74LVCV2G66GT [NXP]

POWER SUPPLY SUPPORT CKT;
74LVCV2G66GT
型号: 74LVCV2G66GT
厂家: NXP    NXP
描述:

POWER SUPPLY SUPPORT CKT

光电二极管
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中文:  中文翻译
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74LVCV2G66  
Overvoltage tolerant bilateral switch  
Rev. 6 — 22 July 2015  
Product data sheet  
1. General description  
The 74LVCV2G66 is a low-power, low-voltage, high-speed Si-gate CMOS device.  
The 74LVCV2G66 provides two single pole single throw analog or digital switches. Each  
switch includes an overvoltage tolerant input/output terminal (pin nZ), an output/input  
terminal (pin nY) and low-power active HIGH enable input (pin nE).  
The overvoltage tolerant switch terminals allow the switching of signals in excess of VCC  
The low-power enable input eliminates the necessity of using current limiting resistors in  
portable applications when using control logic signals much lower than VCC. These inputs  
are also overvoltage tolerant.  
.
2. Features and benefits  
Wide supply voltage range from 2.3 V to 5.5 V  
Ultra low-power operation  
Very low ON resistance:  
8.0 (typical) at VCC = 2.7 V  
7.5 (typical) at VCC = 3.3 V  
7.3 (typical) at VCC = 5.0 V.  
5 V tolerant input for interfacing with 5 V logic  
High noise immunity  
Switch handling capability of 32 mA  
CMOS low-power consumption  
Latch-up performance exceeds 250 mA  
Incorporates overvoltage tolerant analog switch technology  
Switch accepts voltages up to 5.5 V independent of VCC  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
3. Ordering information  
Table 1.  
Ordering information  
Type number  
Package  
Temperature range Name  
Description  
Version  
74LVCV2G66DP 40 C to +125 C  
74LVCV2G66DC 40 C to +125 C  
74LVCV2G66GT 40 C to +125 C  
74LVCV2G66GD 40 C to +125 C  
74LVCV2G66GM 40 C to +125 C  
TSSOP8 plastic thin shrink small outline package; 8 leads;  
body width 3 mm; lead length 0.5 mm  
SOT505-2  
SOT765-1  
SOT833-1  
SOT996-2  
SOT902-2  
VSSOP8 plastic very thin shrink small outline package; 8 leads;  
body width 2.3 mm  
XSON8  
XSON8  
XQFN8  
plastic extremely thin small outline package; no leads;  
8 terminals; body 1 1.95 0.5 mm  
plastic extremely thin small outline package; no leads;  
8 terminals; body 3 2 0.5 mm  
plastic, extremely thin quad flat package; no leads;  
8 terminals; body 1.6 1.6 0.5 mm  
4. Marking  
Table 2.  
Marking codes  
Type number  
Marking code[1]  
74LVCV2G66DP  
74LVCV2G66DC  
74LVCV2G66GT  
74LVCV2G66GD  
74LVCV2G66GM  
Y66  
Y66  
Y66  
Y66  
Y66  
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.  
5. Functional diagram  
ꢀ<  
ꢀ(  
ꢁ=  
ꢀ=  
ꢁ<  
;ꢀ  
;ꢀ  
ꢁ(  
ꢀꢀꢁDDJꢂꢃꢄ  
ꢀꢀꢁDDKꢅꢀꢅ  
Fig 1. Logic symbol  
Fig 2. IEC logic symbol  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
2 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
Z
Y
E
V
CC  
001aaa532  
Fig 3. Logic diagram (one switch)  
6. Pinning information  
6.1 Pinning  
ꢀꢁ/9&9ꢂ*ꢃꢃꢃ  
ꢀ=  
ꢀ<  
9
&&  
ꢀ(  
ꢁ<  
ꢁ=  
74LVCV2G66  
ꢁ(  
1
2
3
4
8
1Z  
1Y  
V
CC  
7
6
5
1E  
2Y  
2Z  
*1'  
2E  
GND  
DDDꢆꢀꢁꢅꢇꢃꢈ  
7UDQVSDUHQWꢉWRSꢉYLHZ  
001aai213  
Fig 4. Pin configuration SOT505-2 and SOT765-1  
Fig 5. Pin configuration SOT833-1  
ꢀꢁ/9&9ꢂ*ꢃꢃ  
WHUPLQDOꢉꢀ  
LQGH[ꢉDUHD  
74LVCV2G66  
ꢀ(  
ꢀ=  
ꢀ<  
1Z  
1Y  
1
2
3
4
8
7
6
5
V
CC  
1E  
2Y  
2Z  
ꢁ<  
ꢁ=  
2E  
ꢁ(  
GND  
DDDꢆꢀꢁꢅꢇꢃꢂ  
001aai214  
Transparent top view  
7UDQVSDUHQWꢉWRSꢉYLHZ  
Fig 6. Pin configuration SOT996-2  
Fig 7. Pin configuration SOT902-2  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
3 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
6.2 Pin description  
Table 3.  
