74AHC1G79GW [NXP]

Single D-type flip-flop; positive-edge trigger; 单一的D- FL型IP- FL操作;正边沿触发
74AHC1G79GW
型号: 74AHC1G79GW
厂家: NXP    NXP
描述:

Single D-type flip-flop; positive-edge trigger
单一的D- FL型IP- FL操作;正边沿触发

触发器 锁存器 逻辑集成电路 光电二极管
文件: 总12页 (文件大小:87K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
DATA SHEET  
74AHC1G79; 74AHCT1G79  
Single D-type flip-flop;  
positive-edge trigger  
1999 May 18  
Product specification  
File under Integrated Circuits, IC06  
Philips Semiconductors  
Product specification  
74AHC1G79;  
74AHCT1G79  
Single D-type flip-flop; positive-edge trigger  
FEATURES  
QUICK REFERENCE DATA  
GND = 0 V; Tamb = 25 °C; tr = tf 3.0 ns.  
Symmetrical output impedance  
High noise immunity  
TYPICAL  
UNIT  
SYMBOL  
PARAMETER  
CONDITIONS  
ESD protection:  
AHC1G AHCT1G  
HBM EIA/JESD22-A114-A  
exceeds 2000 V;  
MM EIA/JESD22-A115-A  
exceeds 200 V  
tPHL/tPLH propagation delay CL = 15 pF;  
3.5  
3.5  
ns  
CP to Q  
VCC = 5 V  
CI  
input capacitance  
1.5  
1.5  
16  
pF  
pF  
CPD  
power dissipation  
capacitance  
notes 1 and 2; 15  
CL = 50 pF;  
Low power dissipation  
Balanced propagation delays  
Very small 5 pin package  
Output capability: standard.  
f = 1 Mhz  
Notes  
1. CPD is used to determine the dynamic power dissipation (PD in µW).  
PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:  
fi = input frequency in MHz;  
DESCRIPTION  
The 74AHC1G/AHCT1G79 is a  
high-speed Si-gate CMOS device.  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
The 74AHC1G/AHCT1G79 provides  
a single positive-edge triggered  
D-type flip-flop.  
VCC = supply voltage in V.  
2. The condition is VI = GND to VCC  
.
Information on the data input is  
transferred to the Q output on the  
LOW-to-HIGH transition of the clock  
pulse. The D input must be stable one  
set-up time prior to the LOW-to-HIGH  
clock transition for predictable  
operation.  
PINNING  
PIN  
1
SYMBOL  
D
DESCRIPTION  
data input  
2
CP  
clock pulse input  
ground (0 V)  
3
GND  
Q
4
data output  
FUNCTION TABLE  
5
VCC  
DC supply voltage  
See note 1.  
INPUTS  
CP  
OUTPUT  
D
L
Q + 1  
L
L
H
Q
H
X
Note  
1. H = HIGH voltage level;  
L = LOW voltage level;  
= LOW-to-HIGH CP transition;  
X = don’t care;  
Q + 1 = state after the next  
LOW-to-HIGH CP transition.  
1999 May 18  
2
Philips Semiconductors  
Product specification  
74AHC1G79;  
74AHCT1G79  
Single D-type flip-flop; positive-edge trigger  
ORDERING AND PACKAGE INFORMATION  
PACKAGES  
TYPE NUMBER  
TEMPERATURE  
RANGE  
PINS  
PACKAGE  
MATERIAL  
CODE  
MARKING  
74AHC1G79GW  
74AHCT1G79GW  
5
5
SC-88A  
SC-88A  
plastic  
plastic  
SOT353  
SOT353  
AP  
CP  
40 to +85 °C  
page  
page  
page  
D
CP  
1
2
3
5
4
V
CC  
1
2
D
Q
4
1
2
4
79  
Q
GND  
MNA441  
CP  
MNA439  
MNA440  
Fig.1 Pin configuration.  
Fig.2 Logic symbol.  
Fig.3 IEC logic symbol.  
CP  
C
C
C
C
D
TG  
C
TG  
C
Q
C
C
TG  
C
TG  
C
MNA442  
Fig.4 Logic diagram.  
3
1999 May 18  
Philips Semiconductors  
Product specification  
74AHC1G79;  
74AHCT1G79  
Single D-type flip-flop; positive-edge trigger  
RECOMMENDED OPERATING CONDITIONS  
74AHC1G  
74AHCT1G  
SYMBOL  
VCC  
PARAMETER  
CONDITIONS  
UNIT  
MIN. TYP. MAX. MIN. TYP. MAX.  
