2PD2150 [NXP]
20 V, 3 A NPN low VCEsat transistor; 20 V ，3A NPN低VCEsat晶体管晶体管
| 型号： | 2PD2150 |
| 厂家： | 
NXP |
| 描述： | 20 V, 3 A NPN low VCEsat transistor |
| 文件： | 总11页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 01 — 22 April 2005
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: 2PB1424.
1.2 Features
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability: IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
■ DC-to-DC conversion
■ MOSFET gate driving
■ Motor control
■ Charging circuits
■ Power switches (e.g. motors, fans)
■ Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
Quick reference data
Parameter
Conditions
Min
Typ
Max
20
3
Unit
V
collector-emitter voltage open base
-
-
-
-
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
hFE
DC current gain
VCE = 2 V;
IC = 0.1 A
180
-
390
2PD2150
Philips Semiconductors
20 V, 3 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pinning
Pin
1
Description
emitter
Simplified outline
Symbol
2
1
2
collector
base
3
3
3
2
1
sym042
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
2PD2150
SC-62
plastic surface mounted package; collector pad for
good heat transfer; 3 leads
SOT89
4. Marking
Table 4:
Marking codes
Type number
Marking code
2PD2150
M2
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
2 of 11
2PD2150
Philips Semiconductors
20 V, 3 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
40
20
5
Unit
V
collector-base voltage
open emitter
-
-
-
-
-
collector-emitter voltage open base
V
emitter-base voltage
collector current (DC)
peak collector current
open collector
V
1
A
ICM
single pulse;
3
A
tp ≤ 1 ms
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
500
mW
mW
mW
°C
-
850
-
1200
150
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
006aaa449
1600
P
tot
(mW)
(1)
(2)
(3)
1200
800
400
0
−65 −35 −5
25
55
85 115 145 175
Tamb (°C)
(1) FR4 PCB; mounting pad for collector 6 cm2
(2) FR4 PCB; mounting pad for collector 1 cm2
(3) FR4 PCB; standard footprint
Fig 1. Power derating curves
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
3 of 11
2PD2150
Philips Semiconductors
20 V, 3 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
250
147
104
20
Unit
K/W
K/W
K/W
K/W
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
in free air
-
-
-
-
-
-
-
-
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 m2.
006aaa450
3
10
Z
th(j-a)
duty cycle =
1.00
(K/W)
2
10
0.75
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
1
0.00
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; mounting pad for collector 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
4 of 11
2PD2150
Philips Semiconductors
20 V, 3 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
ICBO collector-base cut-off VCB = 30 V; IE = 0 A
Min
Typ
Max
0.1
10
Unit
µA
-
-
-
-
current
VCB = 30 V; IE = 0 A;
µA
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
0.1
µA
hFE
DC current gain
VCE = 2 V; IC = 0.1 A
IC = 2 A; IB = 100 mA
180
-
-
-
390
0.5
VCEsat
collector-emitter
V
saturation voltage
[1]
[1]
VBEon
base-emitter turn-on VCE = 10 V; IC = 5 mA
-
-
-
-
0.7
1
V
voltage
VCE = 1 V; IC = 1 A
-
V
fT
transition frequency
IC = 500 mA; VCE = 2 V;
f = 100 MHz
220
-
MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
20
-
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
5 of 11
2PD2150
Philips Semiconductors
20 V, 3 A NPN low VCEsat (BISS) transistor
006aaa451
14.4
006aaa452
3
400
16
I
(mA)
B
(1)
h
FE
12.8
I
C
(A)
11.2
300
200
100
0
9.6
8
(2)
(3)
2
1
0
6.4
4.8
3.2
1.6
2
3
4
0
1
2
3
4
5
1
10
10
10
10
V
(V)
I
(mA)
CE
C
Tamb = 25 °C
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. Collector current as a function of
Fig 4. DC current gain as a function of collector
current; typical values
collector-emitter voltage; typical values
006aaa453
006aaa454
1
1
V
V
CEsat
CEsat
(mV)
(mV)
−1
−1
10
10
10
10
10
10
(1)
(1)
(3)
(2)
(2)
(3)
−2
−2
−3
−3
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
10
1
10
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 10
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
6 of 11
2PD2150
Philips Semiconductors
20 V, 3 A NPN low VCEsat (BISS) transistor
8. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
1
2
3
0.53
0.40
0.48
0.35
0.44
0.23
1.5
3
Dimensions in mm
04-08-03
Fig 7. Package outline SOT89 (SC-62/TO-243)
9. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package Description Packing quantity
1000
4000
2PD2150
SOT89
8 mm pitch, 12 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 16.
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
7 of 11
2PD2150
Philips Semiconductors
20 V, 3 A NPN low VCEsat (BISS) transistor
10. Soldering
4.75
2.25
2.00
1.90
1.20
solder lands
solder resist
0.85
0.20
1.20
1.20
occupied area
1.70
solder paste
4.60
4.85
0.50
1.20
1.00
(3x)
3
2
1
msa442
0.60 (3x)
0.70 (3x)
3.70
3.95
SOT89 standard mounting conditions for reflow soldering
Dimensions in mm
Fig 8. Reflow soldering footprint SOT89 (SC-62/TO-243)
11. Mounting
32 mm
10 mm
40
mm
10 mm
2.5 mm
1 mm
0.5 mm
5 mm
3.96 mm
1.6 mm
001aab105
Fig 9. FR4 PCB; mounting pad for collector 1 cm2
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
8 of 11
2PD2150
Philips Semiconductors
20 V, 3 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9:
Revision history
Document ID
Release date Data sheet status
20050422 Product data sheet
Change notice Doc. number
9397 750 14987
Supersedes
2PD2150_1
-
-
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
9 of 11
2PD2150
Philips Semiconductors
20 V, 3 A NPN low VCEsat (BISS) transistor
13. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
14. Definitions
15. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
10 of 11
2PD2150
Philips Semiconductors
20 V, 3 A NPN low VCEsat (BISS) transistor
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
9
10
11
12
13
14
15
16
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 22 April 2005
Document number: 9397 750 14987
Published in The Netherlands
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