935325969147 [NXP]
Wide Band Medium Power Amplifier;
| 型号： | 935325969147 |
| 厂家： | 
NXP |
| 描述： | Wide Band Medium Power Amplifier 射频 微波 |
| 文件： | 总20页 (文件大小：1209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMZ25332B4
Rev. 1, 12/2017
NXP Semiconductors
Technical Data
2 W High Gain Power Amplifier for
MMZ25332B4T1
Cellular Infrastructure
InGaP GaAs HBT
The MMZ25332B4 is a versatile 2--stage power amplifier targeted at driver
and pre--driver applications for macro and micro base stations and final stage
applications for small cells. Its versatile design allows operation in any
frequency band from 1500 to 2700 MHz providing gain of more than 26.5 dB.
The device operates off a 5 V supply, and its bias currents and portions of the
matching networks are adjustable for optimum performance in any specific
application. It is housed in a QFN 4 x 4 surface mount package which allows for
maximum via hole pattern. The MMZ25332B4 offers exceptional reliability,
ruggedness and ESD performance.
1500–2700 MHz, 26.5 dB, 33 dBm
InGaP HBT LINEAR AMPLIFIER
Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA
P
G
(dB)
ACPR
(dBc)
I
CC
(mA)
out
ps
QFN 4 4--24L
Frequency
(dBm)
Test Signal
2140 MHz
2350 MHz
2600 MHz
21.7
21.5
22.5
26.5
26.6
26.7
–48
–48
–48
441
446
453
W--CDMA
LTE
LTE
Features
Frequency: 1500–2700 MHz
P1dB: 33 dBm @ 2500 MHz
Power gain: 26.5 dB @ 2500 MHz
OIP3: 48 dBm @ 2500 MHz
EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
Active bias control (adjustable externally)
Power down control via VBIAS
Single 3 to 5 volt supply
Single--ended power detector
Cost--effective 24--pin, 4 mm QFN surface mount plastic package
V
P
DET
CC1
V
V
/RF
/RF
CC2
out
out
RF
CC2
in
V
/RF
CC2
out
BIAS
CIRCUIT
V
V
V
BIAS
BA1
BA2
Figure 1. Functional Block Diagram
2015, 2017 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
V
6
1200
V
mA
dBm
C
CC
Supply Current
I
CC
RF Input Power
P
30
in
Storage Temperature Range
Junction Temperature
T
stg
–65 to +150
175
T
C
J
Table 2. Thermal Characteristics
(1)
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 95C, V = V
Symbol
Value
Unit
R
C/W
JC
= V = 5 Vdc
BIAS
Stage 1
Stage 2
70
22
CC1
CC2
Table 3. Electrical Characteristics (V
= V
= V
= 5 Vdc, 2600 MHz, T = 25C, 50 ohm system, in NXP CW
BIAS A
CC1
CC2
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Intercept Point, Two--Tone CW
Supply Current
G
23.5
—
26
–13
–18
33
—
—
dB
dB
p
IRL
ORL
P1dB
OIP3
—
—
dB
—
—
dBm
dBm
mA
V
—
48
—
I
368
—
392
5
415
—
CQ
Supply Voltage
V
CC
Table 4. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2
B
IV
Table 5. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
Table 6. Ordering Information
Device
1
260
C
Tape and Reel Information
Package
QFN 4 4--24L
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
MMZ25332B4T1
T1 Suffix = 1,000 Units, 12 mm Tape Width, 13--inch Reel
N.C. N.C. N.C. N.C.
V
P
CC1 DET
24
23
22
21
20
19
1
2
3
18 N.C.
N.C.
N.C.
V
/RF
out
CC2
17
16
15
14
13
V
/RF
CC2
out
out
N.C.
V
/RF
CC2
RF
4
5
6
in
N.C.
N.C.
N.C.
N.C.
7
8
9
10
11
12
N.C.
N.C. N.C.
V
V
V
BA1 BA2 BIAS
(Top View)
Note: Exposed backside of the package is DC and RF
ground. N.C. can be connected to GND.
