600F1R5BT250XT [NXP]

RF Power GaN Transistor;


型号：	600F1R5BT250XT
厂家：	NXP
描述：	RF Power GaN Transistor
文件：	总8页 (文件大小：221K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Data Sheet: Technical Data

Document identifier: A3G18D510--04S

Rev. 0 — August 2020

RF Power GaN Transistor

This 56 W symmetrical Doherty RF power GaN transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 1805 to 2200 MHz.

A3G18D510--04S

This part is characterized and performance is guaranteed for applications

operating in the 1805 to 2200 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

1805–2200 MHz, 56 W Avg., 48 V

AIRFAST RF POWER GaN

TRANSISTOR

2000 MHz



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

_DQA= 250 mA, V_GSB= –5.0 Vdc, P_out= 56 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

1805 MHz

1995 MHz

2170 MHz

(dB)

16.0

16.8

15.4

(%)

54.3

52.2

53.9

8.0

7.8

7.6

–26.4

–31.9

–33.8

NI--780S--4L

Features



High terminal impedances for optimal broadband performance

Advanced high performance in--package Doherty

Improved linearized error vector magnitude with next generation signal

Able to withstand extremely high output VSWR and broadband operating

conditions

Carrier

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

(Top View)

Figure 1. Pin Connections

 2016–2016–2017 NXP B.V.

NXP reserves the right to change the detail specifications as may be required to permit

improvements in the design of its products.

NXP Semiconductors

Table 1. Maximum Ratings

Rating

Symbol

Value

125

Unit

Vdc

C

Drain--Source Voltage

DSS

Gate--Source Voltage

–8, 0

Operating Voltage

0 to +55

Maximum Forward Gate Current, I

Storage Temperature Range

, @ T = 25C

G (A+B)

GMAX

stg

–65 to +150

–55 to +150

–55 to +225

275

Case Operating Temperature Range

C

Operating Active Die Surface Temperature Range

C

(1)

Maximum Channel Temperature

C

Table 2. Thermal Characteristics

Characteristic

Symbol

(IR)

Value

Unit

(2)

Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case

0.83

C/W



Case Temperature 72C, P = 68 W

(3)

Thermal Resistance by Finite Element Analysis, Channel--to--Case



CHC

1.1

C/W

Case Temperature 72C, P = 68 W

(FEA)

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JS--001--2017)

Charge Device Model (per JS--002--2014)

Table 4. Electrical Characteristics (T = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

(4)

Off Characteristics

Off--State Drain Leakage

D(BR)

(V = 150 Vdc, V = –8 Vdc)

Carrier

Peaking

—

24.3

mAdc

(V = 150 Vdc, V = –8 Vdc)

On Characteristics — Side A, Carrier

Gate Threshold Voltage

–3.8

–3.7

–3.0

–3.2

—

–2.3

–2.7

—

Vdc

GS(th)

(V = 10 Vdc, I = 24.3 mAdc)

Gate Quiescent Voltage

(V = 48 Vdc, I = 250 mAdc, Measured in Functional Test)

GSA(Q)

Gate--Source Leakage Current

(V = 150 Vdc, V = –8 Vdc)

–12.2

mAdc

GSS

On Characteristics — Side B, Peaking

Gate Threshold Voltage

–3.8

–3.3

—

–2.3

—

Vdc

GS(th)

(V = 10 Vdc, I = 24.3 mAdc)

Gate--Source Leakage Current

(V = 150 Vdc, V = –8 Vdc)

–12.2

mAdc

GSS

1. Reliability tests were conducted at 225C. Operations with T at 275C will reduce median time to failure.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

3. R

(FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated



CHC

[A + B/(T + 273)]

by the expression MTTF (hours) = 10

, where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8263.

4. Each side of device measured separately.

(continued)

A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020

Data Sheet: Technical Data

2 / 8

NXP Semiconductors

Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

(1,2)

Functional Tests

(In NXP Doherty Production Test Fixture, 50 ohm system) V = 48 Vdc, I

= 250 mA, V = –5.0 Vdc,

GSB

DQA

= 56 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

out

ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]

Power Gain

15.0

44.3

16.0

54.3

18.0

—

Drain Efficiency



@ 3 dB Compression Point, CW

P3dB

53.6

55.1

—

dBm

dBc

out

Adjacent Channel Power Ratio

ACPR

—

–26.4

–21.9

Wideband Ruggedness (In NXP Doherty Production Test Fixture, 50 ohm system) I

= 250 mA, V

= –5.0 Vdc, f = 1995 MHz, Additive

GSB

DQA

White Gaussian Noise (AWGN) with 10 dB PAR

ISBW of 400 MHz at 55 Vdc, 228 W Avg. Modulated Output Power

(8.5 dB Input Overdrive from 228 W Avg. Modulated Output Power)

No Device Degradation

Typical Performance (In NXP Doherty Production Test Fixture, 50 ohm system) V = 48 Vdc, I

= 250 mA, V = –5.0 Vdc,

GSB

DQA

1805–2170 MHz Bandwidth

(2)

@ 3 dB Compression Point

P3dB

—

355

–25

—

out

AM/PM

(Maximum value measured at the P3dB compression point across





the 1805–2170 MHz bandwidth)

VBW Resonance Point

VBW

—

260

—

MHz

res

(IMD Third Order Intermodulation Inflection Point)

Gain Flatness in 365 MHz Bandwidth @ P = 56 W Avg.