Symbol  
Pin description  
Pin  
Description  
SOT505-2, SOT765-1,  
SOT902-2  
SOT996-2 and SOT833-1  
1Z  
1
2
3
4
5
6
7
8
7
6
5
4
3
2
1
8
independent input or output (overvoltage tolerant)  
independent input or output  
enable input (active HIGH)  
ground (0 V)  
1Y  
2E  
GND  
2Z  
independent input or output (overvoltage tolerant)  
independent input or output  
enable input (active HIGH)  
supply voltage  
2Y  
1E  
VCC  
7. Functional description  
Table 4.  
Function table[1]  
Input nE  
Switch  
L
OFF-state  
ON-state  
H
[1] H = HIGH voltage level; L = LOW voltage level.  
8. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).  
Symbol  
VCC  
VI  
Parameter  
Conditions  
Min  
0.5  
0.5  
50  
-
Max  
+6.5  
+6.5  
-
Unit  
V
supply voltage  
[1]  
input voltage  
V
IIK  
input clamping current  
switch clamping current  
switch voltage  
VI < 0.5 V or VI > 6.5 V  
VI < 0.5 V or VI > 6.5 V  
enable and disable mode  
VSW > 0.5 V or VSW < 6.5 V  
mA  
mA  
V
ISK  
50  
+6.5  
50  
100  
-
VSW  
ISW  
0.5  
-
switch current  
mA  
mA  
mA  
C  
ICC  
supply current  
-
IGND  
Tstg  
Ptot  
ground current  
100  
65  
-
storage temperature  
total power dissipation  
+150  
250  
[2]  
Tamb = 40 C to +125 C  
mW  
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
[2] For TSSOP8 package: above 55 C, the value of Ptot derates linearly with 2.5 mW/K.  
For VSSOP8 package: above 110 C, the value of Ptot derates linearly with 8 mW/K.  
For XSON8 and XQFN8 packages: above 118 C, the value of Ptot derates linearly with 7.8 mW/K.  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
4 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
9. Recommended operating conditions  
Table 6.  
Symbol  
VCC  
Recommended operating conditions  
Parameter  
Conditions  
Min  
2.3  
0
Typ  
Max  
5.5  
Unit  
V
supply voltage  
input voltage  
-
-
-
-
-
-
VI  
5.5  
V
[1]  
VSW  
switch voltage  
ambient temperature  
enable and disable mode  
0
5.5  
V
Tamb  
40  
-
+125  
20  
C  
[2]  
[2]  
t/V  
input transition rise and fall rate VCC = 2.3 V to 2.7 V  
VCC = 2.7 V to 5.5 V  
ns/V  
ns/V  
-
10  
[1] To avoid sinking GND current from terminal nZ when switch current flows in terminal nY, the voltage drop across the bidirectional switch  
must not exceed 0.4 V. If the switch current flows into terminal nZ, no GND current flows from terminal nY. In this case, there is no limit  
for the voltage drop across the switch.  
[2] Applies to control signal levels.  
10. Static characteristics  
Table 7.  
