933222700215 [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal;
| 型号： | 933222700215 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT25
NPN 2 GHz wideband transistor
November 1992
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
DESCRIPTION
PINNING
PIN
NPN transistor in a plastic SOT23
envelope.
DESCRIPTION
Code: V1p
It is primarily intended for use in RF
low power amplifiers, such as in
1
2
3
base
page
3
emitter
pocket phones, paging systems, etc.
The transistor features low current
consumption (100 µA to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.
collector
1
2
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
Ic
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
CONDITIONS
TYP.
MAX.
UNIT
open emitter
open base
−
−
−
−
8
V
5
V
6.5
30
−
mA
mW
GHz
Ptot
fT
up to Ts = 167 °C; note 1
IC = 1 mA; VCE = 1 V; f = 500 MHz;
amb = 25 °C
2.3
T
Cre
GUM
F
feedback capacitance
IC = 1 mA; VCE = 1 V; f = 1 MHz;
Tamb = 25 °C
−
0.45
−
pF
dB
dB
maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz;
18
3.8
Tamb = 25 °C
noise figure
IC = 1 mA; VCE = 1 V; f = 500 MHz;
−
Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
−
8
5
2
V
V
V
VCEO
VEBO
IC
open base
open collector
6.5
10
mA
mA
mW
°C
ICM
Ptot
Tstg
Tj
f > 1 MHz
up to Ts = 167 °C; note 1
30
−65
150
175
−
°C
Note
1. Ts is the temperature at the soldering point of the collector tab.
November 1992
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 167°C; note 1
260 K/W
Note
1. Ts = is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 5 V
MIN.
TYP.
MAX. UNIT
−
−
50
nA
hFE
IC = 10 µA; VCE = 1 V
20
20
1.2
−
30
40
2.3
−
−
IC = 1 mA; VCE = 1 V
−
fT
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
IC = 1 mA; VCE = 1 V; f = 500 MHz
IE = ie = 0; VCB = 0.5 V; f = 1 MHz
Ic = ic = 0; VEB = 0; f = 1 MHz
−
GHz
pF
Cc
Ce
Cre
0.6
0.5
0.45
−
−
pF
IC = 1 mA; VCE = 1 V; f = 1 MHz;
−
−
pF
Tamb = 25 °C
GUM
maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz;
−
−
−
−
18
−
−
−
−
dB
dB
dB
dB
(note 1)
Tamb = 25 °C
IC = 1 mA; VCE = 1 V; f = 800 MHz;
Tamb = 25 °C
12
F
noise figure
IC = 0.1 mA; VCE = 1 V;
5.5
3.8
f = 500 MHz; Tamb = 25 °C
IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
November 1992
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
MEA914
MEA908
1
60
handbook, halfpage
C
c
(pF)
h
FE
0.8
40
0.6
0.4
20
0.2
0
0
10
–3
–2
–1
10
(V)
0
2
4
6
8
10
10
1
10
I
(mA)
C
V
CB
VCE = 1 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.2 DC current gain as a function of collector
current.
Fig.3 Collector capacitance as a function of
collector-base voltage.
MEA907
MEA909
3
8
handbook, halfpage
handbook, halfpage
F
(dB)
f
T
(GHz)
6
2
4
2
0
1
0
–2
–1
0
0.5
1
1.5
2
10
10
1
10
I (mA)
C
I
(mA)
C
VCE = 1 V; f = 500 MHz; Tj = 25 °C.
VCE = 1 V; ZS = opt.; f = 500 MHz; Tamb = 25 °C.
Fig.5 Minimum noise figure as a function of
collector current.
Fig.4 Transition frequency as a function of
collector current.
November 1992
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
1
0.5
2
0.2
5
10
+ j
0.2
0.5
1
2
5
10
0
∞
– j
200
10
500
800 MHz
5
0.2
2
0.5
MEA916
1
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.6 Common emitter input reflection coefficient (S11).
90°
120°
60°
500
800 MHz
150°
30°
200
+ ϕ
− ϕ
1
2
3
180°
0°
30°
150°
60°
120°
MEA918
90°
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
Fig.7 Common emitter forward transmission coefficient (S21).
5
November 1992
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
90°
120°
60°
800 MHz
150°
30°
500
200
+ ϕ
− ϕ
0.05
0.1
0.15
180°
0°
30°
150°
60°
120°
MEA917
90°
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
Fig.8 Common emitter reverse transmission coefficient (S12).
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
200
10
500
5
0.2
800 MHz
2
0.5
MEA915
1
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.9 Common emitter output reflection coefficient (S22).
November 1992
6
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
November 1992
7
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1992
8
相关型号：
933224990113
DIODE 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode
NXP
933225010113
DIODE 5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode
NXP
933233150602
IC SQUARE, TIMER, PDIP8, 0.300 INCH, PLASTIC, SOT-97, DIP-8, Analog Waveform Generation Function
NXP
933237770112
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal
NXP
933237770126
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal
NXP
933237780112
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal
NXP
933237780116
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal
NXP
933237780126
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal
NXP
933237790116
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal
NXP
933237790126
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal
NXP
933239810113
DIODE 5.6 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, Voltage Regulator Diode
NXP
933239810133
DIODE 5.6 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, Voltage Regulator Diode
NXP
©2020 ICPDF网 联系我们和版权申明