Figure 2. Pin Connections
MMZ25332B4T1
RF Device Data
NXP Semiconductors
2
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
V
P
CC1
DET
L1
C10
C8
C9
C5
24
23
22
21
20
19
L2
V
CC2
1
2
3
4
5
6
18
C12 C11
17
16
15
14
13
RF
INPUT
RF
OUTPUT
Z1
C1
C4
C2
C3
ACTIVE BIAS CIRCUIT
7
8
9
10
11
12
R1
R2
V
BIAS
C6
C7
Z1
0.074 0.02 Microstrip
Figure 3. MMZ25332B4T1 Test Circuit Schematic
Table 7. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
22 pF Chip Capacitors
Part Number
04023J22R0BBS
Manufacturer
AVX
C1, C4
C2
2 pF Chip Capacitor
04023J2R0BBS
AVX
C3
1.8 pF Chip Capacitor
8.2 pF Chip Capacitor
1000 pF Chip Capacitors
1 uF Chip Capacitors
470 pF Chip Capacitor
4.7 F Chip Capacitor
12 nH Chip Inductor
04023J1R8BBS
AVX
C5
04023J8R2BBS
AVX
C6, C9, C12
C7, C8
C10
C11
GCM155R71E103KA37
GRM155R61A105KE15
GRM1555C1H471JA01
GRM188R60J475KE19
0603HC-12NX
Murata
Murata
Murata
Murata
Coilcraft
Coilcraft
Yageo
Yageo
MTL
L1
L2
6.8 nH Chip Inductor
0603HC-6N8X
R1
1200 , 1/16 W Chip Resistor
330 , 1/16 W Chip Resistor
RC0402JR--071K2L
RC0402JR--07330L
MG3044
R2
PCB
Rogers RO4350B, 0.010, = 3.66
r
MMZ25332B4T1
RF Device Data
NXP Semiconductors
3
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
C11
C8
C9
C10
C12
L2
C5
RF
RF
OUT
IN
L1
C4
C1
C3
C2
C6
C7
R2
R1
QFN 44--24D
Rev. 0
MG3044
PCB actual size: 1.30 1.46.
(1) V [Board] supplies V
, V
BA1
and V
[Device].
BIAS
BIAS
BA2
Figure 4. MMZ25332B4T1 Test Circuit Component Layout
Table 7. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
22 pF Chip Capacitors
Part Number
04023J22R0BBS
Manufacturer
AVX
C1, C4
C2
2 pF Chip Capacitor
04023J2R0BBS
AVX
C3
1.8 pF Chip Capacitor
8.2 pF Chip Capacitor
1000 pF Chip Capacitors
1 uF Chip Capacitors
470 pF Chip Capacitor
4.7 F Chip Capacitor
12 nH Chip Inductor
04023J1R8BBS
AVX
C5
04023J8R2BBS
AVX
C6, C9, C12
C7, C8
C10
C11
GCM155R71E103KA37
GRM155R61A105KE15
GRM1555C1H471JA01
GRM188R60J475KE19
0603HC-12NX
Murata
Murata
Murata
Murata
Coilcraft
Coilcraft
Yageo
Yageo
MTL
L1
L2
6.8 nH Chip Inductor
0603HC-6N8X
R1
1200 , 1/16 W Chip Resistor
330 , 1/16 W Chip Resistor
RC0402JR--071K2L
RC0402JR--07330L
MG3044
R2
PCB
Rogers RO4350B, 0.010, = 3.66
r
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ25332B4T1
RF Device Data
NXP Semiconductors
4
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
32
–8
–10
–12
30
–40C
28
25C
26
85C
–14
–16
–18
85C
–40C
24
25C
22
V
= V
= V
= 5 Vdc
BIAS
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
CC1
CC2
20
2400
2400
2480
2560
2640
2720
2800
2480
2560
2640
2720
2800
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 6. S21 versus Frequency versus
Temperature
Figure 5. S11 versus Frequency versus
Temperature
–8
–12
–16
–20