Static characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
40 C to +85 C  
40 C to +125 C Unit  
Min  
Typ[1]  
Max  
Min  
Max  
VIH  
HIGH-level  
input voltage  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
0.6VCC  
-
-
0.6VCC  
-
V
2.0  
-
-
-
2.0  
-
-
V
0.55VCC  
-
0.55VCC  
V
VIL  
LOW-level  
input voltage  
-
-
-
-
-
0.1VCC  
0.5  
-
-
-
-
0.1VCC  
0.5  
V
-
-
V
0.15VCC  
5  
0.15VCC  
5  
V
[2]  
II  
inputleakage pin nE; VI = 5.5 V or GND;  
0.1  
A  
current  
VCC = 0 V to 5.5 V  
[2][3]  
IS(OFF)  
OFF-state  
leakage  
current  
VCC = 2.3 V to 5.5 V; see Figure 8  
-
-
-
-
0.1  
0.1  
0.1  
10  
10  
10  
-
-
-
-
10  
10  
40  
A  
A  
A  
A  
[2][3]  
[2]  
IS(ON)  
ON-state  
leakage  
current  
VCC = 2.3 V to 5.5 V; see Figure 9  
VI = 5.5 V or GND;  
ICC  
supply  
current  
VSW = GND or VCC  
;
VCC = 2.3 V to 5.5 V  
[2]  
ICC  
additional  
supply  
pin nE; VI = VCC 0.6 V;  
0.1  
5
50  
V
SW = GND or VCC  
;
current  
VCC = 3.0 V to 5.5 V  
CI  
input  
capacitance  
-
-
2.5  
8.0  
-
-
-
-
-
-
pF  
pF  
CS(OFF) OFF-state  
capacitance  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
5 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
Table 7.  
Static characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter Conditions 40 C to +85 C  
40 C to +125 C Unit  
Min  
Typ[1]  
Max  
Min  
Max  
CS(ON)  
ON-state  
-
16  
-
-
-
pF  
capacitance  
[1] All typical values are measured at Tamb = 25 C.  
[2] These typical values are measured at VCC = 3.3 V.  
[3] For overvoltage signals (VSW > VCC), the condition VY < VZ must be observed.  
10.1 Test circuits  
9
9
&&  
&&  
Q(  
Q=  
Q(  
Q=  
9
9
,+  
,/  
Q<  
Q<  
,
,
6
6
*1'  
*1'  
9
,
9
2
9
,
9
2
ꢀꢀꢁDDJꢂꢅꢅ  
ꢀꢀꢁDDJꢂꢅꢃ  
VI = GND and VO = GND or 5.5 V.  
VI = 5.5 V or GND and VO = open circuit.  
Fig 8. Test circuit for measuring OFF-state leakage  
current  
Fig 9. Test circuit for measuring ON-state leakage  
current  
10.2 ON resistance  
Table 8.  
Resistance RON  
At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Figure 11 and Figure 12.  
Symbol  
Parameter  
Conditions  
40 C to +85 C 40 C to +125 C Unit  
Min Typ[1] Max  
Min  
Max  
RON(peak)  
ON resistance  
(peak)  
VSW = GND to VCC; VI = VIH; see Figure 10  
ISW = 8 mA; VCC = 2.3 V to 2.7 V  
ISW = 12 mA; VCC = 2.7 V  
-
-
-
-
13  
10  
30  
25  
20  
15  
-
-
-
-
30  
25  
20  
15  
ISW = 24 mA; VCC = 3.0 V to 3.6 V  
ISW = 32 mA; VCC = 4.5 V to 5.5 V  
8.3  
7.4  
RON(rail)  
ON resistance (rail) VSW = GND; VI = VIH; see Figure 10  
ISW = 8 mA; VCC = 2.3 V to 2.7 V  
ISW = 12 mA; VCC = 2.7 V  
-
-
-
-
8.5  
8.0  
7.5  
7.3  
20  
18  
15  
10  
-
-
-
-
20  
18  
15  
10  
ISW = 24 mA; VCC = 3.0 V to 3.6 V  
ISW = 32 mA; VCC = 4.5 V to 5.5 V  
VSW = VCC; VI = VIH  
ISW = 8 mA; VCC = 2.3 V to 2.7 V  
ISW = 12 mA; VCC = 2.7 V  
-
-
-
-
8.5  
7.2  
6.5  
5.7  
20  
18  
15  
10  
-
-
-
-
20  
18  
15  
10  
ISW = 24 mA; VCC = 3.0 V to 3.6 V  
ISW = 32 mA; VCC = 4.5 V to 5.5 V  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
6 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
Table 8.  
