74AHC1G08GW-G [NXP]
2-input AND gate; 2输入与门
| 型号： | 74AHC1G08GW-G |
| 厂家： | 
NXP |
| 描述： | 2-input AND gate |
| 文件： | 总6页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
74AHC1G08; 74AHCT1G08
2-input AND gate
Product data sheet
1. General description
74AHC1G08 and 74AHCT1G08 are high-speed Si-gate CMOS devices. They provide a
2-input AND function.
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
2. Features
I Symmetrical output impedance
I High noise immunity
I Low power dissipation
I Balanced propagation delays
I SOT353-1 and SOT753 package options
I ESD protection:
N HBM JESD22-A114E: exceeds 2000 V
N MM JESD22-A115-A: exceeds 200 V
N CDM JESD22-C101C: exceeds 1000 V
I Specified from −40 °C to +125 °C
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range
−40 °C to +125 °C
Name
Description
Version
74AHC1G08GW
74AHCT1G08GW
74AHC1G08GV
74AHCT1G08GV
TSSOP5
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
SOT353-1
−40 °C to +125 °C
SC-74A
plastic surface-mounted package; 5 leads
SOT753
74AHC1G08; 74AHCT1G08
NXP Semiconductors
2-input AND gate
7. Functional description
Table 4.
Function table
H = HIGH voltage level; L = LOW voltage level
Inputs
Output
A
L
B
L
Y
L
L
L
H
L
H
L
H
H
H
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCC
VI
Parameter
Conditions
Min
−0.5
−0.5
−20
-
Max
+7.0
+7.0
-
Unit
V
supply voltage
input voltage
V
IIK
input clamping current
output clamping current
output current
VI < −0.5 V
mA
mA
mA
mA
mA
°C
[1]
IOK
VO < −0.5 V or VO > VCC + 0.5 V
−0.5 V < VO < VCC + 0.5 V
±20
±25
75
IO
-
ICC
supply current
-
IGND
Tstg
Ptot
ground current
−75
−65
-
-
storage temperature
total power dissipation
+150
250
[2]
Tamb = −40 °C to +125 °C
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For both TSSOP5 and SC-74A packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
74AHC1G08
74AHCT1G08
Unit
Min
2.0
0
Typ
Max
5.5
Min
4.5
0
Typ
Max
VCC
VI
supply voltage
input voltage
5.0
5.0
5.5
5.5
V
V
V
-
5.5
-
VO
output voltage
ambient temperature
0
-
VCC
+125
100
20
0
-
VCC
Tamb
∆t/∆V
−40
-
+25
−40
-
+25
+125 °C
input transition rise
and fall rate
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
-
-
-
-
-
ns/V
ns/V
-
-
20
74AHC_AHCT1G08_6
© NXP B.V. 2007. All rights reserved.
Product data sheet
3 of 11
74AHC1G08; 74AHCT1G08
NXP Semiconductors
2-input AND gate
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max
Min
Max
Min
Max
For type 74AHC1G08
VIH
HIGH-level
input voltage
VCC = 2.0 V
1.5
-
-
-
-
-
-
-
-
1.5
-
-
1.5
-
-
V
V
V
V
V
V
VCC = 3.0 V
2.1
2.1
2.1
VCC = 5.5 V
3.85
-
3.85
-
3.85
-
VIL
LOW-level
input voltage
VCC = 2.0 V
-
-
-
0.5
0.9
1.65
-
-
-
0.5
0.9
1.65
-
-
-
0.5
0.9
1.65
VCC = 3.0 V
VCC = 5.5 V
VOH
HIGH-level
VI = VIH or VIL
output voltage
IO = −50 µA; VCC = 2.0 V
IO = −50 µA; VCC = 3.0 V
IO = −50 µA; VCC = 4.5 V
IO = −4.0 mA; VCC = 3.0 V
IO = −8.0 mA; VCC = 4.5 V
VI = VIH or VIL
1.9
2.9
2.0
3.0
4.5
-
-
-
-
-
-
1.9
2.9
-
-
-
-
-
1.9
2.9
-
-
-
-
-
V
V
V
V
V
4.4
4.4
4.4
2.58
3.94
2.48
3.8
2.40
3.70
-
VOL
LOW-level
output voltage
IO = 50 µA; VCC = 2.0 V
IO = 50 µA; VCC = 3.0 V
IO = 50 µA; VCC = 4.5 V
IO = 4.0 mA; VCC = 3.0 V
IO = 8.0 mA; VCC = 4.5 V
-
-
-
-
-
-
0
0
0
-
0.1
0.1
-
-
-
-
-
-
0.1
0.1
-
-
-
-
-
-
0.1
0.1
V
V
0.1
0.1
0.1
V
0.36
0.36
0.1
0.44
0.44
1.0
0.55
0.55
2.0
V
-
V
II
input leakage VI = 5.5 V or GND;
current CC = 0 V to 5.5 V
-
µA
V
ICC
CI
supply current VI = VCC or GND; IO = 0 A;
CC = 5.5 V
-
-
-
1.0
10
-
-
10
10
-
-
40
10
µA
V
input
1.5
pF
capacitance
For type 74AHCT1G08
VIH
HIGH-level
input voltage
VCC = 4.5 V to 5.5 V
VCC = 4.5 V to 5.5 V
2.0
-
-
-
-
2.0
-
-
2.0
-
-
V
V
VIL
LOW-level
0.8
0.8
0.8
input voltage
VOH
HIGH-level
output voltage
VI = VIH or VIL; VCC = 4.5 V
IO = −50 µA
4.4
4.5
-
-
-
4.4
3.8
-
-
4.4
-
-
V
V
IO = −8.0 mA
3.94
3.70
VOL
LOW-level
output voltage
VI = VIH or VIL; VCC = 4.5 V
IO = 50 µA
-
-
-
0
-
0.1
0.36
0.1
-
-
-
0.1
0.44
1.0
-
-
-
0.1
0.55
2.0
V
IO = 8.0 mA
V
II
input leakage VI = 5.5 V or GND;
current CC = 0 V to 5.5 V
-
µA
V
74AHC_AHCT1G08_6
© NXP B.V. 2007. All rights reserved.
