BAT854CW [NXP]
Schottky barrier (double) diodes; 肖特基势垒(双)二极管型号: | BAT854CW |
厂家: | NXP |
描述: | Schottky barrier (double) diodes |
文件: | 总8页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
BAT854W series
Schottky barrier (double) diodes
Product specification
2001 Feb 27
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
FEATURES
PINNING
PIN
• Very low forward voltage
• Very low reverse current
• Guard ring protected
SYMBOL
3
BAT854W
1
2
n.c.
1
2
3
a
• Very small SMD plastic package.
MLC357
n.c.
k
Fig.2 BAT854W single diode
configuration (symbol).
APPLICATIONS
BAT854AW
• Ultra high-speed switching
• Voltage clamping
1
2
3
k1
k2
• Protection circuits
• Blocking diodes
a1,a2
3
BAT854CW
• Low power consumption
applications (e.g. hand-held
applications).
1
2
3
a1
1
2
a2
MLC360
k1, k2
Fig.3 BAT854AW diode
configuration (symbol).
BAT854SW
DESCRIPTION
1
2
3
a1
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
SMD plastic package. Single diodes
and double diodes with different
pinning are available.
k2
k1, a2
3
1
2
MARKING
MLC359
MARKING
TYPE NUMBER
3
CODE
Fig.4 BAT854CW diode
configuration (symbol).
BAT854W
81
82
83
84
BAT854AW
BAT854CW
BAT854SW
1
2
3
MBC870
Top view
1
2
MLC358
Fig.1 Simplified outline
SOT323 and pin
Fig.5 BAT854SW diode
configuration (symbol).
configuration.
2001 Feb 27
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
40
V
IF
200
300
1
mA
mA
A
IFRM
IFSM
tp ≤ 1 s; δ ≤ 0.5
non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method
Tstg
Tj
storage temperature
−65
−
+150
150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
+150
ELECTRICAL CHARACTERISTICS
amb = 25 °C; unless otherwise specified.
T
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
continuous forward voltage
see Fig.6
IF = 0.1 mA
200
260
340
−
−
mV
mV
mV
mV
mV
µA
IF = 1 mA
−
IF = 10 mA
−
IF = 30 mA
420
550
0.5
20
IF = 100 mA
−
IR
continuous reverse current
diode capacitance
VR = 25 V; note 1; see Fig.7
VR = 1 V; f = 1 MHz; see Fig.8
−
Cd
−
pF
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
625
K/W
Note
1. Refer to SOT323 standard mounting conditions.
2001 Feb 27
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
GRAPHICAL DATA
MLD547
MLD546
3
3
10
10
handbook, halfpage
handbook, halfpage
I
I
F
R
(1)
(2)
(mA)
(µA)
2
2
10
10
10
10
1
(1)
(2) (3)
1
(3)
−1
−1
10
10
0
0.4
0.8
1.2
0
10
20
30
40
V
(V)
V
(V)
R
F
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
MLD548
20
handbook, halfpage
C
d
(pF)
16
12
8
4
0
0
10
20
30
40
V
(V)
R
f = 1 MHz; Tamb = 25 °C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
2001 Feb 27
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
2001 Feb 27
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Feb 27
6
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
NOTES
2001 Feb 27
7
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613514/01/pp8
Date of release: 2001 Feb 27
Document order number: 9397 750 07935
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