AU5790D,118 [NXP]
IC DATACOM, INTERFACE CIRCUIT, PDSO8, PLASTIC, SO-8, Network Interface;
| 型号： | AU5790D,118 |
| 厂家： | 
NXP |
| 描述： | IC DATACOM, INTERFACE CIRCUIT, PDSO8, PLASTIC, SO-8, Network Interface 光电二极管 |
| 文件： | 总20页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
AU5790
Single wire CAN transceiver
Product data
2001 May 18
Supersedes data of 2001 Jan 31
IC18 Data Handbook
Philips
Semiconductors
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
FEATURES
DESCRIPTION
The AU5790 is a line transceiver, primarily intended for in-vehicle
multiplex applications. The device provides an interface between a
CAN data link controller and a single wire physical bus line. The
achievable bus speed is primarily a function of the network time
constant and bit timing, e.g., up to 33.3 kbps with a network
including 32 bus nodes. The AU5790 provides advanced
• Supports in-vehicle class B multiplexing via a single bus line with
ground return
• 33 kbps CAN bus speed with loading as per J2411
• 83 kbps high-speed transmission mode
• Low RFI due to output waveshaping
sleep/wake-up functions to minimize power consumption when a
vehicle is parked, while offering the desired control functions of the
network at the same time. Fast transfer of larger blocks of data is
supported using the high-speed data transmission mode.
• Direct battery operation with protection against load dump, jump
start and transients
• Bus terminal protected against short-circuits and transients in the
automotive environment
• Built-in loss of ground protection
• Thermal overload protection
• Supports communication between control units even when
network in low-power state
• 70 µA typical power consumption in sleep mode
• 8- and 14-pin small outline packages
• ±8 kV ESD protection on bus and battery pins
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Operating supply voltage
Operating ambient temperature range
Battery voltage
CONDITIONS
MIN.
5.3
TYP.
MAX.
27
UNIT
V
13
V
BAT
T
–40
+125
+40
4.55
2.2
6.3
9
°C
V
amb
V
V
V
load dump; 1s
BATld
CANHN
T
Bus output voltage
3.65
1.8
3
V
Bus input threshold
V
t
t
t
I
Bus output delay, rising edge
Bus output delay, falling edge
Bus input delay
µs
µs
µs
µA
TrN
3
TfN
0.3
1
DN
Sleep mode supply current
70
100
BATS
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
–40 °C to +125 °C
ORDER CODE
AU5790D
AU5790D14
DWG #
SOT96–1
SOT108–1
SO8: 8-pin plastic small outline package
SO14: 14-pin plastic small outline package
–40 °C to +125 °C
2
2001 May 18
853-2237 26343
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
BLOCK DIAGRAM
BATTERY (+12V)
BAT
1
VOLTAGE
TEMP.
PROTECTION
REFERENCE
CANH
(BUS)
TxD
7
OUTPUT
BUFFER
3
NSTB
(Mode 0)
MODE
BUS
CONTROL
6
RECEIVER
EN
(Mode 1)
R
T
RxD
5
4
LOSS OF
GROUND
RTH
(LOAD)
PROTECTION
AU5790
8
GND
SL01199
Figure 1.
Block Diagram
3
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
SO8 PIN CONFIGURATION
SO14 PIN CONFIGURATION
1
2
3
4
8
7
6
1
14
TxD
NSTB (Mode 0)
EN (Mode 1)
GND
GND
GND
2
3
13
12
CANH (BUS)
RTH (Load)
TxD
NSTB (Mode 0)
EN (Mode 1)
N.C.
AU5790
CANH (BUS)
AU5790
RxD
RTH (Load)
BAT
4
5
5
11
10
BAT
SO8
RxD
N.C.
GND
N.C.
6
7
9
8
SL01198
GND
SO14
SO8 PIN DESCRIPTION
SL01251
SYM-
BOL
PIN
DESCRIPTION
TxD
1
Transmit data input: high = transmitter passive;
low = transmitter active
SO14 PIN DESCRIPTION
NSTB
(Mode 0)
2
Stand-by control: high = normal and
high-speed mode; low = sleep and wake-up
mode
SYM-
BOL
PIN
DESCRIPTION
GND
1
2
Ground
EN
(Mode 1)
3
4
Enable control: high = normal and wake-up
mode; low = sleep and high-speed mode
TxD
Transmit data input: high = transmitter passive;
low = transmitter active
RxD
Receive data output: low = active bus condition
detected; float/high = passive bus condition
detected
NSTB
(Mode 0)
3
Stand-by control: high = normal and
high-speed mode; low = sleep and wake-up
mode
BAT
5
6
Battery supply input (12 V nom.)