–40C
85C
–24
–28
25C
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
2400
2480
2560
2640
2720
2800
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency versus
Temperature
MMZ25332B4T1
RF Device Data
NXP Semiconductors
5
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
450
–33
–36
–39
–42
–45
–48
V
= V
= V
= 5 Vdc, f = 2600 MHz
BIAS
V
= V
= V
= 5 Vdc, f = 2600 MHz
BIAS
CC1
CC2
CC1
CC2
400
350
300
250
Single--Carrier W--CDMA 3GPP TM1 Unclipped
Single--Carrier W--CDMA 3GPP TM1 Unclipped
–40C
25C
85C
I
CC2
CC1
–51
–54
200
150
–40C
25C
–57
–60
I
-- 4 0 C
85C
85C
25C
100
50
–63
10
12
14
16
P , OUTPUT POWER (dBm)
out
18
20
22
24
26
10
12
14
16
18
20
22
24
26
P
, OUTPUT POWER (dBm)
out
Figure 8. ACPR versus Output Power
versus Temperature
Figure 9. Stage Collector Current versus Output
Power versus Temperature
2
32
30
28
26
V
= V
= V
= 5 Vdc, f = 2600 MHz
BIAS
V
= V
= V
= 5 Vdc, f = 2600 MHz
BIAS
CC1
CC2
CC1
CC2
1.8
1.6
Single--Carrier W--CDMA 3GPP TM1 Unclipped
Single--Carrier W--CDMA 3GPP TM1 Unclipped
–40C
Minimum Temperature Variation
1.4
1.2
1
25C
85C
–40C
85C
0.8
0.6
0.4
25C
24
22
20
0.2
0
10
12
14
16
18
20
22
24
26
10
12
14
16
18
20
22
24
26
P
, OUTPUT POWER (dBm)
P
, OUTPUT POWER (dBm)
out
out
Figure 11. Power Detector versus Output Power
versus Temperature
Figure 10. Power Gain versus Output Power
versus Temperature
MMZ25332B4T1
RF Device Data
NXP Semiconductors
6
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
V
P
CC1
DET
L1
C6
C8
C9
C5
24
23
22
21
20
19
L2
V
CC2
1
2
3
4
5
6
18
C10 C11
17
16
15
14
13
RF
INPUT
RF
OUTPUT
Z1
C1
C4
C2
C3
ACTIVE BIAS CIRCUIT
7
8
9
10
11
12
R1
R2
V
BIAS
C7
0.12 0.02 Microstrip
Z1
Figure 12. MMZ25332B4T1 Test Circuit Schematic
Table 8. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
22 pF Chip Capacitors
Part Number
04023J22R0BBS
Manufacturer
AVX
C1, C4
C2
2.4 pF Chip Capacitor
2.2 pF Chip Capacitor
6.8 pF Chip Capacitor
470 pF Chip Capacitor
1 F Chip Capacitors
1000 pF Chip Capacitors
4.7 F Chip Capacitor
12 nH Chip Inductor
04023J2R4BBS
AVX
C3
04023J2R2BBS
AVX
C5
04023J6R8BBS
AVX
C6
GRM1555C1H471JA01
GRM155R61A105KE15
GCM155R71E102KA37
GRM188R60J475KE19
0603HC-12NX
Murata
Murata
Murata
Murata
Coilcraft
Toko
C7, C8
C9, C10
C11
L1
L2
5.6 nH Chip Inductor
LL1608-FSL5N6S
RC0402JR--071K2L
RC0402JR--07330L
MG3044
R1
1.2 k, 1/16 W Chip Resistor
330 , 1/16 W Chip Resistor
Yageo
Yageo
MTL
R2
PCB
Rogers RO4350B, 0.010, = 3.66
r
MMZ25332B4T1
RF Device Data
NXP Semiconductors
7
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
C11
C8
C9
C6
C10
L2
C5
RF
RF
OUT
IN
L1
C4
C1
C2
C3
C7
R2
R1
QFN 44--24D
Rev. 0
MG3044
PCB actual size: 1.30 1.46.
(1) V [Board] supplies V
, V
BA1
and V
[Device].
