935313167528 [NXP]
RF Power Field-Effect Transistor;
| 型号： | 935313167528 |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总14页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A2T18S260W12N
Rev. 0, 2/2016
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
A2T18S260W12NR3
This 56 W RF power LDMOS transistor is designed for cellular base station
applications requiring very wide instantaneous bandwidth capability covering
the frequency range of 1805 to 1880 MHz.
1800 MHz
1805–1880 MHz, 56 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 1500 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
1805 MHz
1840 MHz
1880 MHz
(dB)
18.1
18.5
18.7
(%)
33.1
33.5
34.4
6.9
7.0
6.8
–34.7
–35.1
–34.4
–15
–23
–12
Features
OM--880X--2L2L
PLASTIC
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
(1)
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Optimized for Doherty Applications
4
3
VBW
RF /V
in GS
1
RF /V
out DS
(1)
VBW
2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
1. Device can operate with V current
DD
supplied through pin 2 and pin 4 as long
as the device’s average output power is
less than 90 watts.
Freescale Semiconductor, Inc., 2016. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +65
–6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +125
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.23
C/W
JC
Case Temperature 81C, 56 W CW, 28 Vdc, I
= 1500 mA, 1840 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Class
2
B
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
5
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 300 Adc)
V
V
1.4
2.1
1.8
2.6
2.2
2.9
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1500 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 3 Adc)
V
0.05
0.17
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1500 mA, P = 56 W Avg., f = 1880 MHz,
DD
DQ
out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
17.0
31.5
6.5
—
18.7
34.4
6.8
19.5
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
dB
dBc
dB
–34.4
–12
–31.5
–8
—
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I = 1500 mA, f = 1840 MHz, 12 sec(on), 10% Duty Cycle
DQ
VSWR 10:1 at 32 Vdc, 295 W Pulsed CW Output Power
(3 dB Input Overdrive from 251 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1500 mA, 1805–1880 MHz Bandwidth
DD
DQ
P
@ 1 dB Compression Point, Pulsed CW
P1dB
—
—
280
–13
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz frequency range.)
VBW Resonance Point
VBW
—
90
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 75 MHz Bandwidth @ P = 56 W Avg.
G
—
—
0.4
—
—
dB
out
F
Gain Variation over Temperature
G
0.011
dB/C
(–30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.005
—
dB/C
(–30C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
A2T18S260W12NR3
R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel
OM--880X--2L2L
1. Part internally matched both on input and output.
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
3
V
GG
V
DD
C19
C5 C6
C1
C9
C12
C3
C4
C14
C16
R1
C10
C18
C15
C13
R2
C17
C7
C8
C11
C2
V
GG
A2T18S260W12N
Rev. 2
D74096
Figure 2. A2T18S260W12NR3 Test Circuit Component Layout
Table 7. A2T18S260W12NR3 Test Circuit Component Designations and Values
Part
Description
4.7 F Chip Capacitors
Part Number
Manufacturer
TDK
C1, C2, C3, C4, C5, C6, C7, C8
C4532X7S2A475M230KB
C9, C10, C11, C12, C13
15 pF Chip Capacitors
GQM2195C2E150FB12D
GQM2195C2ER90BB12D
GQM2195C2E1R0BB12D
GQM2195C2ER80BB12D
MCGPR63V477M13X26-RH
WCR0805-2R2FI
Murata
Murata
Murata
Murata
Multicomp
Welwyn
MTL
C14, C16, C17
C15
0.9 pF Chip Capacitors
1 pF Chip Capacitor
C18
0.8 pF Chip Capacitor
C19
470 F, 63 V Electrolytic Capacitor
2.2 , 1/4 W Chip Resistors
R1, R2
PCB
Rogers RO4350B, 0.020, = 3.66
D74096
r
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS — 1805–1880 MHz
37
36
35
34
33
19
18.8
18.6
18.4
18.2
18
V
= 28 Vdc, P = 56 W (Avg.), I = 1500 mA
out DQ
DD
Single--Carrier W--CDMA
G
ps
3.84 MHz Channel Bandwidth
D
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
–2.8
–3
–5
–31
–32
–33
17.8
17.6
17.4
17.2
17
–10
–15
–20
–25
–30
PARC
IRL
–3.2
–3.4
–3.6
–3.8
–34
–35
ACPR
–36
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 56 Watts Avg.
