935263377025 [NXP]
IC SPECIALTY TELECOM CIRCUIT, UUC8, 0.96 X 1.21 MM, DIE-8, Telecom IC:Other;
| 型号： | 935263377025 |
| 厂家： | 
NXP |
| 描述： | IC SPECIALTY TELECOM CIRCUIT, UUC8, 0.96 X 1.21 MM, DIE-8, Telecom IC:Other |
| 文件： | 总18页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TZA3033
SDH/SONET STM1/OC3
transimpedance amplifier
1998 Jul 08
Objective specification
File under Integrated Circuits, IC19
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
FEATURES
APPLICATIONS
• Low equivalent input noise, typically 1 pA/√Hz
• Wide dynamic range, typically 0.25 µA to 1.6 mA
• Differential transimpedance of 117 kΩ
• Bandwidth minimum 150 MHz
• Digital fibre optic receiver in short, medium and long
haul optical telecommunications transmission systems
or in high speed data networks
• Wideband RF gain block.
• Differential outputs
GENERAL DESCRIPTION
• On-chip AGC (Automatic Gain Control)
• No external components required
• Single supply voltage from 3.0 to 5.5 V
• Bias voltage for PIN diode
The TZA3033 is a low-noise transimpedance amplifier with
AGC designed to be used in STM1/OC3 fibre optic links.
It amplifies the current generated by a photo detector
(PIN diode or avalanche photodiode) and converts it to a
differential output voltage.
• Pin compatible with SA5223.
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TZA3033T
TZA3033U
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
naked die
die in waffle pack carriers; die dimensions 0.960 × 1.210 mm
−
BLOCK DIAGRAM
(1)
AGC
V
CC
(15)
8 (13, 14)
V
CC
1 nF
DREF
2 kΩ
GAIN
CONTROL
1 (1)
peak detector
A2
65 pF
IPhoto 3 (5)
(12) 7 OUTQ
A1
(11) 6 OUT
low noise
amplifier
single-ended to
differential converter
TZA3033
BIASING
3
2, 4, 5 (3, 4, 7, 8, 9, 10)
MGR368
GND
(1) AGC analog I/O is only available on the TZA3033U (pad 15).
The numbers in brackets refer to the pad numbers of the naked die version.
Fig.1 Block diagram.
1998 Jul 08
2
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
PINNING
SYMBOL
PIN
TYPE
DESCRIPTION
DREF
GND
1
2
3
analog output bias voltage for PIN diode (VCC); cathode should be connected to this pin
ground
ground
IPhoto
analog input
current input; anode of PIN diode should be connected to this pin; DC bias
voltage is 1048 mV
GND
GND
OUT
OUTQ
VCC
4
5
6
7
8
ground
ground
ground
ground
data output
data output
supply
data output; OUT goes HIGH when current flows into IPhoto (pin 3)
compliment of OUT (pin 6)
supply voltage
handbook, halfpage
V
DREF
GND
1
2
3
4
8
7
6
5
CC
OUTQ
OUT
TZA3033T
IPhoto
GND
GND
MGR369
Fig.2 Pin configuration.
1998 Jul 08
3
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
PAD CONFIGURATION
Bonding pad locations
1
8
DREF
V
CC
GND
2
7
OUTQ
15 14 13
1
TESTA
TESTB
2
3
12
11
TZA3033U
4
5
6
10
9
7
8
OUT
IPhoto
3
6
GND
GND
4
5
MGR371
Pad 15 (AGC) is not bonded.
Fig.3 Bonding diagram TZA3033U.
1998 Jul 08
4
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
Pad centre locations
FUNCTIONAL DESCRIPTION
COORDINATES(1)
The TZA3033 is a transimpedance amplifier intended for
use in fibre optic links for signal recovery in STM1/OC3
applications. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and
transforms it into a differential output voltage. The most
important characteristics of the TZA3033 are high receiver
sensitivity and wide dynamic range.
SYMBOL
PAD
x
y
DREF
TESTA
GND
GND
IPhoto
TESTB
GND
GND
GND
GND
OUT
1
2
95
95
881
735
618
473
285
147
95
3
95
4
95
High receiver sensitivity is achieved by minimizing noise in
the transimpedance amplifier.
5
95
6
95
The signal current generated by a PIN diode can vary
between 0.25 µA to 1.6 mA (peak-to-peak value).