EN
(Mode 1)
4
5
Enable control: high = normal and wake-up
mode; low = sleep and high-speed mode
RTH
(LOAD)
Switched ground pin: pulls the load to ground,
except in case the module ground is
disconnected
RxD
Receive data output: low = active bus condition
detected; float/high = passive bus condition
detected
CANH
(BUS)
7
8
Bus line transmit input/output
N.C.
GND
GND
N.C.
BAT
6
7
No connection
Ground
GND
Ground
8
Ground
9
No connection
Battery supply input (12 V nom.)
10
11
RTH
(LOAD)
Switched ground pin: pulls the load to ground,
except in case the module ground is
disconnected
CANH
(BUS)
12
Bus line transmit input/output
N.C.
13
14
No connection
Ground
GND
4
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
of signal edges on the bus line. If such edges are detected, this will
be signalled to the CAN controller via the RxD output. Normal
transmission mode will be entered again upon a high level being
applied to the NSTB and EN control inputs. These signals are
typically being provided by a controller device.
FUNCTIONAL DESCRIPTION
The AU5790 is an integrated line transceiver IC that interfaces a
CAN protocol controller to the vehicle’s multiplexed bus line. It is
primarily intended for automotive “Class B” multiplexing applications
in passenger cars using a single wire bus line with ground return.
The achievable bit rate is primarily a function of the network time
constant and the bit timing parameters. For example, the maximum
bus speed is 33 kpbs with bus loading as specified in J2411 for a full
32 node bus, while 41.6 kbps at is possible with modified bus
loading. The AU5790 also supports low-power sleep mode to help
meet ignition-off current draw requirements.
Sleeping bus nodes will generally ignore normal communication on
the bus. They should be activated using the dedicated wake-up
mode. When NSTB is low and EN is high the AU5790 enters
wake-up mode i.e. it sends data with an increased signal level. This
will result in an activation of other bus nodes being attached to the
network.
The protocol controller feeds the transmit data stream to the
transceiver’s TxD input. The AU5790 transceiver converts the TxD
data input to a bus signal with controlled slew rate and waveshaping
to minimize emissions. The bus output signal is transmitted via the
CANH in/output, connected to the physical bus line. If TxD is low,
then a typical voltage of 4 V is output at the CANH pin. If TxD is high
then the CANH output is pulled passive low via the local bus load
The AU5790 also provides a high-speed transmission mode
supporting bit rates up to 100 kbps. If the NSTB input is pulled high
and the EN input is low, then the internal waveshaping function is
disabled, i.e. the bus driver is turned on and off as fast as possible
to support high-speed transmission of data. Consequently, the EMC
performance is degraded in this mode compared to the normal
transmission mode. In high-speed transmission mode the AU5790
supports the same bus signal level as specified for the CANH output
in normal mode.
resistance R . To provide protection against a disconnection of the
T
module ground, the resistor R is connected to the RTH pin of the
T
AU5790. By providing this switched ground pin, no current can flow
from the floating module ground to the bus. The bus receiver detects
the data stream on the bus line. The data signal is output at the RxD
pin being connected to a CAN controller. The AU5790 provides
appropriate filtering to ensure low susceptibility against
electromagnetic interference. Further enhancement is possible with
applying an external capacitor between CANH and ground potential.
The device features low bus output leakage current at power supply
failure situations.
The AU5790 features special robustness at its BAT and CANH pins.
Hence the device is well suited for applications in the automotive
environment. The BAT input is protected against 40 V load dump
and jump start condition. The CANH output is protected against
wiring fault conditions, e.g., short circuit to ground or battery voltage,
as well as typical automotive transients. In addition, an
over-temperature shutdown function with hysteresis is incorporated
protecting the device under system fault conditions. In case of the
chip temperature reaching the trip point, the AU5790 will latch-off
the transmit function. The transmit function is available again after a
small decrease of the chip temperature. The AU5790 contains a
If the NSTB and EN control inputs are pulled low or floating, the
AU5790 enters a low-power or “sleep” mode. This mode is
dedicated to minimizing ignition-off current drain, to enhance system
efficiency. In sleep mode, the bus transmit function is disabled, e.g.
the CANH output is inactive even when TxD is pulled low. An
internal network active detector monitors the bus for any occurrence
power-on reset circuit. For V < 2.5 V, the CANH output drive will
bat
be turned off, the output will be passive, and RxD will be high. For
2.5 V < V < 5.3 V, the CANH output drive may operate normally or
bat
be turned off.
Table 1. Control Input Summary
NSTB
EN
TxD
Don’t Care
Tx-data
Description
CANH
RxD
float (high)
0
0
1
1
0
Sleep mode
0 V
1
1
1
1
Wake-up transmission mode
High-speed transmission mode
Normal transmission mode
0 V, 12 V
0 V, 4 V
0 V, 4 V
bus state
bus state
bus state
0
Tx-data
1
Tx-data
NOTE:
1. RxD outputs the bus state. If the bus level is below the receiver threshold (i.e., all transmitters passive), then RxD will be floating (i.e., high,
considering external pull-up resistance). Otherwise, if the bus level is above the receiver threshold (i.e., at least one transmitter is active),
then RxD will be low.
