935268498518 [NXP]
IC PLL FREQUENCY SYNTHESIZER, 2500 MHz, PBCC24, 4 X 4 MM, 0.65 MM HEIGHT, PLASTIC, HBCC-24, PLL or Frequency Synthesis Circuit;型号: | 935268498518 |
厂家: | NXP |
描述: | IC PLL FREQUENCY SYNTHESIZER, 2500 MHz, PBCC24, 4 X 4 MM, 0.65 MM HEIGHT, PLASTIC, HBCC-24, PLL or Frequency Synthesis Circuit |
文件: | 总28页 (文件大小:278K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA8028
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
Product data
2002 Feb 22
Supersedes data of 2002 Jan 09
File under Integrated Circuits — IC17
Philips
Semiconductors
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
GENERAL DESCRIPTION
APPLICATIONS
The SA8028 BICMOS device integrates programmable dividers,
charge pumps and phase comparators to implement phase–locked
loops. The device is designed to operate from 3 NiCd cells, in
pocket phones, with low current and nominal 3 V supplies.
• 500 to 2500 MHz wireless equipment
• Cellular phones, all standards including:
CDMA
3G
GSM
TDMA
GAIT
: IS95-B,C WCDMA
: WCDMA / UMTS
: EDGE / GPRS
: IS136 and EDGE
: GSM and TDMA
The synthesizer operates at VCO input frequencies up to 2.5 GHz.
The synthesizer has fully programmable RF, IF, and reference
dividers. All divider ratios are supplied via a 3-wire serial
programming bus. The RF divider is a fractional-N divider with
programmable integer ratios from 33 to 509 and a fractional
• WLAN
nd
resolution of 22 programmable bits (23 bits internal). A 2 order
• Wireless PDAs
sigma-delta modulator is used to achieve fractional division.
• Satellite tuners and all other high frequency equipment
• Extreme fine frequency resolution applications
Separate power and ground pins are provided to the charge pumps
and digital circuits. V
must be equal to or greater than V
.
DDCP
DD
The ground pins should be externally connected to prevent large
currents from flowing across the die and thus causing damage.
The charge pump current (gain) is fully programmable, while I
is
SET
set by an external resistance at the R
pin (refer to section 1.5,
SET
RF and IF Charge Pumps). The phase/frequency detector charge
pump outputs allow for implementing a passive loop filter.
24 23 22 21 20
1
19
V
DDPre
GND
FEATURES
• Extremely low phase noise:
18
17
16
15
14
2
3
4
5
6
CLOCK
REFin+
REFin–
GND
Pre
L
(f)
= –101 dBc/Hz at 5 kHz offset at 800 MHz
RFin+
RFin–
TOP VIEW
• Low power
R
SET
• Programmable Normal & Integral charge pump outputs:
Maximum output = 10.4 mA
GND
V
DDCP
CP
7
13
• Digital fractional spurious compensation
• Hardware and software power-down
N/C
8
9
10 11 12
• I
< 0.1 µA (typ) at V = 3.0 V
DD
DDsleep
• Seperate supply for V and V
DD
DDCP
SR02176
• Programmable loop filter bandwidth
Figure 1. HBCC24 pin configuration.
ORDERING INFORMATION
PACKAGE
NAME
TYPE NUMBER
DESCRIPTION
Plastic, heatsink bottom chip carrier; 24 terminals; body 4 x 4 x 0.65 mm (CSP package)
VERSION
SA8028W
HBCC24
SOT564-1
2
2002 Feb 22
853-2277 27777
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
QUICK REFERENCE DATA
V
= V = V
= +3.0 V, T
= +25°C; unless otherwise specified.
DDCP
DD
DDpre
amb
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
V
, V
Digital supply voltage
V
V
= V
DDpre
2.7
–
3.6
3.6
–
V
DD
DDpre
DD
Charge pump supply voltage
Total supply current
≥ V , V
DDpre
2.7
–
–
V
DDCP
DDCP
DD
I
I
f
f
f
f
RF and IF. on
7.6
0.1
–
mA
DDtotal
Total supply current in power-down mode
VCO Input frequency range
Input frequency range
–
1
µA
DDsleep
RFin
500
100
5
2500
760
30
MHz
MHz
MHz
MHz
–
IFin
Crystal reference input frequency
Maximum phase comparator frequency
–
REFin
RF phase comparator;
max. limit is indicative
–
–
30
COMPMAX
T
amb
Operating ambient temperature
–40
–
+85
°C
3
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
V
V
V
DDCP
DD
DDpre
24
1
14
18
22–BIT SHIFT
REGISTER
CLOCK
DATA
2–BIT SHIFT
REGISTER
PUMP
CURRENT
SETTING
19
15
PUMP
BIAS
CONTROL
LATCH
R
SET
20
ADDRESS DECODER
LOAD SIGNALS
STROBE
SIGMA-DELTA
RF DIVIDER
LATCH
4
5
RFin+
RFin–
7
8
PHP
PHI
PHASE
DETECTOR
LATCH
17
16
REFin+
REFin–
REF DIVIDER
2
2 2 2
22
10
LOCK
DETECT
SA
LOCK
PHA
LATCH
PHASE
DETECTOR
11
23
IFin
IF DIVIDER
21
PON
TEST
2
3
6, 9
GND
GND
GND
CP
Pre
SR02379
Figure 2. HBCC24 Block Diagram
HBCC24 PIN DESCRIPTION
SYMBOL
PIN
DESCRIPTION
SYMBOL
PIN
DESCRIPTION
Not connected
N/C
13
14
15
V
DDpre
1
Prescaler supply voltage
V
DDCP
Charge pump supply voltage; analog
GND
GND
2
Ground; digital
R
External resistor from this pin to ground
sets the charge pump current
SET
3
Prescaler ground; analog
Input to RF divider (+)
Input to RF divider (–)
Charge pump ground; analog
RF normal charge pump output
RF integral charge pump output
Charge pump ground; analog
IF charge pump output
Input to IF divider
Pre
RFin+
RFin–
4
REFin–
REFin+
CLOCK
DATA
16
17
18
19
20
21
22
Input to reference (–)
5
Input to reference (+)
Programming bus clock input
Programming bus data input
Programming bus enable input
Power-down control input
Lock detect output
GND
PHP
PHI
6
CP
7
STROBE
PON
8
GND
PHA
IFin
9
CP
LOCK
10
11
12
TEST
23
Test (should be either grounded or
connected to V
)
DD
N/C
Not connected
V
DD
24
Supply; digital
4
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
LIMITING VALUES
In accordance with the Absolute Maximum Rating System
SYMBOL
PARAMETER
MIN.
