1N5062 [NXP]
Controlled avalanche rectifiers; 控制雪崩整流器
| 型号： | 1N5062 |
| 厂家： | 
NXP |
| 描述： | Controlled avalanche rectifiers |
| 文件： | 总7页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
1N5059 to 1N5062
Controlled avalanche rectifiers
1996 Jun 19
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass package, using a high
temperature alloyed construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
k
a
• Guaranteed avalanche energy
MAM047
absorption capability
Fig.1 Simplified outline (SOD57) and symbol.
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
1N5059
−
−
−
−
200
400
600
800
V
V
V
V
1N5060
1N5061
1N5062
VRWM
crest working reverse voltage
1N5059
−
−
−
−
200
400
600
800
V
V
V
V
1N5060
1N5061
1N5062
VR
continuous reverse voltage
1N5059
−
−
−
−
−
200
400
600
800
2.0
V
V
V
V
A
1N5060
1N5061
1N5062
IF(AV)
average forward current
Ttp = 45 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
−
0.8
A
A
T
amb = 80 °C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave
−
−
50
20
ERSM
non-repetitive peak reverse avalanche L = 120 mH; Tj = Tj max prior to
mJ
energy
surge; inductive load switched off
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
see Fig.5
1996 Jun 19
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IF = 1 A; Tj = Tj max; see Fig.6
IF = 1 A; see Fig.6
MIN.
TYP.
MAX.
0.8
UNIT
VF
forward voltage
−
−
−
−
V
1.0
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
1N5059
1N5060
225
450
650
900
−
−
−
−
−
−
−
3
−
−
V
V
1N5061
−
V
1N5062
−
V
IR
reverse current
1
µA
µA
VR = VRRMmax; see Fig.7
−
150
−
VR = VRRMmax; Tj = 165 °C; see Fig.7
trr
reverse recovery time
diode capacitance
−
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.10
µs
Cd
−
50
−
VR = 0 V; f = 1 MHz; see Fig.8
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
K/W
100
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of Handbook SC01”.
1996 Jun 19
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
GRAPHICAL DATA
MBG044
MBG054
3
1.6
handbook, halfpage
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
(A)
1.2
2
0.8
0.4
1
0
0
0
0
40
80
120
160
T
200
(°C)
40
80
120
160
T
200
(°C)
tp
amb
a = 1.57; VR = VRRMmax; δ = 0.5.
a = 1.57; VR = VRRMmax; δ = 0.5.
Lead length 10 mm.
Device mounted as shown in Fig.9.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC745
MBH388
4
200
handbook, halfpage
handbook, halfpage
P
(W)
T
j
(°C)
3
1.42
1.57
2
2.5
2
1
0
100
a = 3
59
60
61
62
0
0
1
2
3
0
400
800
1200
V
(V)
R
I
(A)
F(AV)
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jun 19
4
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
MGC735
MGC734
3
15
10
handbook, halfpage
handbook, halfpage
I
I
R
F
(A)
(µA)
2
10
10
max
10
1
5
−1
0
0
10
1
2
0
40
80
120
160
T ( C)
200
V
(V)
o
F
j
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
VR = VRRMmax
.
Fig.6 Forward current as a function of forward
voltage; maximum values.
Fig.7 Reverse current as a function of junction
temperature; maximum values.
MBG031
2
10
handbook, halfpage
50
handbook, halfpage
25
C
d
(pF)
7
50
10
2
3
1
2
1
10
10
V
(V)
R
MGA200
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 Jun 19
5
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 Jun 19
6
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
PACKAGE OUTLINE
k
a
0.81
max
3.81
max
4.57
max
MBC880
28 min
28 min
Dimensions in mm.
Fig.11 SOD57.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 19
7
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