BAS21J,115 [NXP]

BAS21J - Single high-speed switching diode SOD 2-Pin;
BAS21J,115
型号: BAS21J,115
厂家: NXP    NXP
描述:

BAS21J - Single high-speed switching diode SOD 2-Pin

PC 光电二极管
文件: 总10页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS21J  
Single high-speed switching diode  
Rev. 01 — 8 March 2007  
Product data sheet  
1. Product profile  
1.1 General description  
Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and  
flat lead Surface-Mounted Device (SMD) plastic package.  
1.2 Features  
I High switching speed: trr 50 ns  
I Low capacitance: Cd 2 pF  
I Reverse voltage: VR 300 V  
I Very small and flat lead SMD plastic  
package  
I Low leakage current  
I Repetitive peak reverse voltage:  
V
RRM 300 V  
I Excellent coplanarity and improved  
thermal behavior  
1.3 Applications  
I High-speed switching  
I Voltage clamping  
I General-purpose switching  
I Reverse polarity protection  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
250  
150  
300  
50  
Unit  
mA  
nA  
V
[1]  
[2]  
IF  
forward current  
-
-
-
-
-
-
-
-
IR  
VR  
trr  
reverse current  
VR = 250 V  
reverse voltage  
reverse recovery time  
ns  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA.  
 
 
 
 
 
 
 
BAS21J  
NXP Semiconductors  
Single high-speed switching diode  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Symbol  
[1]  
1
2
2
anode  
sym006  
[1] The marking bar indicates the cathode.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
SOD323F  
BAS21J  
SC-90  
plastic surface-mounted package; 2 leads  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking code  
BAS21J  
AN  
BAS21J_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 8 March 2007  
2 of 10  
 
 
 
 
BAS21J  
NXP Semiconductors  
Single high-speed switching diode  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VRRM  
repetitive peak reverse  
voltage  
-
300  
V
VR  
IF  
reverse voltage  
forward current  
-
-
-
300  
250  
1
V
[1]  
[2]  
mA  
A
IFRM  
repetitive peak forward  
current  
tp 0.5 ms;  
δ ≤ 0.25  
IFSM  
non-repetitive peak forward square wave  
current  
tp = 100 µs  
-
3
A
tp = 1 ms  
-
2.3  
A
tp = 10 ms  
-
1.7  
A
[3][4]  
Ptot  
Tj  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
Tamb 25 °C  
-
550  
150  
+150  
+150  
mW  
°C  
°C  
°C  
-
Tamb  
Tstg  
65  
65  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
[2] Tj = 25 °C prior to surge.  
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
cathode 1 cm2.  
[4] Reflow soldering is the only recommended soldering method.  
6. Thermal characteristics  
Table 6.  
Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
[1][2]  
[3]  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
-
-
230  
K/W  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
-
-
55  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[2] Reflow soldering is the only recommended soldering method.  
[3] Soldering point of cathode tab.  
BAS21J_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 8 March 2007  
3 of 10  
 
 
 
 
 
 
 
 
 
BAS21J  
NXP Semiconductors  
Single high-speed switching diode  
7. Characteristics  
Table 7.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ Max  
Unit  
V
[1]  
[2]  
VF  
IR  
forward voltage  
IF = 100 mA  
-
-
-
-
-
-
-
-
-
-
1.1  
150  
50  
2
reverse current  
VR = 250 V  
nA  
µA  
pF  
ns  
VR = 250 V; Tj = 150 °C  
VR = 0 V; f = 1 MHz  
Cd  
trr  
diode capacitance  
reverse recovery time  
50  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA.  
BAS21J_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 8 March 2007  
4 of 10  
 
 
 
BAS21J  
NXP Semiconductors  
Single high-speed switching diode  
mbg703  
mhc618  
2
10  
500  
I
F
(mA)  
I
FSM  
(A)  
400  
10  
300  
200  
100  
0
1
(1) (2)  
(3)  
1
1  
10  
2
3
4
1
10  
10  
10  
10  
0
0.5  
1.5  
VF (V)  
t
(µs)  
p
(1) Tamb = 150 °C  
(2) Tamb = 75 °C  
(3) Tamb = 25 °C  
Based on square wave currents.  
Tj = 25 °C; prior to surge  
Fig 1. Forward current as a function of forward  
voltage; typical values  
Fig 2. Non-repetitive peak forward current as a  
function of pulse duration; maximum values  
mhc619  
mhc621  
2
10  
0.42  
I
R
C
(pF)  
d
(µA)  
10  
0.38  
1
0.34  
0.3  
1  
10  
2  
10  
0
40  
80  
120  
160  
200  
T (°C)  
0
10  
20  
30  
40  
V
R
(V)  
j
VR = 250 V  
f = 1 MHz; Tamb = 25 °C  
Fig 3. Reverse current as a function of junction  
temperature; typical values  
Fig 4. Diode capacitance as a function of reverse  
voltage; typical values  
BAS21J_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 8 March 2007  
5 of 10  
BAS21J  
NXP Semiconductors  
Single high-speed switching diode  
8. Test information  
t
t
p
r
t
D.U.T.  
10 %  
I
+ I  
F
t
F
rr  
R
S
= 50  
SAMPLING  
OSCILLOSCOPE  
t
R
i
= 50 Ω  
V = V + I × R  
S
R
F
(1)  
90 %  
V
R
mga881  
input signal  
output signal  
(1) IR = 1 mA  
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05  
Oscilloscope: rise time tr = 0.35 ns  
Fig 5. Reverse recovery time test circuit and waveforms  
BAS21J_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 8 March 2007  
6 of 10  
 
BAS21J  
NXP Semiconductors  
Single high-speed switching diode  
9. Package outline  
1.35  
1.15  
0.80  
0.65  
0.5  
0.3  
1
2.7 1.8  
2.3 1.6  
2
0.40  
0.25  
0.25  
0.10  
Dimensions in mm  
04-09-13  
Fig 6. Package outline SOD323F (SC-90)  
10. Packing information  
Table 8.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
10000  
-135  
BAS21J  
SOD323F  
4 mm pitch, 8 mm tape and reel  
-115  
[1] For further information and the availability of packing methods, see Section 14.  
11. Soldering  
3.05  
2.80  
2.10  
1.60  
solder lands  
solder resist  
1.65 0.95  
0.50 0.60  
001aab169  
occupied area  
solder paste  
0.50  
(2×)  
Reflow soldering is the only recommended soldering method.  
Dimensions in mm  
Fig 7. Reflow soldering footprint SOD323F (SC-90)  
BAS21J_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 8 March 2007  
7 of 10  
 
 
 
 
BAS21J  
NXP Semiconductors  
Single high-speed switching diode  
12. Revision history  
Table 9.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BAS21J_1  
20070308  
Product data sheet  
-
-
BAS21J_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 8 March 2007  
8 of 10  
 
BAS21J  
NXP Semiconductors  
Single high-speed switching diode  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of a NXP Semiconductors product can reasonably be expected to  
13.2 Definitions  
result in personal injury, death or severe property or environmental damage.  
NXP Semiconductors accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or applications and therefore  
such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
13.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
14. Contact information  
For additional information, please visit: http://www.nxp.com  
For sales office addresses, send an email to: salesaddresses@nxp.com  
BAS21J_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 8 March 2007  
9 of 10  
 
 
 
 
 
 
BAS21J  
NXP Semiconductors  
Single high-speed switching diode  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Packing information. . . . . . . . . . . . . . . . . . . . . . 7  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8  
3
4
5
6
7
8
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . . 9  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2007.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 8 March 2007  
Document identifier: BAS21J_1  
 

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