–0.3
–0.3
–0.3
–0.3
MAX.
+3.6
+3.6
+3.6
+0.9
UNIT
V
V
V
Digital supply voltage
Charge pump supply voltage
Analog supply voltage
Difference in supply voltages
V
V
V
V
DD
DDCP
DDpre
∆V
DD
V
DDCP
– V
(V
DDCP
≥ V
, V
DD
)
DDpre
DDpre
V
All input pins
–0.3
–0.3
V
+ 0.3
V
V
n
DD
∆V
Difference in voltage between GND , GND and GND (these pins
+0.3
GND
pre
CP
should be connected together)
Storage temperature
T
–55
–40
+125
+85
°C
°C
°C
stg
T
amb
Operating ambient temperature
Maximum junction temperature
T
j
150
Handling
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal
precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
HBCC24: Thermal resistance from junction to ambient in still air
30
°C/W
th j–a
5
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
CHARACTERISTICS
V
= V = V
= +3.0 V, T
= +25°C; unless otherwise specified.
DDCP
DD
DDpre
amb
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
V
,
Digital supply voltage, prescaler supply voltage
V
V
= V
DDpre
2.7
–
3.6
V
DD
DD
DDpre
V
DDCP
Charge pump supply voltage
≥ V
V
2.7
–
–
3.6
–
V
DDCP
DD, DDpre
I
Synthesizer operational total supply current
f
= 20 MHz
7.6
mA
DDTotal
REF
(with RF on, IF on)
(with RF on, IF off)
logic levels 0 or VDD
–
–
6.4
0.1
–
1
mA
I
Total supply current in power-down mode
µA
DDsleep
RF divider input
f
RF VCO input frequency range
AC-coupled input signal level
500
–15
–
–
2500
0
MHz
dBm
RFin
V
R (external) = R = 50 Ω;
in s
RFin
single-ended drive;
max. limit is indicative
@ 500 to 2500 MHz
112
–
632
mV
pp
Z
Input impedance Re (Z)
f
f
= 2.4 GHz
= 2.4 GHz
–
300
1
–
Ω
RFin
RFin
C
N
Typical pin input capacitance
RF divider ratio ranges
–
–
pF
RFin
RFin
Limited test coverage
RF phase comparator
33
–
–
509
30
RF
F
Maximum phase comparator frequency
–
MHz
COMPmax
IF divider input
f
Input frequency range
100
–15
–
–
760
0
MHz
dBm
IFin
V
AC-coupled input signal level
f : 100 MHz to 500 MHz
IFin
IFin
R
(external) = R = 50 Ω;
S
in
112
–10
200
–
–
–
632
0
mV
pp
max. limit is indicative
f
: 500 MHz to 760 MHz
dBm
IFin
R
(external) = R = 50 Ω;
S
in
632
mV
pp
max. limit is indicative
Z
Input impedance Re (Z)
Typical pin input capacitance
IF division ratio
f
f
= 500 MHz
= 500 MHz
–
3.9
0.5
–
–
kΩ
Fin
RFin
C
N
–
–
pF
Fin
IF
RFin
128
16383
Reference divider input
f
Input frequency range from TCXO
AC-coupled input signal level
5
–
–
30
MHz
REFin
V
single-ended drive;
360
1300
mV
REFin
PP
max. limit is indicative
Z
Input impedance Re (Z)
Typical pin input capacitance
Reference division ratio
f
f
= 20 MHz
= 20 MHz
–
–
4
10
1
–
kΩ
REFin
REF
REF
C
R
–
pF
REFin
REF
SA = ”000”, IF loop
–
1023
Charge pump current setting resistor input
R
External resistor from pin to ground
Regulated voltage at pin
6
–
7.5
15
–
kΩ
SET
SET
V
R
= 7.5 kΩ
1.22
V
SET
Charge pump outputs; R
= 7.5 kΩ
SET
1
I
I
I
I
Charge pump current ratio to I
Current gain = I /I
–15
–10
–10
–10
0.6
–
–
–
–
–
+15
+10
+10
+10
%
%
%
nA
V
CP
SET
PH SET
= 1/2 V
DDCP
Sink-to-source current matching
Output current variation versus V
Charge pump off leakage current
V
PH
V
PH
V
PH
MATCH
ZOUT
LPH
2
in compliance range
= 1/2 V
PH
DDCP
V
Charge pump voltage compliance
V
DDCP
–0.7
PH
6
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
SYMBOL
PARAMETER
CONDITIONS
= 7.5 kΩ, CP = 00, non speed-up mode)
MIN.
TYP.
MAX.
UNIT
Phase noise (condition R
SET
Synthesizer’s contribution to close-in phase
noise of 900 MHz RF signal at 5 kHz offset.
f
f
= 13 MHz, TCXO,
–
–99
–
dBc/Hz
L(f)
REF
= 13 MHz
COMP
indicative, not tested
Synthesizer’s contribution to close-in phase
noise of 1800 MHz RF signal at 5 kHz offset.
As above
–
–
–93
–
–
dBc/Hz
dBc/Hz
Synthesizer’s contribution to close-in phase
noise of 800 MHz RF signal at 5 kHz offset.
f
= 19.44/19.68 MHz, TCXO,
–101
REF
f
= 19.44/19.68 MHz
COMP
indicative, not tested
Synthesizer’s contribution to close-in phase
noise of 2100 MHz RF signal at 5 kHz offset.
As above
–
–93
–
dBc/Hz
Interface logic input signal levels
V
V
HIGH level input voltage
LOW level input voltage
Input leakage current
0.7*V
–0.3
–0.5
–
–
–
V
+0.3
V
IH
IL
DD
DD
0.3*V
+0.5
V
DD
I
V
V
= 3 V, V = 3 V,
= 0 V
µA
LEAK
DD
IH
IL
Lock detect output signal (in push/pull mode) and Data output signal (in readout test mode)
V
V
LOW level output voltage
HIGH level output voltage
I
I
= 2 mA
–
–
–
0.4
–
V
V
OL
sink
source
= –2 mA
V
–0.4
OH
DD
NOTES:
VSET
I
SET
1.
=
bias current for charge pumps.
