BAT54S/DG/B2,215 [NXP]
Schottky barrier (double) diodes, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel;
| 型号： | BAT54S/DG/B2,215 |
| 厂家： | 
NXP |
| 描述： | Schottky barrier (double) diodes, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel |
| 文件： | 总7页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BAT54 series
Schottky barrier (double) diodes
Product data sheet
2002 Mar 04
Supersedes data of 2001 Oct 12
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT54 series
FEATURES
PINNING
PIN
• Low forward voltage
DESCRIPTION
BAT54A BAT54C BAT54S
• Guard ring protected
BAT54
• Small plastic SMD package.
1
2
3
a
k1
a1
a1
n.c.
k
k2
a2
k2
APPLICATIONS
a1, a2
k1, k2
k1, a2
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
3
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23
small plastic SMD package. Single diodes and double
diodes with different pinning are available.
1
2
Top view
MGC421
MARKING
Fig.1 Simplified outline (SOT23) and pin
configuration.
TYPE NUMBER
BAT54
MARKING CODE(1)
L4∗
BAT54A
BAT54C
BAT54S
L42 or ∗V3
L43 or ∗W1
L44 or ∗V4
3
3
1
2
1
2
n.c.
Note
MLC360
MLC357
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W: Made in China.
(1) BAT54
(2) BAT54A
3
3
1
2
1
2
MLC359
MLC358
(3) BAT54C
(4) BAT54S
Fig.2 Diode configuration and symbol.
2002 Mar 04
2
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT54 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
−
−
−
−
30
V
IF
200
300
600
+150
125
mA
mA
mA
°C
IFRM
IFSM
Tstg
Tj
tp ≤ 1 s; δ ≤ 0.5
tp < 10 ms
−65
junction temperature
−
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
−
230
mW
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
500
K/W
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 0.1 mA
IF = 1 mA
240
mV
mV
mV
mV
mV
μA
320
400
500
800
2
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 25 V; see Fig.4
IR
trr
reverse current
reverse recovery time
when switched from IF = 10 mA
to IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA;
see Fig.6
5
ns
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.5
10
pF
2002 Mar 04
3
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT54 series
MSA892
MSA893
3
2
3
10
10
handbook, halfpage
I
I
(1)
(1) (2) (3)
F
R
(μA)
(mA)
2
10
10
(2)
10
10
(1)
(2) (3)
1
1
1
(3)
1
10
10
0
0.4
0.8
1.2
0
10
20
30
V
(V)
V
(V)
R
F
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3)
T
amb = 25 °C.
(3) Tamb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
MSA891
15
handbook, halfpage
C
d
handbook, halfpage
I
F
(pF)
dI
F
10
dt
t
10%
90%
5
0
Q
r
I
R
t
MRC129 - 1
f
0
10
20
30
V
(V)
R
f = 1 MHz; Tamb = 25 °C.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
Fig.6 Reverse recovery definitions.
2002 Mar 04
4
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT54 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2002 Mar 04
5
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT54 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Mar 04
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp7
Date of release: 2002 Mar 04
Document order number: 9397 750 09408
相关型号：
BAT54SD87Z
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