Resistance RON …continued  
At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Figure 11 and Figure 12.  
Symbol  
Parameter  
Conditions  
40 C to +85 C 40 C to +125 C Unit  
Min Typ[1] Max  
Min  
Max  
[2]  
RON(flat)  
ON resistance  
(flatness)  
VSW = GND to VCC; VI = VIH  
ISW = 8 mA; VCC = 2.5 V  
ISW = 12 mA; VCC = 2.7 V  
ISW = 24 mA; VCC = 3.3 V  
ISW = 32 mA; VCC = 5.0 V  
-
-
-
-
17  
10  
5
-
-
-
-
-
-
-
-
-
-
-
-
3
[1] All typical values are measured at Tamb = 25 C and nominal VCC  
.
[2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and  
temperature.  
10.3 ON resistance test circuit and graphs  
001aaa536  
16  
R
ON  
(Ω)  
V
= 2.5 V  
2.7 V  
3.3 V  
5.0 V  
CC  
12  
9
6:  
8
4
0
9
&&  
Q(  
Q<  
9
,+  
Q=  
*1'  
9
,
,
6:  
0
2
4
6
V (V)  
I
ꢀꢀꢁDDJꢂꢃꢀ  
VI = GND to 5.5 V; RON = VSW / ISW  
.
VI = GND to 5.5 V; Tamb = 25 C.  
Fig 10. Test circuit for measuring ON resistance  
Fig 11. Typical ON resistance as a function of input  
voltage  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
7 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
001aaa537  
001aaa538  
16  
16  
°
= +85 C  
T
amb  
R
(Ω)  
R
ON  
(Ω)  
ON  
°
+25 C  
°
= +85 C  
T
amb  
°
40 C  
°
+25 C  
12  
12  
°
+125 C  
°
40 C  
°
+125 C  
8
4
0
8
4
0
0
2
4
6
0
2
4
6
V (V)  
I
V (V)  
I
a. VCC = 2.5 V  
b. VCC = 2.7 V  
001aaa539  
001aaa540  
16  
16  
R
R
ON  
ON  
(Ω)  
(Ω)  
°
= +85 C  
T
amb  
12  
8
12  
8
°
+25 C  
°
= +85 C  
T
amb  
°
40 C  
°
+25 C  
°
+125 C  
°
40 C  
°
+125 C  
4
4
0
0
0
2
4
6
0
2
4
6
V (V)  
I
V (V)  
I
c. VCC = 3.3 V  
d. VCC = 5.0 V  
Fig 12. ON resistance as a function of input voltage at various supply voltages  
11. Dynamic characteristics  
Table 9.  
Dynamic characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 15.  
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit  
Min  
propagation delay nY to nZ or nZ to nY; see Figure 13 [2][3]  
Typ[1]  
Max  
Min  
Max  
tpd  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
-
0.4  
0.4  
0.3  
0.2  
1.2  
1.0  
0.8  
0.6  
-
-
-
-
2.0  
1.5  
1.5  
1.0  
ns  
ns  
ns  
ns  
-
-
-
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
8 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
Table 9.  
Dynamic characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 15.  
Symbol Parameter  
Conditions  
40 C to +85 C  
40 C to +125 C Unit  
Min  
Typ[1]  
Max  
Min  
Max  
ten  
enable time  
disable time  
nE to nY or nZ; see Figure 14 [4]  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
1.0  
1.0  
1.0  
1.0  
4.7  
4.4  
3.8  
2.7  
12  
8.5  
7.5  
5.0  
1.0  
1.0  
1.0  
1.0  
15  
11  
ns  
ns  
ns  
ns  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
nE to nY or nZ; see Figure 14 [5]  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
9.5  
6.5  
tdis  
1.0  
1.0  
1.0  
1.0  
6.0  
7.9  
6.5  
4.4  
16  
15  
1.0  
1.0  
1.0  
1.0  
20  
19  
ns  
ns  
ns  
ns  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
13.5  
9.0  
17  
11.5  
CPD  
power dissipation CL = 50 pF; fi = 10 MHz; VI = GND to 5.5 V [6]  
capacitance  
VCC = 2.5 V  
VCC = 3.3 V  
VCC = 5.0 V  
-
-
-
9.7  
10.3  
11.3  
-
-
-
-
-
-
-
-
-
pF  
pF  
pF  
[1] Typical values are measured at Tamb = 25 C and nominal VCC  
.