RSET
2. The relative output current variation is defined as:
∆IZOUT
( I
| I
I 1
I 1
)
–
+
2
2
=
2
×
;
IZOUT
|
With I @ V = 0.6 V, I @V = V
– 0.7 V (see Figure 3).
1
1
2
2
DDCP
CURRENT
I
I
ZOUT
2
I
1
VOLTAGE
V
1
V
2
V
PH
I
2
I
1
SR00602
Figure 3. Relative output current variation.
7
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
During each RF divider cycle, one divider output pulse is generated.
The positive edge of this pulse drives the phase comparator, the
negative edge drives the sigma-delta modulator which is of 2
order and has an effective resolution of 22 bits. Internally, the
modulator works with 23 fractional bits K<22:0>, but the LSB (bit K0)
is set to ‘1’ internally to avoid limit cycles (cycles of less than
maximum length). This leaves 22 bits (K<22:1>) available for
external programming.
1.0 FUNCTIONAL DESCRIPTION
Frequency synthesizers, such as Philips Semiconductors’ SA8028,
are a crucial part of Phase Locked Loops (PLL) for both voice and
data devices used in communications. Five components make up
the basic PLL (see Figure 4). A very stable, low frequency, signal
source (typically a temperature controlled crystal oscillator TCXO_)
is used as a reference to the system. A second signal source
(typically a VCO) is used to generate the desired output frequency.
A phase/frequency detector (PFD) is used to compare the
phase/frequency error between the two signals. A loop filter (LPF)
rejects undesired noise while also integrating the PFD output current
to drive the VCO with the necessary tuning voltage, and a divider in
the feedback path is used to down-convert the VCO output
nd
nd
Under these conditions (2 order modulator, 23 fractional bits,
23
K0 = ‘1’), all possible sigma-delta sequences are 2*2 divider
cycles long, which is the maximum length. The noise shaping
characteristic is +20 dB/dec for offset frequencies up to approx.
f
/5, which needs to be cancelled by a closed-loop transfer
COMP
frequency to the reference frequency for comparison. The SA8028
is a dual synthesizer that integrates programmable dividers,
programmable charge pumps and phase comparators to be
implemented as part of RF and IF PLLs. The RF synthesizer
operates at VCO input frequencies up to 2.5 GHz, while the IF
synthesizer operates at VCO input frequencies up to 760 MHz.
function of sufficient high order. The output of the sigma-delta
modulator is 2 bits, which are added to the integer RF division ratio
N, such that the momentary division ratios range from
(N–1) to (N+2) in steps of 1.
1.2 IF divider
The IFin input drives a pre-amplifier to provide the clock to the first
divider stage. The pre-amplifier has a high input impedance,
dominated by pin and pad capacitance. The divider consists of a
fully programmable bipolar prescaler followed by a CMOS counter.
The allowable divide ratios are from 128 to 16383 (C-word bits
<21:8>). Table 14 shows all the possible values that can be
programmed into the C-Word for the IF divider.
LPF
TCXO
VCO
PFD
Φ
INTEGRATOR
1
+ ∆N(τ)
1.3 Reference divider (see Figure 5)
N
DIVIDER
The IF phase detector’s reference input is an integer ratio of the
reference frequency. The reference divider chain consists of a
bipolar input buffer followed by a CMOS divider and a 3-bit binary
counter (SA register). The allowable divide ratios, R, are from 4 to
1023 (B-word bits <21:12>) when the 3-bit binary counter (C-word
bits <2:0>) is set to all zeros, SA = 000. The 3-bit SA register
determines which of the 5 divider outputs (refer to Table 12) is
selected as the IF phase detector input (see Figure 5). For the RF
synthesizer, the output of the reference input buffer is routed directly
(not reference divider) to the input of the RF phase detector.
SR02370
Figure 4. PLL block diagram.
1.1 RF Fractional-N divider
The RFin inputs drive a pre-amplifier to provide the clock to the first
divider stage. For single ended operation, the signal should be fed
(AC-coupled) to one of the inputs while the other one is AC grounded.
The pre-amplifier has a high input impedance, dominated by pin and
pad capacitance. The bipolar divider is fully programmable. For
allowable division ratios, see the “characteristics” table.
TO RF PHASE
DETECTOR
REFERENCE
INPUT BUFFER
REFERENCE
INPUT
DIVIDE BY R
/2
/2
/2
/2
SA=”100”
SA=”011”
SA=”010”
SA=”001”
SA=”000”
TO IF PHASE
DETECTOR
SR02294
Figure 5. Reference divider.
8
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
1.4 Phase detector (see Figure 6)
The reference signal and the RF (IF) divider output are connected to a phase frequency detector that controls the charge pumps. The dead
zone (caused by the finite time taken to switch the charge pump current sources on or off) is cancelled by forcing the pumps ON for a minimum
time (backlash time, τ) at every cycle providing improved linearity.
V
DDCP
P
P–TYPE
CHARGE PUMP
D
Q
“1”
* see note
f
CLK
REF
R
R
R
I
τ
PH
“1”
D
IF/RF
DIVIDER
CLK
N–TYPE
CHARGE PUMP
X
N
Q
GND
CP
f
REF
R
X
P
N
τ
τ
I
PH
SR02413
NOTES:
For the RF synthesizer, the output of the reference input buffer is routed directly (not divided) to the input of the RF phase detector. Whereas
for the IF synthesizer, the reference input to the IF phase detector is the output from the reference divider.
τ (backlash time) is the delay that fixes the minimum allowable charge pump activity time.
Figure 6. Phase detector structure with timing.
9
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
1.5 RF and IF Charge Pumps
The RF phase detector drives the charge pumps on the PHP and
PHI pins, while the IF phase detector drives the charge pump on the
PHA pin. Both the RF and IF charge pump current values are
determined by the current generated at the R
1.7 Lock Detect
The output LOCK maintains a logic ‘1’ when the IF phase detector
(AND/ORed) with the RF phase detector indicates a lock condition.
The lock condition for the RF and IF synthesizers is defined as a
phase difference of less than "1 period of the frequency at the input
1
pin . The current
SET
REF
REF . One counter can fulfill the lock condition when the
gain can be further programmed by the CP0, CP1 bits in the C-word,
as seen in Table 1.
in+,
in–
other counter is powered down. Out of lock (logic ‘0’) is indicated
when both counters are powered down.
Table 1. RF and IF charge pump currents
1.8 Power-down mode
2
3
CP1
CP0
I
I
I
I
PHI
With power applied to the chip, power-down mode can be entered
either by hardware (external signal on pin PON) or by software (by
programming the PD = Power Down bits (<B10, B9>) in the B-word).