—

1.7

—

out

Gain Variation over Temperature

G

0.013

dB/C

(–40C to +85C)

Output Power Variation over Temperature

P1dB

—

0.013

—

dB/C

(–40C to +85C)

Table 5. Ordering Information

Device

Tape and Reel Information

Package

A3G18D510--04SR3

R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel

NI--780S--4L

1. Part internally input matched.

2. P3dB = P

+ 7.0 dB where P

is the average output power measured using an unclipped W--CDMA single--carrier input signal where

avg

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors in a Doherty Configuration

Bias ON the device

1. Set gate voltage V

and V

to –5 V.

GSB

GSA

2. Set drain voltage V

and V

to nominal supply voltage (+48 V).

DSB

DSA

3. Increase V

4. Increase V

(carrier side) until I

current is attained.

DQA

GSA

GSB

(peaking side) to target bias voltage.

5. Apply RF input power to desired level.

Bias OFF the device

1. Disable RF input power.

2. Adjust gate voltage V

and V

to –5 V.

GSB

GSA

3. Adjust drain voltage V

and V

to 0 V. Allow adequate time

DSB

DSA

for drain voltage to reduce to 0 V from external drain capacitors.

4. Disable V and V

GSB

GSA

A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020

Data Sheet: Technical Data

3 / 8

NXP Semiconductors

GGA

DDA

C15

C16

C17

A3G18D510-04S

Rev. 3

C18

C23

C19

C20

C21 C22

C25

C24

C10

cut out

area

C11

C12

D135295

C26

C27

C14

C13

C28

GGB

DDB

aaa--038671

Figure 2. A3G18D510--04S Production Test Circuit Component Layout

Table 6. A3G18D510--04S Production Test Circuit Component Designations and Values

Part

C1, C13, C16, C27

Description

10 F Chip Capacitor

Part Number

C5750X7S2A106M230KB

Manufacturer

TDK

C2, C14, C17, C21, C24, C26

15 pF Chip Capacitor

600F150JT250XT

600F0R4BT250XT

600F110JT250XT

600F1R6BT250XT

600F1R0BT250XT

600F0R8BT250XT

600F1R5BT250XT

600F2R0BT250XT

MCGPR100V227M16X26

600F1R2BT250XT

600F0R2BT250XT

C10A50Z4

ATC

0.4 pF Chip Capacitor

ATC

C4, C5, C9, C10

11 pF Chip Capacitor

ATC

1.6 pF Chip Capacitor

ATC

C7, C22

C8, C18

C11, C20

C12

1 pF Chip Capacitor

ATC

0.8 pF Chip Capacitor

ATC

1.5 pF Chip Capacitor

ATC

2 pF Chip Capacitor

ATC

C15, C28

C19, C23

C25

220 F, 100 V Electrolytic Capacitor

1.2 pF Chip Capacitor

Multicomp

ATC

0.2 pF Chip Capacitor

ATC

50 , 10 W Termination Chip Resistor

9.1 , 1/4 W Chip Resistor

7.5 , 1/4 W Chip Resistor

3.9 , 1/4 W Chip Resistor

4.3 , 1/4 W Chip Resistor

1700–2000 MHz, 90, 3 dB Hybrid Coupler

Anaren

Vishay

Anaren

MTL

CRCW12069R10FKEA

CRCW12067R50FKEA

CRCW12063R90FKEA

CRCW12064R30FKEA

X3C19P1-03S

PCB

RO4350B, 0.020,  = 3.66

D135295

A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020

Data Sheet: Technical Data

4 / 8

NXP Semiconductors

Package Information

A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020

Data Sheet: Technical Data

5 / 8

NXP Semiconductors

A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020

Data Sheet: Technical Data

6 / 8

NXP Semiconductors

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following resources to aid your design process.

Application Notes



AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Software

.s2p File

Development Tools

Printed Circuit Boards



REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

Aug. 2020

 Initial release of data sheet

A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020

Data Sheet: Technical Data

7 / 8

NXP Semiconductors

Information in this document is provided solely to enable system and software

implementers to use NXP products. There are no express or implied copyright licenses

granted hereunder to design or fabricate any integrated circuits based on the information

in this document. NXP reserves the right to make changes without further notice to any

products herein.

How to Reach Us

Home Page:

nxp.com

Web Support:

nxp.com/support

NXP makes no warranty, representation, or guarantee regarding the suitability of its

products for any particular purpose, nor does NXP assume any liability arising out of the

application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation consequential or incidental damages. “Typical” parameters

that may be provided in NXP data sheets and/or specifications can and do vary in

different applications, and actual performance may vary over time. All operating

parameters, including “typicals,” must be validated for each customer application by

customer’s technical experts. NXP does not convey any license under its patent rights

nor the rights of others. NXP sells products pursuant to standard terms and conditions of

sale, which can be found at the following address: nxp.com/SalesTermsandConditions.

NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service

names are the property of their respective owners.

E NXP B.V. 2020

A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020

Data Sheet: Technical Data

^{Date of release: Aug}8^us/^{t 2}8⁰²⁰

Document identifier: A3G18D510--04S

600F1R5BT250XT [NXP]

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