BIAS
BIAS
BA2
Figure 13. MMZ25332B4T1 Test Circuit Component Layout
Table 8. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
22 pF Chip Capacitors
Part Number
04023J22R0BBS
Manufacturer
AVX
C1, C4
C2
2.4 pF Chip Capacitor
2.2 pF Chip Capacitor
6.8 pF Chip Capacitor
470 pF Chip Capacitor
1 F Chip Capacitors
1000 pF Chip Capacitors
4.7 F Chip Capacitor
12 nH Chip Inductor
04023J2R4BBS
AVX
C3
04023J2R2BBS
AVX
C5
04023J6R8BBS
AVX
C6
GRM1555C1H471JA01
GRM155R61A105KE15
GCM155R71E102KA37
GRM188R60J475KE19
0603HC-12NX
Murata
Murata
Murata
Murata
Coilcraft
Toko
C7, C8
C9, C10
C11
L1
L2
5.6 nH Chip Inductor
LL1608-FSL5N6S
RC0402JR--071K2L
RC0402JR--07330L
MG3044
R1
1.2 k, 1/16 W Chip Resistor
330 , 1/16 W Chip Resistor
Yageo
Yageo
MTL
R2
PCB
Rogers RO4350B, 0.010, = 3.66
r
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ25332B4T1
RF Device Data
NXP Semiconductors
8
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
29
–12
–13
–14
–15
–16
28
27
26
25
–17
–18
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
24
1900
2000
2100
f, FREQUENCY (MHz)
2200
2300
1900
2000
2100
f, FREQUENCY (MHz)
2200
2300
Figure 15. S21 versus Frequency
Figure 14. S11 versus Frequency
–8
–12
–16
–20
–24
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
–28
1900
2000
2100
2200
2300
f, FREQUENCY (MHz)
Figure 16. S22 versus Frequency
MMZ25332B4T1
RF Device Data
NXP Semiconductors
9
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
500
–40
–42
–44
–46
–48
–50
–52
–54
–56
–58
–60
–62
–64
–66
V
= V
= V
= 5 Vdc, f = 2140 MHz
BIAS
V
= V
= V
= 5 Vdc, f = 2140 MHz
BIAS
CC1
CC2
CC1
CC2
450
Single--Carrier W--CDMA 3GPP TM1 Unclipped
Single--Carrier W--CDMA 3GPP TM1 Unclipped
400
350
300
I
CC2
250
200
150
I
CC1
100
50
0
10
12
14
16
P , OUTPUT POWER (dBm)
out
18
20
22
24
26
10
12
14
16
18
20
22
24
26
P
, OUTPUT POWER (dBm)
out
Figure 17. ACPR versus Output Power
Figure 18. Stage Collector Current versus
Output Power
2
28
27
V
= V
= V
= 5 Vdc, f = 2140 MHz
BIAS
CC1
CC2
V
= V
= V
= 5 Vdc, f = 2140 MHz
BIAS
CC1
CC2
1.8
Single--Carrier W--CDMA 3GPP TM1 Unclipped
Single--Carrier W--CDMA 3GPP TM1 Unclipped
1.6
1.4
1.2
26
25
1
0.8
0.6
24
23
0.4
0.2
0
10
12
14
16
, OUTPUT POWER (dBm)
out
18
20
22
24
26
10
12
14
16
18
22
24
26
20
P
P
, OUTPUT POWER (dBm)
out
Figure 20. Power Detector versus Output Power
Figure 19. Power Gain versus Output Power
MMZ25332B4T1
RF Device Data
NXP Semiconductors
10
50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION
V
P
CC1
DET
L1
C6
C8
C9
C5
24
23
22
21
20
19
L2
V
CC2
1
2
3
4
5
6
18
C10 C11
17
16
15
14
13
RF
INPUT
RF
OUTPUT
Z1
C1
C4
C2
C3
ACTIVE BIAS CIRCUIT
7
8
9
10
11
12
R1
R2
V
BIAS
C7
0.074 0.02 Microstrip
Z1
Figure 21. MMZ25332B4T1 Test Circuit Schematic
Table 9. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
22 pF Chip Capacitors
Part Number
04023J22R0BBS
Manufacturer
AVX
C1, C4
C2
2.0 pF Chip Capacitor
2.2 pF Chip Capacitor
8.2 pF Chip Capacitor
470 pF Chip Capacitor
1 F Chip Capacitors
1000 pF Chip Capacitors
4.7 F Chip Capacitor
12 nH Chip Inductor
04023J2R4BBS
AVX
C3
04023J2R2BBS
AVX
C5
04023J6R8BBS
AVX
C6
GRM1555C1H471JA01
GRM155R61A105KE15
GCM155R71E102KA37
GRM188R60J475KE19
0603HC-12NX
Murata
Murata
Murata
Murata
Coilcraft
Toko
C7, C8
C9, C10
C11
L1
L2
6.8 nH Chip Inductor
LL1608-FSL5N6S
RC0402JR--071K2L
RC0402JR--07330L
MG3044
R1
1.2 k, 1/16 W Chip Resistor
330 , 1/16 W Chip Resistor
Yageo
Yageo
MTL
R2
PCB
Rogers RO4350B, 0.010, = 3.66
r
MMZ25332B4T1
11
RF Device Data
NXP Semiconductors
50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION
C11
C8
C9
C6
C10
L2
C5
RF
RF
OUT
IN
L1
C4
C1
C2
C3
C7
R2
R1
QFN 44--24D
Rev. 0
MG3044
PCB actual size: 1.30 1.46.