The PON signal is exclusively ORed with the PD bits. If PON = 0,
then the part is powered up when PD = 1 (<B10, B9>). PON can be
used to invert the polarity of the software bits PD. Table 9 of section
2.4.2 illustrates how power-down mode can be implemented.
PHA
PHP
PHP–SU
0
0
1
1
0
1
0
1
1.5xl
0.5xl
1.5xl
0.5xl
3xI
1xl
3xl
1xl
15xl
36xl
12xl
0
SET
SET
SET
SET
SET
SET
SET
SET
SET
SET
5xl
SET
SET
15xl
5xl
SET
0
SET
NOTES
1. I
During power-down mode the 3-wire bus remains active and
programming-words may be pre-loaded before switching to
power-up mode. If the chip is programmed while in power-down
= V
/R
bias current for charge pumps.
SET
SET SET:
2. CP1 = 1 is used to disable the PHI pump.
3. I is the total current at pin PHP during speed up condition.
PHP–SU
mode, the RF divider ratio N is internally presented to the RF
RF
1.6 Charge Pumps Speed-up Mode
divider on the next falling edge of STROBE after STROBE has gone
high at the end of the A-word. Power-down mode does not reset the
sigma-delta modulator., i.e., power-down mode preserves the state
of the sigma-delta modulator (as long as power is applied to the
chip).
The RF charge pumps will enter speed-up mode when STROBE
goes high after A-word has been sent. They will exit speed-up mode
on the next falling edge of STROBE. There is no speed-up mode for
the IF charge pump.
The charge pump, by default, will automatically go into speed-up
To take advantage of the register pre-loading capability while the
device is in power-down mode, the B-word needs to be sent a
second time (i.e., again, after the A-word), with the PD (<B10, B9>)
bits now programmed for power-up.
mode (which can deliver up to 15*I
for PHP_SU, and 36*I
for
SET
SET
PHI), based on the strobe pulse width following the A-word to
reduce switching speed for large tuning voltage steps (i.e., large
frequency steps). Figure 7 shows the recommended passive loop
filter configuration. Note: This charge pump architecture eliminates
the need for added active switches and reduces external component
count. Furthermore, the programmable charge pump gains provide
some programmability to the loop filter bandwidth.
If power-up mode is to be controlled by hardware, the PON signal
must be toggled only after the A-word has been sent and STROBE
has gone high and then low.
When the synthesizer is reactivated after power-down mode, the IF
and reference dividers are synchronized to avoid random phase
errors on power-up. There is no power-up synchronization between
the RF divider and the reference clock. After power-up, there is a
delay of four edges (i.e. 1.5 cycles) of the output clock of the
reference divider before the RF phase detector is activated. That
means the reference divider must be powered up for the RF phase
detector to become active.
The duration of speed-up mode is determined by the strobe pulse
that follows the A-word. Recommended optimal strobe width is equal
to the total loop filter capacitance charge time from VCO control
voltage level 1 to VCO control voltage level 2. The strobe width must
not exceed this charge time. An external data processing unit
controls the width of the strobe pulse (e.g., × number of clock
cycles).
When initially applying or reapplying power to the chip, and internal
power-up reset pulse is generated which sets the programming-words
to their default values and also resets the sigma-delta modulator to
its “all-0” state. It is also recommended that the D-word be manually
reset to all zeros, following initial power-up, to avoid unknown states.
In addition, charge pumps will stay in speed-up mode continuously
while Tspu = 1 (in D-word <D15>). The speed-up mode can also be
disabled by programming T
= 1 (in D-word <D16>).
dis-spu
R2
VCO
PHP[PHP–SU]
R1
C2
C3
PHI
C1
SR02356
Figure 7. Typical passive 3-pole loop filter.
10
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
When loading several words in series, the minimum STROBE high
time between words must be observed (refer to Figure 8).
2.0 SERIAL PROGRAMMING BUS
A simple 3-line bidirectional serial bus is used to program the circuit.
The 3 lines are DATA, CLOCK and STROBE. When the STROBE = 0,
the clock driver is enabled and on the positive edges of the CLOCK
signal, DATA is clocked into temporary shift registers. When the
STROBE = 1, the clock is disabled and the data in the shift register
is latched into different working registers, depending on the address
bits. In order to fully program the circuit, 3 words must be sent in the
following order: C, B, and A. An additional word, the D-word, is for
test purposes only: all bits in this test word should be initialized to 0
for normal operation. The N value of the B-word is stored temporarily
until the A-word is loaded to avoid temporarily false N settings, while
the corresponding fractional ratio Kn is not yet active. When a new
fractional ratio is loaded through the A-word, the fractional sigma
delta modulator is not reset, i.e., it will start the new fractional
sequence from the last state of the previously executed sequence. A
typical programming sequence is illustrated in Figure 10.
Unlike the earlier SA80xx family members, SA8028 has the built-in
feature to output the contents of an addressable internal register.
For the current SA8028, only the momentary division ratio N (RF
divider) can be retrieved through the serial bus. The handshake
protocol requires a “request to read” to be sent prior to each “read”,
i.e., by sending a D-word with the TreadN-bit (<D11>) set to “high”.
Immediately after the transition of “STROBE” from low-to-high,
four (4) clock pulses are needed to prepare the data for output and
another nine (9) clock pulses are needed to accomplish the serial
reading with LSB first. A high-to-low transition of “STROBE” then
resets the serial bus to the input mode. The timing diagram is
presented in Figure 9. In general, a high-to-low transition of the
“STROBE” signal will instantaneously reset the serial bus to the
input mode, even when the chip is in the output mode.
Table 2. Serial bus timing requirements (see Figures 8 and 9)
V
DD
= V
=+3.0 V; T
= +25 °C unless otherwise specified. (Guaranteed by design.)
DDCP
amb
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Serial programming clock; CLK
t
t
Input rise time
Input fall time
Clock period
–
10
10
–
40
40
–
ns
ns
ns
r
–
f
T
100
cy
Enable programming; STROBE
t
t
t
t
t
Delay to rising clock edge
40
–
–
–
–
–
–
–
–
ns
ns
ns
ns
START, START;R
Minimum inactive pulse width
Enable set-up time to next clock edge
Reset data line to input mode
1/f
20
20
W
COMP
SU;E
RESET
Register serial input data; DATA (I)
t
t
Input data to clock set-up time
Input data to clock hold time
20
20
–
–
–
–
ns
ns
SU;DAT
HD;DAT
Register serial output data; DATA (O)
t
Input clock to data set-up time
20
–
–
ns
SU;DAT;R
t
f
t
r
t
t
T
HD;DAT
SU;E
CY
t
SU;DAT
CLK
LSB
MSB
ADDRESS
DATA
>=0
STROBE
t
W
t
START
SR02296
Figure 8. Serial bus “Write” timing diagram.
