BAT721A,235 [NXP]
BAT721A - 40 V, 200 mA Schottky barrier dual diode TO-236 3-Pin;型号: | BAT721A,235 |
厂家: | NXP |
描述: | BAT721A - 40 V, 200 mA Schottky barrier dual diode TO-236 3-Pin 开关 光电二极管 |
文件: | 总11页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
Rev. 06 — 21 December 2006
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diodes with an integrated guard ring for stress protection.
Encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Type number
Package
NXP
Configuration
JEITA
1PS76SB21
BAT721
SOD323
SOT23
SOT23
SOT23
SOT23
SC-76
single
-
-
-
-
single
BAT721A
BAT721C
BAT721S
dual common anode
dual common cathode
dual series
1.2 Features
I Low forward voltage
I Small SMD plastic packages
I Low capacitance
1.3 Applications
I Ultra high-speed switching
I Voltage clamping
I Line termination
I Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Per diode
IF
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
forward current
reverse voltage
forward voltage
-
-
-
-
-
-
200
40
mA
V
VR
[1]
VF
IF = 200 mA
550
mV
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1PS76SB21; BAT721 series
NXP Semiconductors
Schottky barrier diodes in small packages
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
1PS76SB21
[1]
1
2
cathode
anode
1
2
1
2
sym001
BAT721
1
2
3
anode
3
3
3
3
3
not connected
cathode
2
n.c.
1
006aaa436
1
1
1
1
2
006aaa144
BAT721A
1
2
3
cathode (diode 1)
cathode (diode 2)
3
anode (diode 1),
anode (diode 2)
1
2
006aaa439
2
006aaa144
BAT721C
1
2
3
anode (diode 1)
anode (diode 2)
3
cathode (diode 1),
cathode (diode 2)
1
2
006aaa438
2
006aaa144
BAT721S
1
2
3
anode (diode 1)
3
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
1
2
006aaa437
2
006aaa144
[1] The marking bar indicates the cathode.
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
2 of 11
1PS76SB21; BAT721 series
NXP Semiconductors
Schottky barrier diodes in small packages
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
SC-76
-
Description
Version
SOD323
SOT23
1PS76SB21
BAT721
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 3 leads
BAT721A
BAT721C
BAT721S
4. Marking
Table 5.
Marking codes
Type number
1PS76SB21
BAT721
Marking code[1]
S1
L7*
L8*
L9*
L0*
BAT721A
BAT721C
BAT721S
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VR
Parameter
Conditions
Min
Max
Unit
reverse voltage
forward current
-
-
-
40
200
1
V
IF
mA
A
IFSM
non-repetitive peak forward half sine wave;
current
JEDEC method;
tp = 8.3 ms
Tj
junction temperature
ambient temperature
storage temperature
-
125
°C
°C
°C
Tamb
Tstg
−65
−65
+150
+150
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
3 of 11
1PS76SB21; BAT721 series
NXP Semiconductors
Schottky barrier diodes in small packages
6. Thermal characteristics
Table 7.
Symbol
Per diode
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
[1]
thermal resistance from
junction to ambient
in free air
1PS76SB21
BAT721
-
-
-
-
-
-
-
-
-
-
450
500
500
500
500
K/W
K/W
K/W
K/W
K/W
BAT721A
BAT721C
BAT721S
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max
Unit
[1]
[1]
[1]
VF
forward voltage
IF = 10 mA
-
-
-
-
-
-
-
300
420
550
15
mV
mV
mV
µA
IF = 100 mA
-
IF = 200 mA
-
IR
reverse current
VR = 30 V
-
VR = 30 V; Tj = 100 °C
-
3
mA
pF
Cd
diode capacitance VR = 0 V; f = 1 MHz
40
50
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
4 of 11
1PS76SB21; BAT721 series
NXP Semiconductors
Schottky barrier diodes in small packages
006aaa689
006aaa690
3
10
10
I
R
(1)
(2)
(mA)
I
F
1
(mA)
2
10
−1
10
−2
−3
−4
−5
−6
10
10
10
10
10
(3)
(1) (2)
(3)
(4)
10
1
(4)
−1
10
0
200
400
600
0
10
20
30
40
V
(mV)
V (V)
R
F
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
mbk574
2
10
C
d
(pF)
10
1
0
10
20
30
40
V
(V)
R
Tamb = 25 °C; f = 1 MHz
Fig 3. Diode capacitance as a function of reverse voltage; typical values
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
5 of 11
1PS76SB21; BAT721 series
NXP Semiconductors
Schottky barrier diodes in small packages
8. Package outline
1.35
1.15
1.1
0.8
3.0
2.8
1.1
0.9
0.45
0.15
1
3
0.45
0.15
2.5 1.4
2.1 1.2
2.7 1.8
2.3 1.6
1
2
2
0.48
0.38
0.15
0.09
0.40
0.25
0.25
0.10
1.9
Dimensions in mm
03-12-17
Dimensions in mm
04-11-04
Fig 4. Package outline SOD323 (SC-76)
Fig 5. Package outline SOT23
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-115
-215
10000
-135
1PS76SB21
BAT721
SOD323
SOT23
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-235
BAT721A
BAT721C
BAT721S
[1] For further information and the availability of packing methods, see Section 13.
