BAT760_13 [NXP]

Medium power Schottky barrier single diode; 中等功率肖特基势垒二极管单
BAT760_13
型号: BAT760_13
厂家: NXP    NXP
描述:

Medium power Schottky barrier single diode
中等功率肖特基势垒二极管单

二极管
文件: 总9页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAT760  
Medium power Schottky barrier single diode  
Rev. 03 — 17 October 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Planar medium power Schottky barrier single diode with an integrated guard ring for  
stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted  
Device SMD plastic package.  
1.2 Features  
I Ultra high-speed switching  
I Very low forward voltage  
I Guard-ring protected  
I Very small SMD plastic package  
1.3 Applications  
I Ultra high-speed switching  
I Voltage clamping  
I Protection circuits  
1.4 Quick reference data  
Table 1.  
Symbol  
VR  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
20  
Unit  
V
reverse voltage  
forward current  
forward voltage  
-
-
-
-
IF  
-
1
A
[1]  
VF  
IF = 1 A  
480  
550  
mV  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
BAT760  
NXP Semiconductors  
Medium power Schottky barrier single diode  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Graphic symbol  
[1]  
1
2
1
2
2
anode  
sym001  
[1] The marking bar indicates the cathode.  
3. Ordering information  
Table 3.  
Ordering information  
Type number Package  
Name  
Description  
Version  
BAT760  
SC-76  
plastic surface-mounted package; 2 leads  
SOD323  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking code  
BAT760  
A4  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
20  
1
Unit  
V
VR  
IF  
reverse voltage  
-
-
-
forward current  
A
IFSM  
non-repetitive peak  
forward current  
tp = 8.3 ms;  
half-sine wave;  
JEDEC method  
5
A
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
125  
°C  
°C  
°C  
Tamb  
Tstg  
65  
65  
+125  
+150  
BAT760_3  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 03 — 17 October 2008  
2 of 9  
BAT760  
NXP Semiconductors  
Medium power Schottky barrier single diode  
6. Thermal characteristics  
Table 6.  
Symbol  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
thermal resistance from  
junction to ambient  
in free air  
[1]  
[2]  
-
-
-
-
220  
180  
K/W  
K/W  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
cathode 10 × 10 mm2.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 40 × 40 mm2.  
7. Characteristics  
Table 7.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
VF forward voltage  
Min  
Typ  
Max  
Unit  
[1]  
[1]  
IF = 10 mA  
IF = 100 mA  
IF = 1 A  
-
-
-
240  
300  
480  
270  
350  
550  
mV  
mV  
mV  
IR  
reverse current  
VR = 5 V  
VR = 8 V  
VR = 15 V  
-
-
-
-
5
10  
20  
50  
25  
µA  
µA  
µA  
pF  
7
10  
19  
Cd  
diode capacitance VR = 5 V; f = 1 MHz  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
BAT760_3  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 03 — 17 October 2008  
3 of 9  
BAT760  
NXP Semiconductors  
Medium power Schottky barrier single diode  
mld562  
mld563  
3
5
10  
10  
I
R
I
F
(µA)  
(mA)  
(1)  
(2)  
4
10  
10  
10  
2
10  
3
2
(1)  
(2)  
(3)  
10  
(3)  
1
10  
1
1  
10  
0
0.2  
0.4  
0.6  
0
5
10  
15  
20  
25  
V
(V)  
V
(V)  
F
R
(1) Tamb = 125 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
(1) Tamb = 125 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
Fig 1. Forward current as a function of forward  
voltage; typical values  
Fig 2. Reverse current as a function of reverse  
voltage; typical values  
mld564  
80  
C
d
(pF)  
60  
40  
20  
0
0
5
10  
15  
20  
V
(V)  
R
f = 1 MHz; Tamb = 25 °C  
Fig 3. Diode capacitance as a function of reverse voltage; typical values  
BAT760_3  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 03 — 17 October 2008  
4 of 9  
BAT760  
NXP Semiconductors  
Medium power Schottky barrier single diode  
8. Package outline  
1.35  
1.15  
1.1  
0.8  
0.45  
0.15  
1
2.7 1.8  
2.3 1.6  
2
0.40  
0.25  
0.25  
0.10  
Dimensions in mm  
03-12-17  
Fig 4. Package outline SOD323 (SC-76)  
9. Packing information  
Table 8.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number Package  
Description  
Packing quantity  
3000  
-115  
10000  
BAT760  
SOD323  
4 mm pitch, 8 mm tape and reel  
-135  
[1] For further information and the availability of packing methods, see Section 13.  
BAT760_3  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 03 — 17 October 2008  
5 of 9  
BAT760  
NXP Semiconductors  
Medium power Schottky barrier single diode  
10. Soldering  
3.05  
2.1  
solder lands  
solder resist  
1.65 0.95  
0.5 (2×) 0.6 (2×)  
solder paste  
occupied area  
2.2  
Dimensions in mm  
0.5  
(2×)  
0.6  
(2×)  
sod323_fr  
Fig 5. Reflow soldering footprint SOD323 (SC-76)  
5
2.9  
1.5 (2×)  
solder lands  
solder resist  
occupied area  
1.2  
2.75  
Dimensions in mm  
(2×)  
preferred transport  
direction during soldering  
sod323_fw  
Fig 6. Wave soldering footprint SOD323 (SC-76)  
BAT760_3  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 03 — 17 October 2008  
6 of 9  
BAT760  
NXP Semiconductors  
Medium power Schottky barrier single diode  
11. Revision history  
Table 9.  
Revision history  
Document ID  
BAT760_3  
Release date  
Data sheet status  
Change notice  
Supersedes  
20081017  
Product data sheet  
-
BAT760_2  
Modifications:  
The format of this data sheet has been redesigned to comply with the new identity  
guidelines of NXP Semiconductors.  
Legal texts have been adapted to the new company name where appropriate.  
Table 1 “Quick reference data”: added  
Figure 4: superseded by minimized package outline drawing  
Section 9 “Packing information”: added  
Section 10 “Soldering”: added  
Section 12 “Legal information”: updated  
BAT760_2  
BAT760_1  
20040126  
Product specification  
-
-
BAT760_1  
-
20010312  
Product specification  
BAT760_3  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 03 — 17 October 2008  
7 of 9  
BAT760  
NXP Semiconductors  
Medium power Schottky barrier single diode  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
12.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
12.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BAT760_3  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 03 — 17 October 2008  
8 of 9  
BAT760  
NXP Semiconductors  
Medium power Schottky barrier single diode  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Packing information. . . . . . . . . . . . . . . . . . . . . . 5  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7  
3
4
5
6
7
8
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . . 8  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2008.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 17 October 2008  
Document identifier: BAT760_3  

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