2PA1774SM [NXP]

PNP general purpose transistor; PNP通用晶体管
2PA1774SM
型号: 2PA1774SM
厂家: NXP    NXP
描述:

PNP general purpose transistor
PNP通用晶体管

晶体 晶体管 开关
文件: 总8页 (文件大小:71K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
2PA1774M series  
PNP general purpose transistor  
Product specification  
2004 Feb 19  
Philips Semiconductors  
Product specification  
PNP general purpose transistor  
2PA1774M series  
FEATURES  
QUICK REFERENCE DATA  
SYMBOL  
Leadless ultra small plastic package  
(1 mm × 0.6 mm × 0.5 mm)  
PARAMETER  
MAX. UNIT  
VCEO  
IC  
collector-emitter voltage  
40  
V
Board space 1.3 mm × 0.9 mm  
collector current (DC)  
peak collector current  
100  
200  
mA  
mA  
Power dissipation comparable to SOT23.  
ICM  
APPLICATIONS  
PINNING  
PIN  
General purpose small signal DC  
DESCRIPTION  
Low and medium frequency AC applications  
1
2
3
base  
Mobile communications, digital (still) cameras, PDAs,  
PCMCIA cards.  
emitter  
collector  
DESCRIPTION  
PNP general purpose transistor in a SOT883 leadless ultra  
small plastic package.  
NPN complement: 2PC4617M series.  
3
2
handbook, halfpage  
2
1
3
MARKING  
1
Bottom view  
MAM469  
TYPE NUMBER  
2PA1774QM  
MARKING CODE  
PB  
PA  
PC  
2PA1774RM  
2PA1774SM  
Fig.1 Simplified outline (SOT883) and symbol.  
ORDERING INFORMATION  
TYPE  
PACKAGE  
DESCRIPTION  
leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm  
NUMBER  
NAME  
VERSION  
2PA1774QM  
2PA1774RM  
2PA1774SM  
SOT883  
2004 Feb 19  
2
Philips Semiconductors  
Product specification  
PNP general purpose transistor  
2PA1774M series  
LIMITING VALUES  
In accordance with the Absolute Maximum System (IEC 60134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
50  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
open base  
40  
open collector  
5  
100  
200  
100  
mA  
mA  
mA  
ICM  
IBM  
Ptot  
total power dissipation  
Tamb 25 °C  
note 1  
250  
mW  
mW  
°C  
note 2  
430  
Tstg  
Tj  
storage temperature  
65  
+150  
150  
junction temperature  
°C  
Tamb  
operating ambient temperature  
65  
+150  
°C  
Notes  
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.  
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
thermal resistance from junction to ambient in free air  
note 1  
note 2  
500  
290  
K/W  
K/W  
Notes  
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.  
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.  
2004 Feb 19  
3
 
 
 
 
Philips Semiconductors  
Product specification  
PNP general purpose transistor  
2PA1774M series  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
VCB = 30 V; IE = 0  
MIN.  
MAX.  
100  
UNIT  
nA  
ICBO  
collector-base cut-off current  
VCB = 30 V; IE = 0; Tj = 150 °C  
VEB = 4 V; IC = 0  
5  
µA  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
2PA1774QM  
100  
nA  
VCE = 6 V; IC = 1 mA  
120  
180  
270  
270  
390  
560  
200  
2.2  
2PA1774RM  
2PA1774SM  
VCEsat  
Cc  
collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1  
mV  
pF  
collector capacitance  
transition frequency  
IE = ie = 0; VCB = 12 V; f = 1 MHz  
fT  
VCE = 12 V; IC = 2 mA;  
100  
MHz  
f = 100 MHz  
Note  
1. Pulse test: tp 300 µs; δ ≤ 0.02.  
MDB664  
MDB663  
3
1200  
10  
handbook, halfpage  
handbook, halfpage  
V
BE  
(1)  
(mV)  
1000  
h
FE  
(2)  
(3)  
(1)  
800  
2
10  
(2)  
600  
(3)  
400  
200  
10  
10  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
1  
10  
10  
10  
I
(mA)  
I
(mA)  
C
C
VCE = 6 V.  
(1) amb = 55 °C.  
VCE = 6 V.  
(1) amb = 150 °C.  
T
T
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
Fig.3 Base-emitter voltage as a function of  
collector current; typical values.  
Fig.2 DC current gain; typical values.  
2004 Feb 19  
4
 
Philips Semiconductors  
Product specification  
PNP general purpose transistor  
2PA1774M series  
MDB666  
MDB665  
3
1200  
10  
handbook, halfpage  
handbook, halfpage  
V
BEsat  
(mV)  
1000  
V
CEsat  
(mV)  
(1)  
(2)  
800  
600  
400  
200  
2
10  
(1)  
(2)  
(3)  
(3)  
10  
1  
2
1  
2
3
10  
1  
10  
10  
(mA)  
10  
1  
10  
10  
10  
I
C
I
(mA)  
C
IC/IB = 10.  
IC/IB = 10.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
Fig.4 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.5 Base-emitter saturation voltage as a  
function of collector current; typical values.  
MDB667  
MDB668  
3
10  
0.2  
handbook, halfpage  
(1)  
I
C
(2)  
(A)  
(3)  
R
CEsat  
0.16  
0.12  
0.08  
0.04  
0
(4)  
(5)  
()  
(6)  
(7)  
2
10  
(8)  
(9)  
(1)  
10  
(2)  
(10)  
(3)  
1
10  
1  
2
3
0
2  
4  
6  
8  
10  
(V)  
1  
10  
10  
10  
V
CE  
I
C (mA)  
IC/IB = 10.  
(1) IB = 2.7 mA.  
(5) IB = 1.62 mA.  
(6) IB = 1.35 mA.  
(7) IB = 1.08 mA.  
(8) IB = 0.81 mA.  
(9) IB = 0.54 mA.  
(10) IB = 0.27 mA.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(2) IB = 2.43 mA.  
(3) IB = 2.16 mA.  
(4) IB = 1.89 mA.  
Fig.7 Collector-emitter equivalent on-resistance  
as a function of collector current; typical  
values.  
Fig.6 Collector current as a function of  
collector-emitter voltage; typical values.  
2004 Feb 19  
5
Philips Semiconductors  
Product specification  
PNP general purpose transistor  
2PA1774M series  
PACKAGE OUTLINE  
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm  
SOT883  
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5  
1 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
1
UNIT  
A
b
b
D
E
e
e
L
L
1
1
1
max.  
0.50  
0.46  
0.20 0.55 0.62 1.02  
0.12 0.47 0.55 0.95  
0.30 0.30  
0.22 0.22  
mm  
0.03  
0.35 0.65  
Note  
1. Including plating thickness  
REFERENCES  
JEDEC  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEITA  
03-02-05  
03-04-03  
SOT883  
SC-101  
2004 Feb 19  
6
Philips Semiconductors  
Product specification  
PNP general purpose transistor  
2PA1774M series  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Feb 19  
7
 
 
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/01/pp8  
Date of release: 2004 Feb 19  
Document order number: 9397 750 11698  

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