934056863115 [NXP]
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6, BIP General Purpose Small Signal;![934056863115](http://pdffile.icpdf.com/pdf2/p00249/img/icpdf/934056863115_1510338_icpdf.jpg)
型号: | 934056863115 |
厂家: | ![]() |
描述: | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总8页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PEMH7
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
Preliminary specification
2001 Oct 22
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMH7
FEATURES
QUICK REFERENCE DATA
SYMBOL
• 300 mW total power dissipation
PARAMETER
MAX. UNIT
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
VCEO
ICM
collector-emitter voltage
50
100
−
V
peak collector current
mA
−
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
TR1
TR2
R1
NPN
NPN
−
−
• Reduces required PCB area
• Reduced pick and place costs.
bias resistor
open
4.7
−
kΩ
−
R2
PINNING
PIN
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
TR1; TR2
1, 4
2, 5
6, 3
emitter
base
TR1; TR2
TR1; TR2
collector
DESCRIPTION
NPN resistor-equipped transistors in a SOT666 plastic
package.
6
5
4
handbook, halfpage
6
5
4
R1
MARKING
TR2
TR1
1
TYPE NUMBER
PEMH7
MARKING CODE
R1
H3
1
2
3
2
3
Top view
MAM453
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
6, 3
1, 4
MBK120
Fig.2 Equivalent inverter symbol.
2001 Oct 22
2
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMH7
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
VCEO
VEBO
IO
collector-base voltage
open emitter
−
−
−
−
−
−
50
V
V
V
collector-emitter voltage
emitter-base voltage
output current (DC)
open base
50
open collector
5
100
100
200
+150
150
+150
mA
mA
mW
°C
ICM
peak collector current
total power dissipation
storage temperature
Ptot
Tamb ≤ 25 °C; note 1
Tstg
Tj
−65
−
junction temperature
operating ambient temperature
°C
Tamb
−65
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
notes 1 and 2
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
416
K/W
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Oct 22
3
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMH7
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor
ICBO
ICEO
collector-base cut-off current
collector-emitter cut-off current
VCB = 50 V; IE = 0
VCE = 50 V; IB = 0
CE = 30 V; IB = 0; Tj = 150 °C
−
−
100
1
nA
µA
µA
nA
−
−
V
−
−
50
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 5 V; IC = 0
−
−
100
−
VCE = 5 V; IC = 1 mA
200
−
330
−
VCEsat
R1
collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA
input resistor
100
6.1
2.5
mV
kΩ
pF
3.3
−
4.7
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
MHC075
MHC074
3
3
10
10
handbook, halfpage
handbook, halfpage
V
CEsat
h
(mV)
FE
(1)
(2)
2
10
(3)
(1)
(2)
(3)
2
10
10
10
−1
2
−1
2
1
10
10
10
1
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Oct 22
4
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMH7
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
01-01-04
01-08-27
SOT666
2001 Oct 22
5
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMH7
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Oct 22
6
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMH7
NOTES
2001 Oct 22
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2001 Oct 22
Document order number: 9397 750 08629
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