A3V09H521-24SR6 [NXP]
RF Power Field-Effect Transistor;
| 型号： | A3V09H521-24SR6 |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总8页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A3V09H521--24S
Rev. 0, 02/2019
NXP Semiconductors
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
A3V09H521--24SR6
This 107 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 720 to
960 MHz.
900 MHz
720–960 MHz, 107 W AVG., 48 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQA = 800 mA, VGSB = 0.7 Vdc, Pout = 107 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
920 MHz
940 MHz
960 MHz
(dB)
18.6
18.6
18.5
(%)
53.6
53.2
53.5
7.6
7.8
7.9
–31.1
–33.3
–34.7
Features
Advanced high performance in--package Doherty
NI--1230S--4L2L
Greater negative gate--source voltage range for improved Class C
operation
Designed for digital predistortion error correction systems
(1)
6
5
VBW
A
Carrier
RF /V
1
2
RF /V
outA DSA
inA GSA
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
(1)
VBW
B
(Top View)
Figure 1. Pin Connections
1. Device cannot operate with V
current
DD
supplied through pin 3 and pin 6.
2019 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +100
–6.0, +10
55, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.37
C/W
JC
Case Temperature 74C, 107 W Avg., W--CDMA, 48 Vdc, I
= 800 mA,
DQA
V
= 0.7 Vdc, 940 MHz
GSB
Table 3. ESD Protection Characteristics
Test Methodology
Class
2
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C3
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 100 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 55 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GS
DS
On Characteristics — Side A, Carrier
Gate Threshold Voltage
V
1.3
2.0
0.1
1.8
2.5
0.3
2.3
2.8
0.5
Vdc
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 137 Adc)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I = 800 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
DA
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.37 Adc)
V
DS(on)
GS
D
On Characteristics — Side B, Peaking
Gate Threshold Voltage
V
1.3
0.1
1.8
0.3
2.3
0.5
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 274 Adc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.74 Adc)
V
DS(on)
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)
A3V09H521--24SR6
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In NXP Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I
= 800 mA, V
= 0.7 Vdc, P = 107 W Avg.,
DD
DQA
GSB
out
f = 960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
17.6
51.0
7.4
18.5
53.5
7.9
20.6
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
ACPR
—
dB
dBc
Adjacent Channel Power Ratio
—
–34.7
–31.0
(2)
Load Mismatch
(In NXP Doherty Test Fixture, 50 ohm system) I
= 800 mA, V
= 0.7 Vdc, f = 940 MHz, 12 sec(on), 10% Duty
GSB
DQA
Cycle
VSWR 10:1 at 55 Vdc, 776 W Pulsed CW Output Power
(3 dB Input Overdrive from 568 W Pulsed CW Rated Power)
No Device Degradation
(2)
Typical Performance
(In NXP Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I
= 800 mA, V
= 0.7 Vdc,
GSB
DD
DQA
920–960 MHz Bandwidth
(3)
P
@ 3 dB Compression Point
P3dB
—
—
661
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
–21
the 920–960 MHz frequency range)
VBW Resonance Point
VBW
—
80
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P = 107 W Avg.
G
—
—
0.1
—
—
dB
out
F
Gain Variation over Temperature
G
0.01
dB/C
(–40C to +85C)
Output Power Variation over Temperature
P1dB
—
0.003
—
dB/C
(–40C to +85C)
Table 5. Ordering Information
Device
Tape and Reel Information
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
Package
A3V09H521--24SR6
NI--1230S--4L2L
1. Part internally matched both on input and output.
2. Measurement made with device in an asymmetrical Doherty configuration.
3. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A3V09H521--24SR6
RF Device Data
NXP Semiconductors
3
C12
V
GGA
V
DDA
C14
C16
C1
C13
C2
R2
D119008
R1
C17
C15
C20
C4
C5
C18
C19
C3
C
P
C32
C29
C21
A3V09H521-24S
Rev. 0
Z1
C30
C8
C22*
C23
cut out
area
C7
C6
C9
C31
C33
C24
R3
C10
C25*
C26
C27
Cꢀ11
V
GGB
V
DDB
C28
aaa--033075
*C22 and C25 are mounted vertically.
Figure 2. A3V09H521--24SR6 Test Circuit Component Layout
Table 6. A3V09H521--24SR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
TDK
C1, C11, C13, C14, C16, C24,
C26, C27
10 F Chip Capacitor
C5750X7S2A106M230KB
C2, C5, C8, C10, C15, C18, C19 39 pF Chip Capacitor
ATC600F390JT250XT
ATC600F3R3BT250XT
ATC600F8R2BT250XT
ATC600F2R7BT250XT
ATC600F5R6BT250XT
MCGPR100V477M16X32
ATC600F3R0BT250XT
ATC600F4R7BT250XT
ATC600F4R3BT250XT
ATC100B220JT500XT
ATC100B390JT500XT
ATC600F1R2BT250XT
ATC600F1R5BT250XT
ATC100B111JT300XT
CW12010T0050GBK
CRCW12066R80FKEA
CMX09Q02
ATC
C3, C30
C4, C9
C6
3.3 pF Chip Capacitor
ATC
8.2 pF Chip Capacitor
ATC
2.7 pF Chip Capacitor
ATC
C7
5.6 pF Chip Capacitor
ATC
C12, C28
C17, C32
C20, C23
C21
470 F, 100 V Electrolytic Capacitor
3.0 pF Chip Capacitor
Multicomp
ATC
4.7 pF Chip Capacitor
ATC
4.3 pF Chip Capacitor
ATC
C22
22 pF Chip Capacitor
ATC
C25
39 pF Chip Capacitor
ATC
C29
1.2 pF Chip Capacitor
ATC
C31
1.5 pF Chip Capacitor
ATC
C33
110 pF Chip Capacitor
ATC
R1
50 , 4 W Chip Resistor
6.8 , 1/4 W Chip Resistor
800–1000 MHz, 90, 2 dB Asymmetric Coupler
ATC
R2, R3
Z1
Vishay
RN2 Technologies
MTL
PCB
RO4350B, 0.020, = 3.66
D119008
r
A3V09H521--24SR6
RF Device Data
NXP Semiconductors
4
PACKAGE DIMENSIONS
A3V09H521--24SR6
RF Device Data
NXP Semiconductors
5
A3V09H521--24SR6
RF Device Data
NXP Semiconductors
6
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2019
Initial release of data sheet
A3V09H521--24SR6
RF Device Data
NXP Semiconductors
7
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E 2019 NXP B.V.
Document Number: A3V09H521--24S
Rev. 0, 02/2019
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