An AGC loop (see Fig.1) is implemented to make it
possible to handle such a wide dynamic range.
The AGC loop increases the dynamic range of the
receiver by reducing the feedback resistance of the
preamplifier. The AGC loop hold capacitor is integrated
on-chip, so an external capacitor is not needed for AGC.
7
215
360
549
691
785
785
567
424
259
8
95
9
95
10
11
12
13
14
15
95
501
641
1055
1055
1055
OUTQ
VCC
The AGC voltage can be monitored at pad 15 on the naked
die (TZA3033U). Pad 15 is not bonded in the packaged
device (TZA3033T). This pad can be left unconnected
during normal operation. It can also be used to force an
external AGC voltage. If pad 15 (AGC) is connected to
VCC, the internal AGC loop is disabled and the receiver
gain is at a maximum. The maximum input current is then
about 10 µA.
VCC
AGC
Note
1. All coordinates (µm) are measured with respect to the
bottom left-hand corner of the die.
A differential amplifier converts the output of the
preamplifier to a differential voltage. The data output circuit
is given in Fig.4.
The logic level symbol definitions are shown in Fig.5.
1998 Jul 08
5
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
V
CC
800 Ω
800 Ω
30 Ω
30 Ω
OUTQ
OUT
4.5 mA
2 mA
4.5 mA
MGR290
Fig.4 Data output circuit.
V
V
CC
V
O(max)
V
OQH
V
OH
o(p-p)
V
OQL
V
OO
V
OL
V
O(min)
MGR243
Fig.5 Logic level symbol definitions for data outputs OUT and OUTQ.
6
1998 Jul 08
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCC
PARAMETER
MIN.
−0.5
MAX.
+5.5
UNIT
supply voltage
DC voltage
V
Vn
pin 3/pad 5: IPhoto
−0.5
−0.5
−0.5
−0.5
+2
V
V
V
V
pins 6 and 7/pads 11 and 12: OUT and OUTQ
pad 15: AGC (TZA3033U only)
pin 1/pad 1: DREF
VCC + 0.5
VCC + 0.5
V
CC + 0.5
In
DC current
pin 3/pad 5: IPhoto
−1
+2.5
+15
+0.2
+2.5
300
mA
mA
mA
mA
mW
°C
pins 6 and 7/pads 11 and 12: OUT and OUTQ
pad 15: AGC (TZA3033U only)
pin 1/pad 1: DREF
−15
−0.2
−2.5
−
Ptot
Tstg
Tj
total power dissipation
storage temperature
−65
−
+150
150
junction temperature
°C
Tamb
ambient temperature
−40
+85
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
tbf
UNIT
K/W
K/W
Rth(j-s)
Rth(j-a)
thermal resistance from junction to solder point
thermal resistance from junction to ambient
tbf
CHARACTERISTICS
For typical values Tamb = 25 °C and VCC = 5 V; minimum and maximum values are valid over the entire ambient
temperature range and process spread.
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
ICC
3
5
5.5
−
V
supply current
AC coupled; RL = 50 Ω
−
37
185
116
−
mA
mW
mW
°C
Ptot
total power dissipation
VCC = 5 V
−
−
V
CC = 3.3 V
−
−
Tj
junction temperature
ambient temperature
−40
−40
+120
+85
Tamb
Rtr
+25
°C
small-signal
transresistance of the
receiver
measured differentially;
AC coupled
RL = ∞
−
234
117
150
−
−
−
kΩ
RL = 50 Ω
Ci = 0.7 pF
−
kΩ
f−3dB(h)
high frequency
120
MHz
−3 dB point
1998 Jul 08
7
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
In(tot)
total integrated RMS
noise current over
bandwidth
referred to input; note 1
∆f = 90 MHz
−
−
−
−
16
tbf
tbf
1
−
−
−
−
nA
∆f = 120 MHz
nA
∆f = 150MHz
nA
∆Rtr/∆t
AGC loop constant
dB/ms
PSRR
power supply rejection
ratio
measured differentially;
note 2
f = 100 kHz to 10 MHz
f = 100 MHz
−
−
0.5
10
−
−
µA/V
µA/V
Input: IPhoto
Ii(IPhoto)(p-p) input current on
VCC = 5 V
−500
−500
+1
+1
+1800
+1600
µA
µA
pin IPhoto (peak-to-peak
value)
VCC = 3.3 V
Vbias(IPhoto) input bias voltage on
pin IPhoto
−
1048
−
mV
Data outputs: OUT and OUTQ
VO(CM)
common mode output
voltage
AC coupled; RL = 50 Ω
AC coupled; RL = 50 Ω
V
CC − 1.800 VCC − 1.700 VCC − 1.600 V
Vo(se)(p-p)
single-ended output
voltage (peak-to-peak
value)
−
150
260
mV
mV
VOO
differential output offset
voltage
−100
−
+100
Ro
tr
output resistance
rise time
single-ended; DC tested
20% to 80%
42
−
50
tbf
tbf
58
−
Ω
ps
ps
tf
fall time
80% to 20%
−
−
Notes
1. All In(tot) measurements were made with an input capacitance of Ci = 1 pF. This was comprised of 0.5 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package.