[2] tpd is the same as tPLH and tPHL  
.
[3] Propagation delay is the calculated RC time constant of the typical ON resistance of the switch and the specified capacitance when  
driven by an ideal voltage source (zero output impedance).  
[4] ten is the same as tPZH and tPZL  
.
[5] dis is the same as tPLZ and tPHZ  
t
.
[6] CPD is used to determine the dynamic power dissipation (PD in W).  
PD = CPD VCC2 fi N + {(CL + CS(ON)) VCC2 fo} where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
CS(ON) = maximum ON-state switch capacitance in pF;  
VCC = supply voltage in V;  
N = number of inputs switching;  
{(CL + CS(ON)) VCC2 fo} = sum of the outputs.  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
9 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
11.1 Waveforms and test circuit  
9
,
Q<ꢉRUꢉQ=ꢉ  
ꢉLQSXW  
9
9
0
0
*1'  
W
W
3/+  
3+/  
9
2+  
Q=ꢉRUꢉQ<ꢉ  
ꢉRXWSXW  
9
9
0
0
9
2/  
ꢀꢀꢁDDDꢇꢂꢁ  
Measurement points are given in Table 10.  
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.  
Fig 13. Input (nY or nZ) to output (nZ or nY) propagation delays  
9
,
Q(ꢉLQSXW  
9
0
*1'  
W
W
3=/  
3/=  
9
&&  
RXWSXWꢉ  
Q<ꢉRUꢉQ=  
Q<ꢉRUꢉQ=  
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9
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9
0
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VZLWFKꢉ  
VZLWFKꢉ  
HQDEOHG  
GLVDEOHG  
ꢀꢀꢁDDDꢇꢂꢉ  
Measurement points are given in Table 10.  
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.  
Fig 14. Enable and disable times  
Table 10. Measurement points  
Supply voltage  
VCC  
Input  
Output  
VM  
VM  
VX  
VY  
2.3 V to 2.7 V  
2.7 V  
0.5VCC  
1.5 V  
1.5 V  
0.5VCC  
0.5VCC  
1.5 V  
VOL + 0.1VCC  
VOL + 0.3 V  
VOL + 0.3 V  
VOL + 0.3 V  
VOH 0.1VCC  
VOH 0.3 V  
VOH 0.3 V  
VOH 0.3 V  
3.0 V to 3.6 V  
4.5 V to 5.5 V  
1.5 V  
0.5VCC  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
10 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
9
(;7  
9
&&  
5
/
9
9
2
,
*
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5
7
&
/
5
/
PQDꢊꢁꢊ  
Test data is given in Table 11.  
Definitions test circuit:  
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.  
CL = Load capacitance including jig and probe capacitance.  
RL = Load resistance.  
VEXT = External voltage for measuring switching times.  