5
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
ABSOLUTE MAXIMUM RATINGS
According to the IEC 134 Absolute Maximum System: operation is not guaranteed under these conditions; all voltages are referenced to
pin 8 (GND); positive currents flow into the IC, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Supply voltage
Steady state
–0.3
+27
V
V
V
BAT
Short-term supply voltage
Load dump; ISO7637/1 test pulse 5
(SAE J1113, test pulse 5), T < 1s
+40
V
BATld
Transient supply voltage
ISO 7637/1 test pulse 2 (SAE J1113,
test pulse 2), with series diode and
bypass cap of 100 nF between BAT and
GND pins, Note 2.
+100
V
V
BATtr2
Transient supply voltage
ISO 7637/1 pulses 3a and 3b
(SAE J1113 test pulse 3a and 3b),
Note 2.
–150
+100
V
V
V
BATtr3
CANH voltage
V
> 2 V
< 2 V
–10
–16
+18
+18
V
V
V
V
V
BAT
BAT
CANH_1
CANH voltage
V
V
CANH_0
CANHtr1
CANHtr2
CANHtr3
Transient bus voltage
Transient bus voltage
Transient bus voltage
ISO 7637/1 test pulse 1, Notes 1 and 2
ISO 7637/1 test pulse 2, Notes 1 and 2
–100
V
V
V
+100
+100
ISO 7637/1 test pulses 3a, 3b,
Notes 1 and 2
–150
–10
V
Pin RTH voltage
Pin RTH voltage
V
BAT
> 2 V, voltage applied to pin RTH
+18
+18
V
V
RTH1
RTH0
via a 2 kΩ series resistor
V
V
BAT
< 2 V, voltage applied to pin RTH
–16
via a 2 kΩ series resistor
DC voltage on pins TxD, EN, RxD, NSTB
ESD capability of pin BAT
–0.3
–8
+7
+8
V
V
I
Direct contact discharge,
R=1.5 kΩ, C=100 pF
kV
ESD
BAHB
ESD
ESD capability of pin CANH
ESD capability of pin RTH
Direct contact discharge,
R=1.5 kΩ, C=100 pF
–8
–8
–2
2
+8
+8
+2
kV
kV
kV
kΩ
CHHB
ESD
ESD
Direct contact discharge,
R=1.5 kΩ + 3 kΩ, C=100 pF
RTHB
LGHB
ESD capability of pins TxD, NSTB, EN, RxD, and
RTH
Direct contact discharge,
R=1.5 kΩ , C=100 pF
R
Bus load resistance R being connected to pin
Tmin
T
RTH
Operating ambient temperature
–40
–40
–40
+125
+150
+150
T
T
T
°C
°C
amb
stg
vj
Storage temperature
Junction temperature
°C
NOTES:
1. Test pulses are coupled to CANH through a series capacitance of 1 nF.
2. Rise time for test pulse 1: t < 1 µs; pulse 2: t < 100 ns; pulses 3a/3b: t < 5 ns.
r
r
r
6
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
DC CHARACTERISTICS
–40 °C < T
< +125 °C; 5.5 V < V
< 16 V; –0.3 V < V
< 5.5 V; –0.3 V < V
< 5.5 V; –0.3 V < V < 5.5 V; –0.3 V < V < 5.5 V;
RxD
amb
BAT
TxD
NSTB
EN
–1 V < V
< +16 V; bus load resistor at pin RTH: 2 kΩ < R < 9.2 kΩ; total bus load resistance 270 Ω < R < 9.2 kΩ;
CANH
T
L
C < 13.7 nF; 1µs < R
C < 4µs; RxD pull-up resistor 2.2 kΩ < R < 3.0 kΩ; RxD: loaded with C < 30pF to GND;
L d LR
L
L
all voltages are referenced to pin 8 (GND); positive currents flow into the IC;
typical values reflect the approximate average value at V
= 13 V and T
= 25 °C, unless otherwise specified.
