pF)  
4
10  
3
8
10  
2
10  
10  
1
4
0
(3)  
1  
10  
0
10  
20  
30  
0
10  
20  
30  
V
(V)  
V
(V)  
R
R
(1) Tamb = 85 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 40 °C.  
f = 1 MHz.  
Fig.4 Reverse current as a function of reverse  
voltage; typical values.  
Fig.5 Diode capacitance as a function of reverse  
voltage; typical values.  
1996 Mar 20  
4
Philips Semiconductors  
Product specification  
Schottky barrier diode  
BAT85  
andbook, halfpage  
I
F
dI  
F
dt  
t
10%  
90%  
Q
r
I
R
t
MRC129 - 1  
f
Fig.6 Reverse recovery definitions.  
1996 Mar 20  
5
Philips Semiconductors  
Product specification  
Schottky barrier diode  
BAT85  
PACKAGE OUTLINE  
0.55  
max  
1.6  
max  
3.04  
max  
25.4 min  
25.4 min  
MSA212 - 1  
Dimensions in mm.  
Cathode indicated by a coloured band.  
The diodes are type branded.  
Fig.7 SOD68; (DO-34).  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Mar 20  
6

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