Fig 15. Test circuit for measuring switching times  
Table 11. Test data  
Supply voltage  
VCC  
Input  
VI  
Load  
CL  
VEXT  
tr, tf  
RL  
tPLH, tPHL  
open  
tPZH, tPHZ  
GND  
tPZL, tPLZ  
2VCC  
2.3 V to 2.7 V  
2.7 V  
VCC  
2.7 V  
2.7 V  
VCC  
2.0 ns  
2.5 ns  
2.5 ns  
2.5 ns  
30 pF  
50 pF  
50 pF  
50 pF  
500   
500   
500   
500   
open  
GND  
6.0 V  
3.0 V to 3.6 V  
4.5 V to 5.5 V  
open  
GND  
6.0 V  
open  
GND  
2VCC  
11.2 Additional dynamic characteristics  
Table 12. Additional dynamic characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
THD  
total harmonic distortion  
fi = 1 kHz; RL = 10 k; CL = 50 pF; see Figure 16  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
0.42  
0.36  
0.47  
-
-
-
%
%
%
fi = 10 kHz; RL = 10 k; CL = 50 pF; see Figure 16  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
0.11  
0.07  
0.01  
-
-
-
%
%
%
f(3dB)  
3 dB frequency response RL = 600 ; CL = 50 pF; see Figure 17  
VCC = 2.3 V  
-
-
-
160  
200  
210  
-
-
-
MHz  
MHz  
MHz  
VCC = 3.0 V  
VCC = 4.5 V  
RL = 50 ; CL = 5 pF; see Figure 17  
VCC = 2.3 V  
-
-
-
180  
180  
180  
-
-
-
MHz  
MHz  
MHz  
VCC = 3.0 V  
VCC = 4.5 V  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
11 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
Table 12. Additional dynamic characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
iso  
isolation (OFF-state)  
RL = 600 ; CL = 50 pF; fi = 1 MHz; see Figure 18  
VCC = 2.3 V  
-
65  
65  
62  
-
-
-
dB  
dB  
dB  
VCC = 3.0 V  
-
-
VCC = 4.5 V  
RL = 50 ; CL = 5 pF; fi = 1 MHz; see Figure 18  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
37  
36  
36  
-
-
-
dB  
dB  
dB  
Vct  
crosstalk voltage  
between digital inputs and switch; RL = 600 ; CL = 50 pF; fi = 1 MHz;  
tr = tf = 2 ns; see Figure 19  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
91  
-
-
-
mV  
mV  
mV  
119  
205  
Xtalk  
crosstalk  
between switches; RL = 600 ; CL = 50 pF; fi = 1 MHz; see Figure 20  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
56  
55  
55  
-
-
-
dB  
dB  
dB  
between switches; RL = 50 ; CL = 5 pF; fi = 1 MHz; see Figure 20  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
29  
28  
28  
-
-
-
dB  
dB  
dB  
Qinj  
charge injection  
CL = 0.1 nF; Vgen = 0 V; Rgen = 0 ; fi = 1 MHz; RL = 1 M; see Figure 21  
VCC = 2.5 V  
VCC = 3.3 V  
VCC = 4.5 V  
VCC = 5.5 V  
-
-
-
-
< 0.003  
0.003  
-
-
-
-
pC  
pC  
pC  
pC  
0.0035  
0.0035  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
12 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
11.3 Test circuits  
V
0.5V  
CC  
CC  
nE  
V
R
L
IH  
10 μF  
nY/nZ  
nZ/nY  
V
O
f
600 Ω  
C
L
D
i
001aag492  
Test conditions:  
VCC = 2.3 V: Vi = 2 V (p-p).  
VCC = 3 V: Vi = 2.5 V (p-p).  
V
CC = 4.5 V: Vi = 4 V (p-p).  
Fig 16. Test circuit for measuring total harmonic distortion  
V
0.5V  
CC  
CC  
nE  
V
R
L
IH  
0.1 μF  
50 Ω  
nY/nZ  
nZ/nY  
V
O
f
C
L
dB  
i
001aag491  
To obtain 0 dBm level at the output, adjust fi voltage. Increase fi frequency until dB meter reads 3 dB.  
Fig 17. Test circuit for measuring the frequency response when switch is in ON-state  
0.5V  
V
0.5V  
CC  
CC  
CC  
nE  
R
L
V
R
L
IL  
0.1 μF  
nY/nZ  
nZ/nY  
V
O
f
50 Ω  
C
L
dB  
i
001aag493  
To obtain 0 dBm level at the input, adjust fi voltage.  
Fig 18. Test circuit for measuring isolation (OFF-state)  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
13 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
V
CC  
nE  
nY/nZ  
nZ/nY  
V
O
logic  
input  
G
R
L
C
L
50 Ω  
600 Ω  
0.5V  
0.5V  
001aag494  
CC  
CC  
Fig 19. Test circuit for measuring crosstalk voltage (between digital inputs and switch)  
0.5V  
CC  
1E  
V
IH  
R
L
0.1 μF  
50 Ω  
R
i
1Y or 1Z  
1Z or 1Y  
600 Ω  
CHANNEL  
ON  
C
50 pF  
L
f
V
O1  
i
0.5V  
CC  
2E  
V
R
L
IL  
2Y or 2Z  
2Z or 2Y  
CHANNEL  
OFF  
C
50 pF  
L
R
600 Ω  
i
V
O2  
001aag496  
20 log10 (VO2 / VO1) or 20 log10 (VO1 / VO2).  