–10
V
= 28 Vdc, P = 95 W (PEP), I = 1500 mA
out DQ
DD
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
–20
–30
–40
–50
–60
IM3--U
IM3--L
IM5--U
IM5--L
IM7--U
IM7--L
1
10
100
200
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
19.4
19
0
–1
–2
–3
–4
–5
–6
70
–25
–1 dB = 29.38 W
V
= 28 Vdc, I = 1500 mA
DD DQ
f = 1840 MHz
ACPR
60
50
40
30
20
10
–30
–35
–40
–45
–50
–55
–2 dB = 42.22 W
18.6
18.2
17.8
17.4
17
–3 dB = 56.39 W
D
G
ps
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PARC
PAR = 9.9 dB @ 0.01% Probability on CCDF
20
40
60
80
100
120
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 1805–1880 MHz
60
50
40
30
20
10
0
22
20
18
16
14
12
10
0
V
= 28 Vdc, I = 1500 mA, Single--Carrier W--CDMA
DQ
DD
3.84 MHz Channel Bandwidth
–10
–20
–30
–40
–50
–60
G
D
ps
1880 MHz
1805 MHz
1840 MHz
1880 MHz
1840 MHz
1805 MHz
ACPR
1880 MHz
1840 MHz
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1805 MHz
1
10
100
200
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
20
16
12
8
5
0
Gain
–5
IRL
–10
–15
–20
–25
V
P
= 28 Vdc
= 0 dBm
= 1500 mA
DD
in
4
I
DQ
0
1200 1400 1600 1800 2000 2200 2400 2600 2800
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
6
Table 8. Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, I = 1466 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
53.4
53.2
52.7
Gain (dB)
(dBm)
(W)
(MHz)
1800
0.56 – j3.82
0.64 – j4.06
0.81 – j4.35
0.58 + j3.60
0.46 – j2.94
0.45 – j3.06
0.46 – j3.17
16.4
55.0
318
–11
–12
–11
1840
1880
0.68 + j3.74
0.80 + j3.92
16.3
16.3
55.0
54.9
318
312
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
54.6
55.0
53.5
Gain (dB)
(dBm)
(W)
(MHz)
1800
1840
1880
0.56 – j3.82
0.51 + j3.65
0.45 – j3.02
0.45 – j3.11
0.47 – j3.24
14.2
55.7
374
–14
–15
–14
0.64 – j4.06
0.81 – j4.35
0.60 + j3.81
0.72 + j4.01
14.2
14.1
55.7
55.6
372
363
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 9. Load Pull Performance — Maximum Efficiency Tuning
V
= 28 Vdc, I = 1466 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
68.9
67.8
66.2
Gain (dB)
(dBm)
(W)
(MHz)
1800
0.56 – j3.82
0.64 – j4.06
0.81 – j4.35
0.59 + j3.68
1.27 – j2.42
1.15 – j2.41
0.99 – j2.41
19.9
52.6
182
–18
–20
–21
1840
1880
0.69 + j3.83
0.80 + j4.08
19.9
20.0
52.4
52.2
175
166
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
69.1
67.2
65.8
Gain (dB)
(dBm)
(W)
(MHz)
1800
1840
1880
0.56 – j3.82
0.52 + j3.69
1.14 – j2.51
1.15 – j2.39
1.03 – j2.68
17.6
53.7
233
–23
–26
–23
0.64 – j4.06
0.81 – j4.35
0.62 + j3.88
0.73 + j4.10
17.9
17.4
53.0
53.6
200
229
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
–1.5
–2
–1.5
62
–2
51
51.5
E
E
–2.5
–2.5
66
64
52.5
52
53
–3
–3
P
P
62
53.5
54.5
54
60
58
52
56
54
–3.5
–3.5
0.5
1
1.5
2
0.5
1
1.5
2
0
0
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
–1.5
–1.5
–2
–24
–22
–2
20.5
–20
–18
20
E
E
–2.5
–2.5
19.5
19
–16
–3
–3
P
P
–14
18.5
17
17.5
–12
18
–10
0.5
16.5
–3.5
–3.5
0.5
1
1.5
2
1
1.5
2
0
0
REAL ()
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
Figure 11. P1dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
8
P3dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
–1.5
–2
–1.5
51.5
–2
52
52.5
E
E
–2.5
–2.5
66
64
53
54.5
55
53.5
–3
–3
P
P
62
55.5
54
60
58
52
56
54
–3.5
–3.5
0.5
1
1.5
2
0.5
1
1.5
2
0
0
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
–1.5
–1.5
–30
–20
–28
–26
–24
–2
–2
18.5
E
E
18
–22
–2.5
–2.5
17.5
17
–18
–3
–3
P
P
16.5
–16
15.5
16
14.5
15
–14
–3.5
–3.5
0.5
1
1.5
2
0.5
1
1.5
2
0
0
REAL ()
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
10
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
11
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
12
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2016
Initial Release of Data Sheet
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
13
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All
other product or service names are the property of their respective owners.
E 2016 Freescale Semiconductor, Inc.
Document Number: A2T18S260W12N
Rev. 0, 2/2016
相关型号：
©2020 ICPDF网 联系我们和版权申明