BAT
amb
SYMBOL
Pin BAT
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Operating supply voltage
Low battery state
Note 1
5.3
2.5
13
27
V
V
BAT
V
BATL
Part functional or in undervoltage
lockout state
5.3
V
Supply undervoltage lockout state TxD = 1 or 0; check CANH and
RxD are floating
2.5
2
V
BATLO
BATPN
BATPW
BATPH
BATN
I
I
I
I
Passive state supply current in
normal mode
NSTB = 5 V, EN = 5 V, TxD = 5 V
mA
mA
mA
mA
Passive state supply current in
wake-up mode
NSTB = 0 V, EN = 5 V, TxD = 5 V,
Note 2
3
Passive state supply current in
high speed mode
NSTB = 5 V, EN = 0 V, TxD = 5 V,
Note 2
4
NSTB = 5 V, EN = 5 V, TxD = 0 V,
35
Active state supply current in
normal mode
R = 270 Ω, T
= 125 °C
L
amb
T
= 25 °C, –40 °C
40
70
mA
mA
amb
NSTB = 0 V, EN = 5 V, TxD = 0 V,
I
I
I
Active state supply current in
wake-up mode
BATW
BATH
BATS
R = 270 Ω, Note 2,
L
T
amb
= 125 °C
T
amb
= 25 °C, –40 °C, Note 2
90
70
mA
mA
NSTB = 5 V, EN = 0 V, TxD = 0 V,
Active state supply current in
high speed mode
R = 100 Ω, Note 2,
L
T
amb
= 125 °C
T
amb
= 25 °C, –40 °C, Note 2
85
mA
Sleep mode supply current
NSTB = 0 V, EN = 0 V, TxD = 5 V,
RxD = 5 V, –1 V < V < +1 V,
70
100
µA
CANH
5.5 V < V
< 14 V
BAT
–40 °C < T < 125 °C
j
Pin CANH
V
V
V
Bus output voltage in normal
mode
NSTB = 5 V, EN = 5 V,
3.65
9.80
4.1
4.55
min
V
V
V
CANHN
CANHW
CANHWL
R > 270Ω; 5.5 V < V
< 27 V
L
BAT
Bus output voltage in wake-up
mode
NSTB = 0 V, EN = 5 V,
R > 270Ω; 11.3 V < V
< 16 V
(V
, 13)
BAT
L
BAT
Bus output voltage in wake-up
mode, low battery
NSTB = 0 V, EN = 5 V,
R > 270Ω; 5.5 V < V
V
BAT
V
BAT
–
< 11.3 V
BAT
L
1.45
V
Bus output voltage in high-speed
transmission mode
NSTB = 5 V, EN = 0 V,
R > 100Ω; 8 V < V
3.65
–10
–20
–20
4.55
10
V
CANHH
CANHRR
CANHRD
CANHDD
< 16 V
BAT
L
I
I
I
Recessive state output current,
bus recessive
Recessive state or sleep mode,
= –1 V; 0 V < V < 27 V
µA
µA
µA
V
CANH
BAT
Recessive state output current,
bus dominant
Recessive state or sleep mode,
= 10 V; 0 V < V < 16 V
100
100
V
CANH
BAT
Dominant state output current,
bus dominant
TxD = 0 V, normal mode,
high-speed mode and sleep mode;
= 10 V;
V
CANH
0 V < V
< 16 V
BAT
–I
–I
Bus short circuit current,
normal mode
V
= –1 V,
30
60
150
190
mA
mA
CANH_N
CANH
TxD = 0 V; NSTB = 5 V; EN = 5 V
V = –1 V,
CANH
Bus short circuit current,
wake-up mode
CANHW
TxD = 0 V; NSTB = 0 V; EN = 5 V
7
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pin CANH (continued)
–I
CANHH
Bus short circuit current in
high-speed mode
V
= –1 V,
50
190
mA
CANH
TxD = 0 V; NSTB = 5 V; EN = 0 V;
8 V < V
< 16 V
BAT
I
Bus leakage current at loss of
ground
(I_CAN_LG = I_CANH + I_RTH)
0 V < V
< 16 V;
–50
50
µA
CANLG
BAT
see Figure 3 in the test circuits
section
T
T
Thermal shutdown
Note 2
Note 2
155
5
190
15
°C
°C
V
sd
Thermal shutdown hysteresis
Bus input threshold
hys
V
V
V
V
5.8 V < V
all modes except sleep mode
< 27 V,
BAT
1.8
2.2
T
Bus input threshold, low battery
5.5 V < V < 5.8 V,
1.5
2.2
8.1
V
V
TL
TS
TSL
BAT
all modes except sleep mode
Bus input threshold in sleep mode NSTB = 0 V, EN = 0 V,
> 11.3 V
6.15
V
BAT
Bus input threshold in sleep mode,
low battery
NSTB = 0 V, EN = 0 V,
5.5 V < V
V
– 4.3
V
– 3.25
V
BAT
BAT
< 11.3 V
BAT
Pin RTH
V
RTH1
V
RTH2
Voltage on switched ground pin
Voltage on switched ground pin
I
I
= 1 mA
= 6 mA
0.1
1
V
V
RTH
RTH
Pins NSTB, EN
V
V
High level input voltage
Low level input voltage
Input current
5.5 V < V
5.5 V < V
< 27 V
< 27 V
3
V
V
ih
il
BAT
BAT
1
I
i
V = 1 V and V = 5 V
i
15
50
µA
i
Pin TxD
V
itxd
TxD input threshold
5.5 V < V
< 27 V
BAT
1
3
V
–I
TxD low level input current in
normal mode
NSTB = 5 V, EN = 5 V, V
= 0 V
= 5 V
50
180
µA
iltxd
TxD
TxD
–I
ihtxd
TxD high level input current in
sleep mode
NSTB = 0 V, EN = 0 V, V
–5
10
µA
Pin RxD
V
olrxd
RxD low level output voltage
I
= 2.2 mA;
0.45
V
RxD
V
V
V
= 10 V, all modes
CANH
I
I
RxD low level output current
RxD high level leakage
= 5 V; V
= 10 V
3
35
mA
olrxd
RxD
RxD
CANH
CANH
= 5 V; V
= 0 V,
–10
+10
µA
ohrxd
all modes
NOTES:
1. Operation at battery voltages down to 5.3 volts is guaranteed by design. Operation higher than 18 volts (18 V < V
< 27 V) for up to two
BAT
minutes is permitted if the thermal design of the board prevents reaching the thermal protection temperature limit, T , otherwise the device
sd
will self protect. Typically these requirements will be encountered during jump start operation at T
85 °C and V
< 27 V. Refer to the
amb
BAT
“Thermal Characteristics” section of this data sheet, or application note AN2005 for guidance.