DC supply voltage  
input voltage  
2.0  
0
5.0  
5.5  
4.5  
0
5.0  
5.5  
V
VI  
5.5  
5.5  
V
VO  
output voltage  
0
VCC  
+85  
0
VCC  
+85  
V
Tamb  
operating ambient  
temperature range  
see DC and AC  
characteristics per  
device  
40  
+25  
40  
+25  
°C  
tr, tf (t/f) input rise and fall times VCC = 3.3 V ±0.3 V  
100  
20  
ns/V  
except for  
VCC = 5 V ±0.5 V  
20  
Schmitt-trigger inputs  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).  
SYMBOL  
PARAMETER  
DC supply voltage  
CONDITIONS  
MIN.  
0.5  
MAX.  
+7.0  
UNIT  
VCC  
VI  
V
input voltage range  
0.5  
+7.0  
20  
±20  
±25  
±75  
+150  
200  
V
IIK  
DC input diode current  
DC output diode current  
VI < 0.5  
VO < 0.5 or VO > VCC + 0.5 V; note 1  
mA  
mA  
mA  
mA  
°C  
IOK  
IO  
DC output source or sink current 0.5 V < VO < VCC + 0.5 V  
DC VCC or GND current  
ICC  
Tstg  
PD  
storage temperature  
65  
power dissipation per package  
temperature range: 40 to +85 °C;  
mW  
note 2  
Notes  
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
2. Above 55 °C the value of PD derates linearly with 2.5 mW/K.  
1999 May 18  
4
Philips Semiconductors  
Product specification  
74AHC1G79;  
74AHCT1G79  
Single D-type flip-flop; positive-edge trigger  
DC CHARACTERISTICS  
Family 74AHC1G  
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).  
TEST CONDITIONS  
Tamb (°C)  
SYMBOL  
PARAMETER  
25  
40 to +85  
MIN. MAX.  
UNIT  
OTHER  
VCC (V)  
MIN.  
1.5  
TYP.  
MAX.  
VIH  
HIGH-level input  
voltage  
2.0  
3.0  
5.5  
2.0  
3.0  
5.5  
2.0  
3.0  
4.5  
3.0  
1.5  
2.1  
3.85  
V
2.1  
3.85  
VIL  
LOW-level input voltage  
0.5  
0.9  
1.65  
0.5  
0.9  
1.65  
V
V
V
VOH  
HIGH-level output  
voltage; all outputs  
VI = VIH or VIL;  
IO = 50 µA  
1.9  
2.9  
4.4  
2.58  
2.0  
3.0  
4.5  
1.9  
2.9  
4.4  
2.48  
HIGH-level output  
voltage  
VI = VIH or VIL;  
IO = 4.0 mA  
VI = VIH or VIL;  
4.5  
3.94  
3.8  
IO = 8.0 mA  
VOL  
LOW-level output  
voltage; all outputs  
VI = VIH or VIL;  
IO = 50 µA  
2.0  
3.0  
4.5  
3.0  
0
0
0
0.1  
0.1  
0.1  
0.36  
0.1  
0.1  
0.1  
0.44  
V
V
LOW-level output  
voltage  
VI = VIH or VIL;  
IO = 4 mA  
VI = VIH or VIL;  
IO = 8 mA  
4.5  
0.36  
0.44  
II  
input leakage current  
VI = VCC or GND 5.5  
0.1  
1.0  
1.0  
10  
µA  
µA  
ICC  
quiescent supply  
current  
VI = VCC or GND; 5.5  
IO = 0  
CI  
input capacitance  
1.5  
10  
10  
pF  
1999 May 18  
5
Philips Semiconductors  
Product specification  
74AHC1G79;  
74AHCT1G79  
Single D-type flip-flop; positive-edge trigger  
Family 74AHCT1G  
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).  
TEST CONDITIONS  
Tamb (°C)  
SYMBOL  
PARAMETER  
25  
40 to +85 UNIT  
OTHER  
VCC (V)  
4.5 to 5.5 2.0  
MIN. TYP. MAX. MIN. MAX.  
