BAS21H,115 [NXP]
BAS21H - Single high-voltage switching diode SOD-123 2-Pin;
| 型号： | BAS21H,115 |
| 厂家： | 
NXP |
| 描述： | BAS21H - Single high-voltage switching diode SOD-123 2-Pin |
| 文件： | 总10页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS21H
Single high-voltage switching diode
Rev. 02 — 3 November
Product data sheet
1. Product profile
1.1 General description
Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Small and flat lead SMD plastic package
I Reverse voltage: VR ≤ 200 V
1.3 Applications
I General-purpose switching
1.4 Quick reference data
Table 1.
Quick reference data
Parameter
Symbol
Conditions
Min
Typ
Max
200
200
50
Unit
mA
V
[1]
[2]
IF
forward current
-
-
-
-
-
-
VR
trr
reverse voltage
reverse recovery time
ns
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
BAS21H
NXP Semiconductors
Single high-voltage switching diode
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Symbol
[1]
1
2
2
anode
1
2
sym001
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BAS21H
plastic surface-mounted package; 2 leads
SOD123F
4. Marking
Table 4.
Marking codes
Type number
Marking code
BAS21H
B2
BAS21H_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 3 November
2 of 10
BAS21H
NXP Semiconductors
Single high-voltage switching diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-
250
V
VR
IF
reverse voltage
forward current
-
-
-
200
200
625
V
[1]
[2]
mA
mA
IFRM
repetitive peak forward
current
tp = 1 ms;
δ = 0.25
IFSM
non-repetitive peak forward square wave
current
tp = 1 µs
-
9
A
tp = 100 µs
-
3
A
tp = 10 ms
-
1.7
375
150
+150
+150
A
[3]
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb ≤ 25 °C
-
mW
°C
°C
°C
-
Tamb
Tstg
−65
−65
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] Tj = 25 °C prior to surge.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1][2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
330
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
70
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point of cathode tab.
BAS21H_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 3 November
3 of 10
BAS21H
NXP Semiconductors
Single high-voltage switching diode
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ Max
Unit
V
[1]
[1]
VF
IR
forward voltage
IF = 100 mA
-
-
-
-
-
-
-
-
-
-
-
-
1
IF = 200 mA
1.25
100
100
5
V
reverse current
VR = 200 V
nA
µA
pF
ns
VR = 200 V; Tj = 150 °C
VR = 0 V; f = 1 MHz
Cd
trr
diode capacitance
[2]
reverse recovery time
50
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
BAS21H_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 3 November
4 of 10
BAS21H
NXP Semiconductors
Single high-voltage switching diode
mbg703
mbg384
2
10
600
I
I
F
FSM
(A)
(mA)
(1)
(2)
(3)
10
400
1
200
−1
10
0
2
3
4
0
1
2
1
10
10
10
10
V
F
(V)
t
(µs)
p
(1) Tamb = 150 °C; typical values
(2) Tamb = 25 °C; typical values
Based on square wave currents.
Tj = 25 °C; prior to surge
(3) Tamb = 25 °C; maximum values
Fig 1. Forward current as a function of forward
voltage
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg381
mbg447
2
10
1.0
I
C
d
R
(µA)
(pF)
10
0.8
(1)
(2)
1
0.6
−1
10
0.4
0.2
−2
10
0
100
200
0
2
4
6
8
T (°C)
j
V
(V)
R
(1) VR = VRmax; maximum values
(2) VR = VRmax; typical values
f = 1 MHz; Tamb = 25 °C
Fig 3. Reverse current as a function of junction
temperature
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS21H_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 3 November
5 of 10
BAS21H
NXP Semiconductors
Single high-voltage switching diode
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 3 mA
Fig 5. Reverse recovery time test circuit and waveforms
9. Package outline
1.7
1.5
1.2
1.0
1
0.55
0.35
3.6 2.7
3.4 2.5
2
0.70
0.55
0.25
0.10
Dimensions in mm
04-11-29
Fig 6. Package outline SOD123F
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
BAS21H
SOD123F
4 mm pitch, 8 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 15.
BAS21H_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 3 November
6 of 10
BAS21H
NXP Semiconductors
Single high-voltage switching diode
11. Soldering
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 7. Reflow soldering footprint SOD123F
12. Mounting
43.4
1.2
1.2
0.5
1.2
40
1.2
Dimensions in mm
006aaa670
PCB thickness = 1.6 mm
Fig 8. FR4 PCB, standard footprint SOD123F
BAS21H_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 3 November
7 of 10
BAS21H
NXP Semiconductors
Single high-voltage switching diode
13. Revision history
Table 9.
Revision history
Document ID
BAS21H_2
Release date
Data sheet status
Change notice
Supersedes
20061103
Product data sheet
-
BAS21H_1
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1.1 “General description”: amended
• Table 1 “Quick reference data”: IF forward current table note added
• Table 5 “Limiting values”: IF forward current table note added
• Table 5 “Limiting values”: IFRM repetitive peak forward current condition amended
• Table 5 “Limiting values”: IFSM non-repetitive peak forward current condition amended
• Table 6: Rth(j-sp) thermal resistance from junction to solder point table note added
• Table 7 “Characteristics”: VF forward voltage unit amended
• Figure 2: figure title and figure note amended
• Figure 3: amended
• Section 12 “Mounting”: added
• Section 14.4 “Trademarks”: added
BAS21H_1
20050411
Product data sheet
-
-
BAS21H_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 3 November
8 of 10
BAS21H
NXP Semiconductors
Single high-voltage switching diode
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
14.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
15. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BAS21H_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 3 November
9 of 10
BAS21H
NXP Semiconductors
Single high-voltage switching diode
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
9
10
11
12
13
14
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14.1
14.2
14.3
14.4
15
16
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 November
Document identifier: BAS21H_2
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