2. This parameter is characterized but not subject to production test.
8
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
Dynamic (AC) CHARACTERISTICS for 33 kbps operation
–40 °C < T
< +125 °C; 5.5 V < V
< 16 V; –0.3 V < V
< 5.5 V; –0.3 V < V
< 5.5 V; –0.3 V < V < 5.5 V; –0.3 V < V < 5.5 V;
RxD
amb
BAT
TxD
NSTB
EN
–1 V < V
< +16 V; bus load resistor at pin RTH: 2 kΩ < R < 9.2 kΩ; total bus load resistance 270 Ω < R < 9.2 kΩ;
CANH
T
L
C < 13.7 nF; 1µs < R
C < 4µs; RxD pull-up resistor 2.2 kΩ < R < 3.0 kΩ; RxD: loaded with C < 30pF to GND;
L d LR
L
L
all voltages are referenced to pin 8 (GND); positive currents flow into the IC;
typical values reflect the approximate average value at V = 13 V and T
= 25 °C, unless otherwise specified.
amb
BAT
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pin CANH
V
CANH harmonic content in
normal mode
NSTB = 5 V, EN = 5 V;
70
dBµV
dBAMN
R = 270 Ω, C = 15 nF;
L
L
f
= 20 kHz, 50% duty cycle;
TxD
8 V < V < 16 V;
BAT
0.53 MHz < f < 1.7 MHz, Note 2
V
CANH harmonic content in
wake-up mode
NSTB = 5 V, EN = 0 V;
80
dBµV
dBAMW
R = 270 Ω, C = 15 nF;
L
L
f
= 20 kHz, 50% duty cycle;
TxD
8 V < V < 16 V;
BAT
0.53 MHz < f < 1.7 MHz, Note 2
Pins NSTB, EN
t
t
t
Normal mode to high-speed mode
delay
30
30
30
µs
µs
µs
NH
HN
WN
High-speed mode to normal mode
delay
Wake-up mode to normal mode
delay
8 V < V
< 16 V
BAT
t
t
Normal mode to sleep mode delay
Sleep mode to normal mode delay
500
50
µs
µs
NS
SN
Pin TxD
t
t
t
t
t
t
Transmit delay in normal mode,
bus rising edge
NSTB = 5 V, EN = 5 V;
3
3
3
3
3
3
6.3
µs
µs
µs
µs
µs
µs
TrN
R = 270 Ω, C = 15 nF;
L
L
5.5 V < V
< 27 V;
BAT
measured from the falling edge on
TxD to V = 3.0 V
CANH
Transmit delay in normal mode,
bus falling edge
NSTB = 5 V, EN = 5 V;
9
TfN
R = 270 Ω, C = 15 nF;
L
L
5.5 V < V
< 27 V;
BAT
measured from the rising edge on
TxD to V = 1.0 V
CANH
Transmit delay in wake-up mode,
bus rising edge to normal levels
NSTB = 0 V, EN = 5 V;
6.3
18
TrW
R = 270 Ω, C = 15 nF;
L
L
5.5 V < V
< 27 V;
BAT
measured from the falling edge on
TxD to V = 3.0 V
CANH
Transmit delay in wake-up mode,
bus rising edge to wake-up level
NSTB = 0 V, EN = 5 V;
TrW-S
TfW-3.6
TfW-4.0
R = 270 Ω, C = 15 nF;
L
L
11.3 V < V
< 27 V;
BAT
measured from the falling edge on
TxD to V = 8.9 V
CANH
Transmit delay in wake-up mode,
bus falling edge with 3.6 µs time
constant
NSTB = 0 V, EN = 5 V;
12.7
13.7
R = 270 Ω, C = 13.3 nF;
L
L
5.5 V < V
< 27 V;
BAT
measured from the rising edge on
TxD to V = 1 V, Note 2
CANH
Transmit delay in wake-up mode,
bus falling edge with 4.0 µs time
constant
NSTB = 0 V, EN = 5 V;
R = 270 Ω, C = 15 nF;
L
L
5.5 V < V
< 27 V;
BAT
measured from the rising edge on
TxD to V = 1 V
CANH
9
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pin TxD (continued)
t
Transmit delay in high-speed
mode, bus rising edge
NSTB = 5 V, EN = 0 V;
0.1
1.5
µs
TrHS
R = 100 Ω, C = 15 nF;
L
L
8 V < V
< 16 V;
BAT