VIH  
VIL  
HIGH-level input voltage  
LOW-level input voltage  
2.0  
V
V
V
4.5 to 5.5  
4.5  
0.8  
0.8  
VOH  
HIGH-level output  
voltage; all outputs  
VI = VIH or VIL;  
IO = 50 µA  
4.4  
4.5  
4.4  
HIGH-level output  
voltage  
VI = VIH or VIL;  
IO = 8.0 mA  
4.5  
4.5  
4.5  
3.94  
0
3.8  
V
V
V
VOL  
LOW-level output  
voltage; all outputs  
VI = VIH or VIL;  
IO = 50 µA  
0.1  
0.36  
0.1  
0.44  
LOW-level output voltage VI = VIH or VIL;  
IO = 8 mA  
II  
input leakage current  
VI = VIH or VIL  
5.5  
5.5  
0.1  
1.0  
1.0  
10  
µA  
µA  
ICC  
quiescent supply current VI = VCC or GND;  
IO = 0  
ICC  
additional quiescent  
supply current per input  
pin  
VI = 3.4 V  
other inputs at  
5.5  
1.35  
10  
1.5  
10  
mA  
pF  
VCC or GND; IO = 0  
CI  
input capacitance  
1.5  
1999 May 18  
6
Philips Semiconductors  
Product specification  
74AHC1G79;  
74AHCT1G79  
Single D-type flip-flop; positive-edge trigger  
AC CHARACTERISTICS  
Type 74AHC1G79  
GND = 0 V; tr = tf 3.0 ns.  
TEST CONDITIONS  
Tamb (°C)  
SYMBOL  
PARAMETER  
25  
40 to +85  
UNIT  
WAVEFORMS  
CL  
VCC (V)  
MIN. TYP. MAX. MIN. MAX.  
t
PHL/tPLH propagation delay  
CP to Q  
see Figs 5 and 6 15 pF 3.0 to 3.6  
50 pF 3.0 to 3.6  
4.9(1) 8.4  
6.9(1) 12.0  
3.5(2) 5.6  
5.1(2) 8.0  
1.0  
1.0  
1.0  
1.0  
3.0  
0
9.8  
14.0  
7.0  
10.0  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
15 pF 4.5 to 5.5  
50 pF 4.5 to 5.5  
tsu  
th  
set-up time D to CP  
hold time D to CP  
4.5 to 5.5 3.0  
1.0  
4.5 to 5.5 +2.0 1.0  
tW  
clock pulse width  
HIGH or LOW  
4.5 to 5.5 3.0  
4.5 to 5.5 90  
3.0  
fmax  
maximum clock  
pulse frequency  
90  
MHz  
Notes  
1. Typical values at VCC = 3.3 V.  
2. Typical values at VCC = 5.0 V.  
Type 74AHCT1G79  
GND = 0 V; tr = tf 3.0 ns.  
TEST CONDITIONS  
WAVEFORMS CL VCC (V)  
Tamb (°C)  
SYMBOL  
PARAMETER  
25  
MIN. TYP.  
40 to +85 UNIT  
MAX. MIN. MAX.  
tPHL/tPLH propagation delay  
CP to Q  
see Figs 5 and 6 15 pF 4.5 to 5.5  
50 pF 4.5 to 5.5  
3.5(1)  
5.0(1)  
1.0  
5.0  
8.0  
1.0  
1.0  
3.0  
0
6.0  
10.0  
ns  
ns  
ns  
ns  
ns  
tsu  
th  
set-up time D to CP  
hold time D to CP  
4.5 to 5.5 3.0  
4.5 to 5.5 +2.0 1.0  
tW  
clock pulse width  
HIGH or LOW  
4.5 to 5.5 3.0  
3.0  
fmax  
maximum clock  
pulse frequency  
4.5 to 5.5 90  
90  
MHz  
Note  
1. Typical values at VCC = 5.0 V.  
1999 May 18  
7
Philips Semiconductors  
Product specification  
74AHC1G79;  
74AHCT1G79  
Single D-type flip-flop; positive-edge trigger  
AC WAVEFORMS  
V
I
D INPUT  
GND  
V
I
CP INPUT  
V
V
M
M
GND  
t
t
PLH  
PHL  
V
OH  
V
V
M
Q OUTPUT  
M
V
MNA443  
OL  
VI INPUT  
VM  
VM  
FAMILY  
REQUIREMENTS INPUT OUTPUT  
AHC1G  
GND to VCC 50% VCC 50% VCC  
1.5 V 50% VCC  
AHCT1G GND to 3.0 V  
Fig.5 The clock pulse (CP) to output (Q) propagation delays.  
V
handbook, halfpage  
CC  
V
V
O
I
PULSE  
GENERATOR  
D.U.T.  
C
R
L
T
MNA101  
Definitions for test circuit:  
CL = load capacitance including jig and probe capacitance (see Chapter “AC characteristics”).  
RT = termination resistance should be equal to the output impedance Z0 of the pulse generator.  