Fig 20. Test circuit for measuring crosstalk between switches  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
14 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
V
CC  
nE  
R
gen  
nY/nZ  
nZ/nY  
V
O
R
1 MΩ  
C
L
0.1 nF  
G
logic  
input  
L
V
gen  
001aag495  
a. Test circuit  
logic  
input (nE)  
off  
on  
off  
V
O
ΔV  
O
mna675  
b. Input and output pulse definitions  
Qinj = VO CL.  
VO = output voltage variation.  
Rgen = generator resistance.  
V
gen = generator voltage.  
Fig 21. Test circuit for measuring charge injection  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
15 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
12. Application information  
The 74LVCV2G66 is used to reduce component count and footprint in low-power portable  
applications.  
Typical ‘66’ devices do not have low-power enable inputs causing a high ICC. To reduce  
power consumption in portable (battery) applications, a current limiting resistor is used.  
(see Figure 22a). The low-power enable inputs of the 74LVCV2G66 have much lower  
ICC, eliminating the necessity of the current limiting resistor (see Figure 22b).  
5 V  
1 MΩ  
5 V  
V
CC  
V
CC  
nE  
nY  
nE  
nY  
3 V  
3 V  
nZ  
nZ  
'66' device  
(a)  
74LVCV2G66  
(b)  
001aaa550  
Fig 22. Application example  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
16 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
13. Package outline  
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Fig 23. Package outline SOT505-2 (TSSOP8)  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
17 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
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Fig 24. Package outline SOT765-1 (VSSOP8)  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
18 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
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Fig 25. Package outline SOT833-1 (XSON8)  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
19 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
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74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
20 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
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74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
21 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
14. Abbreviations  
Table 13. Abbreviations  
Acronym  
CMOS  
DUT  
Description  
Complementary Metal-Oxide Semiconductor  
Device Under Test  
15. Revision history  
Table 14. Revision history  
Document ID  
Release date  
20150722  
Data sheet status  
Change notice  
Supersedes  
74LVCV2G66 v.6  
Modifications:  
Product data sheet  
-
74LVCV2G66 v.5  
Added type numbers 74LVCV2G66GT and.74LVCV2G66GM  
20130329 Product data sheet  
74LVCV2G66 v.5  
Modifications:  
-
74LVCV2G66 v.4  
For type number 74LVCV2G66GD XSON8U has changed to XSON8.  
74LVCV2G66 v.4  
Modifications:  
20111122  
Product data sheet  
-
74LVCV2G66 v.3  
Legal pages updated.  
74LVCV2G66 v.3  
74LVCV2G66 v.2  
74LVCV2G66 v.1  
20100616  
20080703  
20040402  
Product data sheet  
-
-
-
74LVCV2G66 v.2  
Product data sheet  
Product data sheet  
74LVCV2G66 v.1  
-
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
22 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
16. Legal information  
16.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
16.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
16.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
23 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
16.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
17. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
74LVCV2G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 6 — 22 July 2015  
24 of 25  
74LVCV2G66  
NXP Semiconductors  
Overvoltage tolerant bilateral switch  
18. Contents  
1
2
3
4
5
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2  
6
6.1  
6.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4  
7
8
9
Functional description . . . . . . . . . . . . . . . . . . . 4  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Recommended operating conditions. . . . . . . . 5  
10  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5  
Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
ON resistance. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
ON resistance test circuit and graphs. . . . . . . . 7  
10.1  
10.2  
10.3  
11  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8  
Waveforms and test circuit . . . . . . . . . . . . . . . 10  
Additional dynamic characteristics . . . . . . . . . 11  
Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
11.1  
11.2  
11.3  
12  
13  
14  
15  
Application information. . . . . . . . . . . . . . . . . . 16  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 22  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 22  
16  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 23  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 23  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
16.1  
16.2  
16.3  
16.4  
17  
18  
Contact information. . . . . . . . . . . . . . . . . . . . . 24  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP Semiconductors N.V. 2015.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 22 July 2015  
Document identifier: 74LVCV2G66  

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