11
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
T
cy
t
r
t
f
t
t
RESET
SU:DAT;R
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
LSB
MSB
DATA
I
I
O
O
O
O
O
O
O
O
O
I
DEVICE I/O:
STROBE
t
START;R
SR02372
Figure 9. Serial bus “Read” timing diagram.
12
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
POWER–ON
PROGRAM D WORD
SET DEFAULT
–
PROGRAM C WORD
–
–
–
–
SELECT SA
SET CHARGE PUMP GAIN
SET IF DIVIDER
SELECT LOCK DETECT
PROGRAM B WORD
–
–
–
–
SET RF DIVIDER N
SET POWER-UP OPTION
SET REF DIVIDER
SET RESET-BITS
PROGRAM A WORD
–
SET FRACTIONAL VALUE K
READY TO OPERATE
CHANGE
FRACTIONAL
VALUE K
Y
PROGRAM A WORD
N
Y
CHANGE
RF DIVIDER N
N
CHANGE
IF
FREQUENCY
Y
Y
Y
PROGRAM C WORD
PROGRAM B WORD
PROGRAM B WORD
N
POWER
DOWN
N
POWER
UP
N
POWER
OFF
SR02380
Figure 10. Typical programming sequence
13
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
2.1 Data format
Each of the 4 word registers contains 24 programmable bits. Data is serially clocked in on the rising edge of each clock pulse with the
LSB first in, and MSB last in.
Table 3. Format of programmed data
LAST IN
MSB
SERIAL PROGRAMMING FORMAT
FIRST IN
LSB
p23
p22
p21
p20
.. / ..
.. / ..
p1
p0
2.2 Register addressing
Table 4. Register addressing
Bit
<23>
<22>
<21>
A-word address
B-word address
C-word address
D-word address
0
0
1
1
0
1
0
1
x
x
x
0
Notice that the register addresses are the MSB in each word; thus, the last to be clocked into the registers.
2.3 A-word register
Table 5. A-word, length 24 bits
Last IN
<21> <20> <19> <18> <17> <16> <15> <14> <13> <12> <11> <10> <9>
<8>
<7>
<6>
<5>
<4>
<3>
<2>
<1>
<0>
Address Fractional ratio Kn
0
0
K22 K21 K20 K19 K18 K17 K16 K15 K14 K13 K12 K11 K10 K9
K8
K7
K6
K5
K4
K3
K2
K1
Default :
A word address
Fractional ratio select
0
0
0
0
1
1
0
1
0
1
1
0
1
1
1
0
1
0
0
1
1
1
Fixed to 00.
Kn sets the fractional part of the total division ratio. To avoid limit cycles the K0 bit is internally set to “1”
2.3.1 The fractional multiplier <A21:A0>
The A-word register is dedicated for programming the RF loop, fractional multiplier (the sigma-delta modulator) which has an effective resolution
of 22 bits. The modulator works with 23 bits, Kn<22:0>. However, this K0 bit is set to ‘1’ internally to avoid limit cycles (cycles of less than
maximum length). This leaves 22 bits (Kn<22:1>) available for external programming. Refer to Table 6.
Calculating the desired VCO output frequency can be easily accomplished by using the following equation, Equation (1).
ǒ
2 Kn <22:1> ) 1Ǔ
f
VCO + fref N )
(1)
223
where f is the reference frequency at the REF input pin and N is the integer multiplier. K , once again, is the fractional multiplier.
ref
n
Example:
Determine the Kn value required for generating a VCO frequency of 2100 MHz with a reference frequency of 19.68 MHz.
ǒfVCO Ǔ
23
ƪ
ƫ
–N 2
f
ref
Kn<22:1> +
Kn<22:1> +
2
ƪǒ2100 MHz
Ǔ
23
ƫ
19.68 MHz –106 2
+ 2966702
2
14
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
Table 6. Kn values for the fractional divider
A21
A20
A19
A18
A17
A16
A15
A14
A13
A12
0
A11
0
A10
0
A9
0
0
0
0
–
0
–
1
1
A8
0
0
0
0
–
0
–
1
1
A7
0
0
0
0
–
1
–
1
1
A6
0
0
0
0
–
0
–
1
1
A5
0
0
0
0
–
1
–
1
1
A4
0
0
0
0
–
0
–
1
1
A3
0
0
0
0
–
1
–
1
1
A2
0
0
0
1
–
1
–
1
1
A1
0
1
1
0
–
1
–
1
1
A0
1
0
1
0
–
0
–
0
1
Kn
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
2
0
0
0
0
0
0
0
0
0
0
0
0
3
4
0
0
0
0
0
0
0
0
0
0
0
0
–
–
–
–
–
–
–
–
–
–
–
–
…
1
0
1
1
0
1
0
1
0
0
0
1
2966702
…
–
–
–
–
–
–
–
–
–
–
–
–
1
1
1
1
1
1
1
1
1
1
1
1
4194302
4194303
1
1
1
1
1
1
1
1
1
1
1
1
2.4 B-word register
Table 7. B-word, length 24 bits
Last IN
<21> <20> <19> <18> <17> <16> <15> <14> <13> <12>
<11>
<10>
<9>
<8> <7> <6> <5> <4> <3> <2> <1> <0>
Reset Power Down
bit
Address
Reference divider ratio Rn
RF Divider integer ratio N
0
1
R9
R8
R7
R6
R5
R4
R3
R2
R1
R0
PDref
IF
RF
N8 N7 N6 N5 N4 N3 N2 N1 N0
Default:
0
0
0
1
0
1
0
0
0
1
0
1
1
0
0
1
1
0
1
1
0
0
B-word address
R-Divider
Fixed to 01
R0..R9, Reference divider values, see section “characteristics” for allowed divider ratios.
1 → Pdref : powers down (=resets) the reference divider
See Truth Table 9
Reset bit
Power-down
N-Divider
Nn sets the integer part of the RF divider ratio, see section “characteristics” for allowed ratios.