Fig.6 Load circuitry for switching times.  
8
1999 May 18  
Philips Semiconductors  
Product specification  
74AHC1G79;  
74AHCT1G79  
Single D-type flip-flop; positive-edge trigger  
PACKAGE OUTLINE  
Plastic surface mounted package; 5 leads  
SOT353  
D
B
E
A
X
y
H
v
M
A
E
5
4
Q
A
A
1
1
2
3
c
e
1
b
L
p
w
M B  
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
(2)  
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SC-88A  
97-02-28  
SOT353  
1999 May 18  
9
Philips Semiconductors  
Product specification  
74AHC1G79;  
74AHCT1G79  
Single D-type flip-flop; positive-edge trigger  
Use a double-wave soldering method comprising a  
turbulent wave with high upward pressure followed by a  
smooth laminar wave.  
SOLDERING  
Introduction to soldering surface mount packages  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “Data Handbook IC26; Integrated Circuit Packages”  
(document order number 9398 652 90011).  
For packages with leads on two sides and a pitch (e):  
– larger than or equal to 1.27 mm, the footprint  
longitudinal axis is preferred to be parallel to the  
transport direction of the printed-circuit board;  
There is no soldering method that is ideal for all surface  
mount IC packages. Wave soldering is not always suitable  
for surface mount ICs, or for printed-circuit boards with  
high population densities. In these situations reflow  
soldering is often used.  
– smaller than 1.27 mm, the footprint longitudinal axis  
must be parallel to the transport direction of the  
printed-circuit board.  
The footprint must incorporate solder thieves at the  
downstream end.  
For packages with leads on four sides, the footprint must  
be placed at a 45° angle to the transport direction of the  
printed-circuit board. The footprint must incorporate  
solder thieves downstream and at the side corners.  
Reflow soldering  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Several methods exist for reflowing; for example,  
infrared/convection heating in a conveyor type oven.  
Throughput times (preheating, soldering and cooling) vary  
between 100 and 200 seconds depending on heating  
method.  
Typical dwell time is 4 seconds at 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Typical reflow peak temperatures range from  
215 to 250 °C. The top-surface temperature of the  
packages should preferable be kept below 230 °C.  
Manual soldering  
Fix the component by first soldering two  
diagonally-opposite end leads. Use a low voltage (24 V or  
less) soldering iron applied to the flat part of the lead.  
Contact time must be limited to 10 seconds at up to  
300 °C.  
Wave soldering  
Conventional single wave soldering is not recommended  
for surface mount devices (SMDs) or printed-circuit boards  
with a high component density, as solder bridging and  
non-wetting can present major problems.  
When using a dedicated tool, all other leads can be  
soldered in one operation within 2 to 5 seconds between  
270 and 320 °C.  
To overcome these problems the double-wave soldering  
method was specifically developed.  
If wave soldering is used the following conditions must be  
observed for optimal results:  
1999 May 18  
10  
Philips Semiconductors  
Product specification  
74AHC1G79;  
74AHCT1G79  
Single D-type flip-flop; positive-edge trigger  
Suitability of surface mount IC packages for wave and reflow soldering methods  
SOLDERING METHOD  
PACKAGE  
WAVE  
REFLOW(1)  
BGA, SQFP  
not suitable  
suitable  
suitable  
suitable  
suitable  
suitable  
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable(2)  
PLCC(3), SO, SOJ  
LQFP, QFP, TQFP  
SSOP, TSSOP, VSO  
suitable  
not recommended(3)(4)  
not recommended(5)  
Notes  
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum  
temperature (with respect to time) and body size of the package, there is a risk that internal or external package  
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the  
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.  
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink  
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).  
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.  
The package footprint must incorporate solder thieves downstream and at the side corners.  
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;  
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.  
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is  
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 May 18  
11  
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2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,  
Tel. +27 11 471 5401, Fax. +27 11 471 5398  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615 800, Fax. +358 9 6158 0920  
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427  
South America: Al. Vicente Pinzon, 173, 6th floor,  
04547-130 SÃO PAULO, SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 821 2382  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 93 301 6312, Fax. +34 93 301 4107  
Hungary: see Austria  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2741 Fax. +41 1 488 3263  
Indonesia: PT Philips Development Corporation, Semiconductors Division,  
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,  
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Middle East: see Italy  
Tel. +381 11 62 5344, Fax.+381 11 63 5777  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1999  
SCA64  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
245002/00/01/pp12  
Date of release: 1999 May 18  
Document order number: 9397 750 05983  

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