2. PSRR is defined as the ratio of the equivalent current change at the input (∆IIPhoto) to a change in supply voltage:
∆IIPhoto
PSRR =
--------------------
∆VCC
For example, a disturbance of +4 mV disturbance on VCC at 10 MHz will typically add an extra 2 nA to the photodiode
current. The external capacitor between DREF and GND has a large impact on PSRR. The specification is valid with
an external capacitor of 1 nF.
1998 Jul 08
8
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
APPLICATION INFORMATION
10 µH
V
P
22 nF
680 nF
V
CC
8
DREF
IPhoto
1
3
Z
Z
= 50 Ω
= 50 Ω
o
o
100 nF
100 nF
OUTQ
OUT
7
TZA3033T
6
R3
50 Ω
R4
50 Ω
1 nF
2
4
5
GND
GND
GND
MGR370
Fig.6 Application diagram.
1998 Jul 08
9
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
1998 Jul 08
10
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
SOLDERING
Introduction
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
1998 Jul 08
11
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jul 08
12
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
NOTES
1998 Jul 08
13
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
NOTES
1998 Jul 08
14
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
NOTES
1998 Jul 08
15
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© Philips Electronics N.V. 1998
SCA60
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Date of release: 1998 Jul 08
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TZA3033; SDH/SONET STM1/OC3 transimpedance amplifier
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Description
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The TZA3033 is a low-noise transimpedance amplifier with AGC designed to be used in STM1/OC3 fibre optic links. It amplifies the current
generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage.
PC/PC-peripherals
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Features
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Application notes
Selection guides
Other technical documentation
End of Life information
Datahandbook system
l Low equivalent input noise, typically 1 pA/W
l Bandwidth minimum 150 MHz
l Differential outputs
l On-chip AGC (Automatic Gain Control)
l No external components required
l Single supply voltage from 3.0 to 5.5 V
l Bias voltage for PIN diode
Relevant Links
l Pin compatible with SA5223.
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Applications
TZA3033
TZA3033
l Digital fibre optic receiver in short, medium and long haul optical telecommunications transmission systems or in high speed data
networks
l Wideband RF gain block.
Datasheet
File
size
(kB)
Publication
release date Datasheet status
Page
count
Type nr. Title
Datasheet
Download
TZA3033 SDH/SONET STM1/OC3
transimpedance amplifier
08-Jul-98
Objective
Specification
16
88
Products, packages, availability and ordering
North American
Partnumber
Order code
(12nc)
Partnumber
marking/packing
package device status
buy online
-
TZA3033T/C2
TZA3033T/C3
9352 626 64112 Standard Marking * Tube
9352 629 27112 Standard Marking * Tube
SOT96 Samples available
SOT96 Samples available
TZA3033TD
Standard Marking * Reel Pack,
TZA3033TD-T
9352 629 27118
SMD, 13"
SOT96 Samples available
NONE Samples available
NONE Samples available
No Marking * Die In Waffle
TZA3033U/C3
9352 629 28026
Carriers
-
-
No Marking * Chips on Wafer, Un-
9352 633 77025
TZA3033U/T/C3
Sawn, Electrical Tested
Please read information about some discontinued variants of this product.
Find similar products:
TZA3033 links to the similar products page containing an overview of products that are similar in function or related to the part
number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and
products from the same functional category.
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Royal Philips Electronics
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