933247120133
更新时间：2024-09-18 18:48:23
品牌：NXP
描述：DIODE 22 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, Voltage Regulator Diode
概述
规格参数
数据手册933247120133 概述
DIODE 22 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, Voltage Regulator Diode 齐纳二极管
933247120133 规格参数
| 生命周期： | Obsolete | 包装说明： | O-LALF-W2 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.50 | 风险等级： | 5.35 |
| 外壳连接： | ISOLATED | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | ZENER DIODE |
| JEDEC-95代码： | DO-35 | JESD-30 代码： | O-LALF-W2 |
| 元件数量： | 1 | 端子数量： | 2 |
| 最高工作温度： | 200 °C | 封装主体材料： | GLASS |
| 封装形状： | ROUND | 封装形式： | LONG FORM |
| 极性： | UNIDIRECTIONAL | 最大功率耗散： | 0.4 W |
| 认证状态： | Not Qualified | 标称参考电压： | 22 V |
| 最大反向电流： | 0.1 µA | 表面贴装： | NO |
| 技术： | ZENER | 端子形式： | WIRE |
| 端子位置： | AXIAL | 电压温度Coeff-Max： | 18.7 mV/°C |
| 最大电压容差： | 5% | 工作测试电流： | 5 mA |
| Base Number Matches： | 1 |
933247120133 数据手册
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PDF下载DISCRETE SEMICONDUCTORS
DATA SHEET
BZX55 series
Voltage regulator diodes
1996 Apr 26
Product specification
Supersedes data of April 1992
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX55 series
FEATURES
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
• Total power dissipation:
max. 500 mW
SOD27 (DO-35) packages.
• Tolerance series: ±5%
The diodes are available in the normalized E24 ±5% tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 to 75 V
(BZX55-C2V4 to BZX55-C75).
• Working voltage range:
nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
handbook, halfpage
k
a
• Low voltage stabilizers or voltage
MAM239
references.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
mA
IF
continuous forward current
−
250
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 50 °C; note 1
−
400
500
40
mW
mW
W
Tamb = 50 °C; note 2
−
−
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
tp = 8.3 ms; square wave;
−
30
W
Tj ≤ 150 °C prior to surge
Tstg
Tj
storage temperature
junction temperature
−65
+200
200
°C
°C
−
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature ≤ 50 °C; lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
IF = 100 mA; see Fig.4
−
1.0
V
1996 Apr 26
2
Per type
Tj = 25 °C; unless otherwise specified.
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL TEMP. COEFF.
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
at VR = 0 V
DIODE CAP.
Cd (pF)
REVERSE CURRENT at
REVERSE VOLTAGE
IR (µA)
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
RESISTANCE
SZ (mV/K)
at IZtest
rdif (Ω)
BZX55-
CXXX
at IZtest
see Figs 5 and 6
at
IZ
at
IZtest
at
at
VR
Tj = 25 °C Tj = 150 °C
(V)
MIN. MAX. MAX.
MAX.
85
85
85
85
85
85
80
70
50
30
10
8
TYP.
−1.8
−1.9
−2.1
−2.2
−2.4
−2.4
−2.4
−1.4
−0.8
1.6
MAX.
MAX.
50
MAX.
100
50
40
40
40
40
20
10
2
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
2.28
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
600
600
600
600
600
600
600
600
550
450
200
150
50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
1.0
1.0
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
10
4
1.0
2
1.0
2
1.0
2
1.0
1
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.0
1.0
2
1.0
2.2
2
2.0
3.0
2
3.0
7
3.8
2
5.0
50
7
4.5
2
6.15
6.8
50
10
15
20
20
26
30
40
50
55
5.5
2
10.6
70
6.5
2
7.5
10.4
11.6
12.7
14.1
15.6
17.1
19.1
21.2
70
7.7
85
2
8.25
9.0
11
11.4
12.4
13.8
15.3
16.8
18.8
90
8.4
85
2
12
110
110
170
170
220
9.8
80
2
9.75
11.25
12.0
13.5
15.0
13
11.3
12.8
14.4
16.0
75
2
15
75
2
16
70
2
18
60
2
20
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL TEMP. COEFF.
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
at VR = 0 V
DIODE CAP.
Cd (pF)
REVERSE CURRENT at
REVERSE VOLTAGE
IR (µA)
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
RESISTANCE
SZ (mV/K)
at IZtest
rdif (Ω)
BZX55-
CXXX
at IZtest
see Figs 5 and 6
at
IZ
at
IZtest
at
at
VR
Tj = 25 °C Tj = 150 °C
(V)
MIN. MAX. MAX.
MAX.
TYP.
MAX.
MAX.
MAX.
MAX.
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
220
220
55
80
18.7
20.4
22.9
27.0
29.7
32.4
35.1
38.7
44.0
49.0
55.0
62.0
70.0
78.0
5
60
55
50
50
45
45
45
40
40
40
40
35
35
35
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
2
2
2
2
2
2
2
2
2
2
2
16.5
1.25
1.25
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
22
24
27
30
33
36
39
43
47
51
56
62
68
75
5
18.0
220
80
5
20.25
22.25
24.75
27.0
220
80
5
220
80
5
220
80
5
500
90
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
29.25
32.25
35.25
38.25
42.0
600
90
700
110
125
135
150
200
250
700
1000
1000
1000
1500
46.5
51.0
56.25
Note
1. For BZX55-C2V4 up to C36 IZ = 1 mA; for C39 up to C75 IZ = 0.5 mA.
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX55 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
300
UNIT
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 8 mm
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
MBG930
3
10
δ = 1
R
th j-a
0.75
0.50
0.33
(K/W)
2
0.20
10
0.10
0.05
0.02
0.01
≤0.001
10
t
t
p
p
δ =
T
T
1
10
−1
2
3
4
5
1
10
10
10
10
10
t
(ms)
p
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1996 Apr 26
5
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX55 series
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
10
200
(1)
10
100
(2)
1
10
0
0.6
−1
0.8
1.0
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Fig.3 Maximum permissible non-repetitive
peak reverse power dissipation
versus duration.
Fig.4 Forward current as a function of forward
voltage; typical values.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
S
S
Z
Z
11
4V3
(mV/K)
(mV/K)
10
9V1
−1
5
3V9
3V6
8V2
7V5
6V8
6V2
5V6
5V1
−2
−3
0
3V3
4V7
3V0
2V4
2V7
−5
0
20
40
60
0
4
8
12
16
20
I
(mA)
Z
I
(mA)
Z
BZX55-C2V4 to C4V3.
BZX55-C4V7 to C12.
Tj = 25 to 150 °C.
Tj = 25 to 150 °C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
Fig.6 Temperature coefficient as a function of
working current; typical values.
1996 Apr 26
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX55 series
PACKAGE OUTLINE
n
0.56
max
1.85
max
4.25
max
MLA428 - 1
25.4 min
25.4 min
Dimensions in mm.
Fig.7 SOD27 (DO-35).
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Apr 26
7
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