933699360135 [NXP]
DIODE 0.25 A, 250 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode;型号: | 933699360135 |
厂家: | NXP |
描述: | DIODE 0.25 A, 250 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode |
文件: | 总8页 (文件大小:34K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAV100 to BAV103
General purpose diodes
1996 Sep 17
Product specification
Supersedes data of April 1996
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
FEATURES
DESCRIPTION
• Small hermetically sealed glass
SMD package
The BAV100 to BAV103 are switching diodes fabricated in planar technology,
and encapsulated in small hermetically sealed glass SOD80C SMD packages.
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 50 V, 100 V, 150 V and 200 V
respectively
k
a
handbook, 4 columns
• Repetitive peak reverse voltage:
max. 60 V, 120 V, 200 V and 250 V
respectively
MAM061
• Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• Switching in industrial equipment
e.g. oscilloscopes, digital
Cathode indicated by green band.
voltmeters and video output stages
in colour television.
Fig.1 Simplified outline (SOD80C) and symbol.
1996 Sep 17
2
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BAV100
−
−
−
−
60
120
200
250
V
V
V
V
BAV101
BAV102
BAV103
VR
continuous reverse voltage
BAV100
−
−
−
−
−
−
50
100
150
200
250
625
V
V
V
V
BAV101
BAV102
BAV103
IF
continuous forward current
repetitive peak forward current
see Fig.2; note 1
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t = 1 s
−
−
9
3
A
A
−
1
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
400
+175
175
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 17
3
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3
IF = 100 mA
−
−
1.0
V
V
IF = 200 mA
1.25
IR
reverse current
BAV100
see Fig.5
VR = 50 V
−
−
−
−
−
−
−
−
−
−
100
100
100
100
100
100
100
100
5
nA
µA
nA
µA
nA
µA
nA
µA
pF
ns
VR = 50 V; Tj = 150 °C
VR = 100 V
BAV101
BAV102
BAV103
VR = 100 V; Tj = 150 °C
VR = 150 V
VR = 150 V; Tj = 150 °C
VR = 200 V
VR = 200 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω;
50
measured at IR = 3 mA; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
UNIT
300
375
K/W
K/W
Rth j-a
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 17
4
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
GRAPHICAL DATA
MBG459
MBH278
600
300
handbook, halfpage
handbook, halfpage
I
F
I
F
(mA)
(mA)
400
200
(1)
(2)
(3)
200
100
0
0
0
1
2
o
V
(V)
0
100
200
T
( C)
F
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
5
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
MGD009
MGD005
3
10
1.6
handbook, halfpage
handbook, halfpage
I
R
C
d
(µA)
(pF)
1.4
2
10
10
1
1.2
1.0
−1
10
−2
10
0.8
0
0
100
200
o
10
20
T ( C)
j
V
(V)
R
VR = VRmax
.
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
MBG700
300
handbook, halfpage
V
R
(V)
(1)
200
(2)
(3)
100
(4)
0
o
0
100
200
T
( C)
amb
(1) BAV103.
(2) BAV102.
(3) BAV101.
(4) BAV100.
Fig.7 Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
1996 Sep 17
6
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.8 Reverse recovery voltage test circuit and waveforms.
1996 Sep 17
7
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
PACKAGE OUTLINE
1.60
1.45
O
0.3
0.3
3.7
3.3
MBA390 - 2
Dimensions in mm.
Fig.9 SOD80C.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 17
8
相关型号:
933699370115
2.4V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699370135
2.4V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699380115
2.7V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699380135
2.7V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699390115
3V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699390135
3V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699400115
3.3V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699400135
3.3V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699410115
3.6V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699420115
3.9V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699430115
4.3V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
933699430135
4.3V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN
NXP
©2020 ICPDF网 联系我们和版权申明