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
6 of 11
1PS76SB21; BAT721 series
NXP Semiconductors
Schottky barrier diodes in small packages
10. Soldering
3.05
2.80
2.10
1.60
solder lands
solder resist
1.65 0.95
0.50 0.60
occupied area
solder paste
0.50
(2×)
msa433
Dimensions in mm
Fig 6. Reflow soldering footprint SOD323 (SC-76)
5.00
4.40
1.40
solder lands
solder resist
occupied area
2.75 1.20
msa415
preferred transport direction during soldering
Dimensions in mm
Fig 7. Wave soldering footprint SOD323 (SC-76)
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
7 of 11
1PS76SB21; BAT721 series
NXP Semiconductors
Schottky barrier diodes in small packages
2.90
2.50
solder lands
solder resist
2
1
0.85
0.85
occupied area
solder paste
2.70
3.00
1.30
3
0.60
(3x)
0.50 (3x)
0.60 (3x)
1.00
3.30
MSA439
Dimensions in mm
Fig 8. Reflow soldering footprint SOT23
3.40
1.20 (2x)
solder lands
solder resist
occupied area
2
1
4.60 4.00 1.20
3
preferred transport direction during soldering
2.80
4.50
MSA427
Dimensions in mm
Fig 9. Wave soldering footprint SOT23
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
8 of 11
1PS76SB21; BAT721 series
NXP Semiconductors
Schottky barrier diodes in small packages
11. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
1PS76SB21_BAT721_SER_6 20061221
Product data sheet
-
1PS76SB21_BAT721
_SER_5
Modifications:
• Amended Table 10 “Revision history”
Product data sheet
1PS76SB21_BAT721_SER_5 20061205
-
BAT721_SERIES_4
1PS76SB21_3
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• This data sheet is a combination of data sheets BAT721_SERIES_4 and
1PS76SB21_3.
• Table 1 “Product overview”: added
• Section 1.2 “Features”: amended
• Section 1.3 “Applications”: amended
• Table 2 “Quick reference data”: added
• Table 5 “Marking codes”: for 1PS76SB21 amended
• Table 5 “Marking codes”: enhanced table note section
• Table 6 “Limiting values”: indication per diode added
• Table 6 “Limiting values”: for 1PS76SB21 IFSM condition amended
• Table 6 “Limiting values”: Tamb ambient temperature added
• Table 7 “Thermal characteristics”: indication per diode added
• Table 7: Rth(j-a) thermal resistance from junction to ambient condition amended
• Table 8 “Characteristics”: indication per diode added
• Table 8 “Characteristics”: reference to Table note 1 amended
• Table 8: for 1PS76SB21 Cd minimum value changed to typical value
• Figure 1 and 2: amended
• Figure 4 and 5: superseded by minimized package outlines
• Section 9 “Packing information”: added
• Section 10 “Soldering”: added
• Section 12 “Legal information”: updated
BAT721_SERIES_4
1PS76SB21_3
20040315
Product specification
-
-
BAT721_SERIES_3
1PS76SB21_2
20040126
Product specification
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
9 of 11
1PS76SB21; BAT721 series
NXP Semiconductors
Schottky barrier diodes in small packages
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
12.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
10 of 11
1PS76SB21; BAT721 series
NXP Semiconductors
Schottky barrier diodes in small packages
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 December 2006
Document identifier: 1PS76SB21_BAT721_SER_6
相关型号:
BAT721AT/R
DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
NXP
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