Product data sheet
4 of 11
74AHC1G08; 74AHCT1G08
NXP Semiconductors
2-input AND gate
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max
Min
Max
Min
Max
ICC
supply current VI = VCC or GND; IO = 0 A;
CC = 5.5 V
-
-
1.0
-
10
-
40
µA
V
∆ICC
additional
per input pin; VI = 3.4 V;
-
-
1.35
-
-
1.5
10
-
-
1.5
10
mA
supply current other inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
CI
input
-
1.5
10
pF
capacitance
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure 6.
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max
Min
Max
Min
Max
For type 74AHC1G08
[1]
[2]
tpd
propagation
delay
A and B to Y;
see Figure 5
VCC = 3.0 V to 3.6 V
CL = 15 pF
-
-
4.6
8.8
1.0
1.0
10.5
14.0
1.0
1.0
12.0
16.0
ns
ns
CL = 50 pF
6.5 12.3
[3]
[4]
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
-
-
3.2
4.6
17
5.9
7.9
-
1.0
1.0
-
7.0
9.0
-
1.0
1.0
-
8.0
10.5
-
ns
ns
pF
CL = 50 pF
CPD
power
per buffer;
dissipation
capacitance
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
For type 74AHCT1G08
[1]
[3]
tpd
propagation
delay
A and B to Y;
see Figure 5
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
-
-
3.6
5.1
19
6.2
7.9
-
1.0
1.0
-
7.1
9.0
-
1.0
1.0
-
8.0
10.5
-
ns
ns
pF
CL = 50 pF
[4]
CPD
power
per buffer;
dissipation
capacitance
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
[1] tpd is the same as tPLH and tPHL
.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts
74AHC_AHCT1G08_6
© NXP B.V. 2007. All rights reserved.
Product data sheet
5 of 11
74AHC1G08; 74AHCT1G08
NXP Semiconductors
2-input AND gate
13. Package outline
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
SOT353-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
4
A
2
A
(A )
3
A
1
θ
L
L
p
1
3
e
w M
b
p
detail X
e
1
0
1.5
3 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
A
A
A
b
c
D
E
e
e
1
H
L
L
p
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.1
0
1.0
0.8
0.30
0.15
0.25
0.08
2.25
1.85
1.35
1.15
2.25
2.0
0.46
0.21
0.60
0.15
7°
0°
mm
1.1
0.65
1.3
0.15
0.425
0.3
0.1
0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
VERSION
PROJECTION
IEC
JEDEC
JEITA
SOT353-1
MO-203
SC-88A
Fig 7. Package outline SOT353-1 (TSSOP5)
74AHC_AHCT1G08_6
© NXP B.V. 2007. All rights reserved.
Product data sheet
7 of 11
74AHC1G08; 74AHCT1G08
NXP Semiconductors
2-input AND gate
Plastic surface-mounted package; 5 leads
SOT753
D
B
E
A
X
y
H
v
M
A
E
5
4
Q
A
A
1
c
L
p
1
2
3
detail X
e
b
p
w
M B
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.100
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
IEC
SOT753
SC-74A
Fig 8. Package outline SOT753 (SC-74A)
74AHC_AHCT1G08_6
© NXP B.V. 2007. All rights reserved.
Product data sheet
8 of 11
相关型号：
74AHC1G08GW-Q100
AHC/VHC/H/U/V SERIES, 2-INPUT AND GATE, PDSO5, 1.25 MM, PLASTIC, MO-203, SC-88A, SOT353-1,TSSOP-5
NXP
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