BA423AL [NXP]
AM band-switching diode; AM波段开关二极管
| 型号： | BA423AL |
| 厂家： | 
NXP |
| 描述： | AM band-switching diode |
| 文件： | 总4页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BA423AL
AM band-switching diode
1996 Mar 13
Product specification
Supersedes data of April 1992
Philips Semiconductors
Product specification
AM band-switching diode
BA423AL
FEATURES
DESCRIPTION
• Continuous reverse voltage:
max. 20 V
Leadless diode in a hermetically-sealed glass SOD80C SMD package with
lead/tin plated metal discs at each end.
• Continuous forward current:
max. 50 mA
• Low diode capacitance:
max. 2.5 pF
k
a
handbook, 4 columns
• Low diode forward resistance:
max. 1.2 Ω.
MAM061
APPLICATION
Fig.1 Simplified outline (SOD80C) and symbol.
• Band switching in AM radio
receivers.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
IF
continuous reverse voltage
continuous forward current
storage temperature
−
−
20
50
V
mA
°C
Tstg
Tj
−65
−
+150
150
junction temperature
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 50 mA; see Fig.2
MAX.
UNIT
VF
IR
0.9
V
reverse current
see Fig.3
VR = 20V
100
5
nA
µA
pF
Ω
VR = 20 V; Tj = 125 °C
f = 1 MHz; VR = 3 V; see Fig.4
IF = 10 mA; f = 1 MHz; see Fig.5
Cd
rD
diode capacitance
2.5
1.2
diode forward resistance
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
VALUE
300
UNIT
K/W
K/W
Rth j-a
note 1
375
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13
2
Philips Semiconductors
Product specification
AM band-switching diode
BA423AL
GRAPHICAL DATA
MBG292
MBG291
4
100
10
handbook, halfpage
handbook, halfpage
I
R
(1)
(2)
(3)
(nA)
I
F
3
10
(mA)
2
50
10
10
0
1
0
0
0.5
1
1.5
50
100
150
o
( C)
V
(V)
T
F
j
(1) Tj = 125 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
VR = 20 V.
Solid line: maximum values.
Dotted line: typical values.
Fig.2 Forward current as a function of
forward voltage.
Fig.3 Reverse current as a function of
junction temperature.
MBG297
MBG298
4
4
handbook, halfpage
handbook, halfpage
C
d
r
D
(pF)
(Ω)
3
3
2
1
2
1
0
0
0
0
4
8
12
16
4
8
12
16
(mA)
V
(V)
I
R
F
f = 1 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
Fig.5 Diode forward resistance as a function of
forward current; typical values.
1996 Mar 13
3
Philips Semiconductors
Product specification
AM band-switching diode
BA423AL
PACKAGE OUTLINE
1.60
1.45
O
0.3
0.3
3.7
3.3
MBA390 - 2
Dimensions in mm.
The cathode is indicated by a red band.
Fig.6 SOD80C.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 13
4
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