measured from the falling edge on
TxD to V = 3.0 V
CANH
t
Transmit delay in high-speed
mode, bus falling edge
NSTB = 5 V, EN = 0 V;
0.2
3
µs
TfHS
R = 100 Ω, C = 15 nF;
L
L
8 V < V
< 16 V;
BAT
measured from the rising edge on
TxD to V = 1.0 V
CANH
Pin RxD
t
t
t
t
Receive delay in normal mode,
bus rising and falling edge
NSTB = 5 V, EN = 5 V;
5.5 V < V < 27 V;
0.3
0.3
0.3
10
1
1
µs
µs
µs
µs
DN
BAT
CANH to RxD time measured from
= 2.0 V to V = 2.5 V
V
CANH
RxD
Receive delay in wake-up mode,
bus rising and falling edge
NSTB = 0 V, EN = 5 V;
5.5 V < V < 27 V;
DW
DHS
DS
BAT
CANH to RxD time measured from
= 2.0 V to V = 2.5 V
V
CANH
RxD
Receive delay in high-speed
mode, bus rising and falling edge
NSTB = 5 V, EN = 0 V;
8 V < V < 16 V;
1
BAT
CANH to RxD time measured from
= 2.0 V to V = 2.5 V
V
CANH
RxD
Receive delay in sleep mode,
bus rising edge
NSTB = 0 V, EN = 0 V;
CANH to RxD time, measured from
= min {(V – 3.78 V),
70
V
CANH
BAT
7.13 V} to V
= 2.5 V
RxD
NOTES:
1. Operation at battery voltages down to 5.3 volts is guaranteed by design. Operation higher than 18 volts (18 V < V
< 27 V) for up to two
BAT
minutes is permitted if the thermal design of the board prevents reaching the thermal protection temperature limit, T , otherwise the device
sd
will self protect. Typically these requirements will be encountered during jump start operation at T
85 °C and V
< 27 V. Refer to the
amb
BAT
“Thermal Characteristics” section of this data sheet, or application note AN2005 for guidance.
2. This parameter is characterized but not subject to production test.
10
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
TxD
50%
t
Tf
t
Tr
CANH
3 V
2 V
1 V
t
D
t
D
RxD
50%
SL01255
NOTE:
1. When AU5790 is in normal, high-speed, or wake-up mode, the transmit delay in rising edge t may be expressed as t , t
, or t
,
TrW
Tr
TrN TrHS
respectively; the transmit delay in falling edge t may be expressed as t , t
, or t , respectively; and the receive delay t as t
,
Tf
TfN TfHS
TfW
D
DN
t
, or t , respectively.
DHS
DW
Figure 2.
Timing Diagrams: Pin TxD, CANH, and RxD
11
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
TEST CIRCUITS
5.1V
TxD
GND
CANH
RTH
BAT
S1
NSTB
AU5790
1 µF
1.5 k
EN
9.1 kΩ
S2
RxD
S3
I_CAN_LG
2.4 kΩ
V
BAT
SL01234
Figure 3.
Loss of ground test circuit
NOTES:
Opening S3 simulates loss of module ground.
Check I_CAN_LG with the following switch positions to simulate loss of ground in all modes:
1. S1 = open = S2
2. S1 = open, S2 = closed
3. S1 = closed, S2 = open
4. S1 = closed = S2
12
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
APPLICATION INFORMATION
The information in this section is not part of the IC specification, but is presented for information purposes only. Additional information on single
wire CAN networks, application circuits, and thermal management are included in application note AN2005.
CAN CONTROLLER
(e.g. SJA1000)
PORT
TX0
RX0
PORT
R
D
+5V
2.4 to
2.7kΩ
1N5060
or equiv.