2.4.1 The RF divider <B8:B0>
Programming the RF divider to obtain the desired VCO output frequency is done by programming the B-word followed by the A-word. The
integer divider bits N<8:0> are in the B-word, whereas the fractional divider bits Kn<22:1> are in the A-word. Allowable integer division ratios are
shown in Table 8. The N value, from Equation (2), is simply the whole number of times the reference frequency goes into the desired VCO
output frequency. Recall that the reference frequency for the RF loop is not reduced prior to the phase detector. In other words, the frequency at
the input of the REFin is the comparison frequency.
f
ǒ Ǔ
VCO
MODULO
f
ref
fVCO
N +
N +
*
(2)
fref
fref
900 MHz
ǒ
19.68 MHzǓ
MODULO
900 MHz
19.68 MHz
*
19.68 MHz
14.4
+ 45
19.68
N + 45.7317073170...–
15
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
Table 8. Allowable integer values (N) for the RF divider
<B8>
<B7>
<B6>
<B5>
<B4>
<B3>
0
<B2>
0
<B1>
0
<B0>
1
N
33
…
0
0
0
1
0
—
—
—
—
1
—
—
—
—
1
—
—
—
—
1
—
—
—
—
1
—
—
—
—
1
—
—
—
—
1
—
—
—
—
1
—
—
—
—
0
—
—
—
—
1
…
…
…
509
2.4.2 Power–down <B10:B9>
If the chip is programmed while in power-up mode, the loading of the A-word and of the N values in the B-word are synchronized to the RF
divider output pulse. The data takes effect internally on the second falling edge of the RF divider output pulse after STROBE has gone high at
the end of the A-word. STROBE does not need to be held high until that second falling edge of the RF divider output pulse has occurred.
If the chip is programmed while in power-down mode, this synchronization scheme is disabled. The fully static CMOS design uses virtually no
current when the bus is inactive. It can always capture new programmed data, even during power-down.
To take advantage of the program register pre-loading capability while the device is in power-down mode, the B-word needs to be sent a second
time (i.e. again, after the A-word), with the PD bits now programmed for power-up. If power-up mode is to be controlled by hardware, the PON
signal must be toggled only after the A-word has been sent and STROBE has gone high and then low.
When the synthesizer is reactivated after power-down mode, the IF and reference dividers are synchronized to avoid random phase errors on
power-up. There is no power-up synchronization between the RF divider and the reference clock. However, after power-up, there is a delay of
four edges (i.e. 1.5 cycles) of the output clock of the reference divider before the RF phase detector is activated. That means the reference
divider must be powered up for the RF phase detector to become active.
When initially applying or re-applying power to the chip, an internal power-up reset pulse is generated which sets the programming-words to
their default values and also resets the sigma-delta modulator to its “all-0” state. It is also recommended that the D-word be manually reset to all
zeros, following initial power-up, to avoid unknown states.
Table 9. Power-down Truth Table
PON
IF
RF
IF
RF
<B10>
<B9>
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
OFF
OFF
ON
OFF
ON
OFF
ON
ON
ON
ON
ON
OFF
ON
OFF
OFF
OFF
16
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
2.4.3 Programming the IF Reference Divider <B21:B12>
The IF phase detector’s reference input is an integer multiple of the frequency at the input of the REFin pin. The reference divider has 10
programmable bits, <B21:B12> for allowable divide ratios, R, from 4 to 1023 when the 3 bit binary SA counter (refer to section 2.5.1) is set to all
zeros. Table 10 lists the allowable R values.
Table 10. R Values for the IF Reference Divider
<B21>
<B20>
<B19>
<B18>
<B17>
<B16>
<B15>
<B14>
<B13>
<B12>
R
4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
1
5
0
0
0
0
0
0
0
1
1
0
6
—
1
—
1
—
1
—
1
—
1
—
1
—
1
—
1
—
1
—
0
…
1022
1023
1
1
1
1
1
1
1
1
1
1
2.5 C-word Register
Table 11. C-word, length 24 bits
<21>
<20>
<19> <18> <17> <16> <15> <14> <13> <12> <11> <10>
<9>
<8>
<7>
<6>
<5>
<4>
<3>
<2>
<1>
<0>
Last IN
Address
IF Divider An
CP
Lock detect
Reset
bit
SA
1
0
A13 A12 A11 A10 A9
A8
1
A7
1
A6
1
A5
0
A4
0
A3
1
A2
0
A1
1
A0 CP1 CP0
L1
0
L0
0
Tsigrst SA2 SA1 SA0
Default:
0
0
0
0
0
0
1
1
0
0
0
0
C-word address
A-Divider
Fixed to 10
A0..A13, IF divider values , see section “characteristics for allowed for divider ratios.
CP1, CP0: Charge pump current ratio, see table of charge pump currents.
Charge pump current
Ratio
Lock detect
Reset bit
See Table 13.
1 → Tsigrst : resets the sigma-delta modulator after each loading of an A-word.
( It is held in the reset state between the first and second falling edge of the RF divider output pulse
after STROBE has gone high at the end of the A-word. )
IF comparison select
SA Comparison divider select for IF phase detector
2.5.1 Programming the SA Counter <C2:C0>
The 3 bit SA register determines which of the 5 divider outputs (refer to table 11) is selected as the IF phase detector’s input (see Figure 5).
Table 12. IF phase comparator frequency
<C2> <C1> <C0> Divide Ratio IF Phase Comparator Frequency
1
0
0
0
0
0
0
1
1
0
0
1
0
1
0
R
f
/ R
ref
R * 2
R * 4
R * 8
R * 16
f
f
f
/ (R * 2)
/ (R * 4)
/ (R * 8)
/ (R * 16)
ref
ref
ref
1
f
ref
NOTES:
1. f is the input frequency at the REFin pin.
ref
2.5.2 Programming the Reset Bits <B11>, <C3>
The reset bits offer extra flexibility. The default value for bits <B11>, <C3> are all zeros. Bit <B11> disables the IF reference divider and allows
for extra savings of approximately 200 µA when set to ‘1’. However, this bit must initially be set to ‘0’ during any power-up sequence. The RF
phase detector is activated after a delay of four edges of the reference divider output clock. Bit <C3> resets the sigma-delta modulator after
each loading of an A-word. It is held in the reset state between the first and second falling edge of the RF divider output pulse after STROBE
has gone high at the end of the A-word.
17
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
2.5.3 Programming the Lock Detect <C4:C5>
Lock detection is available only for the RF and IF phase detector. A ‘0’ in bit <C4:C5> is used for TTL, while a ‘1’ in bit <C4:C5> is used for RTL.