(1) V [Board] supplies V
, V
BA1
and V
[Device].
BIAS
BIAS
BA2
Figure 22. MMZ25332B4T1 Test Circuit Component Layout
Table 9. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
22 pF Chip Capacitors
Part Number
04023J22R0BBS
Manufacturer
AVX
C1, C4
C2
2.0 pF Chip Capacitor
2.2 pF Chip Capacitor
8.2 pF Chip Capacitor
470 pF Chip Capacitor
1 F Chip Capacitors
1000 pF Chip Capacitors
4.7 F Chip Capacitor
12 nH Chip Inductor
04023J2R4BBS
AVX
C3
04023J2R2BBS
AVX
C5
04023J6R8BBS
AVX
C6
GRM1555C1H471JA01
GRM155R61A105KE15
GCM155R71E102KA37
GRM188R60J475KE19
0603HC-12NX
Murata
Murata
Murata
Murata
Coilcraft
Toko
C7, C8
C9, C10
C11
L1
L2
6.8 nH Chip Inductor
LL1608-FSL5N6S
RC0402JR--071K2L
RC0402JR--07330L
MG3044
R1
1.2 k, 1/16 W Chip Resistor
330 , 1/16 W Chip Resistor
Yageo
Yageo
MTL
R2
PCB
Rogers RO4350B, 0.010, = 3.66
r
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ25332B4T1
RF Device Data
NXP Semiconductors
12
50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION
–12
–13
–14
–15
–16
29
28
27
26
25
–17
–18
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
24
2200
2200
2250
2300
2350
2400
2450
2500
2250
2300
2350
2400
2450
2500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 23. S11 versus Frequency
Figure 24. S21 versus Frequency
–12
–16
–20
–24
–28
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
–32
2200
2300
2400
2500
f, FREQUENCY (MHz)
Figure 25. S22 versus Frequency
MMZ25332B4T1
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50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION
500
–40
–42
V
= V
= V
= 5 Vdc, f = 2350 MHz
BIAS
V
= V
= V
= 5 Vdc, f = 2350 MHz
BIAS
CC1
CC2
CC1
CC2
450
Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB
Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB
–44
–46
–48
–50
–52
–54
–56
–58
–60
–62
400
350
300
I
CC2
250
200
150
I
CC1
100
50
0
10
12
14
P
16
, OUTPUT POWER (dBm)
out
18
20
22
24
10
12
14
16
18
20
22
24
P
, OUTPUT POWER (dBm)
out
Figure 26. ACPR versus Output Power
Figure 27. Stage Collector Current versus
Output Power
1.6
1.4
1.2
1
28
27
V
= V
= V
= 5 Vdc, f = 2350 MHz
BIAS
CC1
CC2
V
= V
= V
= 5 Vdc, f = 2350 MHz
BIAS
CC1
CC2
Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB
Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB
26
25
0.8
0.6
0.4
0.2
0
24
23
10
12
14
P
16
18
20
22
24
10
12
14
P
16
18
22
24
20
, OUTPUT POWER (dBm)
, OUTPUT POWER (dBm)
out
out
Figure 29. Power Detector versus Output Power
Figure 28. Power Gain versus Output Power
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0.50
3.00
4.40
0.30
2.6 2.6 solder pad with thermal
via structure. All dimensions in mm.
Figure 30. PCB Pad Layout for 24--Lead QFN 4 4
MA11
WLYW
Figure 31. Product Marking
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where NXP is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local NXP Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Dec. 2015
Dec. 2017
Initial Release of Data Sheet
Fig. 31, Product Marking: updated to show location of Pin 1 on Product Marking, p. 15
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NXP Semiconductors
19
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granted hereunder to design or fabricate any integrated circuits based on the information
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E 2015, 2017 NXP B.V.
Document Number: MMZ25332B4
Rev. 1, 12/2017
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