TxD
RxD
NSTB
EN
+12V
BAT
AU5790
TRANSCEIVER
100 nF
1 to 4.7 µF
GND
CANH
RTH
9.1kΩ,
1%
R
T
L
47 µH
C
L
10%
220 pF
CAN BUS LINE
Note 1 TX0 should be configured to push-pull operation, active low; e.g., Output Control Register = 1E hex.
SL01200
Note 2 Recommended range for the load resistor is 3k < R < 11k.
T
Figure 4.
Application circuit example for the AU5790
AU5790 transceivers may require additional PCB surface at ground pin(s) as heat conductor(s) in order to meet thermal requirements. See
thermal characteristics section for details.
Table 2. Maximum CAN Bit Rate
MODE
MAXIMUM BIT RATE AT 0.35% CLOCK ACCURACY
Normal transmission
33.3 kbps
83.3 kbps
85%
High-speed transmission
Sample point as % of bit time
Bus Time constant, normal mode
1.0 to 4.0 µs
13
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
T =T + P * θ
ja
THERMAL CHARACTERISTICS
j
a
d
The AU5790 provides protection from thermal overload. When the
IC junction temperature reaches the threshold (≈155 °C), the
AU5790 will disable the transmitter drivers, reducing power
dissipation to protect the device. The transmit function will become
available again after the junction temperature drops. The thermal
shutdown hysteresis is about 5 °C.
where: T is junction temperature (°C);
j
T is ambient temperature (°C);
a
P is dissipated power (W);
d
θ
is thermal resistance (°C/W).
ja
Thermal Resistance
Thermal resistance is the ability of a packaged IC to dissipate heat
to its environment. In semiconductor applications, it is highly
dependant on the IC package, PCBs, and airflow. Thermal
resistance also varies slightly with input power, the difference
between ambient and junction temperatures, and soldering material.
In order to avoid this transmit function shutdown, care must be taken
to not overheat the IC during application. The relationships between
junction temperature, ambient temperature, dissipated power, and
thermal resistance can be expressed as:
Figures 5 and 6 show the thermal resistance as the function of the
IC package and the PCB configuration, assuming no airflow.
200
150
100
50
very low
conductance
board
low
conductance
board
high
conductance
board
0
0
50
100
150
200
250
SL01249
Cu area on fused pins (mm2)
Figure 5.
SO-8 Thermal Resistance vs. PCB Configuration, Note 1, 2, 3
150
100
50
very low
conductance
board
low
conductance
board
high
conductance
board
0
0
100
200
300
400
500
SL01250
Cu area on fused pins (mm2)
Figure 6.
SO-14 Thermal Resistance vs. PCB Configuration, Note 1, 2, 3
14
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
Table 3 shows the maximum power dissipation of an AU5790 without tripping the thermal overload protection, for specified combinations of
package, board configuration, and ambient temperature.
Table 3. Maximum power dissipation
Θ
P
tot
JA
Power Dissipation Max.
T = 85 °C T = 125 °C
Thermal Resistance
a
a
Additional Foil Area for
Heat Dissipation
Board Type
SO-8 on High
K/W
103
82
mW
631
793
mW
243
305
Normal traces
Conductance Board
225 Sq. mm of copper
foil attached to pin 8.
SO-8 on Low
Conductance Board
Normal traces
163
119
399
546
153
210
225 Sq. mm of copper
attached to pin 8.
SO-8 on Very Low
Conductance Board
Normal traces
194
135
335
481
129
185
225 Sq. mm of copper
attached to pin 8.
SO-14 on High
Conductance Board
Normal traces
63
50
1032
1300
397
500
105 Sq. mm of copper
attached to each of pins
1, 7, 8, & 14.
SO-14 on Low
Conductance Board
Normal traces
103
70
631
929
243
357
105 Sq. mm of copper
attached to each of pins
1, 7, 8, & 14.
SO-14 on Very Low
Conductance Board
Normal traces
126
82
516
793
198
305
105 Sq. mm of copper
attached to each of pins
1, 7, 8, & 14.
NOTES:
1. The High Conductance board is based on modeling done to EIA/JEDEC Standard JESD51-7. The board emulated contains two one ounce
thick copper ground planes, and top surface copper conductor traces of two ounce (0.071 mm thickness of copper).
2. The Low Conductance board is based on modeling done to EIA/JEDEC Standard EIA/JESD51-3. The board does not contain any ground
planes, and the top surface copper conductor traces of two ounce (0.071 mm thickness of copper).
3. The Very Low Conductance board is based on the EIA/JESD51-3, however the thickness of the surface conductors has been reduced to
0.035 mm (also referred to as 1.0 Ounce copper).
4. The above mentioned JEDEC specifications are available from: http://www.jedec.org/
15
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
Power Dissipation
I
= V
/R
CANHN LOAD
LOAD
Power dissipation of an IC is the major factor determining junction
temperature. AU5790 power dissipation in active and passive states
are different. The average power dissipation is:
I
= I
+ I
LOAD INT
BATN
where:
I
is an active state current dissipated within the IC in
INT
normal mode.