Table 13. Lock detect select
L1
0
L0
0
Select
1
RF/IF (push/pull)
0
1
RF/IF (open drain)
RF (push/pull)
IF (push/pull)
1
0
1
1
NOTE:
1. Combined RF_IF lock detect signal present at the lock pin (push/pull).
2.5.4 Programming the Charge Pump Gain <C7:C6>
The RF phase detector drives the charge pumps on the PHP and PHI pins, while the IF phase detector drives the charge pump on the PHA pin.
The current generated at the R
pin determines both the RF and IF charge pump current values in conjunction with the current gain
SET
programmed by the CP0, CP1 bits in the C–word, as seen in Table 1. For more information on charge pump speed-up mode, refer to section
1.6.
2.5.5 Programming the IF Divider for the IF Loop <C21:C8>
The divider is a fully programmable counter. The allowable divide ratios, A, are from 128 to 16383, bits <C21:C8>. Table 14 shows all the
possible values that can be programmed into the C-word for the IF divider.
Table 14. Allowable Values (A) for the IF Divider
C21
0
C20
0
C19
0
C18
0
C17
0
C16
0
C15
1
C14
0
C13
0
C12
0
C11
0
C10
0
C9
0
C8
0
A
128
0
0
0
0
0
0
1
0
0
0
0
0
0
1
129
0
0
0
0
0
0
1
0
0
0
0
0
1
0
130
—
1
—
1
—
1
—
1
—
1
—
1
—
1
—
1
—
1
—
1
—
1
—
1
—
1
—
0
…
16382
16383
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2.6 D-word Register
The D-word is for test purposes only. All bits in this test word should be initialized to 0 for normal operation. When initially applying or
re-applying power to the chip, an internal power-up reset pulse if generated which sets the programming-words to their default values and which
resets the sigma-delta modulator to its “all-0” state. It is also recommended that the D-word be manually reset to all zeros, following initial
power-up, to avoid unknown states.
Table 15. D-word, length 24 bits
<21> <20> <19> <18> <17>
<16>
<15>
<14> <13> <12>
<11>
<10>
<9>
<8>
<7>
<6>
<5>
<4>
<3>
<2>
<1>
<0>
Last IN
Address
1
Synthesizer Test bits
1
0
–
–
–
–
Tdis-spu Tspu
–
–
–
TreadN
0
–
–
–
–
–
–
–
–
–
–
–
Default
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
D word address
Tdis-spu
Fixed to 110.
Speed-up mode disabled.
Speed-up mode always on. NOTE: All other test bits must be set to 0 for normal operation.
NOTE: All other test bits must be set to 0 for normal operation.
Tspu: Speed up
TreadN
Used to “request to read” bit settings from bits <B21:12>. For more information on reading out the N value,
refer to Section 2.0, Serial Programming Bus.
18
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
3.0 Typical Performance Characteristics
2500
2000
1500
1000
500
3000
Iset = 204 µA
2000
Iset = 163 µA
1000
–40C
+25C
+85C
Iset = 81 µA
Icp
(µA)
Icp
0
0
(µA)
–500
–1000
–1500
–2000
–2500
Iset = 81 µA
–1000
–2000
–3000
Iset = 163 µA
Iset = 204 µA
COMPLIANCE VOLTAGE (V)
COMPLIANCE VOLTAGE (V)
SR02389
SR02414
Figure 11. PHI_SU charge pump output vs. Iset
(CP = 01_12x, V = 3.0 V, Temp = 25 °C)
Figure 12. PHI_SU charge pump output vs. temperature
(CP = 01_12x, V = 3.0 V, Iset = 163 µA)
DD
DD
8000
6000
4000
8000
6000
Iset = 204 µA
Iset = 163 µA
Iset = 81 µA
4000
2000
–40C
2000
0
+25C
+85C
Icp
(µA)
0
Icp
(µA)
Iset = 81 µA
–2000
–2000
–4000
–6000
–8000
Iset = 163 µA
Iset = 204 µA
–4000
–6000
–8000
COMPLIANCE VOLTAGE (V)
COMPLIANCE VOLTAGE (V)
SR02390
SR02391
Figure 13. PHI_SU charge pump output vs. Iset
(CP = 00_36x, V = 3.0 V, Temp = 25 °C)
Figure 14. PHI_SU charge pump output vs. temperature
(CP = 00_36x, V = 3.0 V, Iset = 163 µA)
DD
DD
19
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
800
600
400
200
0
Iset = 204 µA
600
400
Iset = 163 µA
200
Iset = 81 µA
Icp
–40C
(µA)
0
–200
–400
–600
–800
Icp
(µA)
+25C
+85C
Iset = 81 µA
–200
Iset = 163 µA
–400
–600
Iset = 204 µA
COMPLIANCE VOLTAGE (V)
COMPLIANCE VOLTAGE (V)
SR02393
SR02392
Figure 15. PHP charge pump output vs. Iset
(CP = 10_3x, V = 3.0 V, Temp = 25 °C)
Figure 16. PHP charge pump output vs. temperature
(CP = 10_3x, V = 3.0 V, Iset = 163 µA)
DD
DD
250
200
150
100
50
Iset = 204 µA
200
150
100
50
Iset = 163 µA
Iset = 81 µA
–40C
Icp
(µA)
0
+25C
+85C
Icp
(µA)
0
–50
–100
–150
–200
–250
Iset = 81 µA
–50
–100
–150
–200
Iset = 163 µA
Iset = 204 µA
COMPLIANCE VOLTAGE (V)
COMPLIANCE VOLTAGE (V)
SR02394
SR02395
Figure 17. PHP charge pump output vs. Iset
(CP = 11_1x, V = 3.0 V, Temp = 25 °C)
Figure 18. PHP charge pump output vs. temperature
(CP = 11_1x, V = 3.0 V, Iset = 163 µA)
DD
DD
20
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
1000
800
600
400
200
1200
1000
Iset = 204 µA
800
600
400
200
Iset = 163 µA
Iset = 81 µA
–40C
+25C
+85C
Icp
(µA)
Icp
(µA)
0
0
–200
–400
–600
–800
–1000
–200
Iset = 81 µA
–400
–600
Iset = 163 µA
–800
–1000
–1200
Iset = 204 µA
COMPLIANCE VOLTAGE (V)