P
tot
= P *Dy + P
* (1-Dy)
INT
PNINT
I
will decrease slightly when the node number
INT
where:
P
P
P
is total dissipation power;
tot
decreases. To simplify this analysis, we will assume I
fixed.
is
INT
is dissipation power in an active state;
INT
is dissipation power in a passive state;
I
= I
(32 nodes) – I
(32 nodes)
LOAD
PNINT
INT
BATN
Dy is duty cycle, which is the percentage of time that TxD
is in an active state during any given time duration.
I
(32 nodes) may be found in the DC Characteristics
BATN
table.
At passive state there is no current going into the load. So
all of the supply current is dissipated inside the IC.
A power dissipation example follows. The assumed values
are chosen from specification and typical applications.
P
PNINT
= V
* I
BAT BATPN
Assumptions:
where:
V
BAT
is the battery voltage;
V
BAT
= 13.4 V
R = 9.1 kΩ
32 nodes
T
I
is the passive state supply current in normal mode.
BATPN
In an active state, part of the supply current goes to the
load, and only part of the supply current dissipates inside
the IC, causing an incremental increase in junction
temperature.
I
= 2 mA
BATPN
I
(32 nodes) = 35 mA
BATN
V
= 4.55 V
CANHN
Duty cycle = 50%
P
INT
= P
– P
LOADN
Computations:
BATAN
where:
where:
P
is active state battery supply power in normal
R
= 9.1 kΩ / 32 = 284.4 Ω
BATAN
LOAD
mode;
P
I
P
= 13.4 V × 2 mA = 26.8 mW
= 4.55 V / 284.4 Ω = 16mA
= 4.55 V × 16 mA = 72.8 mW
= 35 mA - 16 mA = 19 mA
= 13.4 V × 35 mA = 469 mW
PNINT
LOAD
P
BATAN
= V
* I
BAT BATAN
LOADN
P
is load power consumption in normal mode.
I
LOADN
INT
P
BATAN
P
= V
* I
CANHN LOADN
LOADN
P
= 469 mW - 72.8 mW = 396.2 mW
INT
P
tot
= 396.2 mW × 50% + 26.8 mW × (1-50%) = 211.5 mW
I
is active state supply current in normal mode;
BATAN
Additional examples with various node counts are shown in Table 4.
V
is bus output voltage in normal mode;
CANHN
I
is current going through load in normal mode.
LOADN
Table 4. Representative Power Dissipation Analyses
R
I
P
PNINT
V
I
I
P
INT
P
tot
LOAD
BATPN
CANHN
LOAD
BATN
Nodes
2
(Ω)
V
BAT
(V)
(mA)
(mW)
26.8
26.8
26.8
26.8
53
(V)
(mA)
(mA)
I
(mA)
(mW)
263.5
298.9
343.1
396.2
525.5
613.3
723
Dcycle
0.5
(mW)
145.1
162.8
184.9
211.5
289.2
333.1
388
INT
4550
910
13.4
13.4
13.4
13.4
26.5
26.5
26.5
26.5
2
2
2
2
2
2
2
2
4.55
4.55
4.55
4.55
4.55
4.55
4.55
4.55
1
20
19
10
20
32
2
5
24
19
19
19
19
19
19
19
0.5
455
10
16
1
29
0.5
284.4
4550
910
35
0.5
20
0.5
10
20
32
53
5
24
0.5
455
53
10
16
29
0.5
284.4
53
35
854.7
0.5
453.8
By knowing the maximum power dissipation, and the operation ambient temperature, the required thermal resistance without tripping the
thermal protection can be calculated, as shown in Figure 7. Then from Figure 5 or 6, a suitable PCB can be selected.
16
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
500
450
400
350
300
250
200
150
100
50
Ptot = 453.8 mW
(Vbat = 26.5 V, 32 nodes)
Ptot = 333.1 mW
(Vbat = 26.5 V, 10 nodes)
Ptot = 211.5 mW
(Vbat = 13.4 V, 32 nodes)
0
50
60
70
80
90
100
110
120
130
SL01256
AMBIENT TEMPERATURE (°C)
Figure 7.
Required Thermal Resistance vs. Ambient Temperature and Power Dissipation
17
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
18
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
19
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
Data sheet status
Product
status
Definitions
[1]
Data sheet status
[2]
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on
the Internet at URL http://www.semiconductors.philips.com.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 2001
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 05-01
Document order number:
9397 750 08401
Philips
Semiconductors
相关型号：
AU5790D8
IC DATACOM, INTERFACE CIRCUIT, PDSO8, 3.90 MM, PLASTIC, MS-012, SOT-96-1, SOP-8, Network Interface
NXP
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