COMPLIANCE VOLTAGE (V)
SR02397
SR02396
Figure 19. PHP_SU charge pump output vs. Iset
(CP = 01_5x, V = 3.0 V, Temp = 25 °C)
Figure 20. PHP_SU charge pump output vs. temperature
(CP = 01_5x, V = 3.0 V, Iset = 163 µA)
DD
DD
3000
4000
3000
2000
1000
Iset = 204 µA
2000
1000
Iset = 163 µA
Iset = 81 µA
–40C
+25C
+85C
Icp
(µA)
Icp
(µA)
0
0
Iset = 81 µA
–1000
–2000
–3000
–4000
–1000
–2000
–3000
Iset = 163 µA
Iset = 204 µA
COMPLIANCE VOLTAGE (V)
COMPLIANCE VOLTAGE (V)
SR02398
SR02399
Figure 21. PHP_SU charge pump output vs. Iset
(CP = 00_15x, V = 3.0 V, Temp = 25 °C)
Figure 22. PHP_SU charge pump output vs. temperature
(CP = 00_15x, V = 3.0 V, Iset = 163 µA)
DD
DD
21
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
150
100
80
60
40
Iset = 204 µA
100
Iset = 163 µA
50
–40C
20
+25C
+85C
Iset = 81 µA
Icp
(µA)
Icp
(µA)
0
0
Iset = 81 µA
–20
–40
–50
–100
–150
Iset = 163 µA
–60
–80
Iset = 204 µA
–100
COMPLIANCE VOLTAGE (V)
COMPLIANCE VOLTAGE (V)
SR02401
SR02400
Figure 23. PHA charge pump output vs. Iset
Figure 24. PHA charge pump output vs. temperature
(CP = 11_0.5x, V = 3.0 V, Temp = 25 °C)
(CP = 11_0.5x, V = 3.0 V, Iset = 163 µA)
DD
DD
400
300
200
100
300
200
Iset = 204 µA
Iset = 163 µA
Iset = 81 µA
100
–40C
Icp
(µA)
+25C
+85C
0
Icp
(µA)
0
Iset = 81 µA
–100
–200
–300
–400
–100
Iset = 163 µA
–200
–300
Iset = 204 µA
COMPLIANCE VOLTAGE (V)
COMPLIANCE VOLTAGE (V)
SR02403
SR02402
Figure 25. PHA charge pump output vs. Iset
(CP = 10_1.5x, V = 3.0 V, Temp = 25 °C)
Figure 26. PHA charge pump output vs. temperature
(CP = 10_1.5x, V = 3.0 V, Iset = 163 µA)
DD
DD
22
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
0
–3
0
–40C
25C
85C
2.7V
3.0V
3.6V
–3
–6
–6
–9
–9
–12
–15
–18
–21
–24
–27
–30
–33
–12
–15
–18
–21
–24
–27
–30
–33
–36
–39
–42
–45
–48
–36
–39
–42
–45
–48
SR02405
INPUT FREQUENCY (MHz)
SR02404
INPUT FREQUENCY (MHz)
Figure 27. RF (main) divider input sensitivity vs. frequency
and supply voltage (Temp = 25 °C, Iset = 164 µA, N = 509)
Figure 28. RF (main) divider input sensitivity vs. frequency
and temperature (V = 3.0 V, Iset = 164 µA, N = 509)
CC
0
2.7V
0
–3
–40C
25C
–3
–6
–9
3.0V
–6
–9
–12
–15
–18
–21
–24
–27
–30
–33
–36
–39
–42
–45
–48
3.6V
–12
–15
–18
–21
–24
–27
–30
–33
–36
–39
–42
–45
–48
85C
SR02407
SR02406
INPUT FREQUENCY (MHz)
INPUT FREQUENCY (MHz)
Figure 29. RF (main) fractional divider input sensitivity vs.
frequency and supply voltage (Temp = 25 °C, Iset = 164 µA,
N = 509.5)
Figure 30. RF (main) fractional divider input sensitivity
vs. frequency and temperature (V = 3.0 V, Iset = 164 µA,
CC
N = 509.5)
0
0
–40C
2.7V
3.0V
3.6V
–3
–6
–3
–6
25C
85C
–9
–9
–12
–15
–18
–21
–24
–27
–30
–33
–36
–39
–42
–45
–12
–15
–18
–21
–24
–27
–30
–33
–36
–39
–42
–45
INPUT FREQUENCY (MHz)
SR02408
INPUT FREQUENCY (MHz)
SR02409
Figure 31. IF (aux) divider input sensitivity vs. frequency and
supply voltage (Temp = 25 °C, Iset = 164 µA,
divider ratio = 16383)
Figure 32. IF (aux) divider input sensitivity vs. frequency and
temperature (V = 3.0 V, Iset = 164 µA, divider ratio = 16383)
CC
23
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
0
0
–40C
25C
2.7V
3.0V
3.6V
–2
–2
–4
–4
–6
–6
–8
–8
–10
–12
–14
–16
–18
–20
–22
–24
–26
–28
–30
–32
–34
–36
–38
–40
–10
–12
85C
–14
–16
–18
–20
–22
–24
–26
–28
–30
–32
–34
–36
–38
–40
INPUT FREQUENCY (MHz)
SR02411
INPUT FREQUENCY (MHz)
SR02410
Figure 33. Reference divider input sensitivity vs. frequency
and supply voltage (Temp = 25 °C, Iset = 164 µA,
divider ratio = 1023)
Figure 34. Reference divider input sensitivity vs. frequency
and temperature (V = 3.0 V, Iset = 164 µA, divider ratio = 1023)
CC
9.00
8.50
8.00
7.50
–40C
7.00
25C
85C
6.50
6.00
2.6
2.8
3
3.2
3.4
3.6
3.8
SUPPLY VOLTAGE (V)
SR02412
Figure 35. Total supply current vs. temperature
(Iset = 163 µA Fcomp = 20 MHz)
24
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
4.0 Application Schematic
25
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
HBCC24: plastic, heatsink bottom chip carrier; 24 terminals; body 4 x 4 x 0.65 mm
SOT564-1
26
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
NOTES
27
2002 Feb 22
Philips Semiconductors
Product data
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
SA8028
Data sheet status
Product
status
Definitions
[1]
Data sheet status
[2]
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Koninklijke Philips Electronics N.V. 2002
Contact information
All rights reserved. Printed in U.S.A.
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
Date of release: 02-02
9397 750 09499
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Document order